JPH011205A - current limiting resistor element - Google Patents

Abstract

(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

[Detailed Description of the Invention] Industrial and Vertical The present invention has a configuration in which two or more resistive elements are thermally coupled, heat generated by one resistive element is transmitted to the other resistive element,
The present invention relates to a current limiting resistance element whose resistance value increases.

The above-mentioned current-limiting resistance element is composed of, for example, a positive temperature coefficient thermistor as an individual resistance element. Shown schematically in Figure. This current limiting resistance element 21 is composed of positive temperature coefficient thermistors 22, 23, and 24 as individual resistance elements, and these three positive coefficient thermistors 22, 23, 2
4 are overlapped so as to be thermally independent but thermally bonded, and bonded together with an adhesive or the like.

-H<'r''l, within the region of ``'' By the way, the current-limiting resistor element 21 connects the main circuit between terminals a and b of the positive temperature coefficient thermistor 22, and the other positive coefficient thermistor 23 and 24. Other related circuits are connected between the terminals c and d and the terminals e and f. When an overcurrent flows between the terminals a and b, the PTC thermistor 22 generates heat and its resistance value increases, and this heat is transmitted to the other PTC thermistors 23 and 24, causing the PTC thermistors themselves to The temperature also rises. Therefore, the positive temperature coefficient thermistor 2
The resistance value of 3.24 also increases and the terminal c-(1 and terminal e-
Limit the current flowing between f. Therefore, it is possible to protect the main circuit and at the same time prevent abnormal current from flowing into other related circuits connected to these positive temperature coefficient thermistors 23 and 24.

However, the current limiting resistor element 21 is formed by overlapping three individually manufactured positive temperature coefficient thermistors 22, 23, and 24 and bonding them together using an adhesive or the like. The current limiting resistance element 21 formed by
The resistance value cannot be made smaller than the resistance value of each positive temperature coefficient thermistor 22, 23, 24, and there is a limit to making the thickness of each positive coefficient thermistor thinner, which poses a problem in reducing the resistance.

Further, the current limiting resistor element 21 is composed of three parts manufactured independently.
Since it is composed of positive temperature coefficient thermistors 22, 23, and 24, the overall thickness cannot be made thinner, and since they are bonded together with adhesive, the thermal conductivity becomes poor, resulting in thermal response. It also has the problem of being inferior in quality.

SUMMARY OF THE INVENTION In view of the above-mentioned problems, it is an object of the present invention to provide a current-limiting resistor element that can achieve low resistance and has excellent thermal responsiveness.

In order to achieve the above-mentioned object to improve the popularity of H-Month, the present invention provides a method for connecting one resistive element having a positive resistance-temperature characteristic to one or more resistive elements having a positive resistance-temperature characteristic. In the current limiting resistance element in which the resistance elements are thermally coupled, the resistance element is formed of a plurality of semiconductor elements configured in a thin plate shape, a predetermined internal electrode is provided on the surface of the semiconductor element, and all the semiconductor elements are It is characterized by a structure in which four-body elements are stacked.

According to the above structure, it is possible to integrally form a plurality of resistive elements by laminating the required number of thin plate-shaped semiconductor elements having internal electrodes formed in a predetermined electrode pattern. Therefore, it is possible to form a thin semiconductor element, which contributes to lower resistance.

Further, since the semiconductor elements constituting the resistance element are formed into thin plate shapes and are stacked, heat conduction between the semiconductor elements is improved, and thermal responsiveness between each resistance element is improved.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS As an embodiment of the present invention, a current-limiting resistance element consisting of one resistance element connected to a main circuit and two resistance elements connected to other related circuits will be described below. FIG. 1 is a perspective view of the current limiting resistor element according to the present invention, FIG. 2 is a sectional view taken along the E-I line in FIG. 1, and FIG. 3 is a sectional view taken along the Ro-Ro line in FIG. In the figure, reference numeral 1 denotes a current-limiting resistor main body formed integrally by stacking ten thin plate-shaped semiconductor elements having positive resistance-temperature characteristics; A pair of external electrodes connected to the main circuit are provided, and 3 are a pair of external electrodes each connected to other related circuits whose current amount is limited when an overcurrent flows through the main circuit. .

As shown in the exploded perspective views of the current limiting resistor main body 1 in FIGS. 2, 3, and 4, the current limiting resistor main body 1 has a positive resistance temperature characteristic and is formed in a thin plate shape. and internal electrodes 6a to 61 configured with a predetermined electrode pattern on the surfaces of the semiconductor elements 5b to 51 excluding the semiconductor elements 5a and 5j at both ends,
All of the semiconductor elements 5a to 5j are laminated, bonded under pressure, and then fired.

Among the internal electrodes 6a to 61, 4.
5th, 8th and 9th semiconductor elements 5d.

e and 5h, internal electrode 6e provided on i surface.

r and 6, 7! are formed so as to be exposed alternately at the longitudinal ends of the semiconductor element 5, and the remaining semiconductor elements 5b, c
The internal electrodes 6a, b, c, d and 6g, h, i, j formed in the electrodes 5f and 5g are divided at the center and are formed so as to be exposed alternately at the ends in the width direction of the semiconductor element 5. has been done. The exposed ends of each of the internal electrodes 6e and 61 are electrically connected to one side 2a of the external electrode 2, and the exposed ends of each of the internal electrodes 6f and 6 are connected to the other 2b of the external electrode 2. The two resistance elements are electrically connected in parallel. Further, the exposed ends of the internal electrodes 6a and 61 are connected to the external electrode 3a, the exposed ends of the internal electrodes 6c and 6g are connected to the external electrode 3b, and the exposed ends of the internal electrodes 6b and 6j are connected to the external electrode 3C, Internal electrode 6
The exposed ends of d and 6h are electrically connected to the external type tM3d, respectively. Therefore, although six resistance elements are formed in the current-limiting resistance element body 1, two of them are connected in parallel, which contributes to lower resistance.

The above semiconductor devices 5a to 5j are manufactured using barium titanate, a trace amount of Y2O3 as a semiconforming agent, SiO□, At□03 as a mineralizing agent, and MnO2 as a property improving agent.
A green sheet is formed into a thin film by adding a binder to the green sheet, which is then cut to a predetermined size, printed with an internal electrode pattern (described later), and then fired. It is something that will be done.

On the other hand, the internal electrodes 6a to 6N are formed by using a paste prepared by mixing barium titanate sintered powder with carbon and face whose porosity is controlled to a predetermined value after firing, on the surface of the green sheet. The predetermined electrode pattern described above is printed to a thickness of 1 to 20 pm, and then fired. In this firing, all 10 green sheets including the green sheet on which the electrode pattern is printed are laminated at once, pressed together, and then fired at 1300°C to form the current limiting resistor main body 1. Manufactured.

When this firing is completed, the carbon in the paste printed as an electrode pattern is burned off, and the paste is formed as a porous layer. For this purpose, the porous layer is degassed in a vacuum, and then
A metal solution with a low melting point that allows ohmic contact to be obtained, in this example, a metal consisting of 90 mol % Pb and S n lo mol χ is immersed in a metal solution melted at 350 ° C.
Internal electrodes 6a to 6g are provided by injecting the metal solution into the porous layer under pressure. Note that the manufacturing of the internal electrodes 6 is not limited to injection, but other methods may be used as long as ohmic contact can be obtained.

As the metal that can provide the ohmic contact, lead, tin, alloys thereof, or other low melting point metals are used.

As mentioned above, the current limiting resistor element of this example is formed by laminating and press-bonding 10 thin plate-shaped semiconductor elements together, so that the heat generated in one resistor element is transferred to other adjacent resistor elements. Because it moves quickly to the resistive elements, it is efficiently conducted between the resistive elements, and the heat generated when overcurrent flows in the main circuit is quickly and directly transmitted to the resistive elements connected to the related circuits.
Their resistance values can be increased to provide current limiting for the associated circuitry.

In addition, since the current limiting resistor body has a structure in which semiconductor elements are stacked in multiple layers, it is possible to reduce the resistance of each semiconductor element, and it is also possible to connect two resistive elements with the same characteristics in parallel. Therefore, a configuration in which the resistance value is reduced to one half can be easily adopted, and this has a remarkable effect in reducing the resistance of the current limiting resistor element.

FIG. 5 is an exploded perspective view of only the main body of a current limiting resistor element as another embodiment of the present invention.

In the current limiting resistance element of this example, the characteristics of some of the semiconductor elements are changed, and the temperature characteristics and specific resistance of the current limiting resistance element are changed. That is, the second and sixth semiconductor elements 11b and 11r from the top in FIG. 5 are manufactured using a different material from the other semiconductor elements 11a, ce, and IIg-j, and have different temperature characteristics. , the resistivity is changed. Note that the internal electrodes 6a to 61 and the external electrode 2.3 are as follows:
It is formed in the same manner as the previous embodiment, and corresponding parts are given the same reference numerals and explanations will be omitted.

The current limiting resistor element of this embodiment can easily respond to changes in thermal conductivity and changes in the resistance value of the resistor element.

Note that in the above two embodiments, three resistance elements are used as examples of the current-limiting resistance elements.
Two items or four or more items can be configured in the same way. Even if the number of resistance elements changes in this way, the main body of the current-limiting resistance element is formed by stacking semiconductor elements having positive resistance-temperature characteristics, and a predetermined internal electrode is formed on the surface of a predetermined semiconductor element. They can be manufactured by providing the entire structure and bonding them together under pressure. Therefore, even if a plurality of resistance elements are stacked, a current-limiting 4° resistance element with low resistance and excellent thermal response can be provided.

Furthermore, it goes without saying that the resistance value of each resistance element can be arbitrarily set by changing the thickness of the semiconductor element and the area of the electric bridge.

As described above, in the current limiting resistance element of the present invention, each resistance element is formed of a plurality of semiconductor elements configured in a three-plate shape, and a predetermined internal electrode is provided on the surface of the semiconductor element. In addition, since all the resistance elements are laminated, the resistance can be lowered compared to the case where individual positive temperature coefficient thermistors or the like are manufactured and bonded together.

Furthermore, since the semiconductor element constituting the resistance element is formed into a thin plate shape and is formed by stacking a plurality of semiconductor elements,
A single semiconductor element can be manufactured on the μm order, and the current limiting resistor as a whole can also be manufactured in a small size and light weight. moreover,
Since the semiconductor element can be made thinner, the thermal response becomes better, and an excellent current limiting resistor element can be provided.

[Brief explanation of the drawing]

FIG. 1 is a perspective view of a current limiting resistance element as an embodiment of the present invention, FIG. 2 is a cross-sectional front view of the E-I wire in FIG. 1, and FIG. 3 is a cross-sectional side view of the Ro-Ro wire in FIG. FIG. 4 is an exploded perspective view of the main body of a current limiting resistor element, FIG. 5 is an exploded perspective view of only the main body of a current limiting resistor element as another embodiment of the present invention, and FIG. 6 is a conventional current limiting resistor element. FIG. 1... Current-limiting resistance element body, 2, 3... External electrode, 5
a~5L11a~Hj...Semiconductor element, 68~61.
・Internal electrode. Patent Applicant 2 Material Manufacturing Co., Ltd. Figure 1 Figure 2 Figure 3 b Figure 4 Figure 5

Claims (1)

[Claims] (1) In a current-limiting resistance element in which one or more resistance elements having positive resistance-temperature characteristics are thermally coupled to one resistance element having positive resistance-temperature characteristics, the resistance element is , formed of a plurality of semiconductor elements configured in a thin plate shape,
A current-limiting resistance element, characterized in that a predetermined internal electrode is provided on the surface of the semiconductor element, and all the resistance elements are stacked.