JPH01129964A - Target for sputtering - Google Patents
Target for sputteringInfo
- Publication number
- JPH01129964A JPH01129964A JP28864687A JP28864687A JPH01129964A JP H01129964 A JPH01129964 A JP H01129964A JP 28864687 A JP28864687 A JP 28864687A JP 28864687 A JP28864687 A JP 28864687A JP H01129964 A JPH01129964 A JP H01129964A
- Authority
- JP
- Japan
- Prior art keywords
- target
- rare earth
- ingot
- sputtering
- phase
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004544 sputter deposition Methods 0.000 title claims description 9
- 239000000203 mixture Substances 0.000 claims description 32
- 229910045601 alloy Inorganic materials 0.000 claims description 26
- 239000000956 alloy Substances 0.000 claims description 26
- 229910052761 rare earth metal Inorganic materials 0.000 claims description 26
- 229910052723 transition metal Inorganic materials 0.000 claims description 24
- -1 rare earth transition metal Chemical class 0.000 claims description 15
- 229910000905 alloy phase Inorganic materials 0.000 claims description 12
- 150000002910 rare earth metals Chemical class 0.000 claims description 11
- 238000005477 sputtering target Methods 0.000 claims description 11
- 150000003624 transition metals Chemical class 0.000 claims description 9
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 229910052684 Cerium Inorganic materials 0.000 claims description 2
- 229910052779 Neodymium Inorganic materials 0.000 claims description 2
- 229910052777 Praseodymium Inorganic materials 0.000 claims description 2
- 229910052742 iron Inorganic materials 0.000 claims description 2
- 229910052692 Dysprosium Inorganic materials 0.000 claims 1
- 229910052688 Gadolinium Inorganic materials 0.000 claims 1
- 229910052771 Terbium Inorganic materials 0.000 claims 1
- 229910052718 tin Inorganic materials 0.000 claims 1
- 230000005291 magnetic effect Effects 0.000 description 22
- 238000000034 method Methods 0.000 description 19
- 239000010408 film Substances 0.000 description 18
- 239000000843 powder Substances 0.000 description 18
- 238000009826 distribution Methods 0.000 description 17
- 238000002844 melting Methods 0.000 description 15
- 239000000758 substrate Substances 0.000 description 15
- 230000035699 permeability Effects 0.000 description 9
- 238000010586 diagram Methods 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 8
- 230000008018 melting Effects 0.000 description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 7
- 229910052760 oxygen Inorganic materials 0.000 description 7
- 239000001301 oxygen Substances 0.000 description 7
- 239000002994 raw material Substances 0.000 description 7
- 239000002245 particle Substances 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 239000002131 composite material Substances 0.000 description 5
- 238000005266 casting Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000005245 sintering Methods 0.000 description 4
- 238000001755 magnetron sputter deposition Methods 0.000 description 3
- 239000010410 layer Substances 0.000 description 2
- 229910052772 Samarium Inorganic materials 0.000 description 1
- 238000011888 autopsy Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
−〔産業上の利用分野〕
本発明は希土類遷移金属合金スパッタリング用ターゲッ
トの組織及び組成に関する。DETAILED DESCRIPTION OF THE INVENTION - [Industrial Application Field] The present invention relates to the structure and composition of a rare earth transition metal alloy sputtering target.
希土類遷移金属系光磁気記録膜を作成するスパッタリン
グ用ターゲットは従来より鋳造法、焼結法、半溶融法な
どがある。ここでいう鋳造法とは鋳込んだ鋳塊をそのま
ま外径・表面加工にてターゲットにするものであり、焼
結法とは一度鋳込んだ鋳塊を粉砕し、焼結にてターゲッ
ト形状とするものである。又、半溶融法とは特開昭６１
−９９６４０号に示すものである。Conventional sputtering targets for producing rare earth transition metal-based magneto-optical recording films include casting methods, sintering methods, and semi-melting methods. The casting method referred to here is a method in which the cast ingot is used as a target by external diameter and surface processing, and the sintering method is a method in which the cast ingot is crushed and sintered to create a target shape. It is something to do. In addition, the semi-melting method is described in Japanese Patent Application Laid-open No. 1983.
-99640.
しかしながら前述の焼結法は、本質的に酸素量を多（含
み（２０００ｐｐｍ程度）、酸化され易い希土類遷移金
属系には適していない。一方、鋳造法はＴｂＦｅ系に関
しては非常に脆く、新しい組成系としてＮｄＤｙＦｅＣ
ｏ系が注目されている。（特開昭６１−１６８２２号、
６２−１２９４１号等）
〔発明が解決しようとする問題点〕
しかしながら、前述の従来技術による鋳造法によるＮｄ
ＤｙＦｅＣｏ５ＮｄＴｂＦｅＣｏ、ＰｒＤｙＦｅＣｏ５
ＰｒＴｂＦｅＣｏ系鋳造合金ターゲットでスパッタリン
グにて成膜した場合、基板面内で組成分布が生じるとい
う問題点を有する。However, the above-mentioned sintering method is not suitable for rare earth transition metal systems that inherently contain a large amount of oxygen (approximately 2000 ppm) and are easily oxidized.On the other hand, the casting method is extremely brittle for TbFe systems, and new compositions NdDyFeC as a system
o series is attracting attention. (Unexamined Japanese Patent Publication No. 16822/1983,
62-12941, etc.) [Problems to be solved by the invention] However, the Nd
DyFeCo5NdTbFeCo, PrDyFeCo5
When a film is formed by sputtering using a PrTbFeCo-based casting alloy target, there is a problem in that a composition distribution occurs within the plane of the substrate.
（ＩＳＭＯｏ ８７ ２１Ｂ−１４）
又、半溶融法で作成したターゲットは基板面内で組成分
布が生じにくいという特長がある。（第１０回日本応用
磁気学会学術講演概要集５ａＢ−７，５ａＢ−８）
しかし、半溶融法は基本的には焼結による製造であるた
め、ターゲットは完全な密状態となっておらず、大気中
に放置された場合はターゲットの表面層が酸化されてし
まい、予備スパッタリングでは表面層をクリーニングで
きないほどの酸化層となってしまう。又、半溶融法は遷
移金属単体相を含むため、ターゲットの透磁率が大きく
、マグネトロンスパッタ時には、ターゲットを薄くしな
いと十分な漏洩磁場が出ないという欠点がある。(ISMOo 87 21B-14) Further, a target created by a semi-melting method has the advantage that composition distribution is less likely to occur within the plane of the substrate. (The 10th Japanese Society of Applied Magnetics Academic Lecture Abstracts 5aB-7, 5aB-8) However, since the semi-melting method is basically manufactured by sintering, the target is not completely dense. If the target is left in the atmosphere, the surface layer of the target will be oxidized, and the oxidized layer will become so thick that it cannot be cleaned by preliminary sputtering. In addition, since the semi-molten method contains a single transition metal phase, the magnetic permeability of the target is high, and there is a drawback that a sufficient leakage magnetic field cannot be generated unless the target is made thin during magnetron sputtering.
そこで本発明はこのような問題点を解決するもので、そ
の目的とするところは従来の鋳造合金ターゲットがもつ
成膜面内で組成分布が生じるという欠点を克服し、さら
に半溶融法によるターゲットのもつ酸化されやすい、透
磁率が大きいという欠点を克服するターゲットを提供す
るところにある。The present invention is intended to solve these problems, and its purpose is to overcome the drawback of the conventional cast alloy target that compositional distribution occurs within the film formation surface, and furthermore, to solve the problem of forming a target using a semi-melting method. The objective is to provide a target that overcomes the disadvantages of being easily oxidized and having high magnetic permeability.
希土類遷移金属合金からなる光磁気記録層をスパッタリ
ングにて製造する鋳造合金ターゲットにおいて、鋳造合
金ターゲット中の金属組織が、希土類金属単体相と希土
類遷移金属合金相からなることを特徴とする。A cast alloy target for producing a magneto-optical recording layer made of a rare earth transition metal alloy by sputtering is characterized in that the metal structure in the cast alloy target consists of a rare earth metal elemental phase and a rare earth transition metal alloy phase.
従来より実験室で用いられているＴＭツタ−ゲット上Ｒ
Ｅチップを配して成膜する複合ターゲット方式の場合、
基板面内の組成分布は鋳造合金ターゲットのそれとは逆
の傾を示す。TM target top R used conventionally in laboratories
In the case of a composite target method that uses E-chips to form a film,
The in-plane composition distribution of the substrate exhibits a slope opposite to that of the cast alloy target.
つまり、複合ターゲットの場合はターゲットの直上にな
るほどＲＥが多く側面はどＴＭが多い。In other words, in the case of a composite target, there are more REs and more TMs on the sides as the position directly above the target increases.
一方、鋳造合金ターゲットのそれはターゲットの直上に
なるほどＴＭが多く、側面はどＲＥが多い。On the other hand, in the case of a cast alloy target, there are more TMs directly above the target, and there are more REs on the sides.
これらをより詳細に見てみると、ＴＭの飛び方は複合タ
ーゲット、鋳造合金ともほぼ同じで大きな差はなかった
。一方、ＲＥの飛び方が複合ターゲットと鋳造合金とで
大きな差があることがわかった。つまり、複合ターゲッ
トのときのＲＥはターゲットの上方向に飛び易く、鋳造
合金ターゲットのときのＲＥはターゲットの横方向に飛
び易いのである。つまりＲＥ単体相と、ＲＥ−７Ｍ合金
相を適当に混存させた鋳造合金ターゲットができれば、
基板面内で組成分布が少ない均一な成膜が可能となり、
又ＴＭ単体相がないため透磁率も小さくなりターゲット
を厚くしても十分マグネトロンスパッタが可能となる。Looking at these in more detail, the flight of TM was almost the same for both composite targets and cast alloys, with no major difference. On the other hand, it was found that there is a large difference in the way RE flies between the composite target and the cast alloy. In other words, RE in the case of a composite target tends to fly upwards of the target, and RE in the case of a cast alloy target tends to fly in the lateral direction of the target. In other words, if a cast alloy target with an appropriate mixture of RE single phase and RE-7M alloy phase is created,
Enables uniform film formation with little compositional distribution within the substrate plane.
Furthermore, since there is no single TM phase, the magnetic permeability is also low, and magnetron sputtering is possible even if the target is thick.
さらに鋳造合金であるための本来の酸素含有量も少なく
、予備スパッタリングも非常に短くなる。Furthermore, since it is a cast alloy, the original oxygen content is low, and the preliminary sputtering period is extremely short.
〔実施例１〕
まず原料として、（Ｎｄｏ、ｚ Ｄ’ｉｏ、＋ ） ｑ
ｚ、ｚ（Ｆ ｅｏ、ｎ Ｃ０６，２） Ｚ７．８ａｔ％
の鋳塊を作る（以下この鋳塊をＲ＋ ＲＩＴ ２鋳塊と
呼ぶ）。この鋳塊の融点は８３０°Ｃ程度と極めて低い
。そして次に（Ｎｄｏ、ｚ Ｄ Ｖｏ、ｓ ） ｔｏ、
ｓ （Ｆ ｅｏ、ａ Ｃ００，２）ｅｑ、ｓａｔ％の鋳
塊を作り、平均粒径が２００μｍ程度となる様にこの鋳
塊を粉砕し粉末とする（以下この粉末をＲｚＴｙｔ粉末
と呼ぶ）。このＲｚＴ＋を粉末の融点は１３３０°Ｃで
ある。[Example 1] First, as raw materials, (Ndo, z D'io, +) q
z, z (F eo, n C06,2) Z7.8at%
(Hereinafter, this ingot will be referred to as R+ RIT 2 ingot). The melting point of this ingot is extremely low, about 830°C. And then (Ndo, z D Vo, s ) to,
An ingot of s (F eo, a C00, 2) eq, sat% is made, and this ingot is ground into powder so that the average particle size is about 200 μm (hereinafter, this powder is referred to as RzTyt powder). The melting point of this RzT+ powder is 1330°C.
これら原料、つまりＲ十Ｒｒ Ｔ ｚ鋳塊とＲｚ Ｔ
１７粉末を（Ｒ＋Ｒ＋ Ｔｔ ） ： （Ｒｚ Ｔｉｔ
） ＝ １７ ：４４．７の比になる様にルツボ中に投
入する。その後ルツボを１０５０°Ｃまで温度を上げる
。つまりこの１０５０°Ｃの状態のときはＲ＋ＲＩ Ｔ
Ｚ鋳塊が溶解されておりＲｚＴ＋、粉末“は溶解しな、
いまま粒末が溶湯中に混合されている状態となる。そし
て、この状態のまま鋳型に鋳込み、出来上がった鋳造合
金を加工し、４“φＸ６ｔのスパッタリングターゲット
を作成した。このターゲットの組成はＮｄｓ、ｓ Ｄｙ
ｚｇ−Ｆ ｅｓｅ、ｏｃＯ＋４．５ａｔ％となっている
。このターゲットの表面組織の模式図を第１図に示す。These raw materials, that is, Rr Rr T z ingot and Rz T
17 powder (R+R+ Tt): (Rz Tit
) = 17:44.7. Thereafter, the temperature of the crucible is raised to 1050°C. In other words, in this 1050°C state, R+RI T
The Z ingot is melted and the RzT+ powder is not melted.
The particles are now mixed in the molten metal. Then, in this state, it was poured into a mold, and the finished cast alloy was processed to create a sputtering target of 4"φ x 6t. The composition of this target was Nds, s Dy.
zg-Fese, ocO+4.5at%. A schematic diagram of the surface structure of this target is shown in FIG.
１の相はＮｄ＋ Ｄｙａの希土類（Ｒ）単独相であり、
２の相は（Ｎｄ０．□Ｄｙｏ、ａ）＋（Ｆ ｅｏ、ｓ
Ｃ００，２）ｚの希土類遷移金属合金相（Ｒ。Phase 1 is a rare earth (R) single phase of Nd+Dya,
The phase of 2 is (Nd0.□Dyo, a) + (F eo, s
C00,2)z rare earth transition metal alloy phase (R.
Ｔ２）である。又、３の相は（Ｎｄｏ、ｚ Ｄｙｏ、ａ
）ｚ（Ｆ ｅｏ、Ｂ ＣＯｏ、ｚ Ｌ７の希土類遷移金
属合金相（Ｒｚ’ｒ’＋ｔ）である。つまり大きくわけ
て希土類単独相と希土類遷移金属合金相の２相になって
いるのである。T2). Also, the phase 3 is (Ndo, z Dyo, a
) z (F eo, B COo, z L7 rare earth transition metal alloy phase (Rz'r'+t). In other words, it is roughly divided into two phases: a rare earth single phase and a rare earth transition metal alloy phase.
このＮｄＤｙＦｅＣｏターゲットを第２図に示す様なス
パッタリング装置に装着し、成膜しその磁気特性及び組
成分布を調べてみた。第２図の２１が、スパッタリング
ターゲットであり、２２が基板ホルダー（３００φ）で
ある。成膜条件はＡｒ圧２．５ｍＴｏｒｒ 、初期真空
度３ Ｘ １０−’Ｔ、、、 。This NdDyFeCo target was installed in a sputtering apparatus as shown in FIG. 2, and a film was formed to examine its magnetic properties and composition distribution. 21 in FIG. 2 is a sputtering target, and 22 is a substrate holder (300φ). The film forming conditions were an Ar pressure of 2.5 mTorr and an initial vacuum level of 3 x 10-'T.
投入電力はＤＣ電源を用い１．ＯＡ３４０ Ｖでおこな
った。第３図に本発明ターゲットを用いた基板ホルダー
内組成分布及び磁気特性分布図である。1. Use a DC power supply for input power. It was performed with OA340V. FIG. 3 is a diagram showing the composition distribution and magnetic property distribution in the substrate holder using the target of the present invention.
この図に示す様に組成はＲＥが２８．０〜２８゜５ａｔ
％で均一であり、磁気特性もＨｃが９．７〜１０．５Ｋ
Ｏｅで均一である。基板ホルダー内にほとんどといっ
て良いほど均一な膜が成膜できている。当然このターゲ
ットは鋳造合金であるので酸素量は少なく３５０ｐｐｍ
であった。As shown in this figure, the composition has an RE of 28.0 to 28°5at.
%, and the magnetic properties are Hc of 9.7 to 10.5K.
It is uniform at Oe. A nearly uniform film was formed inside the substrate holder. Naturally, since this target is a cast alloy, the amount of oxygen is low at 350 ppm.
Met.
一方、比較のために従来の製造方法でＮｄＤｙＦｅＣｏ
ターゲットを作成した。すわわちＮｄＤｙＦｅｃ、ｏ全
組成を１５００°Ｃでルツボ中にて溶解し、そして鋳型
に注湯し鋳塊を作った。そしてこの鋳塊を切断、研磨し
４“φ×６むのＮｄＤｙＦｅＣｏターゲットを作成した
。このターゲットの表面組織の模式図が第４図である。On the other hand, for comparison, NdDyFeCo was manufactured using the conventional manufacturing method.
Created a target. That is, the entire composition of NdDyFec and o was melted in a crucible at 1500°C, and poured into a mold to form an ingot. This ingot was then cut and polished to create a 4"φ x 6mm NdDyFeCo target. FIG. 4 is a schematic diagram of the surface structure of this target.
４１は（Ｎｄｏ、＋ｚＤｙｏ、５ｓ）ｚｓ （Ｆｅｏ、
ａ Ｃ。41 is (Ndo, +zDyo, 5s)zs (Feo,
aC.
ｏ、 ｚ） ｑ５ａｔ％組成相で４２は（Ｎｄｏ、３Ｄ
ｙｏ、ｔ ）３１−３ （Ｆ ｅ Ｏｎ Ｂ ＣＯＯ−
２）６６．７ａｔ％組成相である。o, z) q5at% composition phase and 42 is (Ndo, 3D
yo,t)31-3 (F e On B COO-
2) It is a 66.7 at% composition phase.
つまり、両相ともＮｄＤｙＦｅＣｏ合金相であった。全
体ではＮｄｂ、ｓ Ｄ ｙｚ＋、ｓＦ ｅｓｓｃ ｏｌ
ａの組成であった。このターゲットを第２図に示す装置
で成膜をおこなった。成膜条件は先述の本発明ターゲッ
トの場合と同じである。第５図にこの従来の製造方法に
よる鋳造合金ＮｄＤｙＦｅＣｏターゲットを用いた基板
ホルダー内組成分布及び磁気特性分布図を示す。この図
に示す様に組成はＲＥが２９．８〜２６．８ａｔ％で、
基板ホルダー中心へいくほどＲＥが多く、逆にホルダー
外周へいくほどＲＥ −が少なくなっている。又、磁
気特性もＨｃが１２〜５ＫＯｅとホルダー中心へいくほ
どＨｃが大きくなっている。これは組成分布とも一致す
る。つまり従来の製造方法による鋳造合金ＮｄＤｙＦｅ
Ｃ０ターゲットはターゲットの上方向はどＴＭ（遷移金
属）がとびやすく、横方向はどＲＥがとびやすい特性を
示し、基板ホルダー内で組成分布を生じさせてしまう。In other words, both phases were NdDyFeCo alloy phases. Overall, Ndb, sD yz+, sF essc ol
It had the composition of a. Film formation was performed using this target using the apparatus shown in FIG. The film forming conditions are the same as those for the target of the present invention described above. FIG. 5 shows the composition distribution and magnetic property distribution in the substrate holder using a cast alloy NdDyFeCo target produced by this conventional manufacturing method. As shown in this figure, the composition is 29.8 to 26.8 at% RE,
RE increases toward the center of the substrate holder, and conversely, RE − decreases toward the outer periphery of the holder. In addition, the magnetic properties have an Hc of 12 to 5 KOe, which increases as you move toward the center of the holder. This also agrees with the composition distribution. In other words, cast alloy NdDyFe by conventional manufacturing method.
The C0 target exhibits characteristics in which TM (transition metal) tends to jump in the upper direction of the target and RE tends to jump in the lateral direction, resulting in a compositional distribution within the substrate holder.
さらに半溶融法により製造したターゲットと比較するた
め、先述の本発明ターゲット組成と同様のＮｄｓ、ｓ
Ｄ）’ｚｚＦ ｅｓｅ、ｏｃＯ＋４．ｓａｔ％の組成で
半溶融法を用い４“φＸ６ｔのターゲットを作成した。Furthermore, in order to compare with the target manufactured by the semi-melting method, Nds, s
D) 'zzF ese, ocO+4. A target of 4"φ×6t was prepared using a semi-melting method with a composition of sat%.
そして、これら本発明品と半溶融品のターゲットの透磁
率を測定した所、本発明品が３であったのに対し、半溶
融品は５５と大きな値であった。そして、半溶融品を先
述のスパッタ装置に装着し、放電を試みたが、放、電し
なかった。そこでターゲット厚みを薄くしていったとこ
ろ、３．３ｍｍｔでやっと放電する様になった。つまり
半溶融品は透磁率が大きく、マグネトロン放電させるた
めにはターゲットを薄くする必要がある。このことは、
１枚のターゲットから製造できる薄膜が少ないというこ
とであり、製品のコスト面で非常に悪いということを意
味する。当然本発明品は６ ｍｍ ｔでも十分な漏洩磁
場が出ており、製品コストの点でも非常にメリットがあ
る。ここで示した方法以外にＲＺＴＩ７粉末を作成せず
、Ｒ６Ｔ２ｆｆ粉末あるいはＲ，Ｔ３あるいはＲ，Ｔ、
粉末を用いても本発明は有効であることは確認した。When the magnetic permeability of the target of the present invention product and the semi-molten product was measured, it was found that the present invention product had a value of 3, while the semi-molten product had a large value of 55. Then, the semi-molten product was attached to the above-mentioned sputtering device and an attempt was made to discharge the material, but no discharge occurred. Therefore, when the target thickness was made thinner, discharge finally began to occur at 3.3 mm. In other words, a semi-molten product has a high magnetic permeability, and in order to generate a magnetron discharge, it is necessary to make the target thin. This means that
This means that only a small number of thin films can be manufactured from a single target, which means that the cost of the product is very poor. Naturally, the product of the present invention produces a sufficient leakage magnetic field even at 6 mm t, and is very advantageous in terms of product cost. Do not create RZTI7 powder using any method other than the one shown here, and use R6T2ff powder or R,T3 or R,T,
It was confirmed that the present invention is effective even when powder is used.
〔実施例２］
次にＰｒＴｂＦｅＣｏについて本発明法による効果を確
認した。製造方法は実施例１に示す本発明品と同じであ
り、まず原料として（Ｐｒｏ、ｚＴＥ）ｏ、ｓ）ｇｏ
（Ｆ ｅｏ、ａ Ｃｏｏ、ｚ）ｚｏａｔ％の鋳塊を作る
。[Example 2] Next, the effect of the method of the present invention on PrTbFeCo was confirmed. The manufacturing method is the same as the product of the present invention shown in Example 1, and first, (Pro, zTE) o, s) go
(F eo, a Coo, z) Create an ingot of zoat%.
この鋳塊の融点は８１０°Ｃ程度である。そして次に（
Ｐ ｒ ｏ、ｚ Ｔ １）ｏ、１）ｔｏ、ｓ（Ｆ ｅ
ｏ、ｓ ＣＯｏ、ｚ）ａｑ、ｓａｔ％の鋳塊を作り、平
均粒径が２００μｍ程度となる様にこの鋳塊を粉砕し粉
末とする。この粉末の融点は１２７５°Ｃである。The melting point of this ingot is about 810°C. And then (
P r o, z T 1) o, 1) to, s (F e
An ingot of o, s COo, z) aq, sat% is made, and the ingot is ground into powder so that the average particle size is about 200 μm. The melting point of this powder is 1275°C.
これら原料、つまり鋳塊と粉末を１３．６ ： ４２の
比になる様にルツボ中に投入する。その後ルツボを１０
５０℃まで温度を上げる。そして鋳型に鋳込み出来上が
った鋳造合金を加工し、４“φ×６ｔのスパッタリング
ターゲットを作成し実施例１と同様の成膜を試みた所、
基板ホルダー内に均一な組成、均一な磁気特性の膜が得
られた。このターゲットの酸素量は３８０ｐｐｍ、透磁
率は３．８であった。このターゲット組成はＰｒｓ、ｓ
Ｔｂ＊ｚ、。These raw materials, that is, the ingot and powder, are placed in a crucible at a ratio of 13.6:42. Then add 10 crucibles
Raise the temperature to 50°C. Then, the cast alloy that had been cast into a mold was processed, a 4"φ x 6t sputtering target was created, and film formation was attempted in the same manner as in Example 1.
A film with uniform composition and uniform magnetic properties was obtained within the substrate holder. This target had an oxygen content of 380 ppm and a magnetic permeability of 3.8. This target composition is Prs,s
Tb*z,.
Ｆ ｅ ｓｓ、 ｏ ＣＯ１４，ｓａｔ％である。又、
金属組織は、大きくわけて希土類単独相と希土類遷移金
属合金相の２相になっていた。Fe ss, o CO14, sat%. or,
The metal structure was roughly divided into two phases: a rare earth single phase and a rare earth transition metal alloy phase.
〔実施例３〕
次にＳｍＧｄＦｅＣｏについても同様のターゲットを作
成した。製造方法は実施例１に示す本発明品と同じであ
り、まず原料として（Ｓｍｏ、ｚＧｄｏ、ａ）ｙｚ、ｔ
（Ｆ ｅｏ、ｅ Ｃｏｏ、り！？、１ｌａｔ％の鋳塊
を作る。この鋳塊の融点は８０８ ’Ｃ程度である。そ
して次に（Ｓｍｏ、ｚ Ｇ ｄｏ、５）ｔｏ、ｓ （Ｆ
ｅａ、ｓ Ｃ。[Example 3] Next, a similar target was created using SmGdFeCo. The manufacturing method is the same as the product of the present invention shown in Example 1, and first, as raw materials (Smo, zGdo, a) yz, t
(F eo, e Coo, ri!?, make a 1lat% ingot. The melting point of this ingot is about 808'C. Then, (Smo, z G do, 5) to, s (F
ea,s C.
。０ｇ）ｓｑ、ｓａｔ％の鋳塊を作り、平均粒径が２０
０μｍ程度となる様にこの鋳塊を粉砕し粉末とする。. 0g) sq, sat% ingot was made, and the average particle size was 20
This ingot is ground into powder to a particle size of about 0 μm.
この粉末の融点は１３２５°Ｃである。The melting point of this powder is 1325°C.
これら原料、つまり鋳塊と粉末を１７ ： ４４．７の
比になる様にルツボ中に投入する。その後ルツボを１０
５０°Ｃまで温度を上げる。そして鋳型に鋳込み出来上
がった鋳造合金を加工し、４”φ×６ｔのスパッタリン
グターゲットを作成し実施例１と同様の成膜を試みた所
、基板ホルダー内に均一な組成、均一な磁気特性の膜が
得られた。このターゲット酸素量は３９０ｐｐｍ、透磁
率は４．０であった。また、このターゲットの組成はＳ
ｍｓ、ｓＧｄｇｚ、ｏＦ ｅｓｓ、ｏｃＯ＋４．５ａｔ
％である。又、金属組織は大きくわけて希土類単独相と
希土類遷移金属合金相の２相になっていた。These raw materials, that is, the ingot and the powder, are placed in a crucible at a ratio of 17:44.7. Then add 10 crucibles
Raise the temperature to 50°C. Then, we processed the cast alloy that had been cast into a mold, created a 4"φ x 6t sputtering target, and tried to form a film in the same manner as in Example 1. We found that a film with a uniform composition and uniform magnetic properties was formed inside the substrate holder. was obtained.The oxygen content of this target was 390 ppm, and the magnetic permeability was 4.0.The composition of this target was S.
ms, sGdgz, oF ess, ocO+4.5at
%. Furthermore, the metal structure was roughly divided into two phases: a rare earth single phase and a rare earth transition metal alloy phase.
〔実施例４〕
次にＮｄＳｍＤｙＴｂＦｅＣｏについても同様のターゲ
ットを作成した。製造方法は実施例１に示す本発明品と
同じであり、まず原料として（Ｎｄｏ、＋ Ｓｍｏ、＋
Ｄ ）’０．４ Ｔ ｂｏ、４）、ｚ、ｚ （Ｆ ｅ
ｏ、ａＣｏ ｏ、 ｇ） ！？＋ ｌｌａｔ％の鋳塊を
作る。この鋳塊の融点は８３０℃程度である。そして次
に（Ｎｄｏ、＋Ｓｍｏ、＋ Ｄ ）’ ｏ、ａ Ｔ ｂ
ｏ、ｎ）＋ｏ、ｓ （Ｆ ｅｏ、１１ ＣＯｏ、ｚ）ｓ
ｑ、５ａｔ％の鋳塊を作り、平均粒径が２００μｍ程度
となる様にこの鋳塊を粉砕し粉末とする。この粉末の融
点は１３２０°Ｃである。[Example 4] Next, a similar target was created using NdSmDyTbFeCo. The manufacturing method is the same as the product of the present invention shown in Example 1, and first, as raw materials (Ndo, + Smo, +
D)'0.4 T bo, 4), z, z (F e
o, aCo o, g)! ? + llat% ingot is made. The melting point of this ingot is about 830°C. And then (Ndo, +Smo, +D)' o, a T b
o, n) + o, s (F eo, 11 COo, z) s
q, 5 at% ingot is made, and this ingot is ground into powder so that the average particle size is about 200 μm. The melting point of this powder is 1320°C.
これら原料、つまり鋳塊と粉末を１７ ： ４４．７の
比になる様にルツボ中に投入する。その後ルツボを１０
５０″Ｃまで温度を上げる。そして鋳型に鋳込み出来上
がった鋳造合金を加工し、４＃φ×６ｔのスパッタリン
グターゲットを作成し実施例１と同様の成膜を試みた所
、基板ホルダー内に均一な組成、均一な磁気特性の膜が
得られた。このターゲットの酸素量は３７５ｐｐｍ、透
磁率は３．２であった。またこのターゲットの組成はＮ
ｄｚ、ｔｓＳ ｍｚ、、ｓＤ ｙ＋＋、ｏＴ ｂ ｚ、
ｏＦ ｅ ５１１．（Ｉｃ Ｏ＋ａ、ｓａｔ％であり、
金属組織は大きくわけて希土類単独相と希土類遷移金属
合金相の２相になっていた。These raw materials, that is, the ingot and the powder, are placed in a crucible at a ratio of 17:44.7. Then add 10 crucibles
The temperature was raised to 50"C.Then, the finished cast alloy was cast into a mold and processed to create a 4#φ x 6t sputtering target and the same film formation as in Example 1 was attempted. A film with a uniform composition and magnetic properties was obtained.The oxygen content of this target was 375 ppm, and the magnetic permeability was 3.2.The composition of this target was N.
dz, tsS mz,, sD y++, oT b z,
oF e 511. (Ic O+a, sat%,
The metal structure was roughly divided into two phases: a rare earth single phase and a rare earth transition metal alloy phase.
これら実施例１，２．３．４に示す組成系以外にＮｄＧ
ｄＦｅＣｏ、ＮｄＴｂＦｅＣｏ、ＮｄＰｒＤｙＦｅＣｏ
、ＮｄＰｒＤｙＴｂＦｅＣｏ、ＰｒＤｙＦｅＣｏ、Ｎｄ
ＳｍＧｄＦｅＣｏ、ＣｅＮｄ’ＤｙＦｅｃｏ、 ＣｅＮ
ｄＰｒＤｙＦｅＣｏ、等のＳｍ、Ｎｄ、’Ｐｒ、Ｃｅの
うち少なくとも１種以上の軽希土と、Ｆｅ、Ｃｏのうち
の少なくとも１種以上の遷移金属とを含む全ての組成系
について本発明効果が存在することを確認した。In addition to the composition systems shown in Examples 1, 2.3.4, NdG
dFeCo, NdTbFeCo, NdPrDyFeCo
, NdPrDyTbFeCo, PrDyFeCo, Nd
SmGdFeCo, CeNd'DyFeco, CeN
The effect of the present invention exists for all composition systems containing at least one kind of light rare earth among Sm, Nd, 'Pr, and Ce, such as dPrDyFeCo, and at least one kind of transition metal among Fe and Co. It was confirmed that
このように本発明を用いれば、ターゲット中の酸素量が
少ないという鋳造合金の特性を保ったまま、成膜面内で
組成分布が生じないという効果を有する。しかも、透磁
率が小さく、マグネトロンスパッタに適しており、ター
ゲット厚みも厚くすることができるため、作成した膜の
製品コストを減らすことができる。As described above, when the present invention is used, it is possible to maintain the characteristic of the cast alloy that the amount of oxygen in the target is small, while preventing composition distribution within the film forming surface. Moreover, it has low magnetic permeability and is suitable for magnetron sputtering, and the target thickness can be increased, so the product cost of the produced film can be reduced.
第１図は本発明ターゲットの表面組織の模式図。
第２図はスパッタリング装置の概略図。
第３図は本発明のターゲットを用いた基板ホルダー内組
成分布及び磁気特性分布図。
第４図は従来の製造方法による鋳造合金ターゲットの表
面組織の模式図。
第５図は従来の製造方法による鋳造合金ターゲットを用
いた基板ホルダー内組成分布及び磁気特性分布図。
１・・・Ｎｄ＋Ｄ）’４の希土類（Ｒ）単独相２…（Ｎ
ｄｏ、ｚ Ｄ ）’ｏ、ｓ）＋ （Ｆ ｅｏ、ｓ Ｃｏ
ｏ、ｚ）ｚの希土類遷移金属合金相（ＲＩ Ｔ！ ）３
・・・（Ｎｄｏ、ｇＩ））’ｏ、ｓ）ｚ （Ｆ ｅｏ、
ｓｃ Ｏｏｌｇ）＋。
の希土類遷移金属合金相（ＲｚＴ＋ｔ）２１・・・スパ
ッタリングターゲット
２２・・・基板ホルダー（３００φ）
４１ ”・（Ｎ ｄｏ、＋ｚＤ ）’ｏ、５ｓ）ｚｓ
（Ｆ ｅｏ、ａ ＣＯｏ、ｚＬ５ａｔ％組成相
４２・＝ （Ｎｄｏ、：＋ Ｄ ｙｏ、ｔ）３ｓ、ｔ
（Ｆ ｅｏ、ａ ＣＯｏ、ｚ）６６．７８ｔ％組成相
以上
出願人 セイコーエプソン株式会社
代理人弁理士 最上 務 他１名
第 １ 図
（Ｙ＝１剖Ｃ祷FIG. 1 is a schematic diagram of the surface structure of the target of the present invention. FIG. 2 is a schematic diagram of a sputtering device. FIG. 3 is a diagram of the composition distribution and magnetic property distribution in the substrate holder using the target of the present invention. FIG. 4 is a schematic diagram of the surface structure of a cast alloy target produced by a conventional manufacturing method. FIG. 5 is a diagram of the composition distribution and magnetic property distribution inside the substrate holder using a cast alloy target produced by the conventional manufacturing method. 1...Nd+D)'4 rare earth (R) single phase 2...(N
do, z D )'o, s) + (F eo, s Co
o, z) z rare earth transition metal alloy phase (RI T!) 3
...(Ndo,gI))'o,s)z (F eo,
sc Oolg)+. Rare earth transition metal alloy phase (RzT+t) 21... Sputtering target 22... Substrate holder (300φ) 41 ''・(N do, +zD )'o, 5s)zs
(F eo, a COo, zL5at% composition phase 42・= (Ndo, :+ D yo, t) 3s, t
(Feo, a COo, z) 66.78t% composition phase or higher Applicant Seiko Epson Corporation Representative Patent Attorney Tsutomu Mogami and 1 other person Figure 1 (Y=1 Autopsy C
Claims (2)
ッタリングにて製造するための鋳造合金ターゲットにお
いて、前記鋳造合金ターゲット中の金属組織が希土類金
属単体相と希土類遷移金属合金相からなることを特徴と
するスパッタリング用ターゲット。(1) A cast alloy target for producing a magneto-optical recording layer made of a rare earth transition metal alloy by sputtering, characterized in that the metal structure in the cast alloy target consists of a rare earth metal elemental phase and a rare earth transition metal alloy phase. sputtering target.
、Ｓｎ、Ｎｄ、Ｐｒ、Ｃｅのうち少なくとも１種以上の
軽希土類金属（ＬＲ）と、Ｇｄ、Ｔｂ、Ｄｙのうちの少
なくとも１種類以上の重希土類金属（ＨＲ）とを含み、
さらにＦｅ、Ｃｏのうち少なくとも１種以上の遷移金属
（ＴＭ）を含むことを特徴とする特許請求の範囲第１項
記載のスパッタリング用ターゲット。(2) The main composition of the sputtering target is at least one light rare earth metal (LR) among Sn, Nd, Pr, and Ce, and at least one heavy rare earth metal (LR) among Gd, Tb, and Dy. (HR),
The sputtering target according to claim 1, further comprising at least one transition metal (TM) among Fe and Co.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28864687A JPH01129964A (en) | 1987-11-16 | 1987-11-16 | Target for sputtering |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28864687A JPH01129964A (en) | 1987-11-16 | 1987-11-16 | Target for sputtering |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01129964A true JPH01129964A (en) | 1989-05-23 |
Family
ID=17732857
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP28864687A Pending JPH01129964A (en) | 1987-11-16 | 1987-11-16 | Target for sputtering |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01129964A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20010061660A (en) * | 1999-12-28 | 2001-07-07 | 이구택 | Camera case with anti-inflow of different thing |
-
1987
- 1987-11-16 JP JP28864687A patent/JPH01129964A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20010061660A (en) * | 1999-12-28 | 2001-07-07 | 이구택 | Camera case with anti-inflow of different thing |
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