JPH01149451A - Protective device for cmos input stage gate - Google Patents

Protective device for cmos input stage gate

Info

Publication number
JPH01149451A
JPH01149451A JP62308151A JP30815187A JPH01149451A JP H01149451 A JPH01149451 A JP H01149451A JP 62308151 A JP62308151 A JP 62308151A JP 30815187 A JP30815187 A JP 30815187A JP H01149451 A JPH01149451 A JP H01149451A
Authority
JP
Japan
Prior art keywords
resistor
protective resistor
corner
parts
stage gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62308151A
Other languages
Japanese (ja)
Inventor
Hiroaki Masumoto
桝本　浩明
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm Co Ltd
Original Assignee
Rohm Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Priority to JP62308151A priority Critical patent/JPH01149451A/en
Publication of JPH01149451A publication Critical patent/JPH01149451A/en
Pending legal-status Critical Current

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  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To enhance the heat dissipation effect of the heat generation of a protective resistor by a method wherein the areas of the corner parts of the protective resistor are formed widely and with the upper parts of the corner parts covered with each Al, openings are formed in an insulating layer and the Al and the protective resistor are brought into direct contact with each other through the opening. CONSTITUTION:A protective resistor 8 is formed the areas of its corner parts 16... widely and the upper parts of the corner parts 16... are respectively covered with each Al 18... formed in a prescribed area. Moreover, the Al 18... and the corner parts 16... of the resistor 8 are made contacts 20... directly to each other through openings formed in an insulating layer. Accordingly, as the areas of the corner parts 16... of the resistor 8 are formed widely, the current density at each corner part 16... becomes small and the heat generation at each corner part 16... is inhibited. Moreover, as the upper parts of the corner parts 16... are each covered with each Al 18... and the Al 18... and the resistor 8 are made contacts directly to each other, the heat dissipation effect of the heat generation of the resistor is enhanced greatly.

Description

【発明の詳細な説明】 （産業上の利用分野） 本発明は、ＣＭＯＳの入力段ゲートを静電破壊から保護
する保護装置に関する。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a protection device for protecting an input stage gate of a CMOS from electrostatic discharge damage.

（従来の技術） これまでにも、ＣＭＯＳの入力段ゲートを静電破壊から
保護する保護装置は種々提案されている。(Prior Art) Various protection devices have been proposed to protect CMOS input stage gates from electrostatic damage.

第２図は人力パッドとＣＭＯＳの入力段ゲートとの間に
設けられた保護装置の一例を示す回路図である。第２図
において、２は入力パッド、４は人力段ゲートである。FIG. 2 is a circuit diagram showing an example of a protection device provided between a human power pad and a CMOS input stage gate. In FIG. 2, 2 is an input pad and 4 is a manual stage gate.

６は入力パッド２と入力段ゲート４との間に設けられた
保護装置であり、この保護装置６は入力パッド２と人力
段ゲート４との間に直列に接続された保護抵抗８と、電
源ＶｃＣと接地部との間に互いに直列に接続された保護
ダイオード１０．１２とで構成されている。6 is a protection device provided between the input pad 2 and the input stage gate 4, and this protection device 6 includes a protection resistor 8 connected in series between the input pad 2 and the manual stage gate 4, and a power supply. It consists of protection diodes 10, 12 connected in series with each other between VcC and ground.

第３図は第２図の保護装置６における保護抵抗８の従来
構成を示す図である。第３図に示すように保護抵抗８は
絶縁層中にポリシリコン層により蛇行状に形成されてい
る。１４は絶縁層の窓開は部を介しての入力パッド２と
保護抵抗８とのコンタクトである。なお、第３図では保
護ダイオード１０．１２と入力段ゲート４とは図示して
いない。FIG. 3 is a diagram showing a conventional configuration of the protective resistor 8 in the protection device 6 of FIG. 2. As shown in FIG. 3, the protective resistor 8 is formed in a meandering shape using a polysilicon layer in an insulating layer. Reference numeral 14 indicates a contact between the input pad 2 and the protective resistor 8 through the opening in the insulating layer. Note that the protection diode 10.12 and the input stage gate 4 are not shown in FIG.

このような構成の保護装置６による保護作用は周知であ
るのでその説明は省略する。Since the protective effect of the protective device 6 having such a configuration is well known, its explanation will be omitted.

（発明が解決しようとする問題点） ところで、上記構成の保護装置６にあっては、保護抵抗
８の直列抵抗値を大きくしてその保護作用を高める一方
で、チップ面積の制約から蛇行状に形成されている。そ
のため、保護抵抗８のコーナ部１６・・・での電流密度
が高くなっている。(Problems to be Solved by the Invention) By the way, in the protection device 6 having the above configuration, although the series resistance value of the protection resistor 8 is increased to enhance its protective effect, the protection device 6 has a meandering shape due to the chip area limitation. It is formed. Therefore, the current density at the corner portions 16 of the protective resistor 8 is high.

しかしながら、電流密度が高くなると、保護抵抗８に流
れる電流によるそのコーナ部１６でのジュール熱による
発熱量が大きくなって保護抵抗８がそのコーナ部１６で
溶融して破断し易いという構成上の問題がある。However, as the current density increases, the amount of heat generated by the Joule heat at the corner portion 16 due to the current flowing through the protective resistor 8 increases, resulting in a structural problem that the protective resistor 8 is likely to melt and break at the corner portion 16. There is.

本発明は、上記問題点に鑑みてなされたものであって、
保護抵抗のコーナ部での電流密度を低くして保護抵抗が
電流による発熱で容易に溶融破断しないようにすること
を目的としている。The present invention has been made in view of the above problems, and includes:
The purpose of this is to lower the current density at the corners of the protective resistor so that the protective resistor does not easily melt and break due to heat generated by the current.

（問題点を解決するための手段） 本発明は前記目的を達成するために、保護抵抗のコーナ
部の面積が大きく形成され、そのコーナ部上がアルミニ
ウムで覆われるとともに、絶縁層に窓開けがなされ、そ
の窓を介してそのアルミニウムと保護抵抗とが直接にコ
ンタクトされたことを特徴としている。(Means for Solving the Problems) In order to achieve the above object, the present invention has a corner portion of a protective resistor having a large area, the top of the corner portion being covered with aluminum, and a window opening in the insulating layer. It is characterized in that the aluminum and the protective resistor are directly contacted through the window.

（作用） この構成によれば、保護抵抗のコーナ部の面積が大きく
構成されているから、そのコーナ部での電流密度が小さ
くなる。したがって、コーナ部での発熱が抑えられる。(Function) According to this configuration, since the area of the corner portion of the protective resistor is configured to be large, the current density at the corner portion becomes small. Therefore, heat generation at the corner portions is suppressed.

また、そのコーナ部上がアルミニウムで覆われ、しかも
そのアルミニウムと保護抵抗とが直接にコンタクトされ
であるから、その発熱の放熱効率が高まる。Further, since the top of the corner portion is covered with aluminum, and the aluminum and the protective resistor are in direct contact, the heat dissipation efficiency of the heat is increased.

（実施例） 以下、本発明の実施例を図面を参照して詳細に説明する
。この実施例の保護装置は、第２図に示される入力パッ
ドとＣＭＯＳの入力段ゲートとの間に設けられた保護装
置に適用される。第１図はそのような保護装置における
保護抵抗の構成図である。第１図において、８は保護抵
抗である。この保護抵抗８は各コーナ部１６・・・の面
積を大きく形成されである。そして、各コーナ部１６・
・・上ハ所定の面積に形成されたアルミニウム１８・・
・でそれぞれ覆われている。(Example) Hereinafter, an example of the present invention will be described in detail with reference to the drawings. The protection device of this embodiment is applied to the protection device provided between the input pad and the CMOS input stage gate shown in FIG. FIG. 1 is a block diagram of a protective resistor in such a protective device. In FIG. 1, 8 is a protective resistor. The protective resistor 8 is formed so that each corner portion 16 has a large area. And each corner part 16.
...Aluminum 18 formed in a predetermined area on the upper part...
・Each is covered with

また、アルミニウム１８・・・と保護抵抗８の各コーナ
部１６・・・とは絶縁層の窓開は部を介して直接にコン
タクト２０・・・されている。Further, the aluminum 18... and each corner portion 16... of the protective resistor 8 are in direct contact 20... through the apertures of the insulating layer.

したがって、この実施例では、保護抵抗８の各コーナ部
１６・・・の面積が大きく構成されているから、各コー
ナ部１６・・・での電流密度が小さくなって各コーナ部
１６・・・での発熱が抑えられる。Therefore, in this embodiment, since the area of each corner portion 16 of the protective resistor 8 is large, the current density at each corner portion 16 is small, and the current density at each corner portion 16 is small. Heat generation is suppressed.

また、そのコーナ部１６・・・上がアルミニウム１８・
・・で覆われており、かつそのアルミニウム１８・・・
と保護抵抗８とが直接にコンタクトされであるから、そ
の発熱の放熱効率が大きく高められる。Also, the corner part 16...the upper part is aluminum 18.
...and its aluminum 18...
Since the protective resistor 8 and the protective resistor 8 are in direct contact with each other, the heat dissipation efficiency of the heat generated by the protective resistor 8 is greatly improved.

（効果） 以上説明したことから明らかなように本発明によれば、
保護抵抗のコーナ部での電流密度を低くし、かつその電
流による発熱の放熱効率を高（なるように構成されたか
ら、保護抵抗が電流による発熱で容易に溶融破断するよ
うなことがない。(Effects) As is clear from the above explanation, according to the present invention,
Since the current density at the corners of the protective resistor is low and the heat dissipation efficiency of the heat generated by the current is high, the protective resistor does not easily melt and break due to the heat generated by the current.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図は本発明の一実施例に係る保護装置の構成図、第
２図は人力パッドと０ＭＯ８の人力段ゲートとの間の保
護装置の回路図、第３図は従来例の保護装置の構成図で
ある。 ２・・・入力パッド、４・・・人力段ゲート、６・・・
保護装置、８・・・保護抵抗、１６・・・コーナ部、Ｉ
８・・・アルミニウム、２０・・・コンタクト。Fig. 1 is a block diagram of a protection device according to an embodiment of the present invention, Fig. 2 is a circuit diagram of a protection device between a manual pad and a manual step gate of 0MO8, and Fig. 3 is a diagram of a conventional protection device. FIG. 2...Input pad, 4...Manual stage gate, 6...
Protective device, 8... Protective resistor, 16... Corner part, I
8...aluminum, 20...contact.

Claims (1)

【特許請求の範囲】[Claims] （１）入力パッドと入力段ゲートとが、絶縁層中にポリ
シリコン層により形成された蛇行状の保護抵抗で接続さ
れてなるＣＭＯＳの入力段ゲートの保護装置において、 前記保護抵抗のコーナ部の面積が大きく形成され、その
コーナ部上がアルミニウムで覆われるとともに、前記絶
縁層に窓開けがなされ、その窓を介してそのアルミニウ
ムと保護抵抗とが直接にコンタクトされたことを特徴と
するＣＭＯＳの入力段ゲートの保護装置。(1) In a CMOS input stage gate protection device in which an input pad and an input stage gate are connected by a meandering protective resistor formed of a polysilicon layer in an insulating layer, a corner portion of the protective resistor A CMOS having a large area, a corner portion of which is covered with aluminum, and a window is formed in the insulating layer, and the aluminum and the protective resistor are directly contacted through the window. Input stage gate protection device.
JP62308151A 1987-12-04 1987-12-04 Protective device for cmos input stage gate Pending JPH01149451A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62308151A JPH01149451A (en) 1987-12-04 1987-12-04 Protective device for cmos input stage gate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62308151A JPH01149451A (en) 1987-12-04 1987-12-04 Protective device for cmos input stage gate

Publications (1)

Publication Number Publication Date
JPH01149451A true JPH01149451A (en) 1989-06-12

Family

ID=17977509

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62308151A Pending JPH01149451A (en) 1987-12-04 1987-12-04 Protective device for cmos input stage gate

Country Status (1)

Country Link
JP (1) JPH01149451A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01202854A (en) * 1988-02-09 1989-08-15 Fujitsu Ltd Semiconductor integrated circuit
US10134511B2 (en) 2015-03-26 2018-11-20 Seiko Epson Corporation Resistance element, electrostatic protection circuit, temperature detection circuit, and electro-optic apparatus

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55134976A (en) * 1979-04-09 1980-10-21 Nec Corp Semiconductor device
JPS5724563A (en) * 1980-07-21 1982-02-09 Nec Corp Semiconductor device
JPS59124754A (en) * 1983-01-04 1984-07-18 Nec Corp integrated circuit device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55134976A (en) * 1979-04-09 1980-10-21 Nec Corp Semiconductor device
JPS5724563A (en) * 1980-07-21 1982-02-09 Nec Corp Semiconductor device
JPS59124754A (en) * 1983-01-04 1984-07-18 Nec Corp integrated circuit device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01202854A (en) * 1988-02-09 1989-08-15 Fujitsu Ltd Semiconductor integrated circuit
US10134511B2 (en) 2015-03-26 2018-11-20 Seiko Epson Corporation Resistance element, electrostatic protection circuit, temperature detection circuit, and electro-optic apparatus

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