JPH01154125A - Production of active matrix substrate - Google Patents
Production of active matrix substrateInfo
- Publication number
- JPH01154125A JPH01154125A JP62313661A JP31366187A JPH01154125A JP H01154125 A JPH01154125 A JP H01154125A JP 62313661 A JP62313661 A JP 62313661A JP 31366187 A JP31366187 A JP 31366187A JP H01154125 A JPH01154125 A JP H01154125A
- Authority
- JP
- Japan
- Prior art keywords
- varistor
- powder
- zno
- electrode
- active matrix
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 18
- 239000011159 matrix material Substances 0.000 title claims abstract description 14
- 238000004519 manufacturing process Methods 0.000 title claims description 12
- 239000000843 powder Substances 0.000 claims abstract description 20
- 239000011521 glass Substances 0.000 claims abstract description 17
- 239000002002 slurry Substances 0.000 claims abstract description 6
- 239000000654 additive Substances 0.000 claims abstract description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 5
- 239000002245 particle Substances 0.000 claims description 11
- 238000000034 method Methods 0.000 abstract description 11
- 239000000203 mixture Substances 0.000 abstract description 4
- 230000000996 additive effect Effects 0.000 abstract description 3
- 238000001354 calcination Methods 0.000 abstract description 3
- 238000007650 screen-printing Methods 0.000 abstract description 3
- 239000011248 coating agent Substances 0.000 abstract description 2
- 238000000576 coating method Methods 0.000 abstract description 2
- 238000004544 sputter deposition Methods 0.000 abstract description 2
- WMWLMWRWZQELOS-UHFFFAOYSA-N bismuth(iii) oxide Chemical compound O=[Bi]O[Bi]=O WMWLMWRWZQELOS-UHFFFAOYSA-N 0.000 abstract 2
- 238000000227 grinding Methods 0.000 abstract 2
- 238000002156 mixing Methods 0.000 abstract 1
- 238000007740 vapor deposition Methods 0.000 abstract 1
- 239000004973 liquid crystal related substance Substances 0.000 description 8
- 238000010586 diagram Methods 0.000 description 3
- 230000005669 field effect Effects 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 1
- 235000008331 Pinus X rigitaeda Nutrition 0.000 description 1
- 235000011613 Pinus brutia Nutrition 0.000 description 1
- 241000018646 Pinus brutia Species 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 239000000156 glass melt Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Landscapes
- Liquid Crystal (AREA)
Abstract
Description
【発明の詳細な説明】
Ａ、産業上の利用分野
本発明は、アクティブマトリクス基板の製造方法に関す
る。DETAILED DESCRIPTION OF THE INVENTION A. Field of Industrial Application The present invention relates to a method of manufacturing an active matrix substrate.
Ｂ１発明の概要
本発明は、ＺｎＯバリスタ形のアクティブマトリクス基
板の製造方法において、
ＺｎＯ粉末とＢｌｔＯ３等の添加物とを混合し焼成を繰
り返してバリスタ粉末とし、これとガラスフリットとを
混合分級して得たスラリを透明電極と一方の電極とを付
けたガラス基板上に塗布し、その後に他方の電極を形成
することにより、ＺｎＯの粒径分布の相違による動作特
性のばらつきを防止したものである。B1 Summary of the Invention The present invention is a method for manufacturing a ZnO varistor type active matrix substrate, in which ZnO powder and additives such as BltO3 are mixed and fired repeatedly to obtain varistor powder, and this is mixed and classified with glass frit. By applying the obtained slurry onto a glass substrate with a transparent electrode and one electrode attached, and then forming the other electrode, variations in operating characteristics due to differences in ZnO particle size distribution were prevented. .
Ｃ１従来の技術
液晶デイスプレーを行う液晶パネルは、パネルを構成す
る複数の画素と、夫々の画素を個別に駆動する駆動手段
とで構成される。C1 Prior Art A liquid crystal panel for producing a liquid crystal display is composed of a plurality of pixels forming the panel and driving means for individually driving each pixel.
駆動手段による駆動方式のひとつにアクティブマトリク
ス駆動方式があり、この方式には電界効果トランジスタ
（３端子）形のものと、非線形素子（２端子）形のもの
とがある。One of the driving methods using the driving means is an active matrix driving method, and this method includes a field effect transistor (three terminal) type and a nonlinear element (two terminal) type.
電界効果トランジスタ形のものとして、例えばａ−９ｉ
形Ｔ Ｆ Ｔ （ｔｈｉｎ ｆｉｌｍ ｔｒａｎｓｉｓ
ｔｏｒ）がある（第３図参照）。図中、１．２はガラス
、３゜４は偏光板、５はＳｉＯ２，６は透明電極、７は
ゲート、８はλ−Ｓｉ、９はソース、ＩＯはドレイン、
１１は液晶であり、図中の下方から光が照射される。ａ
−Ｓ ｉ形ＴＰＴは低温プロセスで作ることができ、低
価格であるというメリットがある。As a field effect transistor type, for example, a-9i
TFT (thin film transition)
tor) (see Figure 3). In the figure, 1.2 is glass, 3°4 is a polarizing plate, 5 is SiO2, 6 is a transparent electrode, 7 is a gate, 8 is λ-Si, 9 is a source, IO is a drain,
11 is a liquid crystal, and light is irradiated from below in the figure. a
-Si type TPT can be manufactured by a low-temperature process and has the advantage of being inexpensive.
非線形素子形のものとしては、例えばＺｎＯバリスタが
ある（第４図参照）。図中１２はＺ、 ｎ Ｏバリスタ
、１３．１４は電極であり、その他の部分のうち第３図
に付されている符号と同一符号の；Ｔ分は同一部分であ
る。ＺｎＯバリスタは、製作が容易でコストが安く、し
かも動作特性の温度依存性が極めて小さいというメリッ
トがある。An example of a nonlinear element type is a ZnO varistor (see FIG. 4). In the figure, 12 is a Z, nO varistor, 13 and 14 are electrodes, and among other parts, the same reference numerals as those shown in FIG. 3; and T are the same parts. ZnO varistors have the advantage of being easy to manufacture, low cost, and having extremely low temperature dependence in operating characteristics.
Ｄ１発明が解決しようとする問題点
ところが、電界効果トランジスタ形の駆動方式では各Ｆ
ＥＴが相互に分離しているために製作工程カリ９雑であ
り、−ヶのＰＥＴが不良であれば全体として使用不可能
となり、歩留りが悪いという問題がある。一方、ＺｎＯ
バリスタにおいてはＺｎＯの粒径分布が相違するために
動作特性がばらつくという問題がある。D1 Problem to be solved by the invention However, in the field effect transistor drive system, each F
Since the ETs are separated from each other, the manufacturing process is complicated, and if one or more PETs are defective, the entire product becomes unusable, resulting in a low yield. On the other hand, ZnO
Varistors have a problem in that operating characteristics vary due to differences in ZnO particle size distribution.
そこで本発明は斯かる問題を解決し、ＺｎＯの粒径分布
のばらつきのないアクティブマトリクス基板の製造方法
を提供することを目的とする。SUMMARY OF THE INVENTION An object of the present invention is to solve such problems and provide a method for manufacturing an active matrix substrate without variations in ZnO particle size distribution.
Ｅ 問題点を解決するための手段
斯かる目的を達成するための本発明の構成は、ＺｎＯ粉
末とＢｔｔ０３等を粉砕した添加物と水とを混合して仮
焼成し、この焼成物を粉砕して本焼成することによって
バリスタ粉末を作り、バリスタ粉末とガラスフリットと
を粉砕混合して粒度の揃ったバリスタ粉末のみに分級し
、これを高粘度のスラリとして、予め透明電極と一方の
電極とを付けたガラス基板上であって透明電極を除いた
部分に塗布し、その後に透明電極と接続させて他方の電
極を形成したことを特徴とする。E Means for Solving the Problem The structure of the present invention to achieve the above object is to mix a ZnO powder, an additive made by pulverizing Btt03, etc., with water, pre-calcine the mixture, and pulverize the calcined product. A varistor powder is made by firing the varistor powder, and the varistor powder and glass frit are pulverized and mixed to obtain only varistor powder with uniform particle size.This is made into a high viscosity slurry, and a transparent electrode and one electrode are mixed in advance. It is characterized in that it is applied to a portion of the attached glass substrate excluding the transparent electrode, and then connected to the transparent electrode to form the other electrode.
Ｆ、実施例
以下、本発明によるアクティブマトリクス基板の製造方
法の実施例を説明する。なお、本発明は前述したＺｎＯ
バリスタ形のアクティブマトリクス基板と同じ構成の基
板の製造方法に関するものなので、同一部分には同一符
号を付し、第１図のフローチャートに基づいて説明する
。F. Examples Hereinafter, examples of the method for manufacturing an active matrix substrate according to the present invention will be described. Note that the present invention is based on the above-mentioned ZnO
Since this relates to a method of manufacturing a substrate having the same configuration as a varistor-type active matrix substrate, the same parts are given the same reference numerals and will be explained based on the flowchart of FIG.
まず、ＺｎＯ粉末にＰＶＡと分散剤と水とを加えて液分
散する一方、Ｂ ｊ ｅｏ ３． Ｂ ｔｏ ３． Ｓ
！ Ｏｔ。First, PVA, a dispersant, and water are added to ZnO powder to perform liquid dispersion, while B j eo 3. B to 3. S
! Ot.
Ｍ ｎ Ｏｖなどの添加物に水を加えて粉砕し、これを
混合する。この混合したものを造粒して成形し、９００
〜１３００°Ｃで仮焼成して母材料を作り、母材料をボ
ールミル又はバイブロミルを用いて数ｌＯμｍの粒子と
なるように粉砕して再び成形する。Water is added to an additive such as M n Ov, pulverized, and mixed. This mixture is granulated and molded, and
A base material is prepared by pre-calcining at ~1300°C, and the base material is ground into particles of several 10 μm using a ball mill or vibromill and molded again.
このようにして粒径かそろいＺｎＯバリスタ特性が出る
バリスタ粉末に融点が４００°Ｃ前後のガラスフリット
を加えるとともに投入すべきパイン５μｍ以下の分級に
よって粒度調整し、粒径の揃ったバリスタ粉末のみとす
る。このあと、投入す−とする。In this way, glass frit with a melting point of around 400°C is added to the ZnO varistor powder with uniform particle size, and the particle size is adjusted by classifying the pine to be less than 5 μm, so that only varistor powder with uniform particle size is produced. do. After this, let's put it in.
一方、第２図（ａ）に示すようにガラスｌの表面に透明
電極６と一方の電極１４とを予め付着させておき、スク
リーン印刷法によって透明電極６を除いたガラス１の表
面にスラリーを１０〜３０μｍの厚さに塗布し、ガラス
が溶ける温度よりもｌＯｏＣ高い温度で焼結させる。す
ると、第２図（ｂ）に示すＺｎＯバリスタ１２が形成さ
れる。On the other hand, as shown in FIG. 2(a), a transparent electrode 6 and one electrode 14 are attached to the surface of the glass 1 in advance, and a slurry is applied to the surface of the glass 1 excluding the transparent electrode 6 by screen printing. It is applied to a thickness of 10 to 30 μm and sintered at a temperature 10oC higher than the temperature at which glass melts. Then, the ZnO varistor 12 shown in FIG. 2(b) is formed.
このあとは、不要部分におおいを被せて蒸着るスパッタ
等により他方の電極１３を形成すれば、第２図（ｃ）に
示すアクティブマトリクス基板が完成する。Thereafter, the other electrode 13 is formed by sputtering or the like by covering unnecessary parts and completing the active matrix substrate shown in FIG. 2(c).
以後は従来と同様に製作を進めて液晶１１やガラス２等
を設ければ、液晶素子ができ上がる。Thereafter, by proceeding with the manufacturing process in the same manner as before and providing the liquid crystal 11, glass 2, etc., the liquid crystal element is completed.
Ｇ１発明の詳細
な説明したように本発明によるアクティブマトリクス基
板の製造方法によれば、ガラスフリットを加えて分級に
よりＺｎＯバリスタの粒度調整をしたので、粒径分布の
ばらつきのないアクティブマトリクス基板を得ることが
でき、動作特性のばらつきが生じない。また、Ｚ ｎ
Ｏ−Ｂ ｉ ｔｏｓ系非直線抵抗体はすぐれ−た非直線
性を有するので液晶駆動に必要なしきい値電圧を３〜４
Ｖに簡単に調整でき、多結晶焼結体であるために劣化の
問題が生じず、ＺｎＯは電子の移動度がａ−Ｓｆに比べ
て大きく高速動作が可能である。更に、スクリーン印刷
−回塗りのみでダイオード成形ができるため、複雑なプ
ロセスを要せず大面積化が容易である。As explained in detail in the G1 invention, according to the method for manufacturing an active matrix substrate according to the present invention, the particle size of the ZnO varistor is adjusted by adding a glass frit and classifying, so that an active matrix substrate without variation in particle size distribution is obtained. This eliminates variations in operating characteristics. Also, Z n
The O-Bi tos type nonlinear resistor has excellent nonlinearity, so the threshold voltage required for driving the liquid crystal can be reduced to 3 to 4.
V can be easily adjusted, and since it is a polycrystalline sintered body, there is no problem of deterioration, and ZnO has higher electron mobility than a-Sf and can operate at high speed. Furthermore, since the diode can be formed by only screen printing and coating, a large area can be easily formed without requiring complicated processes.
第１図、第２図は本発明によるアクティブマトリクス基
板の製造方法に係り、第１図はフローチャート図、第２
図は（ａ）、（ｂ）、（ｃ）は説明図、第３図、第４図
は従来の技術に係り、第３図はａ−８ｉ形ＴＰＴの液晶
素子の構成図、第４図はＺｎＯバリスタ形の液晶素子の
構成図である。
ｌ・・・ガラス、６・・・透明電極、１２・・・ＺｎＯ
バリスタ、１３．１４・・・電極。
１ ： がラス
６： ｔＬ日月ｔ１ンヒ
１２：Ｚｎｏ バリスタ
１３．１４ ：電極1 and 2 relate to a method for manufacturing an active matrix substrate according to the present invention, FIG. 1 is a flowchart, and FIG.
Figures (a), (b), and (c) are explanatory diagrams, Figures 3 and 4 relate to conventional technology, Figure 3 is a configuration diagram of an a-8i type TPT liquid crystal element, and Figure 4 1 is a configuration diagram of a ZnO varistor type liquid crystal element. l...Glass, 6...Transparent electrode, 12...ZnO
Varistor, 13.14...electrode. 1: Galast 6: tL Sun Moon t1 Nhi 12: Zno Varistor 13.14: Electrode
Claims (1)
を混合して仮焼成し、この焼成物を粉砕して本焼成する
ことによってバリスタ粉末を作り、バリスタ粉末とガラ
スフリットとを粉砕混合して粒度の揃ったバリスタ粉末
のみに分級し、これを高粘度のスラリとして、予め透明
電極と一方の電極とを付けたガラス基板上であって透明
電極を除いた部分に塗布し、その後に透明電極と接続さ
せて他方の電極を形成したことを特徴とするアクティブ
マトリクス基板の製造方法。ZnO powder and additives such as pulverized Bi_2O_3 are mixed with water and pre-fired, the sintered product is pulverized and main-fired to produce varistor powder, and the varistor powder and glass frit are pulverized and mixed to adjust the particle size. The varistor powder is classified into uniform varistor powder, and this is applied as a high viscosity slurry onto the glass substrate to which a transparent electrode and one electrode have been attached, excluding the transparent electrode. A method of manufacturing an active matrix substrate, characterized in that the other electrode is formed by connecting the substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62313661A JPH01154125A (en) | 1987-12-11 | 1987-12-11 | Production of active matrix substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62313661A JPH01154125A (en) | 1987-12-11 | 1987-12-11 | Production of active matrix substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01154125A true JPH01154125A (en) | 1989-06-16 |
Family
ID=18043992
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62313661A Pending JPH01154125A (en) | 1987-12-11 | 1987-12-11 | Production of active matrix substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01154125A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2684221A1 (en) * | 1991-11-26 | 1993-05-28 | Thomson Csf | METHOD FOR MANUFACTURING ACTIVE MATRIX DISPLAY SCREENS, IN PARTICULAR LARGE DIMENSIONS |
-
1987
- 1987-12-11 JP JP62313661A patent/JPH01154125A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2684221A1 (en) * | 1991-11-26 | 1993-05-28 | Thomson Csf | METHOD FOR MANUFACTURING ACTIVE MATRIX DISPLAY SCREENS, IN PARTICULAR LARGE DIMENSIONS |
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