JPH0116290B2 - - Google Patents

Info

Publication number
JPH0116290B2
JPH0116290B2 JP59253497A JP25349784A JPH0116290B2 JP H0116290 B2 JPH0116290 B2 JP H0116290B2 JP 59253497 A JP59253497 A JP 59253497A JP 25349784 A JP25349784 A JP 25349784A JP H0116290 B2 JPH0116290 B2 JP H0116290B2
Authority
JP
Japan
Prior art keywords
powder
aluminum
silicon
thermal expansion
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP59253497A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61130438A (ja
Inventor
Atsushi Kuroishi
Kyoaki Akechi
Yoshiaki Ito
Jusuke Kotani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to JP59253497A priority Critical patent/JPS61130438A/ja
Priority to EP85112553A priority patent/EP0183016B1/en
Priority to DE8585112553T priority patent/DE3573137D1/de
Publication of JPS61130438A publication Critical patent/JPS61130438A/ja
Priority to US07/039,713 priority patent/US4830820A/en
Priority to US07/039,714 priority patent/US4926242A/en
Publication of JPH0116290B2 publication Critical patent/JPH0116290B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires

Landscapes

  • Powder Metallurgy (AREA)
JP59253497A 1984-10-03 1984-11-29 半導体装置用材料の製造方法 Granted JPS61130438A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP59253497A JPS61130438A (ja) 1984-11-29 1984-11-29 半導体装置用材料の製造方法
EP85112553A EP0183016B1 (en) 1984-10-03 1985-10-03 Material for a semiconductor device and process for its manufacture
DE8585112553T DE3573137D1 (en) 1984-10-03 1985-10-03 Material for a semiconductor device and process for its manufacture
US07/039,713 US4830820A (en) 1984-10-03 1987-04-20 Method for producing material for semiconductor device
US07/039,714 US4926242A (en) 1984-10-03 1987-04-20 Aluminum-silicon alloy heatsink for semiconductor devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59253497A JPS61130438A (ja) 1984-11-29 1984-11-29 半導体装置用材料の製造方法

Publications (2)

Publication Number Publication Date
JPS61130438A JPS61130438A (ja) 1986-06-18
JPH0116290B2 true JPH0116290B2 (2) 1989-03-23

Family

ID=17252197

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59253497A Granted JPS61130438A (ja) 1984-10-03 1984-11-29 半導体装置用材料の製造方法

Country Status (1)

Country Link
JP (1) JPS61130438A (2)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63208802A (ja) * 1987-02-26 1988-08-30 Mitsubishi Metal Corp 軽量化複合ろう付け部材
JPH01205055A (ja) * 1988-02-12 1989-08-17 Sumitomo Electric Ind Ltd 半導体装置用基板材料
JPH01319639A (ja) * 1988-06-17 1989-12-25 Mitsubishi Electric Corp 低熱膨張複合材料

Also Published As

Publication number Publication date
JPS61130438A (ja) 1986-06-18

Similar Documents

Publication Publication Date Title
US6114048A (en) Functionally graded metal substrates and process for making same
US5086333A (en) Substrate for semiconductor apparatus having a composite material
JP4360061B2 (ja) 半導体装置用部材およびそれを用いた半導体装置
JP3493844B2 (ja) 半導体基板材料とその製造方法及び該基板を用いた半導体装置
US4830820A (en) Method for producing material for semiconductor device
JPWO2000076940A1 (ja) 複合材料およびそれを用いた半導体装置
JP2000303126A (ja) ダイヤモンド−アルミニウム系複合材料およびその製造方法
JPH0116290B2 (2)
JP2000297301A (ja) 炭化珪素系複合材料とその粉末およびそれらの製造方法
JP3451979B2 (ja) 半導体装置
US5605558A (en) Nitrogenous aluminum-silicon powder metallurgical alloy
JP3371874B2 (ja) パワーモジュール
JP2810873B2 (ja) 半導体素子の放熱板用のＣｕ−Ｗ合金基板の製造方法
WO2002077304A1 (fr) Element dissipant la chaleur pour appareil electronique et procede de production de celui-ci
JP2815656B2 (ja) パッケージ型半導体装置の高強度放熱性構造部材
JPH0613494A (ja) 半導体装置用基板
JP4269853B2 (ja) 半導体素子搭載用基板向け複合材料およびその製造方法
JPH0995745A (ja) 低熱膨張・高熱伝導性銅複合材料及びその製造方法
JPS6316458B2 (2)
JPH0790413A (ja) 複合材料
JPH10231175A (ja) 低熱膨張・高熱伝導熱放散材料とその製造方法
JPS6139534A (ja) 半導体装置用基板材料
JP2000311973A (ja) 複合材料及び半導体装置
JP3408598B2 (ja) メタライズ用金属粉末組成物、メタライズ基板およびその製造方法
JPH08253833A (ja) 銅モリブデン合金およびその製造方法