JPH0116511Y2 - - Google Patents

Description

[Detailed explanation of the invention] (a) Technical field of the invention This invention is a chemical vapor deposition (CVD) method for forming an oxide film etc. on a silicon substrate by vapor phase growth in the manufacturing process of semiconductor devices.
The present invention relates to CVD equipment, particularly the coil structure of cold wall CVD equipment.

(b) Prior Art and Problems In the manufacturing process of semiconductor devices, a plurality of disk carbon susceptors 2 are arranged in a reaction tube 1 as shown in FIG. (not shown), the heating element of the susceptor 2 is heated to a predetermined temperature by a high-frequency heating coil 3 made of a copper pipe provided on the outer periphery of the reaction tube 1. The held substrate is heated to a predetermined temperature, and the reaction tube 1
There is a CVD apparatus that forms a desired deposited film on a substrate by thermally decomposing a desired gas within the substrate.

Note that the copper pipe is cooled by a water flow flowing through the copper pipe. In a so-called cold wall CVD device having such a structure, compared to a structure in which the reaction tube is simultaneously heated to a predetermined temperature like a hot wall CVD device, the reaction tube 1 is heated to a predetermined temperature.
Since the temperature is low, the growth of the deposited film adhering to the inner wall of the reaction tube 1 is suppressed, and the deposited film is characterized by less peeling from the tube wall.

However, the structure of the high-frequency heating coil 3 of the conventional cold wall CVD apparatus is simply provided in the form of a coil in an exposed state on the outer periphery of the reaction tube 1 as shown in the figure, and the high-frequency heating coil 3 deforms during the period of use. This causes problems such as uneven temperature distribution in the heated state of the susceptor 2 in the reaction tube, which adversely affects the growth of the deposited film on the substrate.
It also had the disadvantage of being exposed, which caused a dangerous problem in terms of safety.

(c) Purpose of the invention The purpose of the invention is to support and fix the high-frequency heating coil of a cold wall CVD device, eliminate distortion of the coil, and enable uniform temperature distribution. Another object of the present invention is to provide a CVD device having a safe high-frequency heating coil structure by providing a cover tube.

(d) Structure of the invention According to the invention, the purpose is to provide a cylindrical supporting and fixing frame made of an insulator that fixes and supports a high-frequency heating coil on its surface, an insulating tube that concentrically covers the outer periphery of the supporting and fixing frame, and This is achieved by a vapor phase growth apparatus characterized by a reaction tube mounted concentrically within a supporting fixed frame.

(e) Embodiments of the invention Examples of the invention will be described below with reference to the drawings. FIG. 2 is a cross-sectional view of a main part of an embodiment of the present invention. FIG. 3 a is a perspective view of the high-frequency heating coil structure of the present invention, and FIG. 3 b is a partially enlarged cross-sectional view of FIG. 3 a. The same parts as in the previous figure are given the same reference numerals. In Fig. 2, 11 is a reaction tube, 12
Reference numeral 13 indicates a supporting and fixing frame formed of an insulator, 13 indicates a high-frequency heating coil, and 14 indicates an insulating tube concentric with the reaction tube. Further, the high-frequency heating coil structure of the present invention will be explained with reference to FIGS. 3a and 3b. For example, as shown in FIG. A high-frequency heating coil 13 made of, for example, a copper pipe is formed on the outside of the groove 1 at a predetermined position of the supporting and fixing frame 12, as shown in the enlarged view of FIG. 3b.
5, and the high frequency heating coil 13 is supported and fixed. The copper pipe is cooled by a stream of water flowing through the copper pipe. A high-frequency heating coil 13 wound around a supporting fixed frame 12 has an insulating tube 1 concentric with the reaction tube on the outside thereof.
4 as shown.

In the high-frequency heating coil structure of the present invention configured as described above, the high-frequency heating coil 13 is fixed by the support and fixing frame 12, so deformation and distortion of the high-frequency heating coil 13 is prevented, and furthermore, the insulating tube 14, safety issues can also be solved.

(f) Effect of the invention As explained above, in this invention, the high-frequency heating coil of the cold wall CVD equipment is supported and fixed, thereby eliminating deformation and distortion of the coil, making it possible to uniformly heat the substrate inside the reaction tube, and improving quality. This is effective for improving safety, and providing a cover pipe is also effective for safety.

[Brief explanation of the drawing]

FIG. 1 is a schematic plan view of the main parts for explaining a conventional device, FIG. 2 is a sectional view of the main parts of an embodiment of the present invention, and FIG. 3a is a perspective view of the high-frequency heating coil structure of the present invention. FIG. 3b is a partially enlarged sectional view of FIG. 3a. In the figure, 11 is a reaction tube, 12 is a supporting fixed frame,
13 is a high-frequency heating coil, and 14 is an insulating tube.

Claims (1)

[Scope of utility model registration request] A cylindrical support and fixation frame made of an insulator that fixedly supports the high-frequency heating coil on the surface, an insulating tube that concentrically covers the outer periphery of the support and fixation frame, and a reaction tube that is installed concentrically within the support and fixation frame. A vapor phase growth apparatus characterized by: