JPH01169028U - - Google Patents
Info
- Publication number
- JPH01169028U JPH01169028U JP6482688U JP6482688U JPH01169028U JP H01169028 U JPH01169028 U JP H01169028U JP 6482688 U JP6482688 U JP 6482688U JP 6482688 U JP6482688 U JP 6482688U JP H01169028 U JPH01169028 U JP H01169028U
- Authority
- JP
- Japan
- Prior art keywords
- electrode plate
- heater
- semiconductor manufacturing
- reaction chamber
- device characterized
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 238000007599 discharging Methods 0.000 claims 1
- 239000010409 thin film Substances 0.000 description 3
Landscapes
- Chemical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Description
第１図は本考案の第１の実施例にかかる半導体
製造装置の縦断面図であり、半導体ウエハＷの表
面を上向きに薄膜を形成する状態を示し、第２図
は同実施例における半導体ウエハＷの表面を下向
きに薄膜を形成する状態を示す縦断面図、第３図
は本考案の第２の実施例にかかる半導体製造装置
の縦断面であり、半導体ウエハＷの表面を上向き
に薄膜を形成する状態を示し、第４図は同実施例
における半導体ウエハＷの表面を下向きに薄膜を
形成する状態を示す縦断面図、第５図、第６図は
いずれも従来の半導体製造装置を示す縦断面図で
ある。
２，２１……反応室、３……上部ヒータ、４…
…下部ヒータ、５……上部電極板、６……下部電
極板、２５……ヒータ、２６……電極板、Ｗ……
半導体ウエハ。
FIG. 1 is a vertical cross-sectional view of a semiconductor manufacturing apparatus according to a first embodiment of the present invention, showing a state in which a thin film is formed upward on the surface of a semiconductor wafer W, and FIG. FIG. 3 is a vertical cross-sectional view of a semiconductor manufacturing apparatus according to a second embodiment of the present invention, showing a state in which a thin film is formed with the surface of a semiconductor wafer W facing upward. FIG. 4 is a vertical sectional view showing a state in which a thin film is formed downward on the surface of a semiconductor wafer W in the same embodiment, and FIGS. 5 and 6 both show a conventional semiconductor manufacturing apparatus. FIG. 2, 21...Reaction chamber, 3...Upper heater, 4...
... lower heater, 5 ... upper electrode plate, 6 ... lower electrode plate, 25 ... heater, 26 ... electrode plate, W ...
semiconductor wafer.
Claims (1)
設け、これらヒータを放電用の上部電極板と下部
電極板とでそれぞれカバーしたことを特徴とする
半導体製造装置。 (2) 垂直回転自在な反応室の内部に、ヒータと
電極板を上下に対向させて設けたことを特徴とす
る半導体製造装置。[Claims for Utility Model Registration] (1) A semiconductor manufacturing device characterized in that an upper heater and a lower heater are provided inside a reaction chamber, and these heaters are respectively covered by an upper electrode plate and a lower electrode plate for discharging. . (2) A semiconductor manufacturing device characterized in that a heater and an electrode plate are provided vertically facing each other inside a vertically rotatable reaction chamber.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6482688U JPH01169028U (en) | 1988-05-17 | 1988-05-17 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6482688U JPH01169028U (en) | 1988-05-17 | 1988-05-17 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01169028U true JPH01169028U (en) | 1989-11-29 |
Family
ID=31290282
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6482688U Pending JPH01169028U (en) | 1988-05-17 | 1988-05-17 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01169028U (en) |
-
1988
- 1988-05-17 JP JP6482688U patent/JPH01169028U/ja active Pending