JPH0117251B2 - - Google Patents
Info
- Publication number
- JPH0117251B2 JPH0117251B2 JP58052531A JP5253183A JPH0117251B2 JP H0117251 B2 JPH0117251 B2 JP H0117251B2 JP 58052531 A JP58052531 A JP 58052531A JP 5253183 A JP5253183 A JP 5253183A JP H0117251 B2 JPH0117251 B2 JP H0117251B2
- Authority
- JP
- Japan
- Prior art keywords
- light
- tip
- optical fiber
- semiconductor
- metal contact
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
Landscapes
- Light Receiving Elements (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58052531A JPS59178742A (ja) | 1983-03-30 | 1983-03-30 | 半導体受光素子の特性測定方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58052531A JPS59178742A (ja) | 1983-03-30 | 1983-03-30 | 半導体受光素子の特性測定方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59178742A JPS59178742A (ja) | 1984-10-11 |
| JPH0117251B2 true JPH0117251B2 (pl) | 1989-03-29 |
Family
ID=12917336
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58052531A Granted JPS59178742A (ja) | 1983-03-30 | 1983-03-30 | 半導体受光素子の特性測定方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59178742A (pl) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0617292Y2 (ja) * | 1987-12-09 | 1994-05-02 | 日本電気株式会社 | 半導体受光素子の検査装置 |
| JP2727799B2 (ja) * | 1991-07-11 | 1998-03-18 | 日本電気株式会社 | 半導体集積回路 |
| US6731122B2 (en) | 2001-08-14 | 2004-05-04 | International Business Machines Corporation | Wafer test apparatus including optical elements and method of using the test apparatus |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5791534A (en) * | 1980-11-28 | 1982-06-07 | Nec Corp | Lifetime tester for light receiving semiconductor device |
-
1983
- 1983-03-30 JP JP58052531A patent/JPS59178742A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59178742A (ja) | 1984-10-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5177351A (en) | Method and apparatus for determining the minority carrier diffusion length from linear constant photon flux photovoltage measurements | |
| US5025145A (en) | Method and apparatus for determining the minority carrier diffusion length from linear constant photon flux photovoltage measurements | |
| US4393348A (en) | Method and apparatus for determining minority carrier diffusion length in semiconductors | |
| US11435392B2 (en) | Inspection method and inspection system | |
| JP3628344B2 (ja) | 半導体検査装置 | |
| KR20050002819A (ko) | 집적 회로의 동적 진단 테스트를 위한 장치 및 방법 | |
| US20080036464A1 (en) | Probes and methods for semiconductor wafer analysis | |
| CN110579699A (zh) | 一种芯片测试装置 | |
| US4644264A (en) | Photon assisted tunneling testing of passivated integrated circuits | |
| CN110361643A (zh) | 紫外可见光光敏复合介质栅mosfet探测器测试系统及方法 | |
| US4924096A (en) | Non-contact testing of photovoltaic detector arrays | |
| JPS6231136A (ja) | 光半導体素子の評価装置 | |
| JPH0117251B2 (pl) | ||
| CN101614610B (zh) | 一种测量InGaAs探测器偏振敏感响应的装置 | |
| US3767304A (en) | Apparatus and method for detection of internal semiconductor inclusions | |
| US6034535A (en) | Method utilizing a modulated light beam for determining characteristics such as the doping concentration profile of a specimen of semiconductor material | |
| JP2947288B2 (ja) | 半導体集積回路用試験装置および該装置のプローブ位置制御方法 | |
| JPS62283684A (ja) | 光プロ−ブ装置 | |
| Cooper et al. | Measurement of charge-carrier behaviour in PIN diodes using a laser technique | |
| US5444389A (en) | Method and apparatus for measuring lifetime of minority carriers in semiconductor | |
| CN118565383A (zh) | 双晶单色器平行度动态测量系统、方法 | |
| JPH05183192A (ja) | 面発光・受光素子の検査装置 | |
| JPS6242537Y2 (pl) | ||
| CN119828207B (zh) | 一种半导体漂移室探测器漂移特性的测试系统及方法 | |
| JPS63248141A (ja) | 光半導体特性測定装置 |