JPH01180970A - 減圧表面処理装置 - Google Patents

減圧表面処理装置

Info

Publication number
JPH01180970A
JPH01180970A JP63005388A JP538888A JPH01180970A JP H01180970 A JPH01180970 A JP H01180970A JP 63005388 A JP63005388 A JP 63005388A JP 538888 A JP538888 A JP 538888A JP H01180970 A JPH01180970 A JP H01180970A
Authority
JP
Japan
Prior art keywords
surface treatment
reduced pressure
sample
pressure surface
vacuum chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP63005388A
Other languages
English (en)
Other versions
JPH06104898B2 (ja
Inventor
Tadahiro Omi
忠弘 大見
Sunao Shibata
直 柴田
Masaru Umeda
優 梅田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Corp
Original Assignee
Mitsubishi Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Corp filed Critical Mitsubishi Corp
Priority to JP63005388A priority Critical patent/JPH06104898B2/ja
Priority to PCT/JP1989/000026 priority patent/WO1993013238A1/ja
Priority to US07/536,548 priority patent/US5110438A/en
Publication of JPH01180970A publication Critical patent/JPH01180970A/ja
Publication of JPH06104898B2 publication Critical patent/JPH06104898B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32697—Electrostatic control
    • H01J37/32706—Polarising the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3343—Problems associated with etching
    • H01J2237/3348—Problems associated with etching control of ion bombardment energy

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】 ８　補正の内容 （１）明細書の第２７頁第２行乃至第３行に「除去でき
るのである。」とあるを「除去できる。例えは、Ａｒ中
に１％〜３０％のＨ２（水素）を混合することによって
、遊離カーホン、ハイドロカーボン等がＣＨ４，Ｈ２０
になって除去されるからである。たたし、２つの点で注
意が必要である。
第１に、排気ポンプに関する注意点である。排気ポンプ
としては水素に対する排気容量が小さいターボポンプは
使用できず、また、ターボポンプを使用する場合にはタ
ーボポンプによる水素の排気速度は、他のガスの排気速
度に比へて略々１桁落ちるから、水素の流量を通常に混
合した場合に比べて略々１／１０にしなければならない
。第２に、Ａｒ中に水素を混合したままだとＳｉ表面に
Ｈ２が吸着するので、成膜直前にはＨ２を遮断する方が
より有効である点で、たたし、成膜雰囲気が十分に清浄
でない場合には、Ｈ２を流したままで成膜しても有効で
ある。」と補正する。

Claims (6)

    【特許請求の範囲】
  1. （１）少なくとも一つの真空室と、これに接続された排
    気装置とガス供給装置を有する減圧装置において、試料
    を保持するための試料ホルダと、前記試料の表面に、一
    切薄膜を堆積させることなくイオンを照射する手段と、
    前記イオンの運動エネルギを所望の値に制御する手段と
    を備えたことを特徴とする減圧表面処理装置。
  2. （２）前記真空室の内部に配設されたターゲットおよび
    前記試料ホルダに高周波電力を供給する手段を有したこ
    とを特徴とする前記特許請求の範囲第１項に記載の減圧
    表面処理装置。
  3. （３）前記試料ホルダに印加される高周波の周波数が前
    記ターゲットに印加される高周波の周波数よりも小なる
    ことを特徴とする前記特許請求の範囲第２項または第３
    項に記載の減圧表面処理装置。
  4. （４）前記ホルダに印加される高周波の周波数が１００
    ＭＨｚより大なることを特徴とする前記特許請求の範囲
    第２項に記載の減圧表面処理装置。
  5. （５）前記真空室に接続された少なくとも１つ以上の薄
    膜成長装置を有し、前記真空室と前記薄膜成長装置間に
    おける試料の搬送が一切大気にふれることなく行える手
    段を有したことを特徴とする前記特許請求の範囲第１項
    乃至第４項のいずれか１項に記載の減圧表面処理装置。
  6. （６）イオンの運動エネルギは３０ｅＶ以下である特許
    請求の範囲第１項乃至第５項のいずれか１項に記載の減
    圧表面処理装置。
JP63005388A 1988-01-13 1988-01-13 減圧表面処理装置 Expired - Lifetime JPH06104898B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP63005388A JPH06104898B2 (ja) 1988-01-13 1988-01-13 減圧表面処理装置
PCT/JP1989/000026 WO1993013238A1 (fr) 1988-01-13 1989-01-12 Procede et appareil de traitement de surface sous vide
US07/536,548 US5110438A (en) 1988-01-13 1989-01-12 Reduced pressure surface treatment apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63005388A JPH06104898B2 (ja) 1988-01-13 1988-01-13 減圧表面処理装置

Publications (2)

Publication Number Publication Date
JPH01180970A true JPH01180970A (ja) 1989-07-18
JPH06104898B2 JPH06104898B2 (ja) 1994-12-21

Family

ID=11609779

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63005388A Expired - Lifetime JPH06104898B2 (ja) 1988-01-13 1988-01-13 減圧表面処理装置

Country Status (3)

Country Link
US (1) US5110438A (ja)
JP (1) JPH06104898B2 (ja)
WO (1) WO1993013238A1 (ja)

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US5272417A (en) * 1989-05-12 1993-12-21 Tadahiro Ohmi Device for plasma process
JPH06108252A (ja) * 1992-09-16 1994-04-19 Internatl Business Mach Corp <Ibm> 選択的な金の低温化学蒸着

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US5259922A (en) * 1990-08-14 1993-11-09 Matsushita Electric Industrial Co., Ltd. Drying etching method
JPH0751755B2 (ja) * 1991-06-21 1995-06-05 川崎製鉄株式会社 プラズマｃｖｄ装置
US5424905A (en) * 1992-03-31 1995-06-13 Matsushita Electric Company, Ltd. Plasma generating method and apparatus
JPH0613196A (ja) * 1992-06-25 1994-01-21 Matsushita Electric Ind Co Ltd プラズマ発生方法および発生装置
JP3351843B2 (ja) * 1993-02-24 2002-12-03 忠弘 大見 成膜方法
DE4324683C1 (de) * 1993-07-22 1994-11-17 Fraunhofer Ges Forschung Verfahren zur Anpassung des Generators bei bipolaren Niederdruck-Glimmprozessen
US5900103A (en) 1994-04-20 1999-05-04 Tokyo Electron Limited Plasma treatment method and apparatus
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US6391147B2 (en) 1994-04-28 2002-05-21 Tokyo Electron Limited Plasma treatment method and apparatus
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RU2165474C2 (ru) * 1999-05-27 2001-04-20 Всероссийский научно-исследовательский институт авиационных материалов Способ обработки поверхности металлических изделий
US6566272B2 (en) 1999-07-23 2003-05-20 Applied Materials Inc. Method for providing pulsed plasma during a portion of a semiconductor wafer process
RU2192501C2 (ru) * 2000-04-20 2002-11-10 ОАО "Научно-производственное объединение энергетического машиностроения им. акад. В.П.Глушко" Способ вакуумного ионно-плазменного нанесения покрытий на подложку
US6498107B1 (en) * 2000-05-01 2002-12-24 Epion Corporation Interface control for film deposition by gas-cluster ion-beam processing
JP4514911B2 (ja) * 2000-07-19 2010-07-28 東京エレクトロン株式会社 プラズマ処理装置
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KR101247857B1 (ko) * 2004-06-21 2013-03-26 도쿄엘렉트론가부시키가이샤 플라즈마 처리 장치
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JP4550507B2 (ja) * 2004-07-26 2010-09-22 株式会社日立ハイテクノロジーズ プラズマ処理装置
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JP4827081B2 (ja) * 2005-12-28 2011-11-30 東京エレクトロン株式会社 プラズマエッチング方法およびコンピュータ読み取り可能な記憶媒体
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JPH06108252A (ja) * 1992-09-16 1994-04-19 Internatl Business Mach Corp <Ibm> 選択的な金の低温化学蒸着

Also Published As

Publication number Publication date
US5110438A (en) 1992-05-05
JPH06104898B2 (ja) 1994-12-21
WO1993013238A1 (fr) 1993-07-08

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