JPH0118152B2 - - Google Patents

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Publication number
JPH0118152B2
JPH0118152B2 JP61172997A JP17299786A JPH0118152B2 JP H0118152 B2 JPH0118152 B2 JP H0118152B2 JP 61172997 A JP61172997 A JP 61172997A JP 17299786 A JP17299786 A JP 17299786A JP H0118152 B2 JPH0118152 B2 JP H0118152B2
Authority
JP
Japan
Prior art keywords
gas
outlet valve
flow rate
valve
reaction vessel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP61172997A
Other languages
Japanese (ja)
Other versions
JPS6328875A (en
Inventor
Takuji Nagira
Isamu Morisako
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Anelva Corp
Original Assignee
Canon Anelva Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Anelva Corp filed Critical Canon Anelva Corp
Priority to JP17299786A priority Critical patent/JPS6328875A/en
Publication of JPS6328875A publication Critical patent/JPS6328875A/en
Publication of JPH0118152B2 publication Critical patent/JPH0118152B2/ja
Granted legal-status Critical Current

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  • Chemical Vapour Deposition (AREA)

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、微少流量のガスを半導体製造装置な
どにおける減圧容器中に高速応答性良好に導入す
るガス導入方法に関するものである。
DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a gas introduction method for introducing a minute flow rate of gas into a reduced pressure container in semiconductor manufacturing equipment or the like with good high-speed response.

〔従来の技術〕 従来のガス導入方法は、微少流量のガスを第4
図に示すような構成を用いて減圧状態にある反応
容器1に導入制御していた。以下詳述する。
[Prior art] In the conventional gas introduction method, a minute flow rate of gas is introduced into the fourth
The introduction into the reaction vessel 1 under reduced pressure was controlled using the configuration shown in the figure. The details will be explained below.

第4図において、反応容器1は排気弁2を介し
て排気ポンプ3によつて排気され、減圧状態にあ
る。ガスは入口弁10を介して流量制御器11に
導入され、当該流量制御器11内に設けた流量制
御弁12によつて設定した所定流量に制御され、
出口弁13を介して反応容器1に導入される。
In FIG. 4, the reaction vessel 1 is evacuated by the exhaust pump 3 via the exhaust valve 2 and is in a reduced pressure state. The gas is introduced into a flow rate controller 11 via an inlet valve 10, and is controlled to a predetermined flow rate by a flow rate control valve 12 provided in the flow rate controller 11,
It is introduced into the reaction vessel 1 via the outlet valve 13.

ガスを反応容器1に導入したり、あるいは導入
を停止したりする制御は、出口弁13、入口弁1
0を開閉、あるいは流量制御弁12を通過する流
量を所定値と零とに調整することによつて行つて
いた。
Control for introducing or stopping the introduction of gas into the reaction vessel 1 is performed by the outlet valve 13 and the inlet valve 1.
This is done by opening and closing 0 or by adjusting the flow rate passing through the flow rate control valve 12 to a predetermined value or zero.

また、第4図図中点線を用いて示すように、キ
ヤリアガスをキヤリアガス導入弁31を介してガ
ス流路に導入することによつて、流量を増大させ
てガスが反応容器1に導入されるいわゆるレスポ
ンスを良好にすることが行われていた。
Further, as shown using the dotted line in FIG. 4, by introducing the carrier gas into the gas flow path via the carrier gas introduction valve 31, the flow rate is increased and the gas is introduced into the reaction vessel 1. Efforts were made to improve response.

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

しかし、従来の第4図に示すような構成を採用
してガスを反応容器1に導入したり、あるいは導
入を停止したりする導入制御は、出口弁13、入
口弁10を開閉、あるいは流量制御弁12を通過
する流量を所定値と零とに設定して行つていたた
め、反応容器1に導入するガス流量の時間的変化
が第5図に示すような特性になつていた。即ち、
実線を用いて示すように、出口弁13、入口弁1
0を開状態、あるいは流量制御弁12を通過する
ガスの流量を所定流量値に設定してガスを反応容
器1に導入開始(図中)してから、図中を用
いて示す安定した所定ガス流量を反応容器1に導
入し得るようになる迄に時間Δt1を要していた。
図中時間Δt3は、ガスを所定時間の間、反応容器
1に導入する時間を示す。そして、出口弁13も
しくは入口弁10を閉状態、あるいは流量制御弁
12を通過するガス流量を零に設定してガスの導
入を停止(図中)してから、図中を用いて示
すガス流量が零になる迄に時間Δt2を要してい
た。これら導入当初にガス流量が安定するまでの
時間Δt1、およびガスの導入が停止するまでの時
間Δt2は、流量制御器11の特性、流量制御器1
1および配管の内容積、および設定流量などによ
つて決まるが、特に制御すべき流量が微少である
場合には、見掛け上の流量制御時間Δt3に比較し
て前記時間Δt1およびΔt2が大きくなり、無視で
きなくなり、微少流量ガスの導入制御を高速に行
えないという問題点があつた。
However, the conventional introduction control for introducing or stopping the introduction of gas into the reaction vessel 1 using the configuration shown in FIG. Since the flow rate passing through the valve 12 was set at a predetermined value and zero, the temporal change in the flow rate of the gas introduced into the reaction vessel 1 had a characteristic as shown in FIG. That is,
As shown using solid lines, the outlet valve 13 and the inlet valve 1
0 is in the open state or the flow rate of gas passing through the flow rate control valve 12 is set to a predetermined flow rate value and gas is introduced into the reaction vessel 1 (in the figure), and then the stable predetermined gas shown in the figure is set. A time Δt 1 was required before a flow rate could be introduced into the reaction vessel 1.
Time Δt 3 in the figure indicates the time during which the gas is introduced into the reaction vessel 1 for a predetermined period of time. Then, after closing the outlet valve 13 or the inlet valve 10 or setting the gas flow rate passing through the flow rate control valve 12 to zero to stop the introduction of gas (as shown in the figure), the gas flow rate shown in the figure is adjusted. It took time Δt 2 for it to become zero. The time Δt 1 until the gas flow rate stabilizes at the beginning of introduction, and the time Δt 2 until the gas introduction stops are determined by the characteristics of the flow rate controller 11,
1, the internal volume of the piping, and the set flow rate, etc., but especially when the flow rate to be controlled is minute, the times Δt 1 and Δt 2 are smaller than the apparent flow rate control time Δt 3 . This caused the problem that it became too large to be ignored, and that it was not possible to control the introduction of a minute flow rate of gas at high speed.

また、第4図図中点線を用いて示すキヤリアガ
ス導入弁31を設け、キヤリアガスをガスの流路
部分例えば出口弁13と反応容器1との接続部分
に導入する構成を採用して、微少流量ガスの導入
制御を高速に行う試みがなされている。これによ
り、第5図図中点線を用いて示すようにガスを導
入開始(図中)してから流量が安定状態になる
までの時間Δt2′を若干小さくすることが可能であ
るが、未だ十分小さくし得ないと共に、ガス導入
開始当初にガス流量のいわゆるオーバーシユーテ
イングおよびハンチングなどが生じてしまい所定
流量を高速に導入・停止し得ないという問題点が
あつた。
Furthermore, a configuration is adopted in which a carrier gas introduction valve 31 shown using the dotted line in FIG. Attempts are being made to quickly control the introduction of As a result, as shown by the dotted line in Figure 5, it is possible to slightly reduce the time Δt 2 ' from when gas introduction starts (in the figure) until the flow rate reaches a stable state. There was a problem in that it could not be made sufficiently small and that so-called overshooting and hunting of the gas flow rate occurred at the beginning of gas introduction, making it impossible to introduce and stop a predetermined flow rate at high speed.

〔発明の目的〕[Purpose of the invention]

本発明は、流量制御器の特性、配管などの内容
積、および設定流量などに依存することなく、微
少流量ガスの導入・停止を高速に行うガス導入方
法を提供することを目的としている。
SUMMARY OF THE INVENTION An object of the present invention is to provide a gas introduction method that rapidly introduces and stops gas at a small flow rate without depending on the characteristics of a flow rate controller, the internal volume of piping, etc., and the set flow rate.

〔問題点を解決するための手段〕[Means for solving problems]

本発明は、前記問題点を解決するために、第1
図に示すように流量制御器11によつて流量制御
されたガスを減圧された反応容器1に導入する出
口弁A13と、キヤリアガスを流量制御器11と
出口弁A13との接続部分に導入するキヤリアガ
ス導入弁20と、流量制御器11と出口弁A13
との接続部分に導入されたガスおよびキヤリアガ
スを排気する出口弁B14と、この出口弁B14
によつて排気される排気流量を制御するしぼり弁
B15とを設け、ガスを反応容器1に導入する際
に、第1に、出口弁A13を閉および出口弁B1
4を少なくとも開にして、出口弁B14およびし
ぼり弁B15を用いて流量制御器11から導入さ
れるガスを少なくとも排気すると共に出口弁A1
3の入口における圧力を所定値Pにし、第2に、
出口弁A13を開および出口弁B14を閉にし
て、ガスを反応容器1に導入するようにしてい
る。
In order to solve the above-mentioned problems, the present invention provides a first
As shown in the figure, there is an outlet valve A13 for introducing the gas whose flow rate is controlled by the flow rate controller 11 into the depressurized reaction vessel 1, and a carrier gas for introducing the carrier gas into the connecting portion between the flow rate controller 11 and the outlet valve A13. Inlet valve 20, flow rate controller 11 and outlet valve A13
an outlet valve B14 for exhausting the gas introduced into the connection part with the carrier gas; and this outlet valve B14.
A throttle valve B15 is provided to control the flow rate of the exhaust gas exhausted by the reaction vessel 1. When introducing gas into the reaction vessel 1, first, the outlet valve A13 is closed and the outlet valve B1 is closed.
4 is opened at least, the gas introduced from the flow rate controller 11 is exhausted using the outlet valve B14 and the throttle valve B15, and the outlet valve A1 is opened.
The pressure at the inlet of No. 3 is set to a predetermined value P, and secondly,
Gas is introduced into the reaction vessel 1 by opening the outlet valve A13 and closing the outlet valve B14.

〔作用〕[Effect]

第1図に示すような構成を採用し、まず、流量
制御弁12を用いてガス流量を所定値に設定する
と共に、出口弁A13を閉、出口弁B14を開、
およびキヤリアガス導入弁20を開にし、しぼり
弁B15を調整して出口弁A13の入口部分の圧
力を所定値P(出口弁A13および出口弁B14
を交互に開閉した時に、変動しない値)に設定す
るように排気ポンプB16を用いて排気する。
Adopting the configuration shown in FIG. 1, first, the flow rate control valve 12 is used to set the gas flow rate to a predetermined value, the outlet valve A13 is closed, the outlet valve B14 is opened,
Then, open the carrier gas introduction valve 20, adjust the throttle valve B15, and set the pressure at the inlet of the outlet valve A13 to a predetermined value P (outlet valve A13 and outlet valve B14).
The exhaust pump B16 is used to evacuate the air so that it is set to a value that does not change when the pump is opened and closed alternately.

次に、出口弁A13を開および出口弁B14を
閉にし、流量制御弁12によつて所定流量に制御
されたガスを当該出口弁A13を介して反応容器
1に導入する。以降の反応容器1へのガスの導
入・停止制御は、出口弁A13および出口弁B1
4を交互に開閉する。
Next, the outlet valve A13 is opened and the outlet valve B14 is closed, and the gas controlled at a predetermined flow rate by the flow rate control valve 12 is introduced into the reaction vessel 1 through the outlet valve A13. The subsequent control of introducing and stopping the gas into the reaction vessel 1 is performed using the outlet valve A13 and the outlet valve B1.
4 alternately open and close.

以上のように、出口弁B14、しぼり弁B15
および排気ポンプB16を用いてバイパス流路を
設け、出口弁A13および出口弁B14を交互に
開閉してガスの流路を切り換える構成を採用する
ことにより、流量制御器11の構造などの影響を
受けることなく、微少流量のガスの導入・停止制
御を高速応答性良好に行うことが可能となる。
As described above, the outlet valve B14 and the throttle valve B15
By adopting a configuration in which a bypass flow path is provided using the exhaust pump B16 and the outlet valve A13 and the outlet valve B14 are alternately opened and closed to switch the gas flow path, the structure of the flow rate controller 11 is not affected. This makes it possible to control the introduction and stop of gas at minute flow rates with good high-speed response.

〔実施例〕〔Example〕

次に、第1図および第2図を用いて本発明の1
実施例構成および動作を詳細に説明する。
Next, using FIG. 1 and FIG.
The configuration and operation of the embodiment will be explained in detail.

第1図において、反応容器1は、排気弁2を介
して排気ポンプA3によつて排気され、減圧状態
にある。ガスは、入口弁10、流量制御器11を
構成する流量制御弁12、および出口弁A13を
介して反応容器1に導入される。出口弁A13の
入口部分は、キヤリアガス導入弁20を介してキ
ヤリアガスが導入されると共に、出口弁B14お
よびしぼり弁B15を介して排気ポンプB16に
よつて所定圧力Pに排気される。これら出口弁B
14、しぼり弁B15および排気ポンプB16
は、バイパス流路を構成しており、出口弁A13
と出口弁B14とを交互に開閉することによつ
て、ガス流路を切り換えることができる。
In FIG. 1, a reaction vessel 1 is evacuated by an exhaust pump A3 through an exhaust valve 2 and is in a reduced pressure state. Gas is introduced into the reaction vessel 1 via the inlet valve 10, the flow control valve 12 constituting the flow controller 11, and the outlet valve A13. A carrier gas is introduced into the inlet portion of the outlet valve A13 via a carrier gas introduction valve 20, and is exhausted to a predetermined pressure P by an exhaust pump B16 via an outlet valve B14 and a throttle valve B15. These outlet valves B
14, Throttle valve B15 and exhaust pump B16
constitutes a bypass flow path, and the outlet valve A13
By alternately opening and closing the outlet valve B14 and the outlet valve B14, the gas flow path can be switched.

次に、第2図を用いて第1図図示構成の動作を
詳細に説明する。第2図図中横軸は時間を示し、
縦軸は流量制御弁12によつて導入されるガス流
量fを示す。図中およびの点線の曲線はガス
を反応容器1に導入するに先立つた前準備におけ
る導入特性を表し、図中ないしの実線の曲線
はガスを反応容器1に導入する導入停止特性を表
す。
Next, the operation of the configuration shown in FIG. 1 will be explained in detail using FIG. 2. The horizontal axis in Figure 2 shows time;
The vertical axis indicates the gas flow rate f introduced by the flow control valve 12. The dotted line curves and in the figure represent the introduction characteristics in the preparation before introducing the gas into the reaction vessel 1, and the solid line curves in the figure represent the introduction stop characteristics when introducing the gas into the reaction vessel 1.

図中は、出口弁B14を開、出口弁A13を
閉、キヤリアガス導入弁20を開、入口弁10を
開、および流量制御弁12を所定流量に設定し、
排気ポンプB16を用いて排気を開始する状態を
示す。尚、各弁などを開閉してから図示のように
排気されるまでには若干の遅延が存在するがここ
では説明の都合上、省略する。
In the figure, the outlet valve B14 is opened, the outlet valve A13 is closed, the carrier gas introduction valve 20 is opened, the inlet valve 10 is opened, and the flow rate control valve 12 is set to a predetermined flow rate.
A state in which exhaust is started using the exhaust pump B16 is shown. Note that there is a slight delay between opening and closing each valve and the like until the air is exhausted as shown in the figure, but this is omitted here for the sake of explanation.

図中は排気ポンプB16、しぼり弁B15、
および出口弁B14から構成されるバイパス流路
を介して各弁および配管内のガスが排気され、出
口弁A13の入口部分における圧力が所定値Pに
安定に設定された状態を示す。これは、出口弁A
13および出口弁B14を交互に切り換える態様
で開閉して流量制御弁12によつて流量制御され
たガスを反応容器1に導入したり、あるいはバイ
パス流路を介して排気したりする場合に、当該出
口弁A13の入口部分の圧力が変動しないように
するために、しぼり弁B15を調整して所定圧力
Pに設定することを意味している。詳述すれば、
出口弁A13、反応容器1、排気弁2、および排
気ポンプA3からなる流路によつて排気される当
該出口弁A13の入口部分の圧力Pと、出口弁B
14、しぼり弁B15、および排気ポンプB16
からなるバイパス流路によつて排気される当該出
口弁A13の入口部分の圧力Pとが等しくなるよ
うに例えばしぼり弁B15を調整することであ
り、この圧力Pは各弁、配管などのコンダクタン
ス、排気ポンプA,Bの排気特性などに依存して
決定される。図中Δiは、ガスを導入開始してから
所定流量のガスが出口弁A13の入口部分に安定
に導入されるまでの時間を表す。
In the figure, exhaust pump B16, throttle valve B15,
This shows a state in which the gas in each valve and the pipe is exhausted through a bypass flow path constituted by the outlet valve A14 and the outlet valve A14, and the pressure at the inlet of the outlet valve A13 is stably set to a predetermined value P. This is the outlet valve A
13 and outlet valve B14 are alternately opened and closed to introduce gas whose flow rate is controlled by the flow rate control valve 12 into the reaction vessel 1, or to exhaust the gas through the bypass channel. This means that the throttle valve B15 is adjusted and set to a predetermined pressure P in order to prevent the pressure at the inlet portion of the outlet valve A13 from fluctuating. In detail,
The pressure P at the inlet of the outlet valve A13, which is exhausted by the flow path consisting of the outlet valve A13, the reaction vessel 1, the exhaust valve 2, and the exhaust pump A3, and the outlet valve B
14, throttle valve B15, and exhaust pump B16
For example, the throttle valve B15 is adjusted so that the pressure P at the inlet of the outlet valve A13, which is exhausted by the bypass flow path consisting of It is determined depending on the exhaust characteristics of exhaust pumps A and B. In the figure, Δ i represents the time from the start of gas introduction until a predetermined flow rate of gas is stably introduced into the inlet portion of the outlet valve A13.

以上のようにして、出口弁A13の入口部分に
おける圧力Pが所定値に安定に保持され、流量制
御弁12によつて設定された所定流量のガスがバ
イパス流路(出口弁B14、しぼり弁B15およ
び排気ポンプB16)を介して排気され、出口弁
A13を開にしてガスを反応容器1に導入するた
めの前準備が完了したこととなる。
As described above, the pressure P at the inlet of the outlet valve A13 is stably maintained at a predetermined value, and a predetermined flow rate of gas set by the flow rate control valve 12 is supplied to the bypass flow path (outlet valve B14, throttle valve B15). The gas is then evacuated via the exhaust pump B16), and preparations for opening the outlet valve A13 and introducing the gas into the reaction vessel 1 are completed.

次に、ガスを反応容器1に導入する導入停止特
性を説明する。
Next, the characteristics of stopping the introduction of gas into the reaction vessel 1 will be explained.

第2図図中は、出口弁A13を開、出口弁B
14を閉にして、バイパス流路に流れていたガス
およびキヤリアガスを、出口弁A13、反応容器
1、排気弁2、および排気ポンプA3からなる流
路に切り換える状態を示す。
In Fig. 2, outlet valve A13 is opened and outlet valve B is opened.
14 is closed, and the gas and carrier gas flowing in the bypass flow path are switched to the flow path consisting of the outlet valve A13, the reaction vessel 1, the exhaust valve 2, and the exhaust pump A3.

図中は、安定状態の所定流量のガスを反応容
器1に導入する状態を示す。この安定状態の基で
ガスが反応容器1に導入されるまでに要する時間
Δt1は、従来の第5図図中の時間Δt1に比し、極
めて短くなつている。これは、本実施例は、出口
弁B14を通じて流れていたガスを、出口弁A1
3を通じて流れるように、ガス流路を単に切り換
えてガスを反応容器1に導入するよう制御してい
るために、ガスの導入の際の遅延、オーバーシユ
ーテイング、およびハンチングなど(図中イの部
分に示す点線の特性曲線など)を生じないように
しているからである。尚、図中Δt3は、ガスを反
応容器1に安定に導入している時間を表す。
The figure shows a state in which a predetermined flow rate of gas is introduced into the reaction vessel 1 in a stable state. The time Δt 1 required for gas to be introduced into the reaction vessel 1 under this stable state is extremely short compared to the conventional time Δt 1 shown in FIG. 5. This means that in this embodiment, the gas flowing through the outlet valve B14 is transferred to the outlet valve A1.
Since the gas is controlled to be introduced into the reaction vessel 1 by simply switching the gas flow path so that the gas flows through the reaction vessel 1, delays in gas introduction, overshooting, hunting, etc. (as shown in the figure) This is because the characteristic curve shown by the dotted line shown in the figure is prevented from occurring. Note that Δt 3 in the figure represents the time during which the gas is stably introduced into the reaction vessel 1.

図中は、出口弁A13を閉、および出口弁B
14を開にして、ガス流路をバイパス流路に切り
換えて、ガスを反応容器1に導入することを停止
する状態を示す。
In the figure, outlet valve A13 is closed and outlet valve B is closed.
14 is opened, the gas flow path is switched to the bypass flow path, and the introduction of gas into the reaction vessel 1 is stopped.

図中は、反応容器1に導入されるガス流量が
零になつた状態を示す。図中時間Δt2は、ガスの
導入停止を開始してからガスの導入が停止される
までの時間を示す。
The figure shows a state in which the flow rate of gas introduced into the reaction vessel 1 has become zero. In the figure, time Δt 2 indicates the time from when gas introduction is started to when gas introduction is stopped.

以上のように、出口弁A13および出口弁B1
4を交互に開閉して、出口弁A13の入口部分に
導入されたガスおよびキヤリアガスを、バイパス
流路と反応容器1を含む流路とに交互に切り換え
るよう制御することにより、微少流量のガスを減
圧された反応容器1中に安定状態の基で高速応答
性良好に導入・停止することが可能となる。
As described above, the outlet valve A13 and the outlet valve B1
4 is alternately opened and closed, and the gas and carrier gas introduced into the inlet of the outlet valve A13 are controlled to be alternately switched to the bypass flow path and the flow path containing the reaction vessel 1, thereby controlling a minute flow rate of gas. It becomes possible to introduce and stop the reaction in a stable state in the reduced pressure reaction vessel 1 with good high-speed response.

次に、第3図を用いて他の実施例構成および動
作を説明する。この第3図に示す構成は、第1図
に示す構成に付加して、出口弁A13の出口部分
に対して、しぼり弁A21を通じて所定流量のキ
ヤリアガスを導入したことである。他のガス導入
停止制御は第1図図示のものとほぼ同じであるの
で、説明を省略する。尚、出口弁A13の入口部
分における圧力P1を所定値に設定するのに、当
該しぼり弁A21を用いてキヤリアガスの導入量
を制御することによつて行つてもよいし、しぼり
弁B15と当該しぼり弁A21とを用いて行つて
もよい。
Next, the configuration and operation of another embodiment will be explained using FIG. The configuration shown in FIG. 3 is in addition to the configuration shown in FIG. 1 in that a predetermined flow rate of carrier gas is introduced into the outlet portion of the outlet valve A13 through the throttle valve A21. Other gas introduction and stop controls are almost the same as those shown in FIG. 1, so explanations will be omitted. The pressure P1 at the inlet of the outlet valve A13 may be set to a predetermined value by controlling the amount of carrier gas introduced using the throttle valve A21, or by controlling the amount of carrier gas introduced by the throttle valve B15 and the throttle valve B15. This may be done using the throttle valve A21.

このようにキヤリアガスを出口弁A13の出口
側に導入することにより、出口弁A13と反応容
器1との間の流路中のガス粒子の速度が増し、ガ
スを反応容器1に導入する応答性いわゆるレスポ
ンスが改善されると共に、たとえ出口弁A13が
閉状態にされても、しぼり弁A21を介してキヤ
リアガスが導入されるために、出口弁A13およ
び配管などに吸着したガスを当該キヤリアガスに
よつて迅速にパージすることが可能となる。
By introducing the carrier gas to the outlet side of the outlet valve A13 in this way, the velocity of gas particles in the flow path between the outlet valve A13 and the reaction vessel 1 is increased, and the responsiveness of introducing the gas into the reaction vessel 1 is increased. In addition to improving the response, even if the outlet valve A13 is closed, the carrier gas is introduced through the throttle valve A21, so the gas adsorbed on the outlet valve A13 and piping can be quickly removed by the carrier gas. It becomes possible to purge to

以上のことから、ガスを安定流量のもとで導入
するために要する時間Δt1およびガスの導入を停
止するために要する時間Δt2を更に短くすること
が可能となる。特に、出口弁A13と反応容器1
との間の配管長が長くなつた場合に有効なものと
なる。
From the above, it becomes possible to further shorten the time Δt 1 required to introduce the gas at a stable flow rate and the time Δt 2 required to stop the introduction of the gas. In particular, the outlet valve A13 and the reaction vessel 1
This is effective when the length of piping between the

尚、第1図および第3図図中、排気ポンプA3
および排気ポンプB16の2台を用いて排気する
よう構成したけれども、排気ポンプB16を省略
し、排気ポンプA3を用いて排気弁2と出口弁B
14とを切り換えて制御してもよい。また、本実
施例においてガスとして例えば六フツカタングス
テンガスを用い、キヤリアガスとして例えばヘリ
ウムガスのような不活性ガスを用いている。
In addition, in Fig. 1 and Fig. 3, exhaust pump A3
and exhaust pump B16, but the exhaust pump B16 is omitted and exhaust valve 2 and outlet valve B are used instead of exhaust pump A3.
14 may be switched for control. Further, in this embodiment, for example, hexagonal tungsten gas is used as the gas, and an inert gas such as helium gas is used as the carrier gas.

〔発明の効果〕〔Effect of the invention〕

以上説明したように、本発明によれば、出口弁
A13の入口部分の圧力Pを所定値にし、出口弁
A13と出口弁B14とを交互に開閉してガス流
路を切り換えることによつて、ガスを反応容器1
に導入するよう制御しているため、流量制御器1
1の構造・特性に影響されることなく、微少流量
のガスを反応容器1中に高速応答性良好に導入・
停止することができる。
As explained above, according to the present invention, by setting the pressure P at the inlet of the outlet valve A13 to a predetermined value and switching the gas flow path by alternately opening and closing the outlet valve A13 and the outlet valve B14, Gas to reaction vessel 1
Since the flow rate controller 1 is controlled to be introduced into
A small flow rate of gas can be introduced into the reaction vessel 1 with good high-speed response without being affected by the structure and characteristics of the reaction vessel 1.
Can be stopped.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明の1実施例構成図、第2図は第
1図図示構成の動作説明図、第3図は本実施例の
他の実施例構成図、第4図は従来の導入方法の構
成図、第5図は第4図図示構成の動作説明図を示
す。 図中、1は反応容器、2は排気弁、3,16は
排気ポンプ、10は入口弁、11は流量制御器、
12は流量制御弁、13,14…出口弁、15,
21はしぼり弁、20…キヤリアガス導入弁を表
す。
Fig. 1 is a block diagram of one embodiment of the present invention, Fig. 2 is an explanatory diagram of the operation of the configuration shown in Fig. 1, Fig. 3 is a block diagram of another embodiment of the present invention, and Fig. 4 is a conventional introduction method. FIG. 5 is an explanatory diagram of the operation of the configuration shown in FIG. 4. In the figure, 1 is a reaction vessel, 2 is an exhaust valve, 3 and 16 are exhaust pumps, 10 is an inlet valve, 11 is a flow rate controller,
12 is a flow control valve, 13, 14...outlet valve, 15,
21 represents a throttle valve, and 20 represents a carrier gas introduction valve.

Claims (1)

【特許請求の範囲】 1 所定流量のガスを減圧された反応容器に導入
するガス導入方法において、 導入しようとするガスの流量を制御する流量制
御器と、 この流量制御器によつて流量制御されたガスを
減圧された反応容器に導入する出口弁Aと、 キヤリアガスを流量制御器と出口弁Aとの接続
部分に導入するキヤリアガス導入弁と、 流量制御器と出口弁Aとの接続部分に導入され
たガスおよびキヤリアガスを排気する出口弁B
と、 この出口弁Bを通して排気される排気流量を制
御するしぼり弁Bとを設け、 ガスを反応容器に導入する際に、第1に、出口
弁Aを閉および出口弁Bを少なくとも開にして、
流量制御器から導入されるガスを出口弁Bおよび
しぼり弁Bを用いて排気すると共に出口弁Aの入
口における圧力を所定値にし、第2に、出口弁A
を開および出口弁Bを閉にして、ガスを反応容器
に導入するように制御することを特徴とするガス
導入方法。
[Claims] 1. A gas introduction method for introducing a predetermined flow rate of gas into a reduced pressure reaction vessel, comprising: a flow rate controller that controls the flow rate of the gas to be introduced; and a flow rate controlled by the flow rate controller. An outlet valve A that introduces the carrier gas into the depressurized reaction vessel, a carrier gas introduction valve that introduces the carrier gas into the connection between the flow rate controller and the outlet valve A, and a carrier gas introduction valve that introduces the carrier gas into the connection between the flow rate controller and the outlet valve A. Outlet valve B for exhausting gas and carrier gas
and a throttle valve B for controlling the flow rate of the exhaust gas exhausted through this outlet valve B, and when introducing gas into the reaction vessel, first, the outlet valve A is closed and the outlet valve B is at least opened. ,
The gas introduced from the flow rate controller is exhausted using the outlet valve B and the throttle valve B, and the pressure at the inlet of the outlet valve A is set to a predetermined value.
A gas introduction method characterized in that the gas is controlled to be introduced into a reaction vessel by opening an outlet valve B and closing an outlet valve B.
JP17299786A 1986-07-23 1986-07-23 Method for introducing gas Granted JPS6328875A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17299786A JPS6328875A (en) 1986-07-23 1986-07-23 Method for introducing gas

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17299786A JPS6328875A (en) 1986-07-23 1986-07-23 Method for introducing gas

Publications (2)

Publication Number Publication Date
JPS6328875A JPS6328875A (en) 1988-02-06
JPH0118152B2 true JPH0118152B2 (en) 1989-04-04

Family

ID=15952269

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17299786A Granted JPS6328875A (en) 1986-07-23 1986-07-23 Method for introducing gas

Country Status (1)

Country Link
JP (1) JPS6328875A (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0663095B2 (en) * 1988-10-13 1994-08-17 日電アネルバ株式会社 CVD equipment
JP3142329B2 (en) * 1991-11-20 2001-03-07 株式会社東芝 Thin film manufacturing equipment
KR20030004740A (en) * 2001-07-06 2003-01-15 주성엔지니어링(주) Liquid reagent delivery system and process method using the same
US7691167B2 (en) 2003-09-29 2010-04-06 Hitachi Metals, Ltd. Ceramic honeycomb filter, its production method, and plugging material for ceramic honeycomb filter
KR101419291B1 (en) 2006-09-29 2014-07-14 히타치 긴조쿠 가부시키가이샤 Process for producing cordierite ceramic honeycomb filter
CN105659177B (en) * 2013-10-31 2018-07-10 株式会社富士金 Pressure flow-rate controller
JP6321972B2 (en) * 2014-01-21 2018-05-09 株式会社フジキン Pressure flow control device and overshoot prevention method at the start of the flow control
JP6717196B2 (en) 2014-09-30 2020-07-01 日立金属株式会社 Ceramic honeycomb filter and manufacturing method thereof

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5513922A (en) * 1978-07-14 1980-01-31 Matsushita Electric Ind Co Ltd Vapor phase growthing method and its device

Also Published As

Publication number Publication date
JPS6328875A (en) 1988-02-06

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