JPH0521984B2 - - Google Patents

Info

Publication number
JPH0521984B2
JPH0521984B2 JP59022807A JP2280784A JPH0521984B2 JP H0521984 B2 JPH0521984 B2 JP H0521984B2 JP 59022807 A JP59022807 A JP 59022807A JP 2280784 A JP2280784 A JP 2280784A JP H0521984 B2 JPH0521984 B2 JP H0521984B2
Authority
JP
Japan
Prior art keywords
stop valve
vacuum processing
gas supply
gas
mfc
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59022807A
Other languages
Japanese (ja)
Other versions
JPS60169138A (en
Inventor
Yoshe Tanaka
Masaharu Saikai
Yoshifumi Ogawa
Kazunori Tsujimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP59022807A priority Critical patent/JPS60169138A/en
Publication of JPS60169138A publication Critical patent/JPS60169138A/en
Publication of JPH0521984B2 publication Critical patent/JPH0521984B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00Etching of wafers, substrates or parts of devices

Landscapes

  • Drying Of Semiconductors (AREA)
  • Feeding, Discharge, Calcimining, Fusing, And Gas-Generation Devices (AREA)
  • Chemical Vapour Deposition (AREA)
  • ing And Chemical Polishing (AREA)

Description

【発明の詳細な説明】 〔発明の利用分野〕 本発明は、真空処理装置に係り、特に内部で被
処理物をプラズマを利用して処理する真空処理装
置に関するものである。
DETAILED DESCRIPTION OF THE INVENTION [Field of Application of the Invention] The present invention relates to a vacuum processing apparatus, and particularly to a vacuum processing apparatus that processes a workpiece internally using plasma.

〔発明の背景〕[Background of the invention]

真空処理室内で被処理物をプラズマを利用して
処理する、例えば、プラズマエツチング装置,プ
ラズマCVD装置等の真空処理装置は、ガス供給
装置と真空処理室とを連結するガス供給管にガス
流量制御手段があるオリフイスを有するコントロ
ーラ、つまり、質量流量制御器(以下、MFCと
略)とストツプバルブとが配設されたガス供給系
と、MFCとストツプバルブとの動作を制御する
制御装置とを一般に具備している。
Vacuum processing equipment, such as plasma etching equipment and plasma CVD equipment, which processes objects to be processed using plasma in a vacuum processing chamber, uses gas flow rate control in the gas supply pipe that connects the gas supply equipment and the vacuum processing chamber. A controller having an orifice with means, that is, a gas supply system in which a mass flow controller (hereinafter abbreviated as MFC) and a stop valve are arranged, and a control device for controlling the operation of the MFC and the stop valve are generally provided. ing.

このような真空処理装置では、真空処理室での
被処理物の処理完了後、MFCの前流側並びに後
流側に配設されたストツプバルブが同時に閉止さ
れ真空処理室は所定圧力に減圧排気される。真空
処理室からの処理済みの被処理物の排出及び真空
処理室への新たな被処理物の搬入,設置完了後、
全てのストツプバルブが開放され真空処理室には
ガスが再び供給される。
In such a vacuum processing apparatus, after the processing of the workpiece in the vacuum processing chamber is completed, the stop valves installed on the upstream and downstream sides of the MFC are simultaneously closed, and the vacuum processing chamber is evacuated to a predetermined pressure. Ru. After discharging the processed materials from the vacuum processing chamber, transporting new materials to the vacuum processing chamber, and completing the installation,
All stop valves are opened and gas is again supplied to the vacuum processing chamber.

このような真空処理装置では、MFCのオリフ
イスでのリークガスやMFCのオリフイスの制御
遅延によりMFCのオリフイスとMFCの前流側の
ストツプバルブとの間に留つていたガスがMFC
とMFCの後流側のストツプバルブとの間に漏洩
し、その間の圧力は処理時の圧力の数倍に達す
る。従つて、真空処理室へのガスの再供給時に
MFCの後流側のストツプバルブを開放すれば真
空処理室にはガスが突出し、これによりストツプ
バルブやガス供給管内の異物を飛散させ被処理物
に付着するため、被処理物の処理品質が低下する
といつた欠点があつた。
In such vacuum processing equipment, gas that has remained between the MFC orifice and the stop valve on the upstream side of the MFC due to leak gas at the MFC orifice or a delay in the control of the MFC orifice is removed from the MFC.
There is a leak between the stop valve and the stop valve on the downstream side of the MFC, and the pressure between them reaches several times the pressure during processing. Therefore, when resupplying gas to the vacuum processing chamber,
When the stop valve on the downstream side of the MFC is opened, gas will protrude into the vacuum processing chamber, causing foreign matter in the stop valve and gas supply pipe to scatter and adhere to the object to be processed. There were some shortcomings.

〔発明の目的〕[Purpose of the invention]

本発明の目的は、ガス供給系のガス供給管内の
ガスによる異物の飛散を防止して異物の被処理物
への付着を抑制することで、被処理物の処理品質
の低下を防止できる真空処理装置を提供すること
にある。
The purpose of the present invention is to provide vacuum processing that can prevent deterioration in the processing quality of the processed object by preventing the scattering of foreign objects caused by the gas in the gas supply pipe of the gas supply system and suppressing the adhesion of foreign objects to the processed object. The goal is to provide equipment.

〔発明の概要〕[Summary of the invention]

本発明は、内部で被処理物が処理される真空処
理室と、真空排気手段と、前記真空処理室に連結
されたガス供給管と、該ガス供給管の途中に上流
側から順次配設された第1のストツプバルブ,第
2のストツプバルブ,第3のストツプバルブと、
前記第1のストツプバルブと前記第2のストツプ
バルブとの間の前記ガス供給管に配設したガス流
量制御手段と、該ガス流量制御手段と前記第2の
ストツプバルブとの間の前記ガス供給管と前記真
空排気手段とを接続する排気管と、該排気管に配
設した第4のストツプバルブと、前記第1のスト
ツプバルブ,第2のストツプバルブ,第3のスト
ツプバルブ,第4のストツプバルブの開閉、前記
ガス流量制御手段の閉及び開度を指令する制御装
置と、から真空処理装置を構成したことを特徴と
する。
The present invention provides a vacuum processing chamber in which a workpiece is processed, a vacuum evacuation means, a gas supply pipe connected to the vacuum processing chamber, and a vacuum processing chamber disposed in the middle of the gas supply pipe in order from the upstream side. a first stop valve, a second stop valve, a third stop valve,
a gas flow control means disposed in the gas supply pipe between the first stop valve and the second stop valve; a gas flow control means disposed in the gas supply pipe between the gas flow control means and the second stop valve; an exhaust pipe connecting the evacuation means, a fourth stop valve disposed on the exhaust pipe, opening/closing of the first stop valve, second stop valve, third stop valve, and fourth stop valve, and the gas flow rate. The present invention is characterized in that the vacuum processing apparatus is comprised of a control device for instructing the closing and opening degrees of the control means;

〔発明の実施例〕[Embodiments of the invention]

本発明の一実施例を第1図により説明する。 An embodiment of the present invention will be described with reference to FIG.

ガス供給系10は、ガス供給装置20と真空処
理室30とを連結するガス供給管11と、ガス供
給管11に配設されたMFC12とストツプバル
ブ13〜15とで構成され、MFC12とストツ
プバルブ13〜15の動作は制御装置40で制御
される。MFC12の前流側にはストツプバルブ
13が後流側にはストツプバルブ14が設けら
れ、ストツプバルブ14の後流側にはストツプバ
ルブ15が設けられている。
The gas supply system 10 includes a gas supply pipe 11 that connects the gas supply device 20 and the vacuum processing chamber 30, an MFC 12 disposed in the gas supply pipe 11, and stop valves 13 to 15. 15 is controlled by a control device 40. A stop valve 13 is provided on the upstream side of the MFC 12, a stop valve 14 is provided on the downstream side, and a stop valve 15 is provided on the downstream side of the stop valve 14.

さらに、ストツプバルブ14,15間のガス供
給管11にストツプバルブ16が設けられた排気
管50の一端が連結されている。排気管50の他
端は、例えば、真空処理室30を真空排気する排
気装置(図示省略)に連結されている。
Further, one end of an exhaust pipe 50 provided with a stop valve 16 is connected to the gas supply pipe 11 between the stop valves 14 and 15. The other end of the exhaust pipe 50 is connected to, for example, an exhaust device (not shown) that evacuates the vacuum processing chamber 30.

かかる構成において、真空処理室30での被処
理物(図示省略)の処理完了後、ストツプバルブ
13,15を閉止、ストツプバルブ16を開放す
ると共に制御装置40によりMFC12のオリフ
イスを完閉とする指令を出す。制御装置40は
MFC12から完閉になつた信号を受け取つた後
にストツプバルブ14,16を閉止する。この
間、MFC12とストツプバルブ15間は排気管
50を介して排気装置により真空排気されると共
に、真空処理室30では残留ガスの排気と被処理
物の交換が行われる。
In this configuration, after the processing of the workpiece (not shown) in the vacuum processing chamber 30 is completed, the stop valves 13 and 15 are closed, the stop valve 16 is opened, and the control device 40 issues a command to completely close the orifice of the MFC 12. . The control device 40
After receiving a signal from the MFC 12 that the valves are completely closed, the stop valves 14 and 16 are closed. During this time, the space between the MFC 12 and the stop valve 15 is evacuated by an exhaust device through the exhaust pipe 50, and the residual gas is exhausted and the objects to be processed are exchanged in the vacuum processing chamber 30.

真空処理室30へのガスの再供給の方法はスト
ツプバルブ14,15を開放し、その後、ストツ
プバルブ13を開放する。MFC12に対して再
び制御装置40により必要流量までガスを流通さ
せるようにオリフイス開度指令のための信号が出
され、ガスは真空処理室30へゆるやかに供給さ
れる。
To resupply gas to the vacuum processing chamber 30, the stop valves 14 and 15 are opened, and then the stop valve 13 is opened. The control device 40 again issues a signal to the MFC 12 to command the orifice opening so that the gas flows up to the required flow rate, and the gas is slowly supplied to the vacuum processing chamber 30.

本実施例のような真空処理室30へのガス供給
方法では、真空処理室30へのガス供給時にガス
の突出を防止してガス供給系のストツプバルブ1
4,15やガス供給管11内のガスによる異物の
飛散を防止できるため、異物の被処理物への付着
を抑制でき被処理物の処理品質の低下を防止でき
る。
In the method of supplying gas to the vacuum processing chamber 30 as in this embodiment, when gas is supplied to the vacuum processing chamber 30, the gas is prevented from protruding and the stop valve 1 of the gas supply system is closed.
4, 15 and the gas in the gas supply pipe 11, it is possible to prevent foreign matter from adhering to the object to be processed and to prevent deterioration in the processing quality of the object to be processed.

また、MFC12の後流側のガス供給管11を
真空処理室を介さないで真空排気できるため、真
空処理装置のスループツトを向上できる。
Further, since the gas supply pipe 11 on the downstream side of the MFC 12 can be evacuated without passing through the vacuum processing chamber, the throughput of the vacuum processing apparatus can be improved.

尚、上記した実施例で、MFC12のオリフイ
スでのリーク景が多くMFC12出口側にガスが
流入する場合には、真空処理室30での被処理物
の処理完了後、MFC12の前流側のストツプバ
ルブ13とMFC12の後流側のストツプバルブ
14の更に後流側のストツプバルブ15とを閉止
し排気管のストツプバルブ16を開放すると同時
に、制御装置からMFCのオリフイスを全開する
よう指令を出すようにすれば良い。
In the above embodiment, if there is a large amount of leakage at the orifice of the MFC 12 and gas flows into the outlet side of the MFC 12, the stop valve on the upstream side of the MFC 12 should be 13, the stop valve 14 on the downstream side of the MFC 12, and the stop valve 15 on the downstream side are closed, and the stop valve 16 in the exhaust pipe is opened, and at the same time, the control device issues a command to fully open the orifice of the MFC. .

更に、MFC12が少量の流量制御用である場
合には、排気管の排気に時間を要するため、ガス
供給管11にMFC12をバイパスするバイパス
管を連結すると共に該管にストツプバルブを設け
て排気時間を短縮し被処理物の交換時間内に
MFCの前流側のストツプバルブの後流側を真空
排気できるようにしても良い。
Furthermore, when the MFC 12 is used to control a small amount of flow rate, it takes time to exhaust the exhaust pipe, so a bypass pipe that bypasses the MFC 12 is connected to the gas supply pipe 11, and a stop valve is provided in the pipe to shorten the exhaust time. Shorten the time required to change the workpiece.
The downstream side of the stop valve on the upstream side of the MFC may be evacuated.

〔発明の効果〕〔Effect of the invention〕

本発明は、以上説明したように、真空処理室へ
のガスの供給停止後でガスの供給開始以前に
MFCの後流側のガス供給管を真空排気するので、
真空処理室へのガス供給時にガスの突出を防止し
てガス供給系のガス供給管内のガスによる異物の
飛散を防止でき、異物の被処理物への付着を抑制
でき被処理物の処理品質ものである。さらに、ガ
ス供給管の真空排気を真空処理装置を介さないで
行うことができ、真空処理装置のスループツトが
向上するものである。
As explained above, in the present invention, after the gas supply to the vacuum processing chamber is stopped and before the gas supply is started,
Since the gas supply pipe on the downstream side of the MFC is evacuated,
When gas is supplied to the vacuum processing chamber, it prevents the gas from protruding and prevents foreign matter from scattering due to the gas in the gas supply pipe of the gas supply system.It also prevents foreign matter from adhering to the workpiece and improves the processing quality of the workpiece. It is. Furthermore, the gas supply pipe can be evacuated without going through the vacuum processing apparatus, and the throughput of the vacuum processing apparatus is improved.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の一実施例の真空処理装置の構
成を示すブロツク図である。 10……ガス供給系、11……ガス供給管、1
2……MFC、13,14,15,16…ストツ
プバルブ、20……ガス供給装置、30……真空
処理装置、40……制御装置、50……排気管。
FIG. 1 is a block diagram showing the configuration of a vacuum processing apparatus according to an embodiment of the present invention. 10...Gas supply system, 11...Gas supply pipe, 1
2...MFC, 13, 14, 15, 16...stop valve, 20...gas supply device, 30...vacuum processing device, 40...control device, 50...exhaust pipe.

Claims (1)

【特許請求の範囲】[Claims] 1 内部で被処理物が処理される真空処理室と、
真空排気手段と、前記真空処理室に連結されたガ
ス供給管と、該ガス供給管の途中に上流側から順
次配設された第1のストツプバルブ,第2のスト
ツプバルブ,第3のストツプバルブと、前記第1
のストツプバルブと前記第2のストツプバルブと
の間の前記ガス供給管に配設したガス流量制御手
段と、該ガス流量制御手段と前記第2のストツプ
バルブとの間の前記ガス供給管と前記真空排気手
段とを接続する排気管と、該排気管に配設した第
4のストツプバルブと、前記第1のストツプバル
ブ,第2のストツプバルブ,第3のストツプバル
ブ,第4のストツプバルブの開閉、前記ガス流量
制御手段の閉及び開度を指令する制御装置と、か
らなる真空処理装置。
1 a vacuum processing chamber in which the object to be processed is processed;
evacuation means, a gas supply pipe connected to the vacuum processing chamber, a first stop valve, a second stop valve, and a third stop valve disposed in the middle of the gas supply pipe in order from the upstream side; 1st
a gas flow rate control means disposed in the gas supply pipe between the stop valve and the second stop valve; and a gas supply pipe and evacuation means between the gas flow rate control means and the second stop valve. an exhaust pipe connecting the exhaust pipe, a fourth stop valve disposed in the exhaust pipe, opening and closing of the first stop valve, second stop valve, third stop valve, and fourth stop valve, and of the gas flow rate control means. A vacuum processing device consisting of a control device that commands closing and opening degrees.
JP59022807A 1984-02-13 1984-02-13 Method of supplying gas to vacuum treating chamber Granted JPS60169138A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59022807A JPS60169138A (en) 1984-02-13 1984-02-13 Method of supplying gas to vacuum treating chamber

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59022807A JPS60169138A (en) 1984-02-13 1984-02-13 Method of supplying gas to vacuum treating chamber

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP6086159A Division JP2646998B2 (en) 1994-04-25 1994-04-25 Vacuum processing method

Publications (2)

Publication Number Publication Date
JPS60169138A JPS60169138A (en) 1985-09-02
JPH0521984B2 true JPH0521984B2 (en) 1993-03-26

Family

ID=12092958

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59022807A Granted JPS60169138A (en) 1984-02-13 1984-02-13 Method of supplying gas to vacuum treating chamber

Country Status (1)

Country Link
JP (1) JPS60169138A (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2715134B2 (en) * 1989-02-17 1998-02-18 東京エレクトロン株式会社 Processing method
JPH04180567A (en) * 1990-11-15 1992-06-26 Nec Kyushu Ltd Gaseous material supply system of apparatus for producing semiconductor
KR20020074708A (en) * 2001-03-21 2002-10-04 삼성전자 주식회사 Method for Increase of Gas Flow
CN215560801U (en) * 2021-06-23 2022-01-18 上海晶盟硅材料有限公司 Epitaxial dopant gas dilution device

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5812342B2 (en) * 1981-03-31 1983-03-08 富士通株式会社 Continuous dry etching method

Also Published As

Publication number Publication date
JPS60169138A (en) 1985-09-02

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