JPH01187902A - Thin film resistor - Google Patents
Thin film resistorInfo
- Publication number
- JPH01187902A JPH01187902A JP63012967A JP1296788A JPH01187902A JP H01187902 A JPH01187902 A JP H01187902A JP 63012967 A JP63012967 A JP 63012967A JP 1296788 A JP1296788 A JP 1296788A JP H01187902 A JPH01187902 A JP H01187902A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- land
- trimming
- film resistor
- resistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 34
- 238000009966 trimming Methods 0.000 claims abstract description 29
- 238000007796 conventional method Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Landscapes
- Apparatuses And Processes For Manufacturing Resistors (AREA)
- Non-Adjustable Resistors (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、基板上に形成された薄膜抵抗体のトリミング
構造に関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a trimming structure for a thin film resistor formed on a substrate.
従来の技術
近年、A/D、D/Aコンバータなどがよく利用される
ようになり、抵抗相互間の相対精度をあげるために半導
体基板上に形成された薄膜抵抗体をレーザービームを用
いてトリミングする方法が用いられるようになってきた
。Conventional technology In recent years, A/D and D/A converters have come into widespread use, and in order to improve the relative accuracy between resistors, thin film resistors formed on semiconductor substrates are trimmed using laser beams. This method has come to be used.
以下に第2図の概念的平面図により、従来の薄膜抵抗体
のトリミング方法と、トリミング後の薄膜抵抗体の形状
を示す。5は薄膜抵抗体、6は電極配線層、7は電流源
、8は電圧計である。以下、従来の方法の手順を説明す
る。The conventional method of trimming a thin film resistor and the shape of the thin film resistor after trimming will be described below with reference to the conceptual plan view of FIG. 5 is a thin film resistor, 6 is an electrode wiring layer, 7 is a current source, and 8 is a voltmeter. Below, the steps of the conventional method will be explained.
まず、薄膜抵抗体の一部に接着される電極配線層に接続
した定電流源7で薄膜抵抗体5内に一定電流を供給し続
けながら、初期の薄膜抵抗体両端にかかる電圧を測定す
る。次に、定電流源の電流は一定のままで電圧計の目盛
を見ながら、レーザービームを用いて薄膜抵抗体のトリ
ミングランドの電極層に最も近い端を電流と水平に切り
こみを入れてゆ(。電圧計の目盛が求める値になったら
、レーザービームによるトリミングを終了する。First, while continuing to supply a constant current into the thin film resistor 5 with a constant current source 7 connected to an electrode wiring layer bonded to a part of the thin film resistor, the voltage applied across the initial thin film resistor is measured. Next, while keeping the current of the constant current source constant and looking at the scale of the voltmeter, use a laser beam to cut the end of the trimming land of the thin film resistor closest to the electrode layer parallel to the current. .When the voltmeter scale reaches the desired value, finish trimming with the laser beam.
発明が解決しようとする課題
しかしながら上記従来の方法では、第2図に示すように
、薄膜抵抗体の切りこみを電流の方向と水平に入れてゆ
くために、レーザービームで照射しただけで抵抗値が大
きく変わり、求めたい電圧値より大幅に小さい値でレー
ザービームによるトリミングを終了しなければならない
という問題点を有していた。Problems to be Solved by the Invention However, in the conventional method described above, as shown in Figure 2, in order to make cuts in the thin film resistor parallel to the direction of the current, the resistance value can be changed simply by irradiating it with a laser beam. There is a problem in that trimming by the laser beam must be completed at a voltage value that is significantly smaller than the desired voltage value.
本発明は、上記従来の問題点を解決するもので、薄膜抵
抗体の抵抗値を少しづつ変えることが可能なトリミング
構造を提供することを目的とする。The present invention solves the above-mentioned conventional problems, and aims to provide a trimming structure that can gradually change the resistance value of a thin film resistor.
課題を解決するための手段
この目的を達成するために本発明は、前記薄膜抵抗体の
トリミングランドの電極配線層に最も近い端から前記薄
膜抵抗体のトリミングランドを斜めに切る方向にトリミ
ングした構成である。Means for Solving the Problems To achieve this object, the present invention provides a structure in which the trimming land of the thin film resistor is trimmed diagonally from the end of the trimming land of the thin film resistor that is closest to the electrode wiring layer. It is.
作用
この発明によって、精度の良いトリミングを短時間で行
なうことができる。Effect: According to the present invention, accurate trimming can be performed in a short time.
実施例
以下本発明の一実施例について、図面を参照しながら説
明する。EXAMPLE An example of the present invention will be described below with reference to the drawings.
第1図は、本発明の一実施例における、レーザービーム
を用いた薄膜抵抗体のトリミング構造を示す概念的平面
図である。第1図において、1は薄膜抵抗体、2は電極
配線層、3は電流源、4は電圧計である。FIG. 1 is a conceptual plan view showing a trimming structure of a thin film resistor using a laser beam in one embodiment of the present invention. In FIG. 1, 1 is a thin film resistor, 2 is an electrode wiring layer, 3 is a current source, and 4 is a voltmeter.
次に、本実施例の薄膜抵抗体のトリミング方法について
以下その手順を説明する。まず、薄膜抵抗体1の一部に
接着される電極配線層2に接続した定電流源3から薄膜
抵抗体1に一定電流を供給し続けながら、初期の薄膜抵
抗体1の両端にかかる電圧を測定する。次に、定電流源
の電流は一定のままで電圧計をみながら、レーザービー
ムを用いて薄膜抵抗体1のトリミングランド11に切り
こみを入れてゆ(。その際、薄膜抵抗体1のトリミング
ランド11の電極配線層2に最も近い端から、電流の方
向に対して斜めに切る方向に切りこみを入れてゆ(。こ
の方向で切りこみを入れてゆくと、薄膜抵抗体の抵抗値
の変化の割合は、切りこみの距離に正比例する。Next, the procedure for trimming the thin film resistor of this embodiment will be explained below. First, while continuing to supply a constant current to the thin film resistor 1 from the constant current source 3 connected to the electrode wiring layer 2 bonded to a part of the thin film resistor 1, the initial voltage applied to both ends of the thin film resistor 1 is adjusted. Measure. Next, while keeping the current of the constant current source constant and watching the voltmeter, cut into the trimming land 11 of the thin film resistor 1 using a laser beam. Starting from the end closest to the electrode wiring layer 2 of No. 11, make a cut in a direction diagonal to the direction of current flow. is directly proportional to the distance of the notch.
電圧計の目盛が求める値になったら、レーザービームに
よるトリミングを終了する。When the voltmeter scale reaches the desired value, trimming with the laser beam is finished.
発明の効果
以上のように本発明によると、薄膜抵抗体をトリミング
する際に、前記薄膜抵抗体のトリミングランドの電極配
線層に最も近い端から、前記薄膜抵抗体のトリミングラ
ンドを斜めに切る方向でトリミングすることで、精度の
よいトリミングを短時間で実現できる。Effects of the Invention As described above, according to the present invention, when trimming a thin film resistor, the direction in which the trimming land of the thin film resistor is cut diagonally from the end of the trimming land of the thin film resistor that is closest to the electrode wiring layer. By trimming with , you can achieve accurate trimming in a short time.
第1図は本発明の実施例における薄膜抵抗体のトリミン
グ構造を示す概念的平面図、第2図は従来例の薄膜抵抗
体のトリミング構造の概念的平面図である。
1.5・・・・・・薄膜抵抗体、2,6・・・・・・電
極配線層、3,7・・・・・・定電流源、4,8・・・
・・・電圧計、11・・・・・・トリミングランド。
代理人の氏名 弁理士 中尾敏男 ほか1名1−を膜a
!、vL体
2−を極配置tIL/%
3−m一定電流源
第2図FIG. 1 is a conceptual plan view showing a trimming structure of a thin film resistor in an embodiment of the present invention, and FIG. 2 is a conceptual plan view of a trimming structure of a conventional thin film resistor. 1.5... thin film resistor, 2,6... electrode wiring layer, 3,7... constant current source, 4,8...
...Voltmeter, 11...Trimming land. Name of agent: Patent attorney Toshio Nakao and 1 other person
! , vL body 2- with pole arrangement tIL/% 3-m constant current source Fig. 2
Claims (1)
一部に接着される電極配線層とをそなえ、前記薄膜抵抗
体のトリミングランドの電極配線層に最も近い端から前
記薄膜抵抗体のトリミングランドを斜めに切る方向でト
リミングしたことを特徴とする薄膜抵抗体。A thin film resistor having a trimming land and an electrode wiring layer bonded to a part of the thin film resistor are provided, and the trimming land of the thin film resistor is connected from the end of the trimming land of the thin film resistor closest to the electrode wiring layer. A thin film resistor characterized by being trimmed in a diagonal direction.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63012967A JPH01187902A (en) | 1988-01-22 | 1988-01-22 | Thin film resistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63012967A JPH01187902A (en) | 1988-01-22 | 1988-01-22 | Thin film resistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01187902A true JPH01187902A (en) | 1989-07-27 |
Family
ID=11820013
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63012967A Pending JPH01187902A (en) | 1988-01-22 | 1988-01-22 | Thin film resistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01187902A (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5355763A (en) * | 1976-11-01 | 1978-05-20 | Matsushita Electric Industrial Co Ltd | Thinnfilm resistor |
| JPS56138902A (en) * | 1980-03-31 | 1981-10-29 | Fujitsu Ltd | Method of trimming thin film resistor |
-
1988
- 1988-01-22 JP JP63012967A patent/JPH01187902A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5355763A (en) * | 1976-11-01 | 1978-05-20 | Matsushita Electric Industrial Co Ltd | Thinnfilm resistor |
| JPS56138902A (en) * | 1980-03-31 | 1981-10-29 | Fujitsu Ltd | Method of trimming thin film resistor |
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