JPH01192099A - 不揮発性半導体記憶装置 - Google Patents

不揮発性半導体記憶装置

Info

Publication number
JPH01192099A
JPH01192099A JP63017787A JP1778788A JPH01192099A JP H01192099 A JPH01192099 A JP H01192099A JP 63017787 A JP63017787 A JP 63017787A JP 1778788 A JP1778788 A JP 1778788A JP H01192099 A JPH01192099 A JP H01192099A
Authority
JP
Japan
Prior art keywords
control signal
high voltage
memory device
voltage
semiconductor memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP63017787A
Other languages
English (en)
Japanese (ja)
Inventor
Takeshi Nakayama
武志 中山
Yasushi Terada
寺田　康
Kazuo Kobayashi
和男 小林
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP63017787A priority Critical patent/JPH01192099A/ja
Priority to IDP276589A priority patent/ID809B/id
Publication of JPH01192099A publication Critical patent/JPH01192099A/ja
Pending legal-status Critical Current

Links

Landscapes

  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Read Only Memory (AREA)
  • Non-Volatile Memory (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP63017787A 1988-01-27 1988-01-27 不揮発性半導体記憶装置 Pending JPH01192099A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP63017787A JPH01192099A (ja) 1988-01-27 1988-01-27 不揮発性半導体記憶装置
IDP276589A ID809B (id) 1988-01-27 1989-02-10 Punca tarik untuk slider ritsleting

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63017787A JPH01192099A (ja) 1988-01-27 1988-01-27 不揮発性半導体記憶装置

Publications (1)

Publication Number Publication Date
JPH01192099A true JPH01192099A (ja) 1989-08-02

Family

ID=11953426

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63017787A Pending JPH01192099A (ja) 1988-01-27 1988-01-27 不揮発性半導体記憶装置

Country Status (2)

Country Link
JP (1) JPH01192099A (id)
ID (1) ID809B (id)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5831918A (en) * 1994-02-14 1998-11-03 Micron Technology, Inc. Circuit and method for varying a period of an internal control signal during a test mode
US5991214A (en) * 1996-06-14 1999-11-23 Micron Technology, Inc. Circuit and method for varying a period of an internal control signal during a test mode
US6448702B1 (en) 1999-09-28 2002-09-10 Nec Corporation Cathode ray tube with internal magnetic shield
US6587978B1 (en) * 1994-02-14 2003-07-01 Micron Technology, Inc. Circuit and method for varying a pulse width of an internal control signal during a test mode

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5831918A (en) * 1994-02-14 1998-11-03 Micron Technology, Inc. Circuit and method for varying a period of an internal control signal during a test mode
US6529426B1 (en) 1994-02-14 2003-03-04 Micron Technology, Inc. Circuit and method for varying a period of an internal control signal during a test mode
US6587978B1 (en) * 1994-02-14 2003-07-01 Micron Technology, Inc. Circuit and method for varying a pulse width of an internal control signal during a test mode
US5991214A (en) * 1996-06-14 1999-11-23 Micron Technology, Inc. Circuit and method for varying a period of an internal control signal during a test mode
US6448702B1 (en) 1999-09-28 2002-09-10 Nec Corporation Cathode ray tube with internal magnetic shield

Also Published As

Publication number Publication date
ID809B (id) 1996-07-12

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