JPH01200635A - Wiring protection film - Google Patents
Wiring protection filmInfo
- Publication number
- JPH01200635A JPH01200635A JP2525188A JP2525188A JPH01200635A JP H01200635 A JPH01200635 A JP H01200635A JP 2525188 A JP2525188 A JP 2525188A JP 2525188 A JP2525188 A JP 2525188A JP H01200635 A JPH01200635 A JP H01200635A
- Authority
- JP
- Japan
- Prior art keywords
- wiring
- film
- protection film
- wiring protection
- polyimide film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229920001721 polyimide Polymers 0.000 claims description 13
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 8
- 230000001681 protective effect Effects 0.000 claims description 4
- 239000000758 substrate Substances 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229920001342 Bakelite® Polymers 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000004637 bakelite Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000004321 preservation Methods 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Landscapes
- Formation Of Insulating Films (AREA)
- Local Oxidation Of Silicon (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明はプリント板の配線、とりわけ集積回路装置の配
線の保護１ｆ！ｉ！構造に関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application] The present invention is directed to the protection of wiring on printed circuit boards, especially the wiring of integrated circuit devices. i! Regarding structure.
従来、集積回路装置の電極配線の層間絶縁膜や表面保循
膜としてポリイミド膜、を用いる場合があり、プリント
配線の表面保護にもポリイミド膜を用いる場合があった
。Conventionally, polyimide films have sometimes been used as interlayer insulating films and surface preservation films for electrode wiring in integrated circuit devices, and polyimide films have also been used to protect the surfaces of printed wiring.
しかし、上記従来技術によると、ポリイミド膜は、配線
の機械的損傷や応力によるマイグレーシ曹ン断線等の防
止には役立つが、吸湿等によるアルミニウムや銅配線の
腐蝕等の問題点の解決には至らないのが現状である。However, according to the above-mentioned conventional technology, although the polyimide film is useful for preventing mechanical damage to wiring and migration wire breakage due to stress, it does not solve problems such as corrosion of aluminum and copper wiring due to moisture absorption, etc. The current situation is that there is no such thing.
本発明は、かかる従来技術の問題点をなくし、配線の耐
蝕性を向上するための保護膜構造を提供する事を目的と
する。It is an object of the present invention to provide a protective film structure for eliminating the problems of the prior art and improving the corrosion resistance of wiring.
上記問題点を、解決するために、本発明は配線保護膜に
関し、絶縁基板上に形成された電極配線の少くとも一部
を含む表面にはポリイミド膜が形成されて成ると共に、
該ポリイミド膜表面には少くととも窒化珪素を含む保護
膜を形成する手段をとる。In order to solve the above problems, the present invention relates to a wiring protective film, which comprises a polyimide film formed on a surface including at least a part of the electrode wiring formed on an insulating substrate, and
Measures are taken to form a protective film containing at least silicon nitride on the surface of the polyimide film.
以下、実施例により本発明を詳述する。 Hereinafter, the present invention will be explained in detail with reference to Examples.
第１図は本発明の一実施例を示す配線保護膜構造である
。すなわち、半導体集積回路の場合はシリコン等の半導
体から成る基板１０表面に酸化珪素膜、窒化珪素膜ある
いはポリイミド膜等から成る第１の絶縁膜２０表面に、
アルミニウム配線、あるいはアルミニウムとシリサイド
の多層配線あるいは銅配線等から成る電極配線３の表面
には、ポリイミド膜５が前記電極配線の少くとも一部（
歪緩和の為にＳ極配線３０表面あるいは表面の一部のみ
ポリイミド膜を形成する場合がある）を含む表面に形成
されて、該ポリイミド膜５の表面に窒化珪素あるいは窒
化珪素と酸化珪素の混合あるいは多層材から成る窒化珪
素膜６をプラズマや光ＣＶＤ法等により全面に形成し、
パッド部４やスクライプ部のポリイミド膜５の側面に迄
、前記窒化珪素膜６を形成したものである。尚、基板１
及び第１の絶縁膜２は、プリント板の場合にはガラス・
エポキシ樹脂やベークライトである。FIG. 1 shows a wiring protection film structure showing one embodiment of the present invention. That is, in the case of a semiconductor integrated circuit, on the surface of a substrate 10 made of a semiconductor such as silicon, on the surface of a first insulating film 20 made of a silicon oxide film, a silicon nitride film, a polyimide film, etc.
On the surface of the electrode wiring 3 made of aluminum wiring, multilayer wiring of aluminum and silicide, copper wiring, etc., a polyimide film 5 is applied to at least a part of the electrode wiring (
A polyimide film may be formed on the surface or only a part of the surface of the S-pole wiring 30 for strain relaxation), and silicon nitride or a mixture of silicon nitride and silicon oxide is formed on the surface of the polyimide film 5. Alternatively, a silicon nitride film 6 made of a multilayer material is formed on the entire surface by plasma or photo-CVD method,
The silicon nitride film 6 is formed up to the pad portion 4 and the side surface of the polyimide film 5 in the scribe portion. In addition, board 1
In the case of a printed board, the first insulating film 2 is made of glass.
These are epoxy resin and Bakelite.
本発明により、プリント板や集積回路装置の電極配−の
耐湿、耐蝕性を向上できる効果がある。The present invention has the effect of improving the moisture resistance and corrosion resistance of the electrode arrangement of printed boards and integrated circuit devices.
【図面の簡単な説明】
第１図は本発明の一実施例を示す配線保り膜構造を示す
図である。
１・・・・・・・・・基 板
２・・・・・・・・・第１の絶縁膜
３・・・・・・・・・電極配線
４・・・・・・・・・パッド部
５・・・・・・・・・ポリイ ミ ド膜６・・・・・・
・・・窒化珪素膜
以上
出願人 セイコーエプソン株式会社
代理人 弁理士 最上 務（他１名）BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a diagram showing a wiring protection film structure according to an embodiment of the present invention. 1...Substrate 2...First insulating film 3...Electrode wiring 4...Pad Part 5...Polyimide film 6...
...Silicon nitride film and above Applicant Seiko Epson Co., Ltd. Representative Patent attorney Tsutomu Mogami (1 other person)
Claims (1)
む表面にはポリイミド膜が形成されて成ると共に、該ポ
リイミド膜表面には少くとも窒化珪素を含む保護膜が形
成されて成る事を特徴とする配線保護膜。A polyimide film is formed on the surface including at least a part of the electrode wiring formed on the insulating substrate, and a protective film containing at least silicon nitride is formed on the surface of the polyimide film. Wiring protection film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2525188A JPH01200635A (en) | 1988-02-05 | 1988-02-05 | Wiring protection film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2525188A JPH01200635A (en) | 1988-02-05 | 1988-02-05 | Wiring protection film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01200635A true JPH01200635A (en) | 1989-08-11 |
Family
ID=12160779
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2525188A Pending JPH01200635A (en) | 1988-02-05 | 1988-02-05 | Wiring protection film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01200635A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014033053A (en) * | 2012-08-02 | 2014-02-20 | Toyota Motor Corp | Semiconductor device and method for manufacturing the same |
| JP2016207707A (en) * | 2015-04-16 | 2016-12-08 | 日本電信電話株式会社 | Semiconductor device and manufacturing method of the same |
-
1988
- 1988-02-05 JP JP2525188A patent/JPH01200635A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014033053A (en) * | 2012-08-02 | 2014-02-20 | Toyota Motor Corp | Semiconductor device and method for manufacturing the same |
| US9082778B2 (en) | 2012-08-02 | 2015-07-14 | Toyota Jidosha Kabushiki Kaisha | Semiconductor device and manufacturing method of same |
| JP2016207707A (en) * | 2015-04-16 | 2016-12-08 | 日本電信電話株式会社 | Semiconductor device and manufacturing method of the same |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR930009050A (en) | Semiconductor integrated circuit device and manufacturing method thereof | |
| JPH01200635A (en) | Wiring protection film | |
| JPS5938075A (en) | Thermal head | |
| JPH01283937A (en) | Method for forming surface protective film of organic polymer electronic device | |
| JPH07297370A (en) | Pads and wiring for semiconductor integrated circuit devices | |
| JP3372169B2 (en) | Semiconductor package | |
| JP3098333B2 (en) | Semiconductor device | |
| JPS617638A (en) | Semiconductor device | |
| JPS60242643A (en) | Wiring for electronic part | |
| JPH03179796A (en) | Hybrid integrated circuit | |
| JPS6288339A (en) | Polyimide film multilayer marking | |
| JPS62195195A (en) | Hybrid integrated circuit device | |
| JPS6436030A (en) | Semiconductor device | |
| JPS62252954A (en) | Semiconductor device | |
| JPH0246064Y2 (en) | ||
| JPH0357252A (en) | Resin-sealed semiconductor device | |
| JPS6054457A (en) | Waterproof device of electronic controller | |
| JPH04338599A (en) | Mounting board and mounting structure thereof | |
| JPH0739244Y2 (en) | Hybrid integrated circuit device | |
| JPS6037745A (en) | semiconductor equipment | |
| JPH0870057A (en) | Hybrid IC | |
| JPH04284687A (en) | Printed circuit board | |
| JPH11186430A (en) | Semiconductor device | |
| JPH05226518A (en) | Hybrid integrated circuit device | |
| JPS6281797A (en) | electronic equipment |