JPH01201929A - Assembling body of wire bonding pad - Google Patents

Assembling body of wire bonding pad

Info

Publication number
JPH01201929A
JPH01201929A JP63026016A JP2601688A JPH01201929A JP H01201929 A JPH01201929 A JP H01201929A JP 63026016 A JP63026016 A JP 63026016A JP 2601688 A JP2601688 A JP 2601688A JP H01201929 A JPH01201929 A JP H01201929A
Authority
JP
Japan
Prior art keywords
wire bonding
passivation film
film
bonding pad
wire
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP63026016A
Other languages
Japanese (ja)
Other versions
JPH0724276B2 (en
Inventor
Toru Koyama
徹 小山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP63026016A priority Critical patent/JPH0724276B2/en
Publication of JPH01201929A publication Critical patent/JPH01201929A/en
Publication of JPH0724276B2 publication Critical patent/JPH0724276B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/019—Manufacture or treatment of bond pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07551—Connecting or disconnecting of bond wires characterised by changes in properties of the bond wires during the connecting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/536—Shapes of wire connectors the connected ends being ball-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/59—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/981—Auxiliary members, e.g. spacers
    • H10W72/983—Reinforcing structures, e.g. collars

Landscapes

  • Wire Bonding (AREA)

Abstract

PURPOSE:To prevent the development of stripping and suppress the lowering of adhesive strength, by joining inner and outer periphery faces: of the first passivation film having grooves; the second passivation film having openings which cover the outer periphery parts of the opening of the grooves; and wire bonding pads with the inner and outer periphery faces of respective grooves. CONSTITUTION:A thin film is joined on an insulation film 18 consisting of silicon oxide and the first passivation film 11 is formed by performing selective etching treatment. An alloy film A which acts as a bonding pad 15 is joined on the above passivation film 11 and a resist 19 is coated. Then, the alloy film A is selectively etched and the wire bonding pad 15 is formed by removing the resist 19. Further, a thin film B which acts as the second passivation film 13 is formed on the wire bonding pad 15 as well as the first passivation film 11. The resist 20 is patterned on the thin film B and selective etching treatment is performed for the thin film which acts as the second passivation film 13. Subsequently, the second passivation film 13 is formed by removing the resist 20 and an assembling body of wire bonding pads is manufactured.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、例えばＩＣ，ＬＳＩ等の半導体装置における
ワイヤボンディングパッドの組立体に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an assembly of wire bonding pads in semiconductor devices such as ICs and LSIs.

〔従来の技術〕[Conventional technology]

従来、この種ワイヤポンディングパッドの組立体は第３
図および第４図に示すように構成されている。これを同
図に基づいて概略説明すると、同図において、符号１で
示すものは下層パッシベーション膜、２は上層パッシベ
ーション膜、３はワイヤポンディングパッド、４はワイ
ヤ、５はワイヤボールである。Conventionally, this type of wire bonding pad assembly is
It is constructed as shown in FIG. 4 and FIG. This will be briefly explained based on the figure. In the figure, reference numeral 1 indicates a lower passivation film, 2 an upper passivation film, 3 a wire bonding pad, 4 a wire, and 5 a wire ball.

このように構成されたワイヤポンディングパッドの組立
体におけるワイヤボンディングは、ワイヤボンディング
パッド３にワイヤ４の一端であるワイヤポール５を圧接
し、超音波印加、加熱等によって溶融接続した後、ワイ
ヤ４を引き出してから他端を外部リード（図示せず）に
接続する。Wire bonding in the wire bonding pad assembly configured as described above is carried out by press-welding the wire pole 5, which is one end of the wire 4, to the wire bonding pad 3, and then melting and connecting the wire 4 by applying ultrasonic waves, heating, etc. , and then connect the other end to an external lead (not shown).

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

ところで、この種ワイヤポンディングパッドの組立体に
おいては、通常ワイヤボンディングパッド３がＡｎある
いはＡβ−３ｉ合金によって形成サレ、下層パッシベー
ション膜１がＰＳＧ、ＢＰＳＧ、ＳｉＣ２等の無機ガラ
スによって形成されており、このため両部材１．３の密
着性が低（、ワイヤボンディング時にワイヤ４を引き出
す際の引張応力によって下層パッシベーション膜１との
界面からワイヤボンディングバンド３が剥離するという
問題があった。また、上層パッシベーション膜２が窒化
硅素等の無機物によって形成され、ワイヤ４が金、銅等
の金属によって形成されているため、両部材２，４の密
着性も低く、ワイヤボンディング時にワイヤボール５の
接続部分がワイヤボンディングバンド３と上層パッシベ
ーション膜２間に跨がって位置付けられると、ワイヤ４
の接着強度が低下するという不都合があった。この現象
は、上層パッシベーション膜２の開口周縁とワイヤボン
ディングバンド３との間に形成される段差によって一層
顕著であった。すなわち、ワイヤポール５の接続位置に
段差があると、ワイヤボンディング時の超音波分布状態
や熱分布状態が不均一になるからである。By the way, in this type of wire bonding pad assembly, the wire bonding pad 3 is usually formed of An or Aβ-3i alloy, and the lower passivation film 1 is formed of inorganic glass such as PSG, BPSG, SiC2, etc. For this reason, the adhesion between both members 1.3 was low (there was a problem that the wire bonding band 3 would peel off from the interface with the lower layer passivation film 1 due to the tensile stress when pulling out the wire 4 during wire bonding. Since the passivation film 2 is formed of an inorganic material such as silicon nitride, and the wire 4 is formed of a metal such as gold or copper, the adhesion between the two members 2 and 4 is low, and the connecting portion of the wire ball 5 may be damaged during wire bonding. When positioned across the wire bonding band 3 and the upper layer passivation film 2, the wire 4
There was a disadvantage that the adhesive strength of the material decreased. This phenomenon was even more remarkable due to the step formed between the opening periphery of the upper passivation film 2 and the wire bonding band 3. That is, if there is a step difference in the connection position of the wire pole 5, the ultrasonic wave distribution state and heat distribution state during wire bonding will become non-uniform.

本発明はこのような事情に鑑みなされたもので、ワイヤ
ポンディング時におけるワイヤボンディングバンドの剥
離発生を防止することができると共に、ワイヤの接続部
分がワイヤボンディングバンドとパッシベーション膜に
跨がって位置付けられた場合にワイヤの接着強度低下を
抑制することができるワイヤボンディングバンドの組立
体を提供するものである。The present invention was developed in view of the above circumstances, and it is possible to prevent the occurrence of peeling of the wire bonding band during wire bonding, and also to position the connecting portion of the wire astride the wire bonding band and the passivation film. An object of the present invention is to provide a wire bonding band assembly that can suppress a decrease in bonding strength of a wire when the wire is bonded to the wire.

〔課題を解決するための手段〕[Means to solve the problem]

本発明に係るワイヤボンディングバンドの組立体は、環
状孔を有する第１のパッシベーション膜と、このパッシ
ベーション膜上に接合されその開口周縁が環状孔の開口
外周部を覆う開口部を有する第２のパッシベーション膜
と、このパッシベーション膜の開口部内および第１のパ
ッシベーション膜の環状孔内に設けられかつ両パンシベ
ーション膜に接合された有底筒状のワイヤボンディング
バンドとを備え、このワイヤボンディングバンドの内外
周面を各々環状孔の内外周面に対接させたものである。The wire bonding band assembly according to the present invention includes a first passivation film having an annular hole, and a second passivation film having an opening that is bonded onto the passivation film and whose opening periphery covers the outer periphery of the annular hole. a cylindrical wire bonding band with a bottom provided in the opening of the passivation film and in the annular hole of the first passivation film and bonded to both pansivation films; The surfaces are in contact with the inner and outer circumferential surfaces of the annular hole, respectively.

〔作　用〕[For production]

本発明においては、第１のパンシヘーションに対するワ
イヤボンディングバンドの接触面積を広くすることがで
き、ワイヤボンディングバンド周囲のパッシベーション
膜面とワイヤ接続面とを同一の面上に位置付けることが
できる。In the present invention, it is possible to increase the contact area of the wire bonding band with the first pansition, and it is possible to position the passivation film surface around the wire bonding band and the wire connection surface on the same surface.

〔実施例〕〔Example〕

以下、本発明の構成等を図に示す実施例によって詳細に
説明する。第１図は本発明に係るワイヤボンディングバ
ンドの組立体を示す断面図である。EMBODIMENT OF THE INVENTION Hereinafter, the structure etc. of this invention will be explained in detail by the Example shown in the figure. FIG. 1 is a sectional view showing an assembly of a wire bonding band according to the present invention.

同図において、符号１１で示すものは多数の環状孔１２
を有する第１のパッシベーション膜で、基板（図示せず
）上に設けられている。１３はその開口周縁の裏側が前
記環状孔１２の開口外周部を覆う開口部１４を有する第
２のパッシベーション膜で、前記第１のパッシベーショ
ン膜１１上に接合されている。１５はワイヤ（図示せず
）の一端を接続する有底筒状のワイヤポンディングパッ
ドで、前記第１のパッシベーション膜１１の環状孔１２
内および第２のパッシベーション膜１３の開口部１４内
に設けられ、かつ前記両パンシベーション膜１１．１３
に接合されている。このワイヤボンディングパソド１５
の内周面１５ａは前記環状孔１２の内周面１２ａに対接
し、外周面１５ｂは前記環状孔１２の外周面１２ｂに対
接している。In the figure, what is indicated by reference numeral 11 is a large number of annular holes 12.
A first passivation film having a structure provided on a substrate (not shown). A second passivation film 13 has an opening 14 on the back side of the opening periphery that covers the outer periphery of the annular hole 12, and is bonded onto the first passivation film 11. 15 is a bottomed cylindrical wire bonding pad to which one end of a wire (not shown) is connected, and the annular hole 12 of the first passivation film 11 is
and the opening 14 of the second passivation film 13, and both the pansivation films 11.13
is joined to. This wire bonding path 15
The inner peripheral surface 15a of the annular hole 12 is in contact with the inner peripheral surface 12a of the annular hole 12, and the outer peripheral surface 15b of the annular hole 12 is in contact with the outer peripheral surface 12b of the annular hole 12.

このように構成されたワイヤボンディングバンドの組立
体においては、ワイヤボンディングバンド１５の内周面
１５ａおよび外周面１５ｂが各々環状孔１２の内周面１
２ａと外周面１２ｂに対接する構造であるから、第１の
パンシベーション１１に対するワイヤボンディングバン
ド１５の接触面積を広くすることができ、またワイヤボ
ンディングバンド１５の周囲に位置する第２のパッシベ
ーション膜面１３ａとワイヤ接続面１５ａとを同一の面
上に位置付けることができる。In the wire bonding band assembly configured in this way, the inner circumferential surface 15a and the outer circumferential surface 15b of the wire bonding band 15 are respectively aligned with the inner circumferential surface 1 of the annular hole 12.
2a and the outer peripheral surface 12b, the contact area of the wire bonding band 15 with the first pansivation 11 can be increased, and the second passivation film surface located around the wire bonding band 15 can be expanded. 13a and the wire connection surface 15a can be positioned on the same plane.

次に、本発明におけるワイヤボンディングバンドの組立
体の製造方法を第２図ｔａ）〜［ｅ）を用いて説明する
。Next, a method for manufacturing a wire bonding band assembly according to the present invention will be explained using FIGS. 2(a) to (e).

先ず、酸化硅素からなる絶縁膜１８上に薄膜を接合し、
これに選択エツチング処理を施して同図ｔａｌに示すよ
うに第１のパッシベーション膜１１を形成する。次に、
同図ｔｂ＋に示すように第１のバソシベ−ション膜１１
上にポンディングパッド１５となる合金膜Ａを接合して
レジスト１９を塗布し、このレジスト１９をマスクとし
て合金膜Ａを選択エツチングした後、同図（Ｃ）に示す
ようにレジスト１９を除去してワイヤボンディング時・
ノド１５を形成する。そして、同図（ｄｌに示すように
ワイヤボンディングバント１５上および第１のパッシベ
ーション膜１１上に第２のパッシベーション膜１３とな
る薄膜Ｂを形成し、この薄膜Ｂ上にレジスト２０をバク
ーニングする。First, a thin film is bonded onto the insulating film 18 made of silicon oxide,
A selective etching process is performed on this to form a first passivation film 11 as shown in FIG. next,
As shown in tb+ in the same figure, the first vasocivation film 11
The alloy film A that will become the bonding pad 15 is bonded thereon and a resist 19 is applied. After selectively etching the alloy film A using the resist 19 as a mask, the resist 19 is removed as shown in FIG. When wire bonding
A throat 15 is formed. Then, as shown in FIG. 2D, a thin film B, which will become the second passivation film 13, is formed on the wire bonding band 15 and the first passivation film 11, and a resist 20 is coated on this thin film B.

しかる後、このレジスト２０をマスクとして第２のパッ
シベーション膜１３となる薄膜に選択エソチンク処理を
施し、同図ｆｅ）に示すようにレジスト２０を除去して
から第２のパッシベーション膜１３を形成する。Thereafter, using this resist 20 as a mask, a selective etch process is performed on the thin film that will become the second passivation film 13, and after removing the resist 20, the second passivation film 13 is formed as shown in FIG.

このようにして、ワイヤボンディングバンドの組立体を
製造することができる。In this way, a wire bonding band assembly can be manufactured.

〔発明の効果〕〔Effect of the invention〕

以上説明したように本発明によれば、環状孔を有する第
１のパッシベーション膜と、このパッシベーション膜上
に接合されその開口周縁が環状孔の開口外周部を覆う開
口部を有する第２のパッシベーション膜と、このパソン
ヘーション膜の開口部内および第１のパッシベーション
膜の環状孔内に設けられかつ両パッシベーション膜に接
合された有底筒状のワイヤボンディングバンドとを備え
、このワイヤボンディングバンドの内外周面を各々環状
孔の内外周面に対接させたので、第１のパンシベーショ
ンに対するワイヤポンディングパッドの接触面積を広く
することができるから、ワイヤボンディング時における
ワイヤポンディングパッドの剥−乱発生を防止すること
ができる。また、ワイヤポンディングパッド周囲のパッ
シベーション膜面とワイヤ接続面とを同一の面上に位置
付けることができるから、ワイヤボンディング時にワイ
ヤの接続部分がワイヤポンディングパッドとパッシベー
ション膜に跨がって位置付けられることがあっても、従
来技術として比較してワイヤの接着強度低下を抑制する
ことができる。As explained above, according to the present invention, the first passivation film has an annular hole, and the second passivation film has an opening that is bonded onto the passivation film and whose opening periphery covers the outer periphery of the annular hole. and a bottomed cylindrical wire bonding band provided in the opening of this passivation film and in the annular hole of the first passivation film and bonded to both passivation films, the inner and outer periphery of this wire bonding band Since the surfaces are brought into contact with the inner and outer circumferential surfaces of the annular hole, the contact area of the wire bonding pad with respect to the first pansivation can be increased, so that irregular peeling of the wire bonding pad can occur during wire bonding. can be prevented. In addition, since the passivation film surface around the wire bonding pad and the wire connection surface can be positioned on the same surface, the wire connection part can be positioned across the wire bonding pad and the passivation film during wire bonding. Even if there is a problem, it is possible to suppress a decrease in bonding strength of the wire compared to the conventional technology.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図は本発明に係るワイヤボンディングパンドの組立
体を示す断面図、第２図は同じく本発明におりるワイヤ
ボンディングバンドの組立体の製造方法を説明するため
工程図、第３図は従来のワイヤボンディングバンドの組
立体を示す断面図、第４図はその要部を拡大して示す断
面図である。 １１・・・・第１のパッシベーション膜、１２・・・・
環状孔、１３・・・・第２のパッシベーション膜、１４
・・・・開口部、１５・・・・ワイヤポンディングパッ
ド。 代　理　人　大岩増雄 一９＝ ｒ１〜　　　　　　　　　　　　　　〆１ｈ〇　　　　
　　　　　−〇 ｒ）　　　　　　　−− （、ｌ　　　　　　　　　”ＯΦ 手続補正書（自発）FIG. 1 is a sectional view showing a wire bonding pan assembly according to the present invention, FIG. 2 is a process diagram for explaining a method of manufacturing a wire bonding band assembly according to the present invention, and FIG. 3 is a conventional FIG. 4 is a cross-sectional view showing an assembly of the wire bonding band, and FIG. 4 is a cross-sectional view showing an enlarged main part thereof. 11...first passivation film, 12...
Annular hole, 13...Second passivation film, 14
...Opening, 15...Wire bonding pad. Agent Masuichi Oiwa 9 = r1~ 〆1h〇
−〇r) --(,l ”OΦ Procedural amendment (voluntary)

Claims (1)

【特許請求の範囲】[Claims] 　環状孔を有する第１のパッシベーション膜と、このパ
ッシベーション膜上に接合されその開口周縁の裏側が前
記環状孔の開口外周部を覆う開口部を有する第２のパッ
シベーション膜と、このパッシベーション膜の開口部内
および前記第１のパッシベーション膜の環状孔内に設け
られかつ前記両パッシベーション膜に接合された有底筒
状のワイヤボンディングパッドとを備え、このワイヤボ
ンディングパッドの内外周面を各々前記環状孔の内外周
面に対接させたことを特徴とするワイヤボンディングパ
ッドの組立体。a first passivation film having an annular hole; a second passivation film bonded onto this passivation film and having an opening whose back side covers the outer periphery of the opening of the annular hole; and a bottomed cylindrical wire bonding pad provided in the annular hole of the first passivation film and bonded to both the passivation films, the inner and outer circumferential surfaces of the wire bonding pad being connected to the inner and outer surfaces of the annular hole, respectively. An assembly of wire bonding pads, characterized in that they are brought into contact with the peripheral surface.
JP63026016A 1988-02-05 1988-02-05 Wire Bonding Pad Assembly Expired - Lifetime JPH0724276B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63026016A JPH0724276B2 (en) 1988-02-05 1988-02-05 Wire Bonding Pad Assembly

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63026016A JPH0724276B2 (en) 1988-02-05 1988-02-05 Wire Bonding Pad Assembly

Publications (2)

Publication Number Publication Date
JPH01201929A true JPH01201929A (en) 1989-08-14
JPH0724276B2 JPH0724276B2 (en) 1995-03-15

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP63026016A Expired - Lifetime JPH0724276B2 (en) 1988-02-05 1988-02-05 Wire Bonding Pad Assembly

Country Status (1)

Country Link
JP (1) JPH0724276B2 (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS574144A (en) * 1980-06-10 1982-01-09 Toshiba Corp Semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS574144A (en) * 1980-06-10 1982-01-09 Toshiba Corp Semiconductor device

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Publication number Publication date
JPH0724276B2 (en) 1995-03-15

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