JPH01207923A - Venturi tube type silicon source vaporization device - Google Patents

Abstract

PURPOSE:To enable vaporization to be stable and to enable a flow rate of vaporization to be drastically increased by providing a gas supply port and gas discharge port and by providing a liquid silicon source suction port at the Venturi part to allow a liquid silicon source to be suctioned into supply gas and then to be vaporized. CONSTITUTION:A gas supply port 4 and a gas discharge port 5 are provided at one edge and the other edge of a Venturi tube 2, and a liquid silicon source suction port 6 is provided at one part of Venturi part 3. Then, carrier gas is sent from the gas supply port 2 with pressure and is converted into a high- speed gas flow in accordance with Bernoulli's theorem at the Ventuli part 3, and liquid silicon source is allowed to be absorbed from the liquid silicon source suction port 6 into this high-speed gas for vaporization within high-speed gas. It allows response on modifying the vaporization flow to be improved, the gas flow rate to be controlled rapidly, and a large flow rate to be transmitted.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a silicon source vaporization apparatus used in a semiconductor manufacturing process.

[Conventional technology] Silicon sources used in semiconductor manufacturing processes are difficult to vaporize, and they must be preserved to prevent them from leaking into the atmosphere, and the gas concentration when used in epitaxial processes must be constantly controlled to efficiently supply the required amount. Vaporization must be promoted as much as possible.

Conventionally, carrier gas was blown into the liquid silicon source stored in a tank, and vaporized silicon source gas was generated by bubbling.

Since the volatilization efficiency of silicon source into bubbles is not high, there is a limit to the ability to vaporize a large amount by tank bubbling, and it is difficult to maintain the required vaporization flow rate stably for a long period of time due to the influence of the drop in liquid temperature due to the heat of vaporization. Difficult to secure. Currently, there is a limit to the supply of vaporized gas for silicon sources, which is currently a bottleneck in improving the productivity of semiconductor manufacturing processes.

[Problems to be solved by the invention] In the vaporization and supply method of silicon source using tank bubbling, the effect of lowering the liquid temperature due to the heat of vaporization causes low efficiency, and the maximum vaporization amount is 30 g/min and the supply time is low. Breaking through the previous level of about 30 minutes, we will stabilize the amount of vaporization and raise the maximum value of the vaporization flow rate.

[Means for Solving the Problem] The present invention provides a gas supply port at one end of the Venturi tube and a gas delivery port at the other end, and also provides a liquid silicon source suction port in a part of the Venturi tube, so that liquid in the supplied gas is provided. This is a Venturi tube type silicon source vaporizer that is characterized by suctioning and vaporizing silicon source.It expands and vaporizes the weakly volatile liquid silicon source using the gas expansion force of the Venturi, thereby stabilizing the vaporization. At the same time, it eliminates the factors that reduce vaporization efficiency and significantly increases the vaporization flow rate.

[Operations and Examples] In an embodiment of the present invention shown in FIG. 1, a carrier gas is fed under pressure to a venturi pipe 2 of a vaporizer l from its gas supply port 2, and a venturi part 3 converts the carrier gas into a high-speed gas flow according to the Bernoulli principle. The liquid silicon source is sucked into this high-speed gas through the liquid silicon source suction port 6 and vaporized within the high-speed gas.

Tank 7 stores liquid silicon source. The carrier gas sped up by the Venturi effect can effectively impart vaporization energy to molecules of the liquid silicon source drawn from the tank 7.

The carrier gas containing the vaporized silicon source exits from the gas outlet 5. 5i as a liquid silicone source
CI4.5iHCI3+pressurized 5iH2CI2 etc. can be used, and N2+ N2+ 02+ as carrier gas
F2+ CI2 etc. are used.

The gas generation amount is stabilized by controlling the pressure balance between the gas supply port 4 and the gas delivery port 5, and the entire high-speed gas system, which has no factors that disrupt this stability, has a good response when changing the vaporization flow rate and the gas flow rate. can be quickly controlled and at the same time can deliver a large flow rate. Silicon source gas supply capacity is 1000g/
It reaches the level of supplying the amount of vaporized for 60 minutes.

[Effects of the Invention] The present invention creates a high-speed gas flow in accordance with the Bernoulli principle in a part of the venturi, draws a liquid silicon source into the high-speed gas, and effectively imparts vaporization energy to the liquid silicon source molecules within the high-speed gas. The entire high-speed gas system that vaporizes has a good response when changing the vaporization flow rate, allowing quick control of the gas flow rate and delivering a large flow rate.

[Brief explanation of the drawing]

FIG. 1 is a schematic explanatory diagram of a vaporizer according to an embodiment of the present invention. 1: Vaporizer 2: Penturi tube 3: Penturi part 4: Gas supply port 5: Gas delivery port 6
:Liquid silicon source suction port A:Tank applicant Toshiba Ceramics Corporation

Claims (1)

[Claims] (1) A gas supply port is provided at one end of the venturi tube, a gas delivery port is provided at the other end, and a liquid silicon source suction port is provided in the venturi section, so that liquid silicon source is added to the supply gas.
Venturi tube type silicon source vaporization device characterized by suctioning and vaporizing the source