JPH01211217A - Magnetic memory medium - Google Patents
Magnetic memory mediumInfo
- Publication number
- JPH01211217A JPH01211217A JP3419988A JP3419988A JPH01211217A JP H01211217 A JPH01211217 A JP H01211217A JP 3419988 A JP3419988 A JP 3419988A JP 3419988 A JP3419988 A JP 3419988A JP H01211217 A JPH01211217 A JP H01211217A
- Authority
- JP
- Japan
- Prior art keywords
- film
- silane coupling
- magnetic
- glass substrate
- plating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005291 magnetic effect Effects 0.000 title claims abstract description 39
- 239000000758 substrate Substances 0.000 claims abstract description 23
- 239000011521 glass Substances 0.000 claims abstract description 21
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims abstract description 14
- 229910000077 silane Inorganic materials 0.000 claims abstract description 14
- 230000008878 coupling Effects 0.000 claims abstract description 12
- 238000010168 coupling process Methods 0.000 claims abstract description 12
- 238000005859 coupling reaction Methods 0.000 claims abstract description 12
- 238000007747 plating Methods 0.000 abstract description 13
- 229910052751 metal Inorganic materials 0.000 abstract description 6
- 239000002184 metal Substances 0.000 abstract description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 4
- 238000007788 roughening Methods 0.000 abstract description 3
- 239000006087 Silane Coupling Agent Substances 0.000 abstract description 2
- 238000010438 heat treatment Methods 0.000 abstract description 2
- 239000012212 insulator Substances 0.000 abstract description 2
- 238000005342 ion exchange Methods 0.000 abstract description 2
- 230000000052 comparative effect Effects 0.000 description 7
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- 238000007772 electroless plating Methods 0.000 description 4
- 230000004913 activation Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- OFNHPGDEEMZPFG-UHFFFAOYSA-N phosphanylidynenickel Chemical compound [P].[Ni] OFNHPGDEEMZPFG-UHFFFAOYSA-N 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- SIBIBHIFKSKVRR-UHFFFAOYSA-N phosphanylidynecobalt Chemical compound [Co]#P SIBIBHIFKSKVRR-UHFFFAOYSA-N 0.000 description 2
- ACVYVLVWPXVTIT-UHFFFAOYSA-N phosphinic acid Chemical compound O[PH2]=O ACVYVLVWPXVTIT-UHFFFAOYSA-N 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- 241001156002 Anthonomus pomorum Species 0.000 description 1
- 229910001096 P alloy Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- BFNBIHQBYMNNAN-UHFFFAOYSA-N ammonium sulfate Chemical compound N.N.OS(O)(=O)=O BFNBIHQBYMNNAN-UHFFFAOYSA-N 0.000 description 1
- 229910052921 ammonium sulfate Inorganic materials 0.000 description 1
- 235000011130 ammonium sulphate Nutrition 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 229910000361 cobalt sulfate Inorganic materials 0.000 description 1
- 229940044175 cobalt sulfate Drugs 0.000 description 1
- KTVIXTQDYHMGHF-UHFFFAOYSA-L cobalt(2+) sulfate Chemical compound [Co+2].[O-]S([O-])(=O)=O KTVIXTQDYHMGHF-UHFFFAOYSA-L 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005238 degreasing Methods 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 230000005294 ferromagnetic effect Effects 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- LGQLOGILCSXPEA-UHFFFAOYSA-L nickel sulfate Chemical compound [Ni+2].[O-]S([O-])(=O)=O LGQLOGILCSXPEA-UHFFFAOYSA-L 0.000 description 1
- 229910000363 nickel(II) sulfate Inorganic materials 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 150000003377 silicon compounds Chemical class 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Landscapes
- Magnetic Record Carriers (AREA)
Abstract
Description
【発明の詳細な説明】 〔産業上の利用分野〕 磁気ディスク装置に用いられる磁気記憶媒体に関する。[Detailed description of the invention] [Industrial application field] The present invention relates to a magnetic storage medium used in a magnetic disk device.
近年、コンピュータシステムの高記憶容量化と小型化に
より、外部記憶装置の一つである磁気ディスク装置の重
要性か高まっており、磁気記憶媒体へは高記録密度化が
要求されてきている。In recent years, with the increase in storage capacity and miniaturization of computer systems, the importance of magnetic disk devices, which are one type of external storage devices, has increased, and magnetic storage media are required to have higher recording densities.
磁気記憶媒体の高記録密度化を達成するためには、磁性
膜の高保磁力(He)化と薄膜化に加え浮上中の磁気ヘ
ッドと磁気記憶媒体との空隙(浮上高さ)を狭くする必
要がある。In order to achieve high recording density in magnetic storage media, it is necessary to increase the coercive force (He) of the magnetic film, make it thinner, and narrow the air gap (flying height) between the flying magnetic head and the magnetic storage medium. There is.
ガラスを基板とする磁気記憶媒体の表面粗さは、アルミ
ニウム、ニッケルリン合金を基板とするよりも良好であ
ることから、磁気記憶媒体と磁気ヘッドが衝突すること
なく、浮上量を低く押え、記録密度を高めることが可能
である。そのため磁気記憶媒体用基板として注目されて
いる。例えば、特許公開間61−54018のように、
ガラス基板上へニッケル・リン合金を介し強磁性体金属
膜をめっきした磁気記憶媒体が知られている。The surface roughness of magnetic storage media using glass as a substrate is better than those using aluminum or nickel phosphorus alloy as a substrate, so the magnetic storage medium and magnetic head do not collide, the flying height is kept low, and recording is possible. It is possible to increase the density. Therefore, it is attracting attention as a substrate for magnetic storage media. For example, like patent publication number 61-54018,
A magnetic storage medium is known in which a ferromagnetic metal film is plated on a glass substrate via a nickel-phosphorous alloy.
(発明が解決しようとする課題〕
しかしながら従来の無電解めっき技術では、金属上への
めっきのような、電子か介在する結合機構がないことか
らガラス上へ密着性よくめっき膜を析出させることが難
しい。そのため磁気記憶媒体では耐久特性が劣化すると
いう問題点かある。(Problem to be solved by the invention) However, with conventional electroless plating technology, it is difficult to deposit a plating film with good adhesion on glass because there is no bonding mechanism involving electrons, unlike plating on metal. This is difficult.As a result, magnetic storage media have the problem of deteriorating their durability.
また、密着性よくめっき膜を析出させるため。Also, to deposit a plating film with good adhesion.
ガラス基板上へPd、Au、Ni、などの活性化金属を
蒸着、スパッタリンクする乾式方法かあるか、めっき工
程を複雑になるという問題点かある。There is a dry method in which activated metals such as Pd, Au, Ni, etc. are evaporated and sputter-linked onto a glass substrate, but there is a problem in that the plating process becomes complicated.
さらにガラス基板を機械的に粗したり、化学的エツチン
グ法て粗すことか、めっき膜とガラス基板の密着性を向
上させる比較的容易な手段である。しかしそのためにガ
ラス表面の形状か大きく変化し、表面粗さがかわり磁気
記憶媒体では磁気ヘットが安定浮上しないという問題点
がある。Furthermore, roughening the glass substrate mechanically or by chemical etching is a relatively easy means of improving the adhesion between the plating film and the glass substrate. However, this causes a large change in the shape of the glass surface, resulting in surface roughness, resulting in the problem that the magnetic head cannot stably fly in the magnetic storage medium.
本発明は以上の問題点を解決するもので、その目的は、
乾式方法や機械的、化学的表面粗化法を用いないて、ガ
ラス基板と磁性膜との密着力を高め、磁気記憶媒体の高
記録密度化を達成させることである。The present invention solves the above problems, and its purpose is to:
The object of the present invention is to increase the adhesion between a glass substrate and a magnetic film without using dry methods or mechanical or chemical surface roughening methods, thereby achieving higher recording density in magnetic storage media.
本発明の磁気記憶媒体は、鏡面加工したガラス基板と磁
性膜との間に中間膜として、シランカップリング膜を成
膜させることを特徴とする。The magnetic storage medium of the present invention is characterized in that a silane coupling film is formed as an intermediate film between a mirror-finished glass substrate and a magnetic film.
(作 用)
本発明のシランカップリンク膜は、ガラス基板と磁性膜
との間に形成することて、両者の密着性を向上させ、ガ
ラス基板の表面を粗さないため、磁気記憶媒体の耐久特
性を向上させ磁気へ・ンド安定低浮上高さを可能にする
ことができる。その結果、高記録密度化が達成できる。(Function) By forming the silane coupling film between the glass substrate and the magnetic film, it improves the adhesion between the two and does not roughen the surface of the glass substrate, thereby improving the durability of the magnetic storage medium. By improving the characteristics, it is possible to achieve a stable magnetic field and a low flying height. As a result, high recording density can be achieved.
また、シランカップリング膜による密着性向上の理由は
、シランカップリング膜を形成する化合物か、一方ては
ガラスの生成分であるケイ素化合物と共有結合やそれに
類似した結合をし、他方ては活性化金属やめつき金属と
電子を介在とした結合をするため、絶縁体であるガラス
基板とめつき膜である磁性膜とが密着よく結合するので
ある。In addition, the reason for the improved adhesion due to the silane coupling film is that the compound that forms the silane coupling film has a covalent bond or similar bond with the silicon compound, which is a product of glass, and Since the bond is made with the metal compound or the plated metal through electrons, the glass substrate, which is an insulator, and the magnetic film, which is the plating film, are bonded closely together.
さらに上記結合は、加熱により強固にな′る。Furthermore, the above-mentioned bond is strengthened by heating.
以下、実施例により詳細に説明する。Hereinafter, this will be explained in detail using examples.
鏡面加工したガラス基板を常法て脱脂し、活性化は常法
のスズ・パラジウム湿式活性化法により行なった。その
上に次に示すニッケル・リン、コバルト・リンを無電解
めっき法でそれぞれ500O入、1000人形成させ、
磁気記憶媒体を製造した。The mirror-finished glass substrate was degreased by a conventional method, and activation was performed by a conventional tin-palladium wet activation method. On top of that, the following nickel/phosphorus and cobalt/phosphorus were formed by electroless plating, each containing 500O and 1000.
A magnetic storage medium was manufactured.
上記めっき膜をBrenner形引帳試験機により強度
を調べた結果、0 、05 K g / m m ’で
あった。The strength of the above-mentioned plating film was examined using a Brenner type ledger tester, and the strength was found to be 0.05 Kg/mm'.
ニッケル・リンめっき液
〈組 成〉
硫酸ニッケル 0.05mol/立次亜リン酸
0.2mol/文
クエン酸 0.4mol/見
硫酸ア見上酸アンモニウム mol/又〈条 件〉
pH4,0(アンモニア)
めっき温度 80°C
コバルト・リンめっき液
〈組 成〉
硫酸コバルト 0.1 mol/文次亜リン酸
0.2 mo1/1クエン酸 0.2
mol/文はう酸 0.5 mol/
見〈条 件〉
pH7゜O(アンモニア)
浴温度 70℃
(実施例1)
比較例と同様の基板を常法て脱脂した後、下記のシラン
カップリング処理液でシラン力・ンプ膜を成膜させ、水
洗後その上に比較例と同様の活性化、ニッケル・リン、
コバルト・リン無電解めっき液て磁性膜を形成させ磁気
記憶媒体を製造した。Nickel/phosphorous plating solution (composition) Nickel sulfate 0.05 mol/standing hypophosphorous acid
0.2 mol/ml Citric acid 0.4 mol/Ammonium sulfate mol/Also <Conditions> pH 4,0 (ammonia) Plating temperature 80°C Cobalt/phosphorous plating solution <Composition> Cobalt sulfate 0.1 mol/hypophosphorous acid
0.2 mo1/1 citric acid 0.2
mol/text 0.5 mol/
<Conditions> pH 7°O (ammonia) Bath temperature 70°C (Example 1) After degreasing the same substrate as in the comparative example in the usual manner, a silane coupling treatment solution was used to form a silane coupling film. After washing with water, activate the same as in the comparative example, nickel phosphorus,
A magnetic storage medium was manufactured by forming a magnetic film using a cobalt-phosphorus electroless plating solution.
シランカップリンク液
〈組 成〉
シランカップリング剤 0.5ml/MS H60
20(東しシリコン製)
イオン交換水 999.5ml/Jl〈条 件
〉
温度 室温
処理時間 30秒〜lO分
上記めっき膜の引張強度を比較例と同様の方法で測定し
、その結果を第1表に示す。Silane coupling liquid (composition) Silane coupling agent 0.5ml/MS H60
20 (manufactured by Toshi Silicon) Ion exchange water 999.5 ml/Jl <Conditions> Temperature Room temperature treatment time 30 seconds to 10 minutes The tensile strength of the above plating film was measured in the same manner as in the comparative example, and the results were Shown in the table.
(実施例2)
比較例と同様の基板を脱脂処理し、実施例1のシランカ
ップリンク液によりシランカップリンク膜を成膜させ゛
、水洗後に50°C〜250℃の温度て1分間以上加熱
した。その上に比較例と同様の活性化、ニッケル・リン
、コバルト・リン無電解めっき液により磁性膜を形成さ
せ磁気記憶媒体を製造した。(Example 2) A substrate similar to that of the comparative example was degreased, and a silane cup link film was formed using the silane cup link solution of Example 1. After washing with water, the substrate was heated at a temperature of 50°C to 250°C for 1 minute or more. did. Thereon, a magnetic film was formed using the same activation, nickel-phosphorus, and cobalt-phosphorus electroless plating solution as in the comparative example to produce a magnetic storage medium.
上記めっき膜の引張強度を比較例と同様に測定し、その
結果を第2表に示す。The tensile strength of the above plated film was measured in the same manner as in the comparative example, and the results are shown in Table 2.
以上比較例と実施例のように、ガラス基板と磁性膜との
間にシランカップリング膜を成膜させることにより、ガ
ラス基板と磁性膜の密着力を高める効果かあることかわ
かる。It can be seen that forming a silane coupling film between the glass substrate and the magnetic film as in the comparative examples and examples above has the effect of increasing the adhesion between the glass substrate and the magnetic film.
(発明の効果)
以上述べたように1本発明によればガラス基板と磁性膜
の密着力を容易に高めることかでき、磁気記憶媒体の高
記録密度化に大きな効果かある。(Effects of the Invention) As described above, according to the present invention, the adhesion between the glass substrate and the magnetic film can be easily increased, which has a great effect on increasing the recording density of magnetic storage media.
以上 出願人 セイコーエプソン株式会社 〕今that's all Applicant: Seiko Epson Corporation 〕now
Claims (1)
てシランカップリング膜を成膜させることを特徴とする
磁気記憶媒体。A magnetic storage medium characterized in that a silane coupling film is formed as an intermediate film between a mirror-finished glass substrate and a magnetic film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3419988A JPH01211217A (en) | 1988-02-17 | 1988-02-17 | Magnetic memory medium |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3419988A JPH01211217A (en) | 1988-02-17 | 1988-02-17 | Magnetic memory medium |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01211217A true JPH01211217A (en) | 1989-08-24 |
Family
ID=12407495
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3419988A Pending JPH01211217A (en) | 1988-02-17 | 1988-02-17 | Magnetic memory medium |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01211217A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0657900A1 (en) * | 1993-12-06 | 1995-06-14 | Matsushita Electric Industrial Co., Ltd. | Hybrid magnetic substrate and method for producing the same |
| US5771555A (en) * | 1993-11-01 | 1998-06-30 | Matsushita Electric Industrial Co., Ltd. | Method for producing an electronic component using direct bonding |
| US5847489A (en) * | 1993-01-25 | 1998-12-08 | Matsushita Electric Industrial Co., Ltd. | Piezoelectric device and a package |
| US6378338B1 (en) * | 1998-08-31 | 2002-04-30 | Showa Denko K.K. | Method for producing magnetic disk substrates |
-
1988
- 1988-02-17 JP JP3419988A patent/JPH01211217A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5847489A (en) * | 1993-01-25 | 1998-12-08 | Matsushita Electric Industrial Co., Ltd. | Piezoelectric device and a package |
| US5771555A (en) * | 1993-11-01 | 1998-06-30 | Matsushita Electric Industrial Co., Ltd. | Method for producing an electronic component using direct bonding |
| US5925973A (en) * | 1993-11-01 | 1999-07-20 | Matsushita Electric Industrial Co., Ltd. | Electronic component and method for producing the same |
| EP0657900A1 (en) * | 1993-12-06 | 1995-06-14 | Matsushita Electric Industrial Co., Ltd. | Hybrid magnetic substrate and method for producing the same |
| US6120917A (en) * | 1993-12-06 | 2000-09-19 | Matsushita Electric Industrial Co., Ltd. | Hybrid magnetic substrate and method for producing the same |
| US6378338B1 (en) * | 1998-08-31 | 2002-04-30 | Showa Denko K.K. | Method for producing magnetic disk substrates |
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