JPH01219094A - Liquid phase epitaxial growth boat - Google Patents

Abstract

PURPOSE:To grow a film in which the in-plane uniformity of film thickness is excellent on a substrate and to improve the characteristics and yield of a semiconductor element by forming the shape in the lower part of the wall surface of a soln. reservoir for a soln. holder into the same shape as the shape of a raw material soln. at the time of epitaxial growth. CONSTITUTION:A liquid phase epitaxial growth boat is constituted so that the shapes in the lower parts of the wall surfaces of the soln. reservoirs 12 for a soln. holder 11 are formed into the same shape as the shape of a raw material soln. 8 at a time of epitaxial growth, namely, the shapes rounded in the corners. Epitaxial growth is performed by regulating the boat to the epitaxial growth starting temp. and sliding a substrate 5 under the soln. reservoir 12 of the soln. holder 11 introduced with the raw material soln. 8 molted at the required temp. with a quartz rod 7. At this time, the whole surface of the substrate 5 can be brought into contact with the soln. 8 in the same state as it and the grown film having uniform thickness in a range over the whole surface of the substrate 5 can be obtained.

Description

DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a liquid phase epitaxial growth boat of a slide type liquid phase epitaxial growth apparatus for the semiconductor industry.

BACKGROUND OF THE INVENTION Recently, slide type liquid phase epitaxial growth apparatuses have become indispensable in the semiconductor industry for multilayer epitaxial growth of compound semiconductors.

DESCRIPTION OF THE PREFERRED EMBODIMENTS A conventional liquid phase epitaxial growth boat (hereinafter abbreviated as growth boat) used in a slide type liquid phase epitaxial growth apparatus will be described below with reference to the drawings.

FIG. 3 is a cross-sectional view of the conventional growth boat in a proper position parallel to the sliding direction, and FIG. 4 is a cross-sectional view of the conventional growth boat perpendicular to the sliding direction. In FIGS. 3 and 4, reference numeral 1 denotes a solution holder having a plurality of M liquid reservoirs 2 for epitaxially growing several layers having different compositions, and is fixed to a boat 3. Reference numeral 4 denotes a substrate holder having a recess 6 on its upper surface for placing a substrate 5 thereon, and this substrate holder 4 can slide on the boat 3 in the direction A in FIG. 3 while in contact with the solution holder 1. There is.

Further, the shape of the wall surface of the solution reservoir 2 into which the raw materials are charged is a plane perpendicular to the substrate holder 4.

7 is a quartz rod on which the substrate holder 4 is slid.

In the above configuration, the growth boat containing the substrate and raw materials is installed in the center of a reaction chamber (not shown), and is heated by a heater (not shown) in an atmosphere of reducing gas such as hydrogen gas. When the temperature reaches the epitaxial growth start temperature, the substrate 5 of the substrate holder 4 is slid with the quartz rod 7 to below the solution reservoir 2 containing the melted raw material solution 8, and the substrate 5 and the raw material solution 8 come into contact and epitaxial growth starts. It was done.

Problems to be Solved by the Invention However, in the conventional configuration as described above, the shape of the raw material solution 8 during epitaxial growth has rounded corners due to surface tension, as shown in FIG. The growth state is different between the center and the periphery of the substrate 5. As a result, abnormal growth occurs at the periphery, resulting in a thicker film, and the thickness of the film grown on the substrate is no longer uniform within the plane.Furthermore, the edges of the grown film become jagged and thick, resulting in subsequent growth. During the process, it was not possible to add markers to this part. Furthermore, since the control of the film thickness is incomplete, there is a problem in that the characteristics and yield of the semiconductor device are deteriorated.

The present invention solves the above problems and provides a liquid phase epitaxial growth boat that can grow a film with good in-plane thickness uniformity on a substrate and improve the characteristics and yield of semiconductor devices. The purpose is to

Means for Solving the Problems In order to solve the above problems, the liquid phase epitaxial growth boat of the present invention has the lower shape of the solution reservoir wall surface of the solution holder the same as the shape during epitaxial growth of the raw material solution.

Effect With the above configuration, the lower shape of the solution reservoir wall of the solution holder is made the same as the shape during epitaxial growth of the raw material solution, so that even when the corners of the raw material solution are rounded due to surface tension during epitaxial growth, the entire surface of the substrate can be covered with the raw material solution. They contact each other in the same state, and the thickness of the grown film becomes uniform over the entire surface of the substrate.

EXAMPLE An example of the present invention will be described below based on the drawings. Note that the same components as in FIGS. 3 and 4 of the conventional example are denoted by the same reference numerals, and explanations thereof will be omitted.

FIG. 1 is a vertical cross-sectional view of the liquid phase epitaxial growth boat of the present invention parallel to the sliding direction, and FIG. 2 is a cross-sectional view of the same liquid phase epitaxial growth boat perpendicular to the sliding direction. The shape of the solution reservoir of the solution holder is different from the conventional example shown in FIGS. 3 and 4, and the shape of the lower part of the wall surface of the solution reservoir 12 of the solution holder 11 is different from the shape of the epitaxial growth of the raw material solution 8, that is, the corner is It has the same rounded shape.

With the above configuration, the epitaxial growth start temperature is reached,
When the substrate 5 is slid with the quartz rod 7 to below the solution reservoir 12 of the solution holder 11 containing the raw material solution 8 melted at a desired temperature and epitaxial growth is performed, the entire surface of the substrate 5 is the same as the raw material solution 8. can be contacted in the state of
A grown film having a uniform thickness over the entire surface of the substrate 5 can be obtained. Therefore, the characteristics and yield of semiconductor devices manufactured using this substrate 5 can be improved, and since the edges of the grown film can be made straight, it is also possible to perform processing such as inserting markers into these edges.

Effects of the Invention As described above, according to the present invention, by making the lower shape of the solution reservoir wall surface of the solution holder the same as the shape during epitaxial growth of the raw material solution, the corners of the raw material solution are rounded due to surface tension during epitaxial growth. The entire surface of the substrate can be brought into contact with the raw material solution in the same state even when the substrate is in a state of dissolution, and a grown film with a uniform thickness can be obtained over the entire surface of the substrate, which improves the characteristics and yield of semiconductor devices that require control of film thickness. can be improved. Furthermore, since the end of the grown film can be made straight, it is possible to perform processing such as inserting a marker in this part, which is highly effective.

[Brief explanation of the drawing]

FIGS. 1 and 2 are longitudinal cross-sectional views parallel to the sliding direction and cross-sectional views perpendicular to the sliding direction of a liquid phase epitaxial growth boat during epitaxial growth, showing one embodiment of the present invention, and FIGS. 3 and 4 are They are a vertical cross-sectional view parallel to the sliding direction and a cross-sectional view perpendicular to the sliding direction of a liquid phase epitaxial growth boat during conventional epitaxial growth. 3... Boat, 4... Board holder, 5... Board,
8... Raw material solution, 11... Solution holder, 12...
Solution reservoir. Agent Yoshihiro Morimoto ・Figure 1 4-Lido, 1 each, Luda 5-Kabu 1 and 8 boiling I juice; 8 liquid j Figure 3 4 Wa 6.5

Claims (1)

[Claims] 1. A liquid phase epitaxial growth boat in which the shape of the lower part of the solution reservoir wall of the solution holder is the same as the shape during epitaxial growth of the raw material solution.