JPH01228155A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPH01228155A JPH01228155A JP63053588A JP5358888A JPH01228155A JP H01228155 A JPH01228155 A JP H01228155A JP 63053588 A JP63053588 A JP 63053588A JP 5358888 A JP5358888 A JP 5358888A JP H01228155 A JPH01228155 A JP H01228155A
- Authority
- JP
- Japan
- Prior art keywords
- chip
- ribbons
- substrate
- wires
- conductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
- H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
- H10W70/68—Shapes or dispositions thereof
- H10W70/682—Shapes or dispositions thereof comprising holes having chips therein
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/531—Shapes of wire connectors
- H10W72/533—Cross-sectional shape
- H10W72/534—Cross-sectional shape being rectangular
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/531—Shapes of wire connectors
- H10W72/5363—Shapes of wire connectors the connected ends being wedge-shaped
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/541—Dispositions of bond wires
- H10W72/5445—Dispositions of bond wires being orthogonal to a side surface of the chip, e.g. parallel arrangements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/59—Bond pads specially adapted therefor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/851—Dispositions of multiple connectors or interconnections
- H10W72/874—On different surfaces
- H10W72/884—Die-attach connectors and bond wires
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
- H10W72/931—Shapes of bond pads
- H10W72/932—Plan-view shape, i.e. in top view
Landscapes
- Lead Frames For Integrated Circuits (AREA)
- Wire Bonding (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野]
本発明は半導体装置に関し、特に高密度化及び多ビン化
を図った半導体装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application] The present invention relates to a semiconductor device, and particularly to a semiconductor device with high density and a large number of bins.
従来、例えばピングリッドアレイ(PGA)型の半導体
装置では、PGA基板に設けた配線と、二のPGA基板
に搭載した半導体チップの電極パッドとをボンディング
ワイヤで接続し、PGAI板ψ外部接続用ピンと半導体
チップとの電気的接続を行っている。近年、この種の半
導体チップの高密度化に伴ってピン数が増大され、半導
体チップとPGA基板とを接続するボンディングワイヤ
数も増大する傾向にある。このため、半導体チップ側で
は、多数個の電極パッドを千鳥状、即ち2列かつ交互に
配列し、ボンディングワイヤを内側位置と外側位置に交
互に接続させることで、この多ピン化に対処している。Conventionally, for example, in a pin grid array (PGA) type semiconductor device, wiring provided on a PGA substrate and electrode pads of a semiconductor chip mounted on a second PGA substrate are connected with bonding wires, and pins for external connection on the PGAI board ψ are connected. Makes electrical connections with semiconductor chips. In recent years, as the density of this type of semiconductor chip has increased, the number of pins has increased, and the number of bonding wires connecting the semiconductor chip and the PGA substrate has also tended to increase. For this reason, on the semiconductor chip side, a large number of electrode pads are arranged in a staggered manner, that is, in two rows and alternately, and bonding wires are connected alternately to inner and outer positions to cope with this increase in pin count. There is.
上述した従来の半導体装置は、電極パッドを千鳥状に配
列しても、接続されるボンディングワイヤの隣接ピッチ
寸法は電極パッドが1列の場合に比較して1/2となり
、隣接するボンディングワイヤとの間で短絡事故が起き
易くなる。このため、結果的には電極パッドの隣接ピッ
チ寸法を1列の場合よりも大きくとる必要があり、半導
体装置の高密度化、多ピン化に対処できないという問題
がある。In the conventional semiconductor device described above, even if the electrode pads are arranged in a staggered manner, the pitch between adjacent bonding wires to be connected is 1/2 compared to when the electrode pads are arranged in one row, and the pitch between adjacent bonding wires is Short circuit accidents are more likely to occur between the two. Therefore, as a result, it is necessary to take a larger pitch between adjacent electrode pads than in the case of one row, and there is a problem that it is not possible to cope with higher density and increase in the number of pins of semiconductor devices.
本発明は高密度化、多ピン化に容易に対応できる半導体
装置を提供することを目的としている。SUMMARY OF THE INVENTION An object of the present invention is to provide a semiconductor device that can easily accommodate higher density and an increased number of pins.
〔課題を解決するための手段]
本発明の半導体装置は、基板のチップ搭載部周囲にリボ
ン用パッドを、その外側にワイヤ用パッドを夫々多数個
配設し、半導体チップは周辺部に多数本の導体リボンを
一体形成するとともに、この導体リボンの内側に多数個
の電極パッドを配設し、この導体リボンをリボン用パッ
ドに直接接続し、電極パッドをボンディングワイヤによ
りワイヤ用パッドに接続した構成としている。[Means for Solving the Problems] The semiconductor device of the present invention has a large number of ribbon pads arranged around the chip mounting portion of the substrate, and a large number of wire pads arranged outside of the pads, and the semiconductor chip has a large number of wire pads arranged around the chip mounting portion of the substrate. A conductor ribbon is integrally formed, a large number of electrode pads are arranged inside this conductor ribbon, this conductor ribbon is directly connected to the ribbon pad, and the electrode pad is connected to the wire pad with a bonding wire. It is said that
上述した構成では、導体リボンとボンディングワイヤと
は上下方向に間隔を有する状態で夫々延設されることに
なり、相互の干渉が防止され、隣接する接続線間の短絡
が防止されて半導体装置の高密度化、他ピン化に対応す
る。In the above-described configuration, the conductor ribbon and the bonding wire are vertically spaced apart from each other, thereby preventing mutual interference and short-circuiting between adjacent connection wires, thereby improving the performance of the semiconductor device. Supports higher density and multiple pins.
〔実施例] 次に、本発明を図面を参照して説明する。〔Example] Next, the present invention will be explained with reference to the drawings.
第1図は本発明をPGA型半導体装置に適用した実施例
の断面図であり、第2図は半導体チップの斜視図、第3
図はその一部破断拡大平面図である。FIG. 1 is a cross-sectional view of an embodiment in which the present invention is applied to a PGA type semiconductor device, FIG. 2 is a perspective view of a semiconductor chip, and FIG.
The figure is a partially cutaway enlarged plan view.
図示のように、半導体チップ1の表面周辺部には、回路
配線の一部配線1aに直接接続された複数本の導体リボ
ン2を一体的に接続し、かつこれら導体リボン2の内側
に多数個の電極パッド3を配設している。この導体リボ
ン2は、例えばテープオートメイテッドボンディング(
TAB)と呼ばれる方法により形成される。即ち、フィ
ルム状のテープに導体リードを予め接着しておき、この
テープに対して半導体チップ1を直接ポンディングし、
その後テープを剥がして半導体チップ1上に導体リード
を残すことにより接続を行う方法である。As shown in the figure, a plurality of conductor ribbons 2 which are directly connected to a part of the circuit wiring 1a are integrally connected to the peripheral part of the surface of the semiconductor chip 1, and a large number of conductor ribbons 2 are connected to the inside of these conductor ribbons 2. electrode pads 3 are arranged. This conductor ribbon 2 can be used, for example, by tape automated bonding (
It is formed by a method called TAB). That is, conductor leads are adhered to a film-like tape in advance, and the semiconductor chip 1 is directly bonded to this tape.
In this method, the tape is then peeled off, leaving conductor leads on the semiconductor chip 1 to make connections.
そして、この半導体チップ1は、PGA基板11の中央
凹部に銀ペースト5により搭載固着され、PGA基板1
1に形成されたリード用パッド12に前記導体リボン2
を熱圧着法等により直接接続させる。また、このリード
用パッド12の外側にはワイヤ用パッド13を形成して
おり、このワイヤ用パッド13と半導体チップlの電極
パッド3とをボンディングワイヤ4によって接続してい
る。This semiconductor chip 1 is mounted and fixed in the center recess of the PGA substrate 11 with silver paste 5, and the PGA substrate 1
The conductor ribbon 2 is attached to the lead pad 12 formed on the conductor ribbon 1.
are directly connected by thermocompression bonding method, etc. Further, a wire pad 13 is formed outside the lead pad 12, and the wire pad 13 and the electrode pad 3 of the semiconductor chip 1 are connected by a bonding wire 4.
なお、14は前記リード用パッド12.ワイヤ用パッド
13に接続される外部接続用ピン、6はキャップである
。Note that 14 is the lead pad 12. The external connection pin 6 connected to the wire pad 13 is a cap.
この構成によれば、半導体チップ1は、回路の一部が導
体リボン2によってPGA基板ll側に電気接続され、
かつ残りの回路部分がボンディングワイヤ4によってP
GA1板11側に接続される。そして、導体リボン2は
半導体チップ1の表面と略同−平面において延設され、
ボンディングワイヤ4はチップ表面より高い位置でルー
プ状に延設されて夫々半導体チップ1とPGA基板11
とを電気接続しているので、両者が干渉して短絡するこ
とは殆どない。According to this configuration, a part of the circuit of the semiconductor chip 1 is electrically connected to the PGA board 11 side by the conductor ribbon 2,
And the remaining circuit part is connected to P by bonding wire 4.
It is connected to the GA1 board 11 side. The conductor ribbon 2 is extended in substantially the same plane as the surface of the semiconductor chip 1,
The bonding wire 4 is extended in a loop shape at a position higher than the chip surface, and is connected to the semiconductor chip 1 and the PGA substrate 11, respectively.
Since the two are electrically connected, there is almost no chance of interference and short circuits between the two.
特に、この実施例では電極パッド3を導体リボン2のピ
ッチ中間に配設しているので、導体リボン2とボンディ
ングワイヤ4も半ピツチずれて延設されることになり、
相互の短絡を更に効果的に防止することが可能となる。In particular, in this embodiment, since the electrode pad 3 is arranged in the middle of the pitch of the conductor ribbon 2, the conductor ribbon 2 and the bonding wire 4 are also extended with a half-pitch shift.
It becomes possible to more effectively prevent mutual short circuits.
これにより、半導体チップ1の高密度化に伴ってPGA
基板11との電気接続の線数が増えた場合にも、容易に
これに対処でき、半導体装置の高密度化、多ピン化に対
応できる。As a result, as the density of the semiconductor chip 1 increases, the PGA
Even if the number of electrical connection lines with the substrate 11 increases, this can be easily handled, and it is possible to cope with higher density and multi-pin semiconductor devices.
第4図は本発明の他の実施例であり、ここでは−枚の基
板に複数個の半導体チップを搭載した半導体装置を示し
ている。FIG. 4 shows another embodiment of the present invention, which shows a semiconductor device in which a plurality of semiconductor chips are mounted on two substrates.
図において、基板21はアルミナセラミックで形成し、
この表面に厚膜技術により導体パターンを形成している
。この基板21の2箇所には半導体チップの搭載部を画
成し、各チップ搭載部の周囲には夫々前記導体パターン
の一部でリード用パッド、22を形成している。また、
これらのリード用パッド22の外側にはワイヤ用パッド
23を形成している。In the figure, the substrate 21 is made of alumina ceramic,
A conductor pattern is formed on this surface using thick film technology. Semiconductor chip mounting portions are defined at two locations on this substrate 21, and lead pads 22 are formed around each chip mounting portion using a portion of the conductive pattern. Also,
Wire pads 23 are formed outside these lead pads 22 .
そして、チップ搭載部に半導体チップ1を搭載固着する
とともに、その導体リード2をリード用パッド22に接
続し、かつ電極パッド3をボンディングワイヤ4により
ワイヤ用パッド23に接続している。Then, the semiconductor chip 1 is mounted and fixed on the chip mounting portion, and its conductor leads 2 are connected to the lead pads 22, and the electrode pads 3 are connected to the wire pads 23 by bonding wires 4.
この構成においても、各半導体チップ1と基板21は夫
々導体リード2とボンディングワイヤ4により電気接続
され、かつ一方では導体リボン2とボンディングワイヤ
4は上下方向に離間位置されて相互間での短絡が防止さ
れるので、半導体装置の高密度化、他ピン化に容易に対
応できる。Also in this configuration, each semiconductor chip 1 and substrate 21 are electrically connected by conductor leads 2 and bonding wires 4, respectively, and on the other hand, conductor ribbon 2 and bonding wire 4 are vertically spaced apart to prevent short circuits between them. Since this is prevented, it is possible to easily respond to higher density semiconductor devices and the use of multiple pins.
なお、本発明は3個以上の半導体チップを搭載する半導
体装置にも同様に適用できる。Note that the present invention can be similarly applied to a semiconductor device equipped with three or more semiconductor chips.
〔発明の効果]
以上説明したように本発明は、半導体チップの周辺部に
導体リボンを一体形成し、この内側に電極パッドを配設
し、この導体リボンと、電極パッドに接続されるボンデ
ィングワイヤとを上下方向に間隔を有する状態で夫々延
設しているので、隣接する接続線間の短絡が防止でき、
半導体チップと基板とを電気接続する接続線数を増大し
て半導体装置の高密度化、他ピン化を容易に達成できる
。[Effects of the Invention] As explained above, the present invention includes integrally forming a conductor ribbon around the periphery of a semiconductor chip, arranging electrode pads inside the conductor ribbon, and bonding wires connected to the conductor ribbon and the electrode pads. and extend vertically with a gap between them, so that short circuits between adjacent connection wires can be prevented.
By increasing the number of connection lines that electrically connect the semiconductor chip and the substrate, it is possible to easily achieve higher density of the semiconductor device and the use of multiple pins.
第1図は本発明の一実施例の断面図、第2図は半導体チ
ップの斜視図、第3図は第1図の半導体装置の一部破断
拡大平面図、第4図は本発明の他の実施例の断面図であ
る。
1・・・半導体チップ、1a・・・回路、2・・・導体
リボン、3・・・電極パッド、4・・・ボンディングワ
イヤ、5・・・銀ペースト、6・・・キャップ、11・
・・PGA基板、12・・・リボン用パッド、13・・
・ワイヤ用パッド、14・・・外部接続用ビン、21・
・・アルミナセラミック基板、22・・・リボン用パッ
ド、23・・・ワイヤ用パッド。
第1図
第2図
第3図FIG. 1 is a sectional view of an embodiment of the present invention, FIG. 2 is a perspective view of a semiconductor chip, FIG. 3 is a partially cutaway enlarged plan view of the semiconductor device of FIG. FIG. DESCRIPTION OF SYMBOLS 1... Semiconductor chip, 1a... Circuit, 2... Conductor ribbon, 3... Electrode pad, 4... Bonding wire, 5... Silver paste, 6... Cap, 11...
...PGA board, 12... Ribbon pad, 13...
・Wire pad, 14...External connection bin, 21・
...Alumina ceramic substrate, 22... Ribbon pad, 23... Wire pad. Figure 1 Figure 2 Figure 3
Claims (1)
体チップとを電気接続する半導体装置において、前記基
板はチップ搭載部の周囲にリボン用パッドを、その外側
にワイヤ用パッドを夫々多数個配設し、前記半導体チッ
プは周辺部に多数本の導体リボンを一体形成するととも
に、この導体リボンの内側に多数個の電極パッドを配設
し、この導体リボンを前記リボン用パッドに直接接続し
、電極パッドをボンディングワイヤにより前記ワイヤ用
パッドに接続したことを特徴とする半導体装置。1. In a semiconductor device in which a semiconductor chip is mounted on a substrate and the substrate and the semiconductor chip are electrically connected, the substrate has a plurality of ribbon pads around the chip mounting portion and a plurality of wire pads on the outside thereof. The semiconductor chip has a plurality of conductor ribbons integrally formed on its periphery, a plurality of electrode pads are arranged inside the conductor ribbon, and the conductor ribbons are directly connected to the ribbon pads. . A semiconductor device, characterized in that an electrode pad is connected to the wire pad by a bonding wire.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63053588A JPH01228155A (en) | 1988-03-09 | 1988-03-09 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63053588A JPH01228155A (en) | 1988-03-09 | 1988-03-09 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01228155A true JPH01228155A (en) | 1989-09-12 |
Family
ID=12947021
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63053588A Pending JPH01228155A (en) | 1988-03-09 | 1988-03-09 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01228155A (en) |
-
1988
- 1988-03-09 JP JP63053588A patent/JPH01228155A/en active Pending
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