JPH01230202A - Positive temperature coefficient thermistor material and its manufacturing method - Google Patents
Positive temperature coefficient thermistor material and its manufacturing methodInfo
- Publication number
- JPH01230202A JPH01230202A JP63054778A JP5477888A JPH01230202A JP H01230202 A JPH01230202 A JP H01230202A JP 63054778 A JP63054778 A JP 63054778A JP 5477888 A JP5477888 A JP 5477888A JP H01230202 A JPH01230202 A JP H01230202A
- Authority
- JP
- Japan
- Prior art keywords
- temperature coefficient
- positive temperature
- coefficient thermistor
- thermistor material
- oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/02—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient
- H01C7/022—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient mainly consisting of non-metallic substances
- H01C7/023—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient mainly consisting of non-metallic substances containing oxides or oxidic compounds, e.g. ferrites
- H01C7/025—Perovskites, e.g. titanates
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Ceramic Engineering (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Thermistors And Varistors (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は、特定の温度で抵抗値が急激に増大する正特性
サーミスタ材料およびその製造方法に関するものである
。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a positive temperature coefficient thermistor material whose resistance value increases rapidly at a specific temperature, and to a method for manufacturing the same.
（従来の技術）
チタン酸バリウムを主成分とし、ニオブあるいは希土類
元素などで半導体化された正特性サーミスタは１通常ス
イッチング温度と呼ばれる特定の温度以上で急激な抵抗
値増加を示す、この特性を利用して１発熱体として、あ
るいはテレビジョン受像機の消磁回路のスイッチング素
子などの広範な用途に用いられている。(Prior art) A positive temperature coefficient thermistor, which is made of barium titanate as a main component and made into a semiconductor with niobium or a rare earth element, takes advantage of this characteristic: 1) It exhibits a rapid increase in resistance above a certain temperature, usually called the switching temperature. It is used in a wide range of applications, such as as a heating element or as a switching element in the degaussing circuit of a television receiver.
この正特性サーミスタの基本特性としては、常温での抵
抗値、抵抗温度係数（α）、抵抗値変化幅があり、抵抗
温度係数（α）は次式により算出される。The basic characteristics of this positive temperature coefficient thermistor include a resistance value at room temperature, a resistance temperature coefficient (α), and a resistance value change range, and the resistance temperature coefficient (α) is calculated by the following equation.
ここで、Ｔ８は２５℃での抵抗値の２倍の抵抗値となる
温度で、スイッチング温度と呼ばれるものであり、Ｔ８
はＴ□より高い任意の温度（通常はＴ２はＴ、より５０
℃高い温度）、Ｒ１およびＲ２は各々温度Ｔ、、Ｔ、で
の抵抗値を示す、また、抵抗変化幅は最大抵抗値と最小
抵抗値の比で表わされる。Here, T8 is the temperature at which the resistance value is twice the resistance value at 25°C, which is called the switching temperature.
is any temperature higher than T□ (usually T2 is 50
℃ higher temperature), R1 and R2 represent the resistance values at temperatures T, , T, respectively, and the width of resistance change is expressed as the ratio of the maximum resistance value to the minimum resistance value.
上記スイッチング温度は、非導体化したチタン酸バリウ
ム（ＢａＴｉＯ３）では約１２０℃であるが、酸化鉛（
ｐｂｏ）を固溶させることにより、スイッチング温度を
高温側に移動できることが公知である。また、酸化スト
ロンチウム（ＳｒＯ） 、酸化錫（ＳｎＯ３）等を固溶
させることにより、スイッチング温度を低温側に移動で
きることも公知である。The above switching temperature is approximately 120°C for nonconductive barium titanate (BaTiO3), but for lead oxide (BaTiO3), the switching temperature is approximately 120°C.
It is known that the switching temperature can be moved to a higher temperature side by dissolving pbo). It is also known that the switching temperature can be moved to a lower temperature side by incorporating strontium oxide (SrO), tin oxide (SnO3), or the like as a solid solution.
また、チタン酸バリウム系半導体磁器の焼結性を向上さ
せ、磁器を緻密化するための鉱化剤の役割を果たすもの
として、二酸化珪素（Ｓｉｎ、 ）が添加される。In addition, silicon dioxide (Sin, ) is added to serve as a mineralizing agent to improve the sinterability of barium titanate-based semiconductor ceramics and to make the ceramics denser.
このＳｉｎ、は、チタン酸バリウム系半導体磁器の焼結
時に液相を形成して急激な粒成長を抑制する効果を持つ
と考えられており、したがって、均一に分散させるのが
好ましい。It is believed that this Sin forms a liquid phase during sintering of barium titanate-based semiconductor ceramics and has the effect of suppressing rapid grain growth, and therefore it is preferable to disperse it uniformly.
（発明が解決しようとする［ｇ）
ＳｉＯ□は、上記のように焼結性向上２粒成長抑制など
の重要な効果を持っているが、比重が軽く、かさ密度が
小さいこと、また、凝集しやすく、凝集体が固く容易に
つぶれないなどの性質を持っており、チタン酸バリウム
系半導体磁器中に均一に分散させるのは難しい欠点があ
った。(To be solved by the invention [g) SiO□ has important effects such as improving sinterability and suppressing the growth of two grains as described above, but it has a light specific gravity and a small bulk density, and also has a low agglomeration. It has the disadvantage that it is difficult to uniformly disperse it in barium titanate-based semiconductor porcelain because the aggregates are hard and do not collapse easily.
特に、ＰｂＯを含むチタン酸バリウム系半導体磁器では
、ＳｉＯ□の多い部分が絶縁性の黄色い斑点を形成する
ことが多く、磁器内部、磁器表面部における異常部分の
原因となり、破壊電圧の低下につながるものであった。In particular, in barium titanate-based semiconductor porcelain containing PbO, areas with a large amount of SiO□ often form insulating yellow spots, causing abnormal areas inside and on the porcelain surface, leading to a decrease in breakdown voltage. It was something.
本発明の目的は、従来の欠点を解消し、Ｓｉ成分の均一
分散を達成して、磁器の均質性を向上させることにより
、正特性サーミスタとしての特性、特に破壊電圧を向上
させることである
（課題を解決するための手段）
チタン酸バリウム、ニオブあるいは希土類元素などの半
導体化元素、酸化鉛およびメタ珪酸カルシウムを含むこ
とを特徴とする特性サーミスタ材料であり、化学式が（
Ｂａ０，７Ｐｂ、、２．）ＴｉＯ３＋０．０２ＣａＳｉ
Ｏ３＋ ０．０００４ＭｎＯ２ ＋ ０．００２Ｙ、Ｏ
，となるように、炭酸バリウム（ＢａＣＯ３） 、酸化
チタン（Ｔｉｏ２） を酸化鉛（ｐｂｏ） 、酸化イツ
トリウム（Ｙ、 ０． ） 、メタ珪酸カルシウム（Ｃ
ａＳｉＯ３）および二酸化マンガン（ＭｎＯ３）を坪量
し１通常の方法で混合、焼成するものである。The purpose of the present invention is to improve the characteristics of a positive temperature coefficient thermistor, especially its breakdown voltage, by eliminating the conventional drawbacks, achieving uniform dispersion of the Si component, and improving the homogeneity of the porcelain. Means for Solving the Problems) This is a characteristic thermistor material characterized by containing semiconductor elements such as barium titanate, niobium or rare earth elements, lead oxide and calcium metasilicate, and whose chemical formula is (
Ba0,7Pb, 2. )TiO3+0.02CaSi
O3+ 0.0004MnO2 + 0.002Y, O
, barium carbonate (BaCO3), titanium oxide (Tio2), lead oxide (pbo), yttrium oxide (Y, 0.), calcium metasilicate (C
aSiO3) and manganese dioxide (MnO3) are mixed and fired in a conventional manner.
（作 用）
上記構成により、ＳｉはＣａ５ｉＯ，として分散される
ため、５ｉｎ２の凝集性が改善され、Ｓｉがチタン酸バ
リウム系半導体磁器中に均一に分散されやすくなるもの
である。(Function) With the above configuration, Si is dispersed as Ca5iO, so that the cohesiveness of 5in2 is improved and Si is easily dispersed uniformly in the barium titanate semiconductor ceramic.
（実施例）
本実施例においては、化学式が（Ｂａ、、 ７Ｐｔｌｏ
、 ａｍ）ＴｉＯ３＋ ０．００２Ｙ２０３ ＋ ０．
０２ＣａＳｘＯ，＋ ０．０００４ＭｎＯ２となるよう
に、炭酸バリウム（ＢａＣＯ３） 、酸化チタン（Ｔｉ
％ ） 、ｆｔｌ化鉛（ｐｂｏ） 、酸化イツトリウム
（ＹｚＯｉ）ｔメタ珪酸カルシウム（ＣａＳｉＯ３）お
よび二酸化マンガン（ＭｎＯｚ ）を坪量し、通常の方
法で混合、仮焼、粉砕した粉体を形成し、１３５０℃で
焼成して直径１４■。(Example) In this example, the chemical formula is (Ba,, 7Ptlo
, am) TiO3+ 0.002Y203 + 0.
Barium carbonate (BaCO3), titanium oxide (Ti
%), ftl lead oxide (pbo), yttrium oxide (YzOi), calcium metasilicate (CaSiO3) and manganese dioxide (MnOz) to form a powder which is mixed, calcined and ground in a conventional manner; Fired at 1350℃ to a diameter of 14cm.
厚さ２＋ｍの円板状のセラミックを得、ニッケルメッキ
と銀よりなる電極を形成した。同時に、従来方法の比較
例として、化学式が
（Ｂａ、、 、 Ｐｂ、、 、、Ｃａｏ、 ａｍ２ ）
Ｔｉｏ、 ＋ ０．００２Ｙ、Ｏ，＋０．０２ＳｉＯ，
＋０．０００４ＭｎＯ２となるように、炭酸バリウム、
酸化鉛、炭酸カルシウム、酸化チタン、酸化イツトリウ
ム、二酸化珪素、二酸化マンガンを坪量し、上記と同様
にして同じ形状のセラミックを得、同様の電極を形成し
た。この２種類の試料の抵抗値、抵抗温度係数（α）、
破壊電圧を測定した。A disk-shaped ceramic having a thickness of 2+m was obtained, and an electrode made of nickel plating and silver was formed. At the same time, as a comparative example of the conventional method, the chemical formula is (Ba, , , Pb, , , Cao, am2)
Tio, + 0.002Y, O, + 0.02SiO,
barium carbonate, so that it becomes +0.0004MnO2,
Lead oxide, calcium carbonate, titanium oxide, yttrium oxide, silicon dioxide, and manganese dioxide were weighed, ceramics of the same shape were obtained in the same manner as above, and similar electrodes were formed. The resistance values of these two types of samples, the resistance temperature coefficient (α),
The breakdown voltage was measured.
また、電極を形成する前のセラミックスの状態で比重を
測定し、その結果を表に示す。In addition, the specific gravity of the ceramics before forming the electrodes was measured, and the results are shown in the table.
表
（発明の効果）
表より明らかな通り、本発明のものは従来方法により作
成したものに比べて破壊電圧が高く、正特性サーミスタ
としての特性が著しく向上しており、その実用上の効果
は大である。Table (Effects of the Invention) As is clear from the table, the breakdown voltage of the inventive thermistor is higher than that made by the conventional method, and the characteristics as a positive temperature coefficient thermistor are significantly improved. It's large.
Claims (2)
どの半導体化元素，酸化鉛およびメタ珪酸カルシウムを
含むことを特徴とする正特性サーミスタ材料。(1) A positive temperature coefficient thermistor material characterized by containing a semiconducting element such as barium titanate, niobium or a rare earth element, lead oxide and calcium metasilicate.
０）ＴｉＯ＿３＋０．０２ＣａＳｉＯ＿３＋０．０００
４ＭｎＯ＿２＋０．００２Ｙ＿２Ｏ＿３となるように、
炭酸バリウム（ＢａＣＯ＿３），酸化チタン（ＴｉＯ＿
２），酸化鉛（ＰｂＯ），酸化イットリウム（Ｙ＿２Ｏ
＿３），メタ珪酸カルシウム（ＣａＳｉＯ＿３）および
二酸化マンガン（ＭｎＯ＿２）を坪量し、通常の方法で
混合，焼成したことを特徴とする正特性サーミスタ材料
の製造方法。(2) The chemical formula is (Ba_0_._7Pb_0_._2_
0) TiO_3+0.02CaSiO_3+0.000
So that it becomes 4MnO_2+0.002Y_2O_3,
Barium carbonate (BaCO_3), titanium oxide (TiO_
2), lead oxide (PbO), yttrium oxide (Y_2O
_3) A method for producing a positive temperature coefficient thermistor material, characterized in that calcium metasilicate (CaSiO_3) and manganese dioxide (MnO_2) are weighed, mixed and fired in a conventional manner.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63054778A JPH01230202A (en) | 1988-03-10 | 1988-03-10 | Positive temperature coefficient thermistor material and its manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63054778A JPH01230202A (en) | 1988-03-10 | 1988-03-10 | Positive temperature coefficient thermistor material and its manufacturing method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01230202A true JPH01230202A (en) | 1989-09-13 |
Family
ID=12980228
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63054778A Pending JPH01230202A (en) | 1988-03-10 | 1988-03-10 | Positive temperature coefficient thermistor material and its manufacturing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01230202A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6740261B1 (en) | 1997-03-19 | 2004-05-25 | Denso Corporation | Wide-range type thermistor element and method of producing the same |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5220291A (en) * | 1975-08-08 | 1977-02-16 | Tdk Corp | Semiconductor porcelain composition |
-
1988
- 1988-03-10 JP JP63054778A patent/JPH01230202A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5220291A (en) * | 1975-08-08 | 1977-02-16 | Tdk Corp | Semiconductor porcelain composition |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6740261B1 (en) | 1997-03-19 | 2004-05-25 | Denso Corporation | Wide-range type thermistor element and method of producing the same |
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