JPH01244382A - Method for checking integrated circuit device - Google Patents

Abstract

PURPOSE:To check the temperature effects of P-N junction characteristics at normal temperature and at high temperature efficiently, by providing P-N junction characteristic checking steps for checking the P-N junction characteristics in an integrated circuit device before and after the function check of DC characteristics. CONSTITUTION:In P-N junction characteristic checks 4 and 19, a current is supplied from a current source 11 through an outer terminal 9 on the base side of the base and the emitter of a transistor 13 constituting an internal P-N junction. A voltage between the outer terminal 9 and an outer terminal 10 that is connected to the emitter side of the transistor 13 is measured with a voltmeter 12. Said P-N junction characteristic checking a steps are provided before and after a function check 5 for checking DC characteristics. When the checking of the P-N junction characteristics in a semiconductor circuit device is performed after the function check, the checking of the P-N junction characteristics at high temperature can be performed. Therefore, the more accurate P-N junction characteristic checking can be performed.

Description

DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention is directed to direct current (direct current) including PN junction characteristic testing of integrated circuit devices.
D C) The present invention relates to an integrated circuit device testing method for performing characteristic testing.

2. Description of the Related Art Conventionally, DC characteristics of integrated circuit devices have been tested using a configuration as shown in FIG. In FIG. 3, reference numeral 1 denotes an inspection process called contact inspection, which is used to check whether there is electrical connection between the integrated circuit device to be measured and the measurement system. Reference numeral 2 denotes an inspection step called short inspection, which is for checking for electrical shorts inside the integrated circuit under test or between external terminals, and is carried out following contact inspection 1. Reference numeral 3 denotes an inspection process called a leakage inspection, which is for checking the current for leakage in the internal PN junction that can be measured from an external terminal, and is carried out following the short-circuit inspection 2. 4 is an inspection step called a PN junction characteristic inspection, which checks the electrical characteristics of the internal PN junction that can be measured from an external terminal, and is carried out following the leakage inspection 3. Reference numeral 5 denotes a test step called a function test, which is for checking various characteristics of electrical operation inside the integrated circuit device under test, and is performed following the PN junction characteristic test 4.

Such a conventional method for testing an integrated circuit device will be described in more detail below. FIG. 4 is a circuit diagram of a PN junction characteristic test in the DC characteristic test. In FIG. 4, reference numeral 6 denotes an integrated circuit device under test for testing DC characteristics.
7 internal integrated circuit.

8 to 10 are external terminals of the integrated circuit device 7, 11 is a current source connected between external terminals 9 and 10 to supply current, and 12 is a voltmeter connected between external terminals 9 and 10.

Further, the integrated circuit 6 is composed of transistors 13, 14 and resistors 15-18.

A test of the PN junction characteristics of the integrated circuit configured as described above will be explained. When a current of several μA flows from the current source 11 to the external terminal 9, the current flows to the external terminal 10 through the base-emitter of the transistor 13 forming a PN junction. At this time, if the transistor 13 is normal, a potential difference of about 0.7 V is generated between the external terminals 9 and 10, and this is detected by the voltmeter 12.

Problems to be Solved by the Invention However, in the above-mentioned conventional testing method, the PN junction characteristic test is a test that checks only one point at room temperature, and the test at high temperature is not performed. The problem was that it was insufficient.

The present invention solves the above-mentioned conventional problems, and aims to provide a method for testing an integrated circuit device that can efficiently test temperature effects on PN junction characteristics at room temperature and high temperature. be.

Means for Solving the Problems A method for testing an integrated circuit device according to the present invention for solving the above problems supplies a current from one external terminal connected to an internal PN junction, and connects the external terminal and the internal PN junction. The PN junction characteristics within the integrated circuit device are tested by measuring the voltage between the PN and an external terminal connected to the other side of the PN.
The bonding characteristic inspection process is provided before and after the process of performing the function inspection of the DC characteristic inspection.

Effect: According to the above method, a PN junction characteristic inspection process at room temperature is performed before the function inspection process in the DC characteristic inspection, and an integrated circuit device that has been heated to a relatively high temperature after the function inspection process is completed is used. PN at high temperature
Since the process of testing junction characteristics is carried out, it is possible to efficiently test not only the PN junction characteristics at room temperature as in the conventional method, but also the temperature effect of the PN junction characteristics at room temperature and high temperature. PN junction characteristics can be inspected.

EXAMPLE Hereinafter, an example of the present invention will be described with reference to the drawings. It should be noted that the same reference numerals are given to those having the same functions and effects as those of the conventional example, and the explanation thereof will be omitted.

FIG. 1 is a block diagram of a DC characteristic testing process showing a method for testing an integrated circuit device according to an embodiment of the present invention.

In FIG. 1, numeral 19 is a PN junction characteristic inspection process after the function inspection 5 process, and in the function inspection 5 process, the integrated circuit device is heated to a relatively high temperature because it is tested in the actual operating state. Therefore, a new PN junction characteristic test 19 has been added for testing at high temperatures.

The method for testing such an integrated circuit device will be explained in more detail.

PN junction characteristic tests 4 and 19 are performed on internal PN junction characteristics as shown in Figure 4.
A current source 11 supplies current from the external terminal 9 on the base side of the base-emitter of the transistor 13 forming the junction,
The voltage between this external terminal 9 and the external terminal 10 connected to the emitter side of the transistor 13 is measured with a voltmeter 12, which is installed before and after the process of performing the function test of the DC characteristic test. It is something. In this way, by testing the PN junction characteristics in the integrated circuit device 7 even after the function test, it becomes possible to test the PN junction characteristics at high temperatures, and it is possible to test the PN junction characteristics with higher accuracy.

Figure 2 is a characteristic diagram explaining the temperature effect of the internal PN junction, which has a slope of about -2mV/'C and is
It can be seen that by checking the voltages v1 and v2 at the high temperature T2, a more accurate PN junction characteristic test can be performed.

Effects of the Invention As described above, according to the present invention, the PN junction characteristic testing step for testing the PN junction characteristics in the integrated circuit device is provided before and after the step of performing the function test of the DC characteristic test. The temperature effect on the PN junction characteristics of the integrated circuit device under test at room temperature and high temperature can be efficiently tested, and the PN junction characteristics can be tested with higher accuracy.

[Brief explanation of the drawing]

FIG. 1 is a block diagram of a DC characteristic testing process showing an integrated circuit device testing method according to an embodiment of the present invention, and FIG. 2 is a diagram illustrating temperature effects on PN junction characteristics in the same integrated circuit device testing method. Figure 3 shows the conventional testing method for integrated circuit devices.
FIG. 4, which is a block diagram of the C characteristic testing process, is a circuit diagram of the PN junction characteristic test in the DC characteristic test. 1...Contact inspection, 2...Short inspection, 3.
...Leak test, 4,18...PN junction characteristic test, 5
...Functional inspection, 7...Integrated circuit device, 9
．． 10... External terminal, 11... Current source, 12...
Voltmeter, 13...transistor. Agent Yoshihiro Morimoto Figure 1 Figure 2 r/V'2 ・Ding ('C)

Claims (1)

[Claims] 1. By supplying current from one external terminal connected to the internal PN junction and measuring the voltage between the external terminal and the external terminal connected to the other internal PN junction,
A method for testing an integrated circuit device, wherein a PN junction characteristic testing step for testing PN junction characteristics in the integrated circuit device is provided before and after a step for performing a function test for DC characteristic testing.