JPH0124883Y2 - - Google Patents
Info
- Publication number
- JPH0124883Y2 JPH0124883Y2 JP10035383U JP10035383U JPH0124883Y2 JP H0124883 Y2 JPH0124883 Y2 JP H0124883Y2 JP 10035383 U JP10035383 U JP 10035383U JP 10035383 U JP10035383 U JP 10035383U JP H0124883 Y2 JPH0124883 Y2 JP H0124883Y2
- Authority
- JP
- Japan
- Prior art keywords
- varistor
- ceramic varistor
- view
- electrodes
- ceramic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000919 ceramic Substances 0.000 description 7
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical group [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 6
- 238000010521 absorption reaction Methods 0.000 description 3
- 239000011787 zinc oxide Substances 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
Landscapes
- Structures For Mounting Electric Components On Printed Circuit Boards (AREA)
- Emergency Protection Circuit Devices (AREA)
- Thermistors And Varistors (AREA)
Description
【考案の詳細な説明】
産業上の利用分野
この考案はセラミツクバリスタ、特に小形でプ
リント配線板に直接装着し得るリードレスのサー
ジ電圧吸収素子に関する。[Detailed Description of the Invention] Industrial Application Field This invention relates to a ceramic varistor, and particularly to a small leadless surge voltage absorbing element that can be directly attached to a printed wiring board.
従来例の構成とその問題点
電子機器の小形・軽量・薄形化指向に対応して
構成部品の高密度実装が行なわれて、高密度実装
を容易にするために、各種部品のチツプ化が進展
している。サージ電圧吸収用素子についてもリー
ド端子のないチツプ素子が望まれている。Conventional configurations and their problems In response to the trend toward smaller, lighter, and thinner electronic devices, component parts have been mounted in high density.In order to facilitate high-density mounting, various parts have been made into chips. Progress is being made. Chip elements without lead terminals are also desired for surge voltage absorbing elements.
第1図aは従来のバリスタの斜視図、第1図b
はその断面図である。同図に示すバリスタは酸化
亜鉛などを主成分とする角板状の電圧非直線抵抗
素子1に端面を介して、対面の一部まで連接する
ように設けられた電極2を形成したものである。
この場合、第1図における1>t1の関係を成立
する必要がある。つまり、これが逆の関係になつ
た場合はバリスタ特性は1間のみしか機能しな
い結果になり、サージ吸収能力が低くなる。 Figure 1a is a perspective view of a conventional varistor, Figure 1b
is a sectional view thereof. The varistor shown in the figure is a rectangular plate-shaped voltage nonlinear resistance element 1 whose main component is zinc oxide or the like, and an electrode 2 formed thereon so as to be connected to a part of the opposite side through the end face. .
In this case, the relationship 1 > t 1 in FIG. 1 must be established. In other words, if this relationship were reversed, the varistor characteristics would function only between 1 and the surge absorption capacity would decrease.
ところで、酸化亜鉛を主成分とする焼結体のセ
ラミツクバリスタは、優れた非直線性とサージ吸
収性能を有するところから、サージ電圧吸収用素
子として広く実用されているが、焼結体が脆く、
チツプ部品とする場合は実用に則した厚みを確保
しなければならない。しかし、第1図bにおける
1>t1の関係、即ち同一面で相対する電極の間
隔を素子の厚みよりも大きくする必要があり、結
果として焼結体がバリスタとして機能する有効面
積は少なくなる。これはリードレスのチツプ素子
が小形で高密度実装を意図することから、その目
的を十分に果しているとはいえない。 Incidentally, ceramic varistors, which are sintered bodies containing zinc oxide as a main component, are widely used as surge voltage absorbing elements because of their excellent nonlinearity and surge absorption performance, but the sintered bodies are brittle and
When using chip parts, it is necessary to ensure a thickness suitable for practical use. However, in Fig. 1b
1 > t 1 , that is, the distance between opposing electrodes on the same plane needs to be larger than the thickness of the element, and as a result, the effective area of the sintered body to function as a varistor decreases. Since leadless chip elements are small and intended for high-density packaging, it cannot be said that the purpose is fully achieved.
考案の目的
本考案は従来例の問題点に鑑み、素子の面積を
より有効に活用し、より小形で同等の性能を確保
した、小形高性能のチツプ状セラミツクバリスタ
を得るものである。Purpose of the invention In view of the problems of the prior art, the present invention is to obtain a small, high-performance chip-shaped ceramic varistor that more effectively utilizes the area of the element and secures the same performance in a smaller size.
考案の構成
本考案は、角板状のセラミツクバリスタ素子の
相対向する面に電極を配設し、かつ同一面で相対
する電極間部分に溝を形成し、前記同一面での電
極間隔をセラミツクバリスタ素子の厚みより小さ
くしたものである。Structure of the invention In the present invention, electrodes are disposed on opposing surfaces of a square plate-shaped ceramic varistor element, grooves are formed between the electrodes facing each other on the same surface, and the spacing between the electrodes on the same surface is adjusted using the ceramic varistor element. It is made smaller than the thickness of the varistor element.
実施例の説明
以下本考案の一実施例について、第2図a,b
を参照して説明する。第2図aは本考案に係るバ
リスタの斜視図、第2図bはその断面図で、第1
図と同一部分は同一番号を付する。まず、本考案
では酸化亜鉛に、ビスマス,コバルト、マンガ
ン、アンチモンなどの酸化物を微量添加し、混合
し、油圧成形して1100〜1400℃で焼成し、切断加
工して所定厚みの角板状素子1を得る。この素子
1の表面及び裏面に第2図に示す如く一端部を少
し残して表裏が対称になる位置に溝3を設けた。
溝3はダイヤモンド刃を高速回転させて切削し設
けた。このようにして得た素子1の表面および裏
面に、銀ペーストを所定のパターンで印刷し、ま
た端面には銀ペーストを転写法によつて塗着して
電極2を得た。これを700〜900℃で熱処理して第
2図に示す如くのチツプ状セラミツクバリスタを
得た。この時の素子1の厚みt1は1.0mmで溝3の
巾0.5mm、溝3の深さ0.5mmであつた。この素子1
に所定電圧を印加した時の洩れ電流は、素子厚み
t1の特性に相当するものであつた。またインパル
スを加えた時も溝3(相対する電極間)で放電す
ることなく、負荷を増大した時は素子部で破壊し
た。これは、表裏面の対向電極2間でバリスタが
機能していることを証明するものである。DESCRIPTION OF THE EMBODIMENT The following is an example of the present invention as shown in Figures 2a and b.
Explain with reference to. FIG. 2a is a perspective view of the varistor according to the present invention, and FIG. 2b is a sectional view thereof.
Parts that are the same as those in the figures are given the same numbers. First, in this invention, small amounts of oxides such as bismuth, cobalt, manganese, and antimony are added to zinc oxide, mixed, hydraulically formed, fired at 1,100 to 1,400℃, and cut into square plates of a predetermined thickness. Element 1 is obtained. As shown in FIG. 2, grooves 3 were provided on the front and back surfaces of this element 1 at positions where the front and back sides were symmetrical, leaving a small portion at one end.
The groove 3 was cut by rotating a diamond blade at high speed. Silver paste was printed in a predetermined pattern on the front and back surfaces of the element 1 thus obtained, and the silver paste was applied to the end surfaces by a transfer method to obtain electrodes 2. This was heat-treated at 700-900°C to obtain a chip-shaped ceramic varistor as shown in FIG. At this time, the thickness t1 of the element 1 was 1.0 mm, the width of the groove 3 was 0.5 mm, and the depth of the groove 3 was 0.5 mm. This element 1
The leakage current when a specified voltage is applied to the element thickness
The characteristics corresponded to those of t1 . Further, even when an impulse was applied, there was no discharge in the groove 3 (between opposing electrodes), but when the load was increased, the element was destroyed. This proves that the varistor is functioning between the opposing electrodes 2 on the front and back surfaces.
また実用性能を鑑みて、溝3をエポキシ樹脂で
埋めることによつて素子の抗折強度や耐候的性能
も向上した。 Furthermore, in view of practical performance, the flexural strength and weather resistance of the element were improved by filling the grooves 3 with epoxy resin.
考案の効果
上記詳述した通り、本考案によれば角板状の素
子面積を有効に活用し、より小形のリードレスチ
ツプバリスタ(サージ吸収素子)を実用に供する
ことができる。Effects of the Invention As detailed above, according to the present invention, the square plate-like element area can be effectively utilized and a smaller leadless chip varistor (surge absorption element) can be put to practical use.
第1図aは従来例の斜視図、第1図bはその断
面図、第2図aは本考案実施例の斜視図、第2図
bはその断面図である。
1……セラミツクバリスタ素子、2……電極、
3……溝。
FIG. 1a is a perspective view of a conventional example, FIG. 1b is a sectional view thereof, FIG. 2a is a perspective view of an embodiment of the present invention, and FIG. 2b is a sectional view thereof. 1... Ceramic varistor element, 2... Electrode,
3...Groove.
Claims (1)
称になる位置に溝が設けられた角板状のセラミ
ツクバリスタ素子の前記表裏面及びそれに連接
する端面に前記溝の部分を除いて電極が形成さ
れ、かつ前記表裏面に形成された前記溝の巾が
前記セラミツクバリスタ素子の厚みよりも小さ
いセラミツクバリスタ。 (2) セラミツクバリスタ素子の表面及び裏面に設
けられた溝の部分が絶縁物で充填されてなる実
用新案登録請求の範囲第1項記載のセラミツク
バリスタ。[Claims for Utility Model Registration] (1) A square plate-shaped ceramic varistor element having grooves at positions where the front and back sides are symmetrical with one end left slightly on the front and back sides and the end faces connected thereto. A ceramic varistor, wherein electrodes are formed except for the groove portion, and the width of the groove formed on the front and back surfaces is smaller than the thickness of the ceramic varistor element. (2) The ceramic varistor according to claim 1, wherein the grooves provided on the front and back surfaces of the ceramic varistor element are filled with an insulating material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10035383U JPS609202U (en) | 1983-06-28 | 1983-06-28 | ceramic barista |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10035383U JPS609202U (en) | 1983-06-28 | 1983-06-28 | ceramic barista |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS609202U JPS609202U (en) | 1985-01-22 |
| JPH0124883Y2 true JPH0124883Y2 (en) | 1989-07-27 |
Family
ID=30237434
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10035383U Granted JPS609202U (en) | 1983-06-28 | 1983-06-28 | ceramic barista |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS609202U (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0547446Y2 (en) * | 1986-10-27 | 1993-12-14 | ||
| JP2012151243A (en) * | 2011-01-18 | 2012-08-09 | Murata Mfg Co Ltd | Multilayer ceramic substrate |
-
1983
- 1983-06-28 JP JP10035383U patent/JPS609202U/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS609202U (en) | 1985-01-22 |
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