JPH0514103A - Noise filter - Google Patents
Noise filterInfo
- Publication number
- JPH0514103A JPH0514103A JP3183826A JP18382691A JPH0514103A JP H0514103 A JPH0514103 A JP H0514103A JP 3183826 A JP3183826 A JP 3183826A JP 18382691 A JP18382691 A JP 18382691A JP H0514103 A JPH0514103 A JP H0514103A
- Authority
- JP
- Japan
- Prior art keywords
- sintered body
- electrode
- face
- electrodes
- noise filter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000011521 glass Substances 0.000 claims description 7
- 239000004065 semiconductor Substances 0.000 abstract description 13
- 230000007257 malfunction Effects 0.000 abstract description 9
- 230000006378 damage Effects 0.000 abstract description 8
- 230000001629 suppression Effects 0.000 abstract description 5
- 239000000919 ceramic Substances 0.000 description 8
- 239000003990 capacitor Substances 0.000 description 7
- 230000015556 catabolic process Effects 0.000 description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 229910015902 Bi 2 O 3 Inorganic materials 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 229910001252 Pd alloy Inorganic materials 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
Landscapes
- Thermistors And Varistors (AREA)
- Filters And Equalizers (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、電圧非直線特性を利用
して高電圧パルスを吸収するようにしたノイズフィルタ
に関し、特に該ノイズフィルタの電圧抑制能力を向上し
て高電圧パルスによる半導体部品の破壊，誤動作を確実
に防止できるようにした構造に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a noise filter adapted to absorb a high voltage pulse by utilizing a voltage non-linear characteristic, and more particularly to a semiconductor component using the high voltage pulse by improving the voltage suppressing ability of the noise filter. It is related to the structure that can surely prevent the destruction and malfunction of the.
【０００２】[0002]
【従来の技術】近年、情報関連機器における高速化，省
電力化が要求されるなかで、ＩＣ，ＬＳＩをはじめとす
る半導体部品では高速処理，高速駆動，低消費電力化が
急速に進んでいる。また上記情報関連機器においては、
静電気サージ等の高電圧パルスの侵入によってデジタル
ＩＣ，ＬＳＩの誤動作，破壊が生じるおそれがある。こ
のような高電圧パルスの侵入経路は電源部分，あるいは
信号ライン部分が多いことから、この電源部，信号ライ
ンの入出力部にノイズフィルタを接続して上記高電圧パ
ルスを吸収するようにしている。このようなノイズフィ
ルタとして、従来、コンデンサ素子，インダクタ素子，
コンデンサとインダクタとの複合素子，あるいはバリス
タ素子の４系統の種類が用いられている。例えば、信号
ライン用ノイズフィルタとして、数ｐＦ〜数100 ｐＦの
コンデンサチップやコンデンサを複数個備えたコンデン
サアレイが用いられている。しかし、このようなコンデ
ンサを用いたノイズフィルタでは、静電気サージのよう
な高電圧パルスを吸収することは困難であり、機器の誤
動作や破壊を確実に防止することができない。これはイ
ンダクタ型ノイズフィルタについても同様のことがいえ
る。ここで、上記信号ラインにはツェナーダイオードが
一般に用いられているが、このツェナーダイオードは方
向性を有していることから１ライン当たりに２個必要で
あり、しかも動作後の回復のロスタイムに問題がある。
このような信号ラインに用いるノイズフィルタには、静
電容量が数100pF 以下であること、また応答速度能力を
含めた電圧抑制能力に優れていることが重要であり、こ
のようなノイズフィルタとして、電圧非直線特性を有す
るＺｎＯ系バリスタが採用されている。このバリスタは
低電圧，低容量であることから、上記高電圧パルスを吸
収するノイズフィルタとして適している。2. Description of the Related Art In recent years, with the demand for high speed and power saving in information related equipment, high speed processing, high speed driving, and low power consumption are rapidly progressing in semiconductor parts such as IC and LSI. . In addition, in the above information-related equipment,
Intrusion of high voltage pulse such as electrostatic surge may cause malfunction or destruction of the digital IC or LSI. Since there are many power supply parts or signal line parts in the intrusion route of such a high voltage pulse, a noise filter is connected to the input / output parts of the power supply part and the signal line to absorb the high voltage pulse. . As such a noise filter, conventionally, a capacitor element, an inductor element,
Four types of composite elements, which are capacitors and inductors, or varistor elements are used. For example, a capacitor array having a plurality of capacitor chips of several pF to several 100 pF or a capacitor is used as a noise filter for a signal line. However, it is difficult for a noise filter using such a capacitor to absorb a high voltage pulse such as an electrostatic surge, and it is not possible to reliably prevent malfunction or destruction of the device. The same applies to the inductor type noise filter. Here, a Zener diode is generally used for the signal line, but two Zener diodes are required for each line because of their directivity, and there is a problem in the recovery loss time after operation. There is.
It is important that the noise filter used for such a signal line has an electrostatic capacity of several 100 pF or less and that it has excellent voltage suppression capability including response speed capability. A ZnO type varistor having a voltage non-linear characteristic is adopted. Since this varistor has a low voltage and a low capacity, it is suitable as a noise filter that absorbs the high voltage pulse.
【０００３】[0003]
【発明が解決しようとする課題】しかしながら、上記従
来の電圧非直線特性を有するバリスタを用いたノイズフ
ィルタでは、コンデンサやインダクタに比べて電気耐量
に優れているものの、該ノイズフィルタ単独では高電圧
パルスからＩＣ，ＬＳＩの半導体部品を保護しきれない
場合がある。これは半導体部品の破壊電圧がバリスタの
サージ吸収電圧よりも小さい場合があることから、この
電圧抑制能力の向上が要請されている。本発明は上記従
来の状況に鑑みてなされたもので、電圧抑制能力を向上
して高電圧パルスによる半導体部品の破壊，誤動作を確
実に防止できるノイズフィルタを提供することを目的と
している。However, although the noise filter using the conventional varistor having the voltage non-linear characteristic is superior in electric withstanding capability to the capacitor and the inductor, the noise filter alone is not suitable for high voltage pulse. In some cases, it may not be possible to completely protect semiconductor parts such as IC and LSI. This is because the breakdown voltage of the semiconductor component may be smaller than the surge absorption voltage of the varistor, so that improvement of this voltage suppression capability is required. The present invention has been made in view of the above conventional circumstances, and an object of the present invention is to provide a noise filter that can improve the voltage suppression capability and reliably prevent the destruction and malfunction of semiconductor components due to high voltage pulses.
【０００４】[0004]
【課題を解決するための手段】請求項１の発明は、電圧
非直線特性を有する焼結体の両端面に端面電極を形成す
るとともに、両側面の中央部に側面電極を形成し、上記
焼結体の内部に少なくとも１つの内部電極を配設すると
ともに、該内部電極の一端面を上記一方の端面電極に接
続し、上記焼結体の内部に上記内部電極と異なる平面上
で交差する共通電極を配設し、該共通電極の両端面を上
記側面電極に接続し、さらに上記焼結体の表面に上記両
端面電極に接続される抵抗膜を形成したことを特徴とす
るノイズフィルタである。また請求項２の発明は、上記
焼結体の端面電極，側面電極を除く外表面にガラス膜を
形成したことを特徴としている。According to a first aspect of the present invention, an end face electrode is formed on both end faces of a sintered body having a voltage non-linear characteristic, and side face electrodes are formed on the center portions of both side faces, and the above-mentioned firing is performed. A common structure in which at least one internal electrode is provided inside the bonded body, one end surface of the internal electrode is connected to the one end surface electrode, and the inside of the sintered body intersects with the internal electrode on a different plane. A noise filter characterized in that electrodes are provided, both end surfaces of the common electrode are connected to the side surface electrodes, and a resistance film connected to the both end surface electrodes is formed on the surface of the sintered body. . The invention of claim 2 is characterized in that a glass film is formed on the outer surface of the sintered body excluding the end face electrodes and the side face electrodes.
【０００５】[0005]
【作用】本発明に係るノイズフィルタによれば、焼結体
の内部にそれぞれ異なる平面上で交差する内部電極，共
通電極を配設し、上記焼結体の表面に両端面電極に接続
される抵抗膜を付加したので、信号ラインに侵入した高
電圧パルスは上記内部電極と共通電極とで挟まれたバリ
スタ部で吸収される。この時のサージ吸収電圧が半導体
部品の破壊電圧より大きい場合は上記抵抗膜により抑制
されることとなる。即ち、半導体部品の破壊電圧より大
きなサージ電圧が印加されても抵抗膜によって破壊電流
以下に抑制でき、その結果半導体部品の誤動作や破壊を
確実に防止することができる。また請求項２の発明で
は、焼結体の外表面にガラス膜を形成したので耐湿性を
向上できるとともに、漏れ電流を低減できる。According to the noise filter of the present invention, the internal electrode and the common electrode intersecting on different planes are arranged inside the sintered body, and both surface electrodes are connected to the surface of the sintered body. Since the resistance film is added, the high voltage pulse that has entered the signal line is absorbed by the varistor portion sandwiched between the internal electrode and the common electrode. If the surge absorption voltage at this time is higher than the breakdown voltage of the semiconductor component, it will be suppressed by the resistance film. That is, even if a surge voltage higher than the breakdown voltage of the semiconductor component is applied, the resistance film can suppress the breakdown current or less, and as a result, malfunction or breakdown of the semiconductor component can be reliably prevented. Further, in the invention of claim 2, since the glass film is formed on the outer surface of the sintered body, the moisture resistance can be improved and the leakage current can be reduced.
【０００６】[0006]
【実施例】以下、本発明の実施例を図について説明す
る。図１ないし図４は本発明の一実施例によるノイズフ
ィルタを説明するための図である。図において、１は本
実施例の電圧非直線特性を有するノイズフィルタであ
る。このノイズフィルタ１は、ＺｎＯを主成分とする直
方体状のセラミックス焼結体２の左, 右端面２ａ，２ｂ
にＡｇ−Ｐｄ合金からなる端面電極３，３を形成すると
ともに、両側面２ｃ，２ｄの中央部に側面電極４，４を
形成して構成されている。また、上記焼結体２の内部に
は該焼結体２の右側の端面２ａから中央部に帯状に延び
る一対の内部電極５，５が埋設されている。この各内部
電極５の一端面５ａは上記焼結体２の左側端面２ａに露
出して端面電極３に接続されており、各内部電極５の他
端面５ｂは焼結体２の中央部に位置している。Embodiments of the present invention will be described below with reference to the drawings. 1 to 4 are views for explaining a noise filter according to an embodiment of the present invention. In the figure, reference numeral 1 is a noise filter having the voltage non-linear characteristic of the present embodiment. The noise filter 1 is composed of a rectangular parallelepiped ceramic sintered body 2 containing ZnO as a main component, and has left and right end faces 2a, 2b.
The end face electrodes 3 and 3 made of an Ag-Pd alloy are formed on the side faces, and the side face electrodes 4 and 4 are formed on the central portions of the side faces 2c and 2d. Further, inside the sintered body 2, a pair of internal electrodes 5 and 5 extending in the shape of a strip from the right end face 2a of the sintered body 2 to the center are embedded. One end surface 5a of each internal electrode 5 is exposed at the left end surface 2a of the sintered body 2 and connected to the end surface electrode 3, and the other end surface 5b of each internal electrode 5 is located at the center of the sintered body 2. is doing.
【０００７】また、上記焼結体２の内部電極５の先端部
の上部，下部には、該内部電極５と異なる平面上で、つ
まり間隔をあけて交差する共通電極６，６が埋設されて
おり、該各共通電極６両端面６ａ，６ｂは上記焼結体２
の両側面２ｃ，２ｄに露出して上記側面電極４に接続さ
れている。また上記各共通電極６と内部電極３とに挟ま
れた部分が電圧非直線特性を発現するバリスタ部Ｚとな
っている。さらに上記焼結体２の端面電極３，側面電極
４を除く外表面にはガラス膜７が被覆形成されている。Further, common electrodes 6 and 6 are embedded in the upper and lower portions of the tip of the internal electrode 5 of the sintered body 2 on a plane different from that of the internal electrode 5, that is, intersecting at intervals. And both end faces 6a and 6b of the common electrode 6 are formed on the sintered body 2
It is exposed on both side surfaces 2c and 2d and is connected to the side surface electrode 4. Further, the portion sandwiched between each of the common electrodes 6 and the internal electrode 3 serves as a varistor portion Z that exhibits a voltage non-linear characteristic. Further, a glass film 7 is formed on the outer surface of the sintered body 2 excluding the end face electrodes 3 and the side face electrodes 4.
【０００８】そして、上記焼結体２の上面には該焼結体
２の両端面２ａ，２ｂ方向に延びる帯状の抵抗膜８が形
成されており、該抵抗膜８の両端は上記端面電極３に接
続されている。上記抵抗膜８はカーボンペーストを塗布
した後、焼き付けて形成されものであり、該抵抗膜８は
これの厚さ，幅を選定することにより高電圧パルスに応
じた抵抗値に設定されている。On the upper surface of the sintered body 2, there are formed strip-shaped resistance films 8 extending in the direction of both end surfaces 2a and 2b of the sintered body 2, and both ends of the resistance film 8 are the end surface electrodes 3 It is connected to the. The resistance film 8 is formed by applying carbon paste and then baking it, and the resistance film 8 is set to a resistance value corresponding to a high voltage pulse by selecting the thickness and width thereof.
【０００９】次に本実施例のノイズフィルタ１の製造方
法について説明する。まず、ＺｎＯ(97.8 mol ％) を主
成分とし、これにＢｉ2 Ｏ3(0.5mol％),ＭｎＯ(0.5mol
％),Ｃｏ2 Ｏ3(0.5 mol ％),Ｓｂ2 Ｏ3(0.7 mol ％) を
混合してセラミックス材料を形成し、これに有機バイン
ダーとアルコールを混合してスラリーを形成する。この
スラリーから所定厚さのグリーンシートを形成し、この
グリーンシートを所定寸法の矩形状に切断して、図４に
示すような多数のセラミックスシート９を形成する。次
に、上記２枚のセラミックスシート９の上面にＡｇ−Ｐ
ｄからなるペーストを印刷して内部電極５を形成する。
この場合、該内部電極５の一端面５ａがセラミックスシ
ート９の一端縁に位置し、他端面５ｂが該シート９の中
央部に位置するよう形成する。また、上記他の２枚のセ
ラミックスシート９の上面にＡｇ−Ｐｄからなるペース
トを印刷して共通電極６を形成する。この場合は、共通
電極６の両端面６ａ，６ｂが該シート９の両端縁に位置
するよう形成する。次に、図３に示すように、上記内部
電極５同士がセラミックスシート９を挟んで対向するよ
う重ね、これの上面，下面に共通電極６が形成されたセ
ラミックスシート９を重ねる。この場合、共通電極６と
内部電極５とが交差するように重ねる。そしてこれの上
面，下面にダミーとしてのセラミックスシート９を重
ね、これをプレスで圧着して積層体を形成する。次い
で、この積層体を高温で焼成して焼結体２を得る。次
に、上記焼結体２の両端面２ａ，２ｂ及び両側面２ｃ，
２ｄの中央部にＡｇ−Ｐｄからなるペーストを塗布した
後、焼き付けて端面電極３，側面電極４を形成する。こ
れにより上記端面電極３に内部電極の一端面５ａが接続
されるとともに、側面電極４に共通電極６の両端面６
ａ，６ｂが接続される。次いで、上記焼結体２の上面の
左, 右端面２ａ，２ｂ間にカーボンペーストを塗布した
後、低温で焼き付けて抵抗膜８を形成し、該抵抗膜８の
両端を端面電極３に接続する。最後に、上記焼結体２の
各端面電極３，側面電極４を除く外表面にガラスペース
トを塗布してガラス膜７を形成する。これにより本実施
例のノイズフィルタ１が製造される。Next, a method of manufacturing the noise filter 1 of this embodiment will be described. First, ZnO (97.8 mol%) was the main component, and Bi 2 O 3 (0.5 mol%), MnO (0.5 mol%)
%), Co 2 O 3 (0.5 mol%) and Sb 2 O 3 (0.7 mol%) are mixed to form a ceramic material, and an organic binder and alcohol are mixed to form a slurry. A green sheet having a predetermined thickness is formed from this slurry, and the green sheet is cut into a rectangular shape having a predetermined size to form a large number of ceramic sheets 9 as shown in FIG. Next, Ag-P is formed on the upper surfaces of the two ceramic sheets 9.
The internal electrode 5 is formed by printing a paste of d.
In this case, one end surface 5a of the internal electrode 5 is formed at one end edge of the ceramic sheet 9, and the other end surface 5b is formed at the central portion of the sheet 9. Further, a paste made of Ag—Pd is printed on the upper surfaces of the other two ceramic sheets 9 to form the common electrode 6. In this case, both end faces 6a and 6b of the common electrode 6 are formed so as to be located at both end edges of the sheet 9. Next, as shown in FIG. 3, the internal electrodes 5 are stacked so as to face each other with the ceramic sheet 9 sandwiched therebetween, and the ceramic sheet 9 having the common electrode 6 formed on the upper and lower surfaces thereof is stacked. In this case, the common electrode 6 and the internal electrode 5 are overlapped so as to intersect with each other. Then, a ceramic sheet 9 as a dummy is superposed on the upper surface and the lower surface thereof, and is pressed by a press to form a laminated body. Next, this laminated body is fired at a high temperature to obtain a sintered body 2. Next, both end faces 2a, 2b and both side faces 2c, of the sintered body 2 are
A paste made of Ag-Pd is applied to the central portion of 2d and then baked to form the end face electrode 3 and the side face electrode 4. As a result, one end face 5a of the internal electrode is connected to the end face electrode 3, and both end faces 6 of the common electrode 6 are connected to the side face electrode 4.
a and 6b are connected. Next, a carbon paste is applied between the left and right end surfaces 2a and 2b of the upper surface of the sintered body 2 and baked at a low temperature to form a resistance film 8, and both ends of the resistance film 8 are connected to the end surface electrodes 3. . Finally, a glass paste is applied to the outer surface of the sintered body 2 excluding the end surface electrodes 3 and the side surface electrodes 4 to form a glass film 7. As a result, the noise filter 1 of this embodiment is manufactured.
【００１０】次に本実施例の作用効果について説明す
る。本実施例のノイズフィルタ１は、情報関連機器にお
ける電源部，信号ラインから侵入する高電圧パルスを吸
収する機能を有している。即ち、図４に示すように、上
記ノイズフィルタ１の入力側の端面電極３から侵入した
高電圧パルスＡは、バリスタ部Ｚによりエネルギーが吸
収されるとともに側面電極４から放出される。この場
合、バリスタ部Ｚの電圧抑制分の電圧が残留するが、こ
の時の出力側の端面電極３の電位は、該端面電極３に接
続された回路インピーダンス及び上記抵抗膜８によって
分圧されることとなり、バリスタ部Ｚの抑制電圧より小
さくなる。ここで、上記ノイズフィルタ１を信号ライン
に用いる場合，上記抵抗膜８は信号損失，入出力インピ
ーダンスを考慮した上で決定することとなる。Next, the function and effect of this embodiment will be described. The noise filter 1 of this embodiment has a function of absorbing a high voltage pulse that enters from a power supply section or a signal line in an information-related device. That is, as shown in FIG. 4, the high-voltage pulse A that has entered from the input-side end surface electrode 3 of the noise filter 1 is absorbed in energy by the varistor portion Z and is emitted from the side surface electrode 4. In this case, the voltage for suppressing the voltage of the varistor portion Z remains, but the potential of the end face electrode 3 on the output side at this time is divided by the circuit impedance connected to the end face electrode 3 and the resistance film 8. This is smaller than the suppression voltage of the varistor part Z. Here, when the noise filter 1 is used in the signal line, the resistance film 8 is determined in consideration of signal loss and input / output impedance.
【００１１】このように本実施例によれば、焼結体２の
内部に内部電極５を埋設するとともに、該内部電極５と
異なる平面上で交差する共通電極６を形成し、上記焼結
体２の表面に抵抗膜８を形成するとともに、該抵抗膜８
の両端を端面電極３に接続したので、上述のように半導
体部品の破壊電圧より大きいサージ電圧が印加されても
抵抗膜８で抑制することができ、その結果ＩＣ，ＬＳＩ
等の半導体部品の誤動作や破壊を確実に回避できる。ま
た焼結体２の外表面にガラス膜７を形成したので、耐湿
性を向上できるとともに、漏れ電流を低減できる。ま
た、本実施例では、抵抗膜８の厚さ，幅等を変えること
により、ＥＳＤサーシに応じた抵抗値を容易に，かつ正
確に設定することができ、それだけコストの上昇を抑制
できる。さらに、本実施例では、バリスタ部Ｚと抵抗膜
８とを一体に内蔵した複合素子として用いることがで
き、小型化に対応できる。なお、上記実施例では、抵抗
膜８にカーボンペーストを採用した場合を例にとって説
明したが、本発明はこれに限られるものではない。As described above, according to this embodiment, the internal electrode 5 is embedded in the sintered body 2 and the common electrode 6 intersecting with the internal electrode 5 on a different plane is formed. The resistance film 8 is formed on the surface of the
Since both ends of are connected to the end face electrodes 3, even if a surge voltage larger than the breakdown voltage of the semiconductor component is applied as described above, it can be suppressed by the resistance film 8, and as a result, IC, LSI
It is possible to surely avoid malfunction or destruction of semiconductor parts such as. Further, since the glass film 7 is formed on the outer surface of the sintered body 2, the moisture resistance can be improved and the leakage current can be reduced. Further, in the present embodiment, by changing the thickness, width, etc. of the resistance film 8, the resistance value according to the ESD sirce can be set easily and accurately, and the cost increase can be suppressed accordingly. Further, in the present embodiment, the varistor portion Z and the resistance film 8 can be used as a composite element integrally built in, and miniaturization can be dealt with. In addition, in the above-mentioned embodiment, the case where the carbon paste is used for the resistance film 8 has been described as an example, but the present invention is not limited to this.
【００１２】図５及び図６は上記実施例の変形例を示す
図であり、図中、図１と同一符号はと同一又は相当部分
を示す。このノイズフィルタ１０は、焼結体２の内部に
一対の内部電極５を間をあけて２組埋設し、各内部電極
５の一端面５ａを一方の端面電極３に接続するととも
に、各内部電極５の上部，下部に共通電極６を配設して
構成されている。また、上記焼結体２の上面には抵抗膜
８が形成されており、該抵抗膜の両端は上記両端面電極
３に接続されている。このノイズフィルタ１０において
も、２組のバリスタ部Ｚと出力側の端面電極３との間に
抵抗膜８を配設したので、半導体部品の誤動作や破壊を
確実に回避でき、上記実施例と同様の効果が得られる。FIGS. 5 and 6 are views showing a modification of the above-mentioned embodiment, in which the same symbols as in FIG. 1 indicate the same or corresponding parts. In this noise filter 10, two pairs of internal electrodes 5 are embedded inside the sintered body 2 with a space therebetween, one end face 5a of each internal electrode 5 is connected to one end face electrode 3, and each internal electrode is connected. A common electrode 6 is arranged on the upper and lower parts of the electrode 5. A resistance film 8 is formed on the upper surface of the sintered body 2, and both ends of the resistance film are connected to the both end surface electrodes 3. Also in this noise filter 10, since the resistance film 8 is provided between the two sets of the varistor portion Z and the end surface electrode 3 on the output side, it is possible to surely avoid malfunction or destruction of the semiconductor component, and similar to the above embodiment. The effect of is obtained.
【００１３】[0013]
【発明の効果】以上のように本発明に係るノイズフィル
タによれば、焼結体の内部に少なくとも１つの内部電極
を配設するとともに、該内部電極と異なる平面上で交差
する共通電極を配設し、上記焼結体の表面に両端面電極
に接続される抵抗膜を付加したので、電源部，信号ライ
ンから侵入した高電圧パルスを吸収でき、半導体部品の
誤動作や破壊を確実に回避できる効果がある。As described above, according to the noise filter of the present invention, at least one internal electrode is provided inside the sintered body and a common electrode intersecting with the internal electrode on a different plane is provided. Since a resistance film connected to the electrodes on both ends is added to the surface of the sintered body, it is possible to absorb high-voltage pulses that have entered from the power supply section and the signal line, and it is possible to reliably prevent malfunction and destruction of semiconductor components. effective.
【図１】本発明の一実施例によるノイズフィルタを説明
する断面図である。FIG. 1 is a sectional view illustrating a noise filter according to an embodiment of the present invention.
【図２】上記実施例のノイズフィルタを示す斜視図であ
る。FIG. 2 is a perspective view showing a noise filter of the above embodiment.
【図３】上記実施例のノイズフィルタの分解斜視図であ
る。FIG. 3 is an exploded perspective view of the noise filter of the above embodiment.
【図４】上記実施例のノイズフィルタの等価回路図であ
る。FIG. 4 is an equivalent circuit diagram of the noise filter of the above embodiment.
【図５】上記実施例のノイズフィルタの変形例を示す断
面図である。FIG. 5 is a cross-sectional view showing a modified example of the noise filter of the above embodiment.
【図６】上記変形例の平面図である。FIG. 6 is a plan view of the modified example.
１，１０ ノイズフィルタ ２ 焼結体 ２ａ，２ｂ 焼結体の両端面 ２ｃ，２ｄ 焼結体の両側面 ３ 端面電極 ４ 側面電極 ５ 内部電極 ５ａ 一端面 ６ 共通電極 ６ａ，６ｂ 両端面 ８ 抵抗膜 1,10 Noise filter 2 Sintered body 2a, 2b Both end surfaces of the sintered body 2c, 2d Both sides of the sintered body 3 Edge electrode 4 side electrodes 5 internal electrodes 5a One end surface 6 common electrode 6a, 6b Both end faces 8 Resistive film
Claims (2)
に端面電極を形成するとともに、両側面の中央部に側面
電極を形成し、上記焼結体の内部に少なくとも１つの内
部電極を配設するとともに、該内部電極の一端面を上記
一方の端面電極に接続し、上記焼結体の内部に上記内部
電極と異なる平面上で交差する共通電極を配設し、該共
通電極の両端面を上記側面電極に接続し、さらに上記焼
結体の表面に上記両端面電極に接続される抵抗膜を形成
したことを特徴とするノイズフィルタ。1. An end face electrode is formed on both end faces of a sintered body having a voltage non-linear characteristic, and side face electrodes are formed in the central portions of both side faces, and at least one internal electrode is formed inside the sintered body. At the same time, one end face of the internal electrode is connected to the one end face electrode, and a common electrode intersecting with the internal electrode on a different plane is provided inside the sintered body, and both ends of the common electrode are arranged. A noise filter, wherein a surface is connected to the side surface electrode, and a resistance film connected to the both end surface electrodes is further formed on the surface of the sintered body.
する焼結体の表面に、端面電極，側面電極が形成されて
いる部分を除いてガラス膜が形成されていることを特徴
とするノイズフィルタ。2. The noise according to claim 1, wherein a glass film is formed on a surface of the sintered body having a voltage non-linear characteristic except a portion where the end face electrodes and the side face electrodes are formed. filter.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3183826A JPH0514103A (en) | 1991-06-27 | 1991-06-27 | Noise filter |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3183826A JPH0514103A (en) | 1991-06-27 | 1991-06-27 | Noise filter |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0514103A true JPH0514103A (en) | 1993-01-22 |
Family
ID=16142526
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3183826A Pending JPH0514103A (en) | 1991-06-27 | 1991-06-27 | Noise filter |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0514103A (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100456040B1 (en) * | 2001-10-01 | 2004-11-08 | 가부시키가이샤 무라타 세이사쿠쇼 | Monolithic electronic component |
| WO2005013367A1 (en) * | 2003-07-30 | 2005-02-10 | Innochips Technology Co., Ltd. | Complex laminated chip element |
| WO2006085492A1 (en) * | 2005-02-09 | 2006-08-17 | Matsushita Electric Industrial Co., Ltd. | Chip component provided with electrostatic protection function |
| KR100638802B1 (en) * | 2003-07-30 | 2006-10-25 | 주식회사 이노칩테크놀로지 | Multilayer Chip Device with Various Capacitance Values |
| KR100733816B1 (en) * | 2005-10-28 | 2007-07-02 | 주식회사 아모텍 | Multilayer Chip Device |
| JP2011521515A (en) * | 2008-04-16 | 2011-07-21 | エプコス アーゲー | Multilayer components |
| JP2013222965A (en) * | 2012-04-17 | 2013-10-28 | Innochip S Technology Co Ltd | Circuit protection element |
| CN110070970A (en) * | 2013-04-04 | 2019-07-30 | 罗姆股份有限公司 | Chip component, circuit unit and electronic equipment |
-
1991
- 1991-06-27 JP JP3183826A patent/JPH0514103A/en active Pending
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100456040B1 (en) * | 2001-10-01 | 2004-11-08 | 가부시키가이샤 무라타 세이사쿠쇼 | Monolithic electronic component |
| WO2005013367A1 (en) * | 2003-07-30 | 2005-02-10 | Innochips Technology Co., Ltd. | Complex laminated chip element |
| KR100638802B1 (en) * | 2003-07-30 | 2006-10-25 | 주식회사 이노칩테크놀로지 | Multilayer Chip Device with Various Capacitance Values |
| WO2006085492A1 (en) * | 2005-02-09 | 2006-08-17 | Matsushita Electric Industrial Co., Ltd. | Chip component provided with electrostatic protection function |
| KR100733816B1 (en) * | 2005-10-28 | 2007-07-02 | 주식회사 아모텍 | Multilayer Chip Device |
| JP2011521515A (en) * | 2008-04-16 | 2011-07-21 | エプコス アーゲー | Multilayer components |
| US8717120B2 (en) | 2008-04-16 | 2014-05-06 | Epcos Ag | Multi-layered component |
| JP2013222965A (en) * | 2012-04-17 | 2013-10-28 | Innochip S Technology Co Ltd | Circuit protection element |
| CN110070970A (en) * | 2013-04-04 | 2019-07-30 | 罗姆股份有限公司 | Chip component, circuit unit and electronic equipment |
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