JPH01290595A - Ｓｉ／Ａｌ↓２Ｏ↓３／Ｓｉ多層構造の形成法 - Google Patents

Ｓｉ／Ａｌ↓２Ｏ↓３／Ｓｉ多層構造の形成法

Info

Publication number: JPH01290595A
Authority: JP; Japan
Prior art keywords: al2o3; single crystal; crystal film; grown; substrate
Prior art date: 1988-05-16
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Granted

Application number

JP11692488A

Other languages

English (en)

Japanese (ja)

Other versions

JPH057359B2 (de

Inventor

Tetsuo Nakamura

哲郎中村

Makoto Ishida

誠石田

Akira Namiki

章並木

Hideto Kanba

神庭　秀人

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

TOUYOKO KAGAKU KK

TOYOHASHI GIJUTSU KAGAKU UNIV

Toyoko Kagaku Co Ltd

Original Assignee

TOUYOKO KAGAKU KK

TOYOHASHI GIJUTSU KAGAKU UNIV

Toyoko Kagaku Co Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1988-05-16

Filing date

1988-05-16

Publication date

1989-11-22

1988-05-16 Application filed by TOUYOKO KAGAKU KK, TOYOHASHI GIJUTSU KAGAKU UNIV, Toyoko Kagaku Co Ltd filed Critical TOUYOKO KAGAKU KK

1988-05-16 Priority to JP11692488A priority Critical patent/JPH01290595A/ja

1989-11-22 Publication of JPH01290595A publication Critical patent/JPH01290595A/ja

1993-01-28 Publication of JPH057359B2 publication Critical patent/JPH057359B2/ja

Status Granted legal-status Critical Current

Links

230000015572 biosynthetic process Effects 0.000 title 1
239000013078 crystal Substances 0.000 claims abstract description 16
238000000034 method Methods 0.000 claims abstract description 8
JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 claims abstract description 5
239000000758 substrate Substances 0.000 claims description 18
229910003158 γ-Al2O3 Inorganic materials 0.000 abstract description 19
229910007264 Si2H6 Inorganic materials 0.000 abstract description 2
PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 abstract description 2
238000010438 heat treatment Methods 0.000 abstract description 2
238000000151 deposition Methods 0.000 description 8
230000008021 deposition Effects 0.000 description 8
238000000635 electron micrograph Methods 0.000 description 6
239000007789 gas Substances 0.000 description 5
238000002128 reflection high energy electron diffraction Methods 0.000 description 5
239000004065 semiconductor Substances 0.000 description 4
230000000694 effects Effects 0.000 description 3
238000002524 electron diffraction data Methods 0.000 description 3
239000012535 impurity Substances 0.000 description 3
PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
229910052593 corundum Inorganic materials 0.000 description 2
238000010894 electron beam technology Methods 0.000 description 2
229910001845 yogo sapphire Inorganic materials 0.000 description 2
241000238557 Decapoda Species 0.000 description 1
229910000525 Si/Al2O3 Inorganic materials 0.000 description 1
VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
229910008425 Si—Al2O3 Inorganic materials 0.000 description 1
238000004458 analytical method Methods 0.000 description 1
230000004888 barrier function Effects 0.000 description 1
238000010586 diagram Methods 0.000 description 1
238000002003 electron diffraction Methods 0.000 description 1
238000005516 engineering process Methods 0.000 description 1
238000004519 manufacturing process Methods 0.000 description 1
239000012528 membrane Substances 0.000 description 1
230000005855 radiation Effects 0.000 description 1
239000012495 reaction gas Substances 0.000 description 1
238000000682 scanning probe acoustic microscopy Methods 0.000 description 1
229910052814 silicon oxide Inorganic materials 0.000 description 1
238000000927 vapour-phase epitaxy Methods 0.000 description 1
238000001947 vapour-phase growth Methods 0.000 description 1

Landscapes

Crystals, And After-Treatments Of Crystals (AREA)
Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

JP11692488A 1988-05-16 1988-05-16 Ｓｉ／Ａｌ↓２Ｏ↓３／Ｓｉ多層構造の形成法 Granted JPH01290595A (ja)

Priority Applications (1)

Application Number	Priority Date	Filing Date	Title
JP11692488A JPH01290595A (ja)	1988-05-16	1988-05-16	Ｓｉ／Ａｌ↓２Ｏ↓３／Ｓｉ多層構造の形成法

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP11692488A JPH01290595A (ja)	1988-05-16	1988-05-16	Ｓｉ／Ａｌ↓２Ｏ↓３／Ｓｉ多層構造の形成法

Publications (2)

Publication Number	Publication Date
JPH01290595A true JPH01290595A (ja)	1989-11-22
JPH057359B2 JPH057359B2 (de)	1993-01-28

Family

ID=14699049

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP11692488A Granted JPH01290595A (ja)	1988-05-16	1988-05-16	Ｓｉ／Ａｌ↓２Ｏ↓３／Ｓｉ多層構造の形成法

Country Status (1)

Country	Link
JP (1)	JPH01290595A (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPH07187892A (ja) *	1991-06-28	1995-07-25	Internatl Business Mach Corp <Ibm>	シリコン及びその形成方法

1988
- 1988-05-16 JP JP11692488A patent/JPH01290595A/ja active Granted

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPH07187892A (ja) *	1991-06-28	1995-07-25	Internatl Business Mach Corp <Ibm>	シリコン及びその形成方法

Also Published As

Publication number	Publication date
JPH057359B2 (de)	1993-01-28

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