JPH01319935A - Dry-etching device for pyroelectric material - Google Patents

Abstract

PURPOSE:To reduce the instantaneous temperature changes of a pyroelectric material and convey the pyroelectric material easily by providing several protrusions on a tray on which a pyroelectric material substrate of a sample to be etched is put or on a substrate electrode so that the pyroelectric material substrate may come into point-contact with them. CONSTITUTION:A tray 16 provided with protrusions 15 is put one a substrate electrode 2, and a pyroelectric material substrate 8 being a sample to be etched is put on the tray 16 through the medium of the protrusions 15. Though the pyroelectric material 12 is polarized electrically through the pyroelectric effect produced with the heat by a physical-chemical reaction of a reaction gas plasma, the protrusions 15 on the tray 16 or electrode 2 prevent the electrostatic attraction. This reduces the instantaneous temperature changes of the material 12, and makes it possible to convey the material 12 easily.

Description

DETAILED DESCRIPTION OF THE INVENTION 36 Field of Industrial Application Detailed Description of the Invention The present invention relates to a dry etching device used in the processing of pyroelectric materials used in surface acoustic wave filters and the like.

BACKGROUND OF THE INVENTION In recent years, attempts to apply surface acoustic waves to the field of communication engineering have rapidly increased, and the handling of the pyroelectric material that is the main substrate has become a problem.

A conventional dry etching apparatus will be explained.

FIG. 3 is a schematic diagram of a parallel plate electrode type dry etching apparatus. In FIG. 3, 1 is a counter electrode, 2 is a substrate electrode, and matching device 3. A high frequency power source 4 is connected. 5
, 6 are inlets and outlets for a medium for cooling the counter electrode 1 and the substrate electrode 2. The substrate electrode is insulated by an insulator 7, and a pyroelectric material substrate 8 serving as a sample to be etched is placed thereon. 9 is an elevating means for transferring the pyroelectric material substrate 8; 10 is a reaction gas supply port; 11 is an exhaust port; is connected. When the reactive gas is supplied to the dry etching apparatus configured as described above and is maintained at a constant pressure, when high frequency power is applied, the reactive gas is turned into plasma between the counter electrode 1 and the substrate electrode 2, and is focused. The sample to be etched formed on the electrical material substrate 8 is removed and discharged by the physicochemical reaction of the reactive gas plasma, and etching progresses.

Problems to be Solved by the Invention However, in the parallel plate type dry etching apparatus having the above configuration, the pyroelectric material is heated by the physicochemical reaction of the reactive gas plasma, and the pyroelectric material is electrically polarized due to the pyroelectric effect. The problem is that even the slightest impact can cause cracking and damage, requiring a long time to cool down after etching, and the electrical polarization of the pyroelectric material can cause electrostatic adhesion, which can lead to transport errors. It had some problems. In view of the above-mentioned problems, the present invention makes it possible to transport a film to be etched on a substrate containing a pyroelectric material without causing electrostatic adhesion due to electrical polarization between the substrate electrode and the pyroelectric material after completion of dry etching of the film to be etched on the substrate. The present invention provides a dry etching method for pyroelectric materials.

Means for Solving the Problems In order to solve the above-mentioned problems, the present invention provides a tray for placing a pyroelectric material substrate of a sample to be etched or a substrate electrode in which several pyroelectric material substrates are placed in point contact with each other. It is equipped with a protrusion.

Operation With the above configuration, the pyroelectric material is electrically polarized due to the pyroelectric effect generated by the heat generated by the physicochemical reaction of the reactive gas plasma, but electrostatic adsorption is prevented by the protrusions on the tray or substrate electrode. Therefore, the pyroelectric material can be transported without causing electrostatic adsorption due to electrical polarization of the pyroelectric material.

EXAMPLES Hereinafter, dry etching methods according to certain embodiments of the present invention will be described with reference to the drawings. The structure of the dry etching apparatus for carrying out the dry etching methods in the first and second embodiments of the present invention is the same as that shown in FIG. 3, which is a conventional dry etching apparatus. In the first embodiment of the present invention, a tray 16 on which a protrusion 15 is installed is placed on the substrate electrode 2, and a pyroelectric material, which is a sample to be etched, is placed on the tray 16 via the protrusion 15. A substrate 8 is placed. This pyroelectric material substrate 8 has an Ae or Ae gold alloy metal film 13 formed on the pyroelectric material 13, and a photoresist 14 integrally formed on the metal film 13. The protrusion 15 is φ2III and has a thickness of 0.
Four pieces of 1 mm were used.

Hereinafter, the operation of the above configuration will be explained with reference to FIGS. 1 and 3. First, as shown in FIG. 1, a pyroelectric material substrate 8, which is a sample to be etched, is placed on a tray 16 on which projections 15 are installed. Tray 1 on which a pyroelectric material substrate 8 is placed
6 is placed on the substrate electrode 2. Next, in FIG. 3, after the pressure inside the container is made constant by an exhaust means (not shown), a reaction gas is supplied, and when high frequency power is applied while maintaining the pressure at a constant level, the counter electrode 1 and the substrate electrode 2
In the meantime, the reactive gas turns into plasma, and the metal film 13 (see FIG. 1) formed on the pyroelectric material substrate 8 is removed and discharged by the physicochemical reaction of the reactive gas plasma, and etching progresses.

A second embodiment of the present invention will be described below with reference to FIG. A protrusion 15 is installed on the substrate electrode 2, and a pyroelectric material substrate 8, which is a sample to be etched, is placed. The protrusion 15 has a diameter of 2 mm and a thickness of 0.1 mm.
I used it individually. The operation is the same as in the first embodiment. As described above, according to each embodiment, the pyroelectric material substrate 8 and the tray 16 or the substrate electrode 2 do not come into surface contact with each other due to the projections 15.
Alternatively, since adsorption with the substrate electrode 2 can be prevented, it can be easily transported.

Effects of the Invention As described above, according to the present invention, when the film to be etched formed on the pyroelectric material is removed and discharged by the physicochemical reaction of the reactive gas plasma, the pyroelectric material is heated by the reactive gas plasma. The protrusions provided on the tray or substrate electrode can reduce the instantaneous temperature change of the pyroelectric material, and since the protrusions do not make surface contact with the tray or substrate electrode, the pyroelectric material can be prevented from being adsorbed. can be transported to

[Brief explanation of the drawing]

FIG. 1 is a schematic diagram of the substrate electrode section of the first embodiment of the present invention, FIG. 2 is a schematic diagram of the substrate electrode section of the second embodiment of the invention, and FIG. 3 is a conventional parallel plate FIG. 1 is a schematic configuration diagram of a mold dry etching device. l...Counter electrode, 2...Substrate electrode, 3
...... Matching box, 4... High frequency power supply, 5,
6...Cooling medium inlet/outlet, 7...Insulator, 8...Pyroelectric material substrate, 10...Reaction gas supply port, 11... ...Exhaust port, 12...
...Pyroelectric material, 13...Ae or A2 alloy film, 14...Resist pattern, 15...
...Protrusion, 16...Tray.

Claims (2)

[Claims] (1) A substrate electrode on which a substrate made of pyroelectric material is placed in a vacuum container, a counter electrode placed in parallel to the substrate electrode, and high frequency power applied between the substrate electrode and the counter electrode. A dry etching apparatus comprising means for evacuating the inside of the vacuum container, means for supplying a reaction gas into the vacuum container, and means for evacuating the inside of the vacuum container. Dry etching equipment. (2) The dry etching apparatus for a pyroelectric material according to claim 1, wherein the sample is placed on a tray having protrusions on its surface and placed on the substrate electrode. 3. Industrial application field