JPS5768912A - Manufacture for surface acoustic wave device - Google Patents
Manufacture for surface acoustic wave deviceInfo
- Publication number
- JPS5768912A JPS5768912A JP14437180A JP14437180A JPS5768912A JP S5768912 A JPS5768912 A JP S5768912A JP 14437180 A JP14437180 A JP 14437180A JP 14437180 A JP14437180 A JP 14437180A JP S5768912 A JPS5768912 A JP S5768912A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- acoustic wave
- litao3
- linbo3
- dispersion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 238000010897 surface acoustic wave method Methods 0.000 title abstract 2
- 239000000758 substrate Substances 0.000 abstract 4
- 229910003327 LiNbO3 Inorganic materials 0.000 abstract 2
- 229910012463 LiTaO3 Inorganic materials 0.000 abstract 2
- 239000006185 dispersion Substances 0.000 abstract 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 1
- 230000005540 biological transmission Effects 0.000 abstract 1
- 239000013078 crystal Substances 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 239000007789 gas Substances 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000000203 mixture Substances 0.000 abstract 1
- 239000001301 oxygen Substances 0.000 abstract 1
- 229910052760 oxygen Inorganic materials 0.000 abstract 1
- 238000005546 reactive sputtering Methods 0.000 abstract 1
- 238000000992 sputter etching Methods 0.000 abstract 1
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
PURPOSE:To increase the frequency accuracy, by reducing the dispersion of sound velocity on free surface, through reactive sputter etching of the surface of single crystal substrate of LiNbO3 or LiTaO3 basing on the specified condition. CONSTITUTION:At a manufacturing process where all the surface of substrate of LiNbO3 or LiTaO3 or that other than a transmission/reception wave electrode metal is exposed, a reactive sputtering etching is made to reject amorphous layer on the substrate. In this case, as the reactive gas, gaseous carbon fluoride, oxygen or mixture of the both is used and high frequency power is applied under the conditions of >=0.06Torr pressure and 0.16-0.5W/cm<2> applied voltage density. The dispersion of free surface sound velocity can be reduced and the frequency accuracy can be increased by rejecting the amorphous layer on the substrate at the process like this and forming the surface acoustic wave layer device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14437180A JPS5768912A (en) | 1980-10-17 | 1980-10-17 | Manufacture for surface acoustic wave device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14437180A JPS5768912A (en) | 1980-10-17 | 1980-10-17 | Manufacture for surface acoustic wave device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5768912A true JPS5768912A (en) | 1982-04-27 |
| JPH0337329B2 JPH0337329B2 (en) | 1991-06-05 |
Family
ID=15360554
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14437180A Granted JPS5768912A (en) | 1980-10-17 | 1980-10-17 | Manufacture for surface acoustic wave device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5768912A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01319935A (en) * | 1988-06-21 | 1989-12-26 | Matsushita Electric Ind Co Ltd | Dry-etching device for pyroelectric material |
-
1980
- 1980-10-17 JP JP14437180A patent/JPS5768912A/en active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01319935A (en) * | 1988-06-21 | 1989-12-26 | Matsushita Electric Ind Co Ltd | Dry-etching device for pyroelectric material |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0337329B2 (en) | 1991-06-05 |
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