JPH0144012B2 - - Google Patents
Info
- Publication number
- JPH0144012B2 JPH0144012B2 JP59199460A JP19946084A JPH0144012B2 JP H0144012 B2 JPH0144012 B2 JP H0144012B2 JP 59199460 A JP59199460 A JP 59199460A JP 19946084 A JP19946084 A JP 19946084A JP H0144012 B2 JPH0144012 B2 JP H0144012B2
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- temperature
- surface treatment
- liquid
- cleaning
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
Landscapes
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Description
【発明の詳細な説明】
〔技術分野〕
本発明は、薄板からなる基板（以下ウエハと称
す）の表面処理、特にウエハを回転させながら、
ウエハ表面に処理液を散布して、ウエハの表面処
理を行う表面処理装置に関する。[Detailed Description of the Invention] [Technical Field] The present invention relates to surface treatment of a substrate made of a thin plate (hereinafter referred to as a wafer), particularly, while rotating the wafer.
The present invention relates to a surface treatment apparatus that performs surface treatment on a wafer by spraying a treatment liquid onto the surface of the wafer.
例えば半導体の製造工程において、露光処理さ
れたレジスト面を有するウエハを回転体に載置
し、現像液を、この回転体の上方に設けたノズル
よりウエハのレジスト面に供給して、現像処理を
行う際、ウエハの表面に供給される現像液の温度
条件は、ウエハの現像処理に、極めて大きな影響
を与える。
For example, in a semiconductor manufacturing process, a wafer with a resist surface that has been exposed to light is placed on a rotating body, and a developer is supplied to the resist surface of the wafer through a nozzle installed above the rotating body to perform the development process. During this process, the temperature conditions of the developer supplied to the surface of the wafer have an extremely large effect on the wafer development process.
特に、高密度化したパターンをウエハ表面に形
成する場合においては、ポジ・レジストに対す
る、スプレー現像処理における現像液の温度制御
は、きわめて重要な技術的課題である。 Particularly when forming a highly densified pattern on a wafer surface, temperature control of a developer in spray development processing for positive resist is an extremely important technical issue.
このような要求に応えるため、処理液の貯蔵容
器から、処理液供給ノズルに至る配管系を、恒温
装置により、ほぼ一定温度に維持するようにした
装置は、例えば、特開昭54−78981号公報等によ
り公知である。 In order to meet these demands, a device in which the piping system from the processing liquid storage container to the processing liquid supply nozzle is maintained at a nearly constant temperature using a constant temperature device is disclosed in, for example, Japanese Patent Laid-Open No. 54-78981. It is publicly known from publications and the like.
低速回転するウエハの表面に、現像液をシヤワ
状態として散布することにより、ノズルから噴出
した現像液の気化による液温低下を防ぐようにし
た装置は、特開昭56−33834号公報に記載されて
いる。 JP-A-56-33834 discloses a device that prevents a drop in temperature due to vaporization of the developer ejected from a nozzle by spraying developer in the form of showers onto the surface of a wafer rotating at a low speed. ing.
また、回転するウエハの表面に、表面処理液を
供給し、ウエハの表面処理を行う際、ウエハの裏
面に洗浄液を吹きあてることにより、ウエハの裏
面に表面処理液が附着するのを防ぐことは、例え
ば特開昭55−11311号公報に記載されているよう
に、公知に属する。 In addition, when surface treatment liquid is supplied to the surface of a rotating wafer and the surface treatment of the wafer is performed, it is possible to prevent the surface treatment liquid from adhering to the back surface of the wafer by spraying the cleaning liquid onto the back surface of the wafer. , as described in, for example, Japanese Unexamined Patent Publication No. 11311/1983, is publicly known.
本出願人は、ウエハを保持するために、ウエハ
の下方に位置する回転板の周囲に、多数の上向き
の細孔が小ピツチで穿設されている環状管体を設
け、前記細孔より水を噴出させて、ウエハの裏面
と、環状管体との間に水膜を形成することによ
り、ウエハの裏面及び回転板が、ウエハの表面に
供給される処理液で汚染されないようにした装置
を、特開昭57−147478号公報をもつて開示してい
る。 In order to hold the wafer, the present applicant provided an annular tube in which a large number of upwardly facing pores were bored at a small pitch around a rotary plate located below the wafer, and water was allowed to flow through the pores. The apparatus is designed to prevent the back surface of the wafer and the rotary plate from being contaminated by the processing liquid supplied to the front surface of the wafer by spouting water to form a water film between the back surface of the wafer and the annular tube. , is disclosed in Japanese Patent Application Laid-Open No. 147478/1983.
従来の表面処理装置の概要図を、第２図に示
す。
A schematic diagram of a conventional surface treatment apparatus is shown in FIG.
これは、ウエハ１を回転板２の上に載置し、図
示しない回転駆動手段にて回転板２を回転させ、
かつその上方のノズル５より、供給管６が送られ
てくる所要の表面処理液をウエハ１の表面に供給
し、かつウエハ１の裏面に、供給管４により送ら
れて、ウエハ１の下方に位置するノズル３より噴
出する洗浄液（通常は純水）をもつて洗浄するよ
うにしたものである。 This involves placing the wafer 1 on a rotary plate 2, rotating the rotary plate 2 by a rotation drive means (not shown), and
A supply pipe 6 supplies the required surface treatment liquid to the front surface of the wafer 1 from the nozzle 5 above the nozzle 5, and a supply pipe 4 supplies the required surface treatment liquid to the back surface of the wafer 1, and the liquid is sent to the bottom of the wafer 1. Cleaning is performed using a cleaning liquid (usually pure water) that is ejected from a nozzle 3 located therein.
この装置において、表面処理液は、図示しない
温度制御手段により、所要の温度に保たれて、ウ
エハ１の表面に供給される。しかし、洗浄ノズル
３よりウエハ１の裏面に供給される洗浄液の温度
は、従来温度制御されていなかつたため、洗浄液
の温度変化により、ウエハ１の表面の周辺部分と
中央部分とでは、温度差が生じ、表面処理液の温
度制御の効果がなくなるか、あるいは著しく減少
するという問題点があつた。 In this apparatus, the surface treatment liquid is supplied to the surface of the wafer 1 while being maintained at a required temperature by a temperature control means (not shown). However, since the temperature of the cleaning liquid supplied from the cleaning nozzle 3 to the back surface of the wafer 1 has not been temperature controlled in the past, changes in the temperature of the cleaning liquid cause a temperature difference between the peripheral part and the central part of the front surface of the wafer 1. However, there was a problem in that the temperature control effect of the surface treatment liquid was lost or significantly reduced.
特に、生産性を向上させるために、ウエハの口
径が大きくなり、かつウエハの表面処理の精度が
高くなるに従つて、上記した従来の問題点は、無
視できないものとなつている。 In particular, as the diameter of wafers increases and the accuracy of wafer surface treatment increases in order to improve productivity, the above-mentioned problems of the conventional technology cannot be ignored.
また、工場内で製造される純水の温度変化によ
つて、ウエハの裏面に供給される洗浄液の温度も
変化し、ウエハの表面処理の精度が不均一となる
という問題点もある。 Furthermore, due to changes in the temperature of pure water produced in the factory, the temperature of the cleaning liquid supplied to the back surface of the wafer also changes, resulting in a problem that the precision of the surface treatment of the wafer becomes non-uniform.
このような従来の技術における問題点を解決す
ることが、本発明の目的である。 It is an object of the present invention to solve such problems in the conventional technology.
回転するウエハの表面に供給される表面処理液
の温度を制御する手段をもつて、ウエハの裏面を
洗浄する洗浄液の温度をも、同時にほぼ同一温度
の制御することにより、ウエハの表面に供給する
表面処理液の温度と、ウエハの裏面に供給する洗
浄液の温度とを、常にほぼ同一に保つことによ
り、従来の洗浄液の温度ムラをなくすことが、本
発明の眼目である。
By having means for controlling the temperature of the surface treatment liquid supplied to the surface of the rotating wafer, the temperature of the cleaning liquid for cleaning the back side of the wafer is also controlled at approximately the same temperature and supplied to the front surface of the wafer. The object of the present invention is to eliminate the temperature unevenness of the conventional cleaning liquid by always keeping the temperature of the surface treatment liquid and the temperature of the cleaning liquid supplied to the back surface of the wafer almost the same.
表面処理液を温度調節する手段を恒温水槽と
し、恒温水槽内の恒温水を、ウエハ裏面の洗浄液
に利用し、恒温水槽内に付設した熱交換用配管
に、表面処理液を供給すれば、１個の温度制御手
段で、表面処理液と洗浄液を、同時に温度腸節す
ることができる。 If a constant temperature water bath is used as a means to adjust the temperature of the surface treatment liquid, the constant temperature water in the constant temperature water bath is used as a cleaning liquid for the back side of the wafer, and the surface treatment liquid is supplied to a heat exchange pipe attached to the constant temperature water bath, 1. Using separate temperature control means, the temperature of the surface treatment liquid and the cleaning liquid can be controlled at the same time.
本発明の実施例の概略構成を第１図に示す。 FIG. 1 shows a schematic configuration of an embodiment of the present invention.
密閉型の表面処理液貯留槽１０の内部に処理液
を収容し、かつこの貯留槽１０に、窒素等の不活
性ガス供給管９、及び表面処理液供給管８を接続
する。 A treatment liquid is stored inside a closed type surface treatment liquid storage tank 10, and an inert gas supply pipe 9 such as nitrogen and a surface treatment liquid supply pipe 8 are connected to this storage tank 10.
表面処理液供給管８の末端は、回転板２の表面
に載置したウエハ１の上方に載置したノズル５に
連なり、かつその管路途中に、恒温水槽１２の内
部に位置する熱交換用管７が設けられている。 The end of the surface treatment liquid supply pipe 8 is connected to a nozzle 5 placed above the wafer 1 placed on the surface of the rotary plate 2, and in the middle of the pipe is a heat exchanger located inside a constant temperature water bath 12. A tube 7 is provided.
恒温水槽１２の内部に純水を収容し、水位検知
手段Ｌを介して、自動弁V1を開閉し、純水供給
管１１より純水を補充することにより、恒温水槽
内１２の液位を、常時ほぼ一定に保つようにして
ある。 Pure water is stored inside the constant temperature water tank 12, and the liquid level in the constant temperature water tank 12 is adjusted by opening and closing the automatic valve V1 via the water level detection means L and replenishing the pure water from the pure water supply pipe 11. , is kept almost constant at all times.
恒温水槽１２内の純水は、循環パイプ１４の途
中に設けた循環パンプP2により、恒温装置１３
及び恒温水槽１２内を循環し、恒温状態を維持で
きるようになつている。 The pure water in the constant temperature water tank 12 is transferred to the constant temperature device 13 by a circulation pump P 2 installed in the middle of the circulation pipe 14.
The water is circulated in the constant temperature water tank 12 to maintain a constant temperature state.
恒温装置１３内部には、加熱手段又は冷却手
段、及び温度検知手段が設けられている。 Inside the constant temperature device 13, heating means or cooling means and temperature detection means are provided.
恒温水槽１２内の純水は、所定の温度に保持さ
れ、かつ途中にポンプP1を備える供給管４をも
つて、ウエハ１の下方に位置するノズル３に供給
される。 Pure water in the constant temperature water bath 12 is maintained at a predetermined temperature and is supplied to the nozzle 3 located below the wafer 1 through a supply pipe 4 having a pump P1 in the middle.
ノズル３から噴出して、ウエハ１の裏面を洗浄
する純水と等しい量の純水が、純水供給管１１よ
り補充されるが、補充され純粋と、恒温水槽１２
内の純水の温度の差、及び表面処理液の熱交換用
管７における熱交換量は、恒温温度１３により、
十分補償されるようになつている。 The same amount of pure water as that jetted out from the nozzle 3 and used to clean the back side of the wafer 1 is replenished from the pure water supply pipe 11 , and the pure water that is replenished is kept in the constant temperature water bath 12 .
The difference in the temperature of the pure water inside and the amount of heat exchange in the heat exchange tube 7 for the surface treatment liquid are determined by the constant temperature 13.
They are now being adequately compensated.
回転体２の上にウエハ１を載置して所要の回転
数にて回転させるとともに、自動弁V2を開閉さ
せて、恒温水槽１２内にて所定の温度に維持され
た表面処理液を、不活性ガス配管９のガス圧力に
よつて、ノズル５より、ウエハ１の表面に供給す
る。
The wafer 1 is placed on the rotating body 2 and rotated at the required rotation speed, and the automatic valve V 2 is opened and closed to supply the surface treatment liquid maintained at a predetermined temperature in the constant temperature water bath 12. The gas is supplied from the nozzle 5 to the surface of the wafer 1 by the gas pressure of the inert gas pipe 9.
これと同時に、ポンプP1により恒温水槽１２
内の純水を、ノズル３よりウエハ１の裏面に供給
し、ウエハ１の裏面が、ウエハ１の表面に供給さ
れた表面処理液によつて汚染されるのを防止す
る。 At the same time, the constant temperature water tank 12 is turned on by pump P1 .
The pure water inside is supplied from the nozzle 3 to the back surface of the wafer 1 to prevent the back surface of the wafer 1 from being contaminated by the surface treatment liquid supplied to the front surface of the wafer 1.
この純水は、恒温水槽１２内で、表面処理液と
ほぼ同一温度に、常に保持されているため、ウエ
ハ１の表裏の温度差がなくなり、従来の純水の温
度変化による表面処理ムラを防止することができ
る。 Since this pure water is always maintained at almost the same temperature as the surface treatment liquid in the constant temperature water bath 12, there is no temperature difference between the front and back sides of the wafer 1, which prevents uneven surface treatment due to temperature changes in conventional pure water. can do.
ノズル３により供給された純水の量は、恒温水
槽１２の液位検知手段Ｌにより、水位低下分とし
て検知され、純水供給管１１における自動弁V1
を開閉することにより、補充される。 The amount of pure water supplied by the nozzle 3 is detected as a decrease in the water level by the liquid level detection means L of the constant temperature water tank 12, and the automatic valve V 1 in the pure water supply pipe 11 is detected.
It is replenished by opening and closing.
恒温装置１３は、恒温水槽１２の内部に付設し
てもよく、第１図の実施例に限定されるものでは
ない。 The constant temperature device 13 may be attached inside the constant temperature water bath 12, and is not limited to the embodiment shown in FIG.
また、表面処理液貯留槽１０そのものに恒温装
置を付設し、かつ貯留槽１０の内部に、純水配管
を貫通させても、実施できることは明らかであ
る。 It is clear that the present invention can also be carried out by attaching a constant temperature device to the surface treatment liquid storage tank 10 itself and passing a pure water pipe through the storage tank 10.
さらに、恒温水槽内に熱媒を入れ、その内部に
洗浄水及び表面処理液の配管を位置させて実施す
ることもできる。 Furthermore, it is also possible to carry out the process by placing a heating medium in a constant-temperature water tank and placing pipes for cleaning water and surface treatment liquid inside the tank.
(1) 従来の表面処理工程においては、ウエハ裏面
に噴出させた洗浄水の温度ムラや変化によつ
て、ウエハの表面周辺部と中央部の表面処理が
不均一となる、という問題があつたが、これを
完全に解決することができる。
(1) In the conventional surface treatment process, there was a problem in that the surface treatment at the periphery and center of the wafer surface was uneven due to unevenness and changes in the temperature of the cleaning water sprayed onto the backside of the wafer. However, this can be completely resolved.
(2) 特に、フオトタイプの現像処理工程やエツチ
ング処理工程において、従来に比して、より微
細なパターンを形成することができる。(2) In particular, it is possible to form finer patterns than in the past, in photo development and etching processes.
(3) １個のユニツトにて、表面処理液及び洗浄水
を、同時に恒温状態に維持することができ、装
置を小型かつ安価とすることができる。(3) Surface treatment liquid and cleaning water can be maintained at a constant temperature at the same time in one unit, and the device can be made small and inexpensive.
第１図は、本発明の一実施例を、概念的に示す
図である。第２図は、従来の基板表面処理装置の
概要を示す図である。
１……ウエハ、２……回転板、３……ノズル、
４……供給管、５……ノズル、６……供給管、７
……熱交換管、８……表面処理液供給管、９……
不活性ガス供給管、１０……表面処理液貯留槽、
１１……純水供給管、１２……恒温水槽、１３…
…恒温装置、１４……循環パイプ、Ｌ……水位液
知手段、V1……自動弁、P1……ポンプ、、P2……
循環ポンプ。
FIG. 1 is a diagram conceptually showing an embodiment of the present invention. FIG. 2 is a diagram showing an outline of a conventional substrate surface treatment apparatus. 1... Wafer, 2... Rotating plate, 3... Nozzle,
4... Supply pipe, 5... Nozzle, 6... Supply pipe, 7
... Heat exchange tube, 8 ... Surface treatment liquid supply pipe, 9 ...
Inert gas supply pipe, 10... surface treatment liquid storage tank,
11... Pure water supply pipe, 12... Constant temperature water tank, 13...
... Constant temperature device, 14 ... Circulation pipe, L ... Water level detection means, V 1 ... Automatic valve, P 1 ... Pump, P 2 ...
circulation pump.
Claims (1)
に回転する回転体と、 該回転体の上方に配設され、基板の表面に表面
処理液を散布する処理液散布用ノズルと、 前記回転体に載置された基板の裏面に洗浄液を
噴射するように、基板の下方に配設された洗浄用
ノズルと、 該洗浄用ノズルから噴射される洗浄液を貯溜
し、所要温度に調節する恒温液槽と、 該恒温液槽内に貯溜した洗浄液中に浸漬して設
置され、前記表面処理液を通過させてその温度を
調節した後、前記処理液散布用ノズルに供給する
熱交換用管と、 を備えた基板の表面処理装置。[Scope of Claims] 1. A rotating body with a substrate to be processed placed on its surface and rotating together with the substrate; and a processing liquid sprayer disposed above the rotating body and spraying a surface treatment liquid onto the surface of the substrate. a cleaning nozzle disposed below the substrate so as to spray the cleaning liquid onto the back surface of the substrate placed on the rotating body; and a cleaning nozzle that stores the cleaning liquid sprayed from the cleaning nozzle and stores the cleaning liquid as required. A constant-temperature liquid bath whose temperature is adjusted; and a cleaning liquid stored in the constant-temperature liquid bath, which is immersed in the bath, and after the surface treatment liquid is passed through to adjust its temperature, it is supplied to the treatment liquid spraying nozzle. A substrate surface treatment device equipped with a heat exchange tube and.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59199460A JPS6178123A (en) | 1984-09-26 | 1984-09-26 | Process and device of processing substrate surface |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59199460A JPS6178123A (en) | 1984-09-26 | 1984-09-26 | Process and device of processing substrate surface |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6178123A JPS6178123A (en) | 1986-04-21 |
| JPH0144012B2 true JPH0144012B2 (en) | 1989-09-25 |
Family
ID=16408168
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59199460A Granted JPS6178123A (en) | 1984-09-26 | 1984-09-26 | Process and device of processing substrate surface |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6178123A (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003086486A (en) * | 2001-09-11 | 2003-03-20 | Canon Inc | Exposure equipment |
| US20100258142A1 (en) * | 2009-04-14 | 2010-10-14 | Mark Naoshi Kawaguchi | Apparatus and method for using a viscoelastic cleaning material to remove particles on a substrate |
| CN102896104B (en) * | 2012-10-15 | 2014-12-10 | 京东方科技集团股份有限公司 | Base plate washing equipment and base plate washing system |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5511311A (en) * | 1978-07-10 | 1980-01-26 | Hitachi Ltd | Method of photoresist developing |
| JPS57166032A (en) * | 1981-04-03 | 1982-10-13 | Toshiba Corp | Spray type developing device for positive resist |
| JPS5868749A (en) * | 1981-10-21 | 1983-04-23 | Toshiba Corp | Resist developing device |
| JPS58128441U (en) * | 1982-02-24 | 1983-08-31 | 富士通株式会社 | developing device |
| JPS6083240U (en) * | 1983-11-15 | 1985-06-08 | 富士通株式会社 | spin developing machine |
-
1984
- 1984-09-26 JP JP59199460A patent/JPS6178123A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6178123A (en) | 1986-04-21 |
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