JPH0157821U

JPH0157821U -

Info

Publication number: JPH0157821U
Application number: JP15306187U
Authority: JP
Priority date: 1987-10-06
Filing date: 1987-10-06
Publication date: 1989-04-11

Description

[Brief explanation of the drawing]

第１図ないし第６図は本考案の各実施例に係り
、第１図は一実施例の回路図、第２図は接合形ト
ランジスタのドレイン電流対ゲート・ソース間電
圧との一般的特性図、第３図は従来例と実施例と
の動作上の相違の説明に供するための図であり、
第３図ａ―１，ａ―２は発光ダイオード電流特性
図、第３図ｂ―１，ｂ―２は接合形トランジスタ
のゲート・ソース間電圧の特性図、第３図ｃ―１
，ｃ―２は電界効果トランジスタのゲート・ソー
ス間電圧の特性図である。そして、第３図ａ―１
，ｂ―１，ｃ―１は従来例、第３図ａ―１，ｂ―
２，ｃ―２は実施例を示している。第４図は他の
実施例の回路図、第５図はさらに他の実施例の回
路図、第６図はさらにまた他の実施例の回路図で
ある。第７図は従来例の回路図、第８図は他の従
来例の回路図である。１……発光ダイオード、２……起電力発生素子
アレー、３……電界効果トランジスタ、７……バ
イアス抵抗、８……接合形トランジスタ。 1 to 6 relate to each embodiment of the present invention, FIG. 1 is a circuit diagram of one embodiment, and FIG. 2 is a general characteristic diagram of drain current versus gate-source voltage of a junction transistor. , FIG. 3 is a diagram for explaining the operational difference between the conventional example and the embodiment,
Figure 3 a-1 and a-2 are light emitting diode current characteristic diagrams, Figure 3 b-1 and b-2 are junction transistor gate-source voltage characteristic diagrams, Figure 3 c-1
, c-2 is a characteristic diagram of the gate-source voltage of a field effect transistor. And Figure 3 a-1
, b-1, c-1 are conventional examples, Fig. 3 a-1, b-
2, c-2 shows an example. FIG. 4 is a circuit diagram of another embodiment, FIG. 5 is a circuit diagram of still another embodiment, and FIG. 6 is a circuit diagram of still another embodiment. FIG. 7 is a circuit diagram of a conventional example, and FIG. 8 is a circuit diagram of another conventional example. DESCRIPTION OF SYMBOLS 1... Light emitting diode, 2... Electromotive force generating element array, 3... Field effect transistor, 7... Bias resistor, 8... Junction type transistor.

Claims

[Claims for Utility Model Registration] Consisting of a plurality of electromotive force generating elements connected in series that generate electromotive force in response to received light input, and M
An array of electromotive force generating elements connected between a gate terminal and a source terminal of an OS type field effect transistor, and a discharge of charge in a stray capacitance existing between the gate terminal and a source terminal of the MOS type field effect transistor. In a drive circuit for a MOS field effect transistor, the discharge circuit includes: a bias resistor inserted in a charging current path to the stray capacitance; and a gate of the MOS field effect transistor. A MOS type electric field characterized in that it includes a junction type transistor having a source terminal and a drain terminal connected between the terminal and the source terminal, and a junction type transistor having the bias resistor connected between the gate terminal and the source terminal. Effect transistor drive circuit.