JPH0158823B2 - - Google Patents
Info
- Publication number
- JPH0158823B2 JPH0158823B2 JP12251483A JP12251483A JPH0158823B2 JP H0158823 B2 JPH0158823 B2 JP H0158823B2 JP 12251483 A JP12251483 A JP 12251483A JP 12251483 A JP12251483 A JP 12251483A JP H0158823 B2 JPH0158823 B2 JP H0158823B2
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- potential
- diameter
- main lens
- electrodes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000007423 decrease Effects 0.000 claims description 12
- 230000001133 acceleration Effects 0.000 claims 1
- 238000010894 electron beam technology Methods 0.000 description 7
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 6
- 230000004075 alteration Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 230000005684 electric field Effects 0.000 description 3
- 230000003247 decreasing effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
- H01J29/46—Arrangements of electrodes and associated parts for generating or controlling the ray or beam, e.g. electron-optical arrangement
- H01J29/48—Electron guns
- H01J29/488—Schematic arrangements of the electrodes for beam forming; Place and form of the elecrodes
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、高輝度時においても高い解像度が得
られるように構成した受像管装置に関する。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a picture tube device configured to provide high resolution even at high brightness.
従来例の構成とその問題点
一般に、受像管の解像度は絵素となるビームス
ポツト(輝点)の大きさに依存し、ビームスポツ
ト径が小さいほど高い解像度が得られる。一方、
ビームスポツトはビーム電流の増大に伴つて径大
化するので、比較的大きいビーム電流が流れる高
輝度時にブルーミングを生じて解像度が低下す
る。Conventional Structure and Problems Therein Generally, the resolution of a picture tube depends on the size of a beam spot (bright spot) serving as a picture element, and the smaller the diameter of the beam spot, the higher the resolution can be obtained. on the other hand,
Since the diameter of the beam spot increases as the beam current increases, blooming occurs at high brightness times when a relatively large beam current flows, resulting in a decrease in resolution.
これを図面により説明すると、第1図にはバイ
ポテンシヤル形電子銃の電極構成が示されてお
り、第2図には同電子銃の軸上電位分布が示され
ている。陰極1から放射された熱電子は、陰極
1、制御電極としてのG1電極2および加速電極
としてのG2電極3からなる三極部で生成される
いわゆるカソードレンズ4によりクロスオーバ5
をつくり、G2電極3と集束電極たるG3電極6と
の間に生成されるプリフオーカスレンズ7で予備
集束作用を受ける。そしてG3電極6と最終加速
電極たるG4電極8との間に生成されるメインレ
ンズ9で最終的な集束作用を受け、螢光体スクリ
ーン面10に射突してビームスポツト11を生成
するのであり、ビームスポツト11はクロスオー
バ5の投影像である。 To explain this with the drawings, FIG. 1 shows the electrode configuration of a bipotential electron gun, and FIG. 2 shows the axial potential distribution of the electron gun. Thermionic electrons emitted from the cathode 1 are passed through a crossover 5 by a so-called cathode lens 4 generated in a triode consisting of the cathode 1, the G1 electrode 2 as a control electrode, and the G2 electrode 3 as an accelerating electrode.
A prefocusing lens 7 is formed between the G2 electrode 3 and the G3 electrode 6, which is a focusing electrode, to perform a prefocusing action. The main lens 9 formed between the G3 electrode 6 and the G4 electrode 8, which is the final accelerating electrode, receives the final focusing action and impinges on the phosphor screen surface 10 to generate a beam spot 11. The beam spot 11 is a projected image of the crossover 5.
陰極1からG3電極6にいたる軸上電位分布は
ゆるやかに上昇し、これによりカソードレンズ4
およびプリフオーカスレンズ7が生成されるが、
両レンズ4,7は明確に区別し難いので、以下の
説明ではこの両レンズ領域をビーム形成部と呼称
する。G3電極6内における軸上電位分布はVfpcと
略一定であるが、G3電極6とG4電極8との間に
おける軸上電位は高電位Vaへと急激に上昇し、
ここにメインレンズ9が生成される。 The axial potential distribution from the cathode 1 to the G3 electrode 6 rises gradually, and this causes the cathode lens 4 to
and prefocus lens 7 is generated,
Since both lenses 4 and 7 are difficult to clearly distinguish, in the following description, these two lens regions will be referred to as a beam forming section. The axial potential distribution within the G 3 electrode 6 is approximately constant at V fpc , but the axial potential between the G 3 electrode 6 and the G 4 electrode 8 rapidly increases to a high potential V a .
The main lens 9 is generated here.
前記ビーム形成部の熱電子の挙動は非常に複雑
であるが、大ビーム電流時には第3図に数本の線
でもつて代表的に示す電子軌道12〜17を通
る。電子軌道12〜17がすべて一点で交差すれ
ば理想的な径小のクロスオーバおよびビームスポ
ツトが生成されるのであるが、実際には陰極1の
中央部から放射される熱電子の軌道12,13は
陰極1からもつとも遠い位置18で交差し、陰極
1の周辺部から放射された熱電子の軌道16,1
7は陰極1に近い位置19で交差する。これは前
記ビーム形成部でのレンズに球面収差が伴つてい
るからで、実際上のクロスオーバの径は、理論的
限界値に比べて著しく大きい値となる。 The behavior of the thermoelectrons in the beam forming section is very complicated, but when the beam current is large, the electrons pass through electron trajectories 12 to 17, which are representatively shown by several lines in FIG. If the electron trajectories 12 to 17 all intersect at one point, an ideal small-diameter crossover and beam spot will be generated, but in reality, thermionic trajectories 12 and 13 emitted from the center of the cathode 1 are intersect at the farthest position 18 from the cathode 1, and the trajectory 16, 1 of the thermionic electrons emitted from the periphery of the cathode 1
7 intersect at a position 19 close to the cathode 1. This is because the lens in the beam forming section is accompanied by spherical aberration, and the actual diameter of the crossover is significantly larger than the theoretical limit value.
そして、このクロスオーバがメインレンズ9に
よつて螢光体スクリーン面10上に投影されるの
であるが、正確にはプリフオーカスレンズ7が存
在するために、第3図に示すように実際に投影さ
れるものはクロスオーバ(径d)の虚像であり、
この虚像クロスオーバは第3図中に破線で示した
ように電子軌道12〜17を逆方向へ延長させた
ときの交点として求められる。 Then, this crossover is projected onto the phosphor screen surface 10 by the main lens 9, but precisely because of the presence of the prefocus lens 7, it is actually projected as shown in FIG. What is projected is a virtual image of crossover (diameter d),
This virtual image crossover is obtained as the intersection point when the electron trajectories 12 to 17 are extended in opposite directions, as shown by broken lines in FIG.
いま、虚像クロスオーバの直径をd0とすると、
螢光体スクリーン面10に生じるビームスポツト
11の径dsは次の関係式で表わすことができる。 Now, if the diameter of the virtual image crossover is d 0 ,
The diameter ds of the beam spot 11 generated on the phosphor screen surface 10 can be expressed by the following relational expression.
ds=d0×M+1/4CsD3 ……(1)
ここではMはメインレンズの倍率、Csはメイ
ンレンズの球面収差係数、Dはメインレンズでの
電子ビームの拡がり径を示し、Mは次式で表わさ
れる。 ds=d 0 ×M+1/4CsD 3 ...(1) Here, M is the magnification of the main lens, Cs is the spherical aberration coefficient of the main lens, D is the spread diameter of the electron beam at the main lens, and M is the following formula. It is expressed as
ただし、aはビーム形成部から出る電子ビーム
の最大発散角、Lはメインレンズ9の中心と螢光
体スクリーン面10との間の距離、Vg3はG3電極
電位、VaはG4電極電位を示す。 Here, a is the maximum divergence angle of the electron beam emitted from the beam forming section, L is the distance between the center of the main lens 9 and the phosphor screen surface 10, V g3 is the G3 electrode potential, and V a is the G4 electrode potential. Indicates potential.
(2)式を(1)式に代入すると となる。 Substituting equation (2) into equation (1) gives us becomes.
この式の( )内は受像管のサイズと動作条件
とによつて決まり、Csは使用するレンズの口径
によつて決まる。 The value in parentheses in this equation is determined by the size of the picture tube and operating conditions, and Cs is determined by the aperture of the lens used.
電子ビームの拡がり径Dは、第1項ではD-1、
第2項ではD3のかたちで入つているから、dsが
最小となるようなDの値が存在し、通常はその値
に選ばれる。そして、このような制約のもとでds
を小さくしようとすると、第1項のa・d0を小さ
くしなければならないことになる。 The spread diameter D of the electron beam is D -1 in the first term,
Since the second term is entered in the form of D 3 , there is a value of D that minimizes ds, and that value is usually selected. And under such constraints ds
If you try to make it smaller, you will have to make the first term a・d 0 smaller.
本発明者らの研究結果によると、G2電極とG3
電極との間の電位の上昇を急峻にするとa・d0を
小さくすることができる。第4図はG2電極とG3
電極との間隔を小さくしたときにa・d0が減少す
る様子を示したもので、aとd0とが単独でどのよ
うに変化するかがわかる。G2電極とG3電極との
間隔を小さくするとd0は著しく減少し、aは逆に
増大するが、d0の減少度合がより著しいので両者
の積a・d0は減少する。d0がこのように減少する
のは、電位の上昇が急峻になるとビーム形成部に
おけるレンズの球面収差が減少するためである。 According to the research results of the present inventors, G 2 electrode and G 3
By making the potential rise between the electrodes steeper, a·d 0 can be reduced. Figure 4 shows G 2 electrode and G 3
This shows how a·d 0 decreases when the distance between the electrodes is reduced, and it can be seen how a and d 0 change independently. When the distance between the G 2 electrode and the G 3 electrode is reduced, d 0 decreases significantly and a increases, but since the degree of decrease in d 0 is more significant, the product a·d 0 of the two decreases. The reason why d 0 decreases in this way is that the spherical aberration of the lens in the beam forming section decreases when the potential rises steeply.
このような効果がはつきりと現われるのは、電
位傾度で約105V/cmからであり、この値が大きい
ほど大電流時ビームスポツトの径小化に有利であ
る。しかし小電流時ビームスポツト径は逆に大き
くなる。また、電位傾度が大きくなり過ぎると、
G2電極の表面から電界放出による電子放射が起
こり、これが螢光体スクリーン面に射突して不本
意な発光を生じる。 Such an effect clearly appears at a potential gradient of about 10 5 V/cm, and the larger this value is, the more advantageous it is to reducing the diameter of the beam spot at high currents. However, when the current is small, the beam spot diameter becomes larger. Also, if the potential gradient becomes too large,
Electron emission occurs from the surface of the G 2 electrode due to field emission, which impinges on the phosphor screen surface to produce unwanted light emission.
このように実用可能な電位傾度には上限があ
り、その値は実験結果によると約5×105V/cmで
ある。G2電極とG3電極との電位差を8KVとする
と、前記値の電位傾度を与えうるG2電極とG3電
極との間隔は0.8mmから0.16mmとなる。 As described above, there is an upper limit to the practical potential gradient, and the value is approximately 5×10 5 V/cm according to experimental results. If the potential difference between the G 2 electrode and the G 3 electrode is 8 KV, the distance between the G 2 electrode and the G 3 electrode that can provide the potential gradient of the above value is 0.8 mm to 0.16 mm.
しかし、このような電位傾度を従来の受像管電
子銃のビーム形成部にそのまま適用しても、螢光
体スクリーン面上でのビームスポツト径を縮小さ
せ得ない。それは、G2−G3間電位傾度を高める
とビーム発散角aが増大するためである。ビーム
発散角aが増大すると、メインレンズ9での電子
ビーム径Dが増大し、(3)式右辺第2項のメインレ
ンズ収差による寄与分が増大する。そして同第2
項はDの三乗に比例するので、電子ビーム径Dの
わずかな増大でも影響が大きく、(3)式第1項の
a・d0をせつかく減少させても、ビームスポツト
径dsはかえつて増大する結果となる。 However, even if such a potential gradient is directly applied to the beam forming section of a conventional picture tube electron gun, the beam spot diameter on the phosphor screen surface cannot be reduced. This is because increasing the potential gradient between G 2 and G 3 increases the beam divergence angle a. When the beam divergence angle a increases, the electron beam diameter D at the main lens 9 increases, and the contribution of the main lens aberration in the second term on the right side of equation (3) increases. And the second
Since the term is proportional to the cube of D, even a slight increase in the electron beam diameter D has a large effect, and even if a・d 0 in the first term of equation (3) is reduced, the beam spot diameter ds will change. This results in an increase in
電子ビーム径Dの増大は、G3電極の長さを小
さくすることによつて避けられるが、フオーカス
条件を満すためにG3電極を短かくした分だけメ
インレンズ焦点距離を短かくすることが必要とな
り、そのためにはG3電極電位を下げなければな
らない。そうすると、G2−G3間電位傾度が下つ
てしまい、電極間隔をせつかく狭めたにもかかわ
らずa・d0の低減効果は失われてしまう。 An increase in the electron beam diameter D can be avoided by reducing the length of the G3 electrode, but in order to satisfy the focus condition, the main lens focal length must be shortened by the length of the G3 electrode. is required, and for this purpose the G 3 electrode potential must be lowered. In this case, the potential gradient between G 2 and G 3 decreases, and the effect of reducing a·d 0 is lost even though the electrode spacing is diligently narrowed.
発明の目的
本発明は、前述のような従来の不都合を除去す
るためになされたもので、低輝度域から高輝度域
まで略一定径のビームスポツトが得られる受像管
装置を提供するものである。Purpose of the Invention The present invention was made to eliminate the above-mentioned conventional disadvantages, and provides a picture tube device that can obtain a beam spot with a substantially constant diameter from a low brightness region to a high brightness region. .
発明の構成
本発明の受像管装置は、制御電極としてのG1
電極側から最終加速電極としてのG5電極側へと
順次に配設されたG2電極、平板状のG3電極およ
び円筒状のG4電極を備える。G3電極は管内でG5
電極に接続されて高電位が与えられ、G2電極と
G3電極との間隔は、この2電極間電位傾度が105
V/cm〜5×105V/cmとなるように設定され、G4
電極には前記高電位よりも低い数KV以下の電位
が与えられる。そして軸上電位分布は、G3電極
領域で極大値をとつたあとG4電極領域にかけ漸
減して極小値をとり、G4電極からG5電極にいた
る領域で連続的に上昇して、G3電極ないしG5電
極の電位の関与により実質的に単一の厚肉メイン
レンズを生成するのであり、これを以下図面に示
した実施例とともに詳しく説明する。Structure of the Invention The picture tube device of the present invention has G 1 as a control electrode.
It includes a G 2 electrode, a flat G 3 electrode, and a cylindrical G 4 electrode, which are arranged in sequence from the electrode side to the G 5 electrode side as the final accelerating electrode. G 3 electrode is G 5 in the tube
connected to the electrode and given a high potential, G 2 electrode and
The distance between the G3 electrode and the potential gradient between the two electrodes is 10 5
V/cm ~ 5×10 5 V/cm, G 4
A potential of several kilovolts or less, which is lower than the high potential, is applied to the electrode. The axial potential distribution reaches a maximum value in the G 3 electrode region, then gradually decreases to a minimum value in the G 4 electrode region, and increases continuously in the region from the G 4 electrode to the G 5 electrode. Through the involvement of the potentials of the 3 electrodes to the G5 electrodes, a substantially single thick main lens is produced, which will be described in detail below in conjunction with the embodiments shown in the drawings.
実施例の説明
第5図に示す電子銃は、制御電極としてのG1
電極2側から最終加速電極としてのG5電極21
側へと順次に配設されたG2電極3、G3電極22
およびG4電極23を備えている。G2電極3は従
来の電子銃における加速電極と同様の構造を有し
ており、G2電極3に隣接する平板状のG3電極2
2はG5電極21に接続されており、G2電極3に
対し105V/cm〜5×105V/cmの電位傾度となるよ
うに近接配置されている。G4電極23およびG5
電極21はいずれも円筒状のもので、G4電極2
3には0V近くから数KVまでの比較的低い可変フ
オーカス電位Vfpcが与えられ、G5電極21には約
30KVの高電位Vaが与えられる。第5図にはG4電
極23とG5電極21とが同一径として示されて
いるが、相互に異なる直径を有していてもよい。
とくにVfpcを0V近傍で使用する場合には、G4電
極径はG5電極径よりも大きいことが望ましい。DESCRIPTION OF EMBODIMENTS The electron gun shown in FIG. 5 has G 1 as a control electrode.
G5 electrode 21 as the final accelerating electrode from the electrode 2 side
G 2 electrode 3 and G 3 electrode 22 arranged sequentially to the side
and a G 4 electrode 23. The G 2 electrode 3 has a structure similar to the accelerating electrode in a conventional electron gun, and the flat G 3 electrode 2 adjacent to the G 2 electrode 3
2 is connected to the G 5 electrode 21 and placed close to the G 2 electrode 3 so as to have a potential gradient of 10 5 V/cm to 5×10 5 V/cm. G 4 electrode 23 and G 5
All electrodes 21 are cylindrical, and G 4 electrodes 2
3 is given a relatively low variable focus potential V fpc from near 0 V to several KV, and the G 5 electrode 21 is given a
A high potential V a of 30KV is applied. Although the G 4 electrode 23 and the G 5 electrode 21 are shown as having the same diameter in FIG. 5, they may have mutually different diameters.
In particular, when using V fpc near 0 V, it is desirable that the G 4 electrode diameter is larger than the G 5 electrode diameter.
このような構成によると、ビーム形成部におけ
る軸上電位分布は急峻に上昇し、大ビーム電流時
のa・d0が著しく減少する一方、ビーム発散角a
が増大する。すなわち、第6図に示すように軸上
電位分布はG3電極22の電子ビーム通過孔24
内で最大値まで上昇し、G4電極23にかけて漸
減する。そして、G4電極23およびG5電極24
の領域で連続的に上昇し、G5電極21内にいた
つて高電位Vaに達し、一定となる。一方、G3電
極は平板状であるので、その直後に生成される発
散レンズ電界はきわめ微弱となり、G3電極22、
G4電極23およびG5電極21により生成される
レンズ電界は、実質的に単一の、しかも短焦点距
離のメインレンズ25をつくることになる。短焦
点距離のメインレンズが生成されることは、ビー
ム形成部における電位上昇を急峻に保ちながら虚
像クロスオーバとメインレンズとの相互間距離を
短小化できることを意味し、ビーム発散角aが増
大してもメインレンズ25でのビーム径Dを適正
値に保つことが可能となる。そして、これを(3)式
に照らしてみると、ビーム径Dを増すことなく
a・d0を減少させ得るのであるから、ビームスポ
ツト径dsを縮小化しうることが判かる。 With such a configuration, the axial potential distribution in the beam forming section rises steeply, and a·d 0 at the time of large beam current decreases significantly, while the beam divergence angle a
increases. That is, as shown in FIG. 6, the axial potential distribution is
It increases to the maximum value within the G 4 electrode 23 and gradually decreases. And G 4 electrode 23 and G 5 electrode 24
It rises continuously in the region of , reaches the high potential V a within the G 5 electrode 21, and becomes constant. On the other hand, since the G 3 electrode is flat, the diverging lens electric field generated immediately after that is extremely weak, and the G 3 electrode 22,
The lens electric field generated by the G 4 electrode 23 and the G 5 electrode 21 creates a substantially single, short focal length main lens 25 . The generation of a main lens with a short focal length means that the distance between the virtual image crossover and the main lens can be shortened while keeping the potential rise in the beam forming part steep, and the beam divergence angle a increases. However, it is possible to maintain the beam diameter D at the main lens 25 at an appropriate value. When this is compared with equation (3), it can be seen that since a·d 0 can be decreased without increasing the beam diameter D, the beam spot diameter ds can be reduced.
発明の効果
以上のように本発明の受像管装置によると、ビ
ーム形成部における電位傾度を増大させたので、
同部における球面収差の低減および虚像クロスオ
ーバ径の縮少効果が得られ、しかも、メインレン
ズ電界はG3電極、G4電極およびG5電極の3電極
が関与して短焦点となるので、ビーム発散角が増
大するにもかかわらずメインレンズでの電子ビー
ム径を適正値に保ち得るのであり、大ビーム電流
が流れる高輝度時においても径小のビームスポツ
トが生成され、良好な解像度特性を得ることがで
きる。また、電子銃が短小となるので、管の全長
を短縮できるという利点がある。Effects of the Invention As described above, according to the picture tube device of the present invention, since the potential gradient in the beam forming section is increased,
The effect of reducing the spherical aberration and the virtual image crossover diameter in the same area can be obtained, and the main lens electric field has a short focus due to the involvement of the three electrodes, G 3 electrode, G 4 electrode, and G 5 electrode. Despite the increased beam divergence angle, the electron beam diameter at the main lens can be maintained at an appropriate value, and a beam spot with a small diameter is generated even at high brightness when a large beam current flows, resulting in good resolution characteristics. Obtainable. Furthermore, since the electron gun is short and small, there is an advantage that the total length of the tube can be shortened.
第1図は従来の受像管装置の電子銃の電極構成
図、第2図は同電子銃の軸上電位分布図、第3図
は同電子銃のビーム形成部における動作態様説明
図、第4図はG2電極とG3電極との相互間距離に
対するビーム発散角および虚像クロスオーバ径の
関係を示す特性図、第5図は本発明を実施した受
像管装置の電子銃の電極構成図、第6図は同電子
銃の軸上電位分布図である。
1……陰極、2……G1電極、3……G2電極、
21……G5電極、22……G3電極、23……G4
電極。
Fig. 1 is an electrode configuration diagram of an electron gun of a conventional picture tube device, Fig. 2 is an axial potential distribution diagram of the electron gun, Fig. 3 is an explanatory diagram of the operation mode in the beam forming section of the electron gun, and Fig. 4 The figure is a characteristic diagram showing the relationship between the beam divergence angle and the virtual image crossover diameter with respect to the mutual distance between the G 2 electrode and the G 3 electrode. FIG. 6 is an axial potential distribution diagram of the electron gun. 1... cathode, 2... G 1 electrode, 3... G 2 electrode,
21...G 5 electrode, 22...G 3 electrode, 23...G 4
electrode.
Claims (1)
極としてのG5電極側へと順次に配設されたG2電
極、G3電極、およびG4電極を備え、G3電極は平
板状のもので、高電位が与えられるG5電極に管
内で接続され、G2電極とG3電極との間隔は、こ
の2電極間電位傾度が105V/cm〜5×105V/cmと
なるように設定され、筒状のG4電極には前記高
電位よりも低い数KV以下の電位が与えられ、軸
上電位分布はG3電極領域で極大値をとつたあと
G4電極領域にかけ漸減して極小値をとり、G4電
極からG5電極にいたる領域で連続的に上昇して、
G3電極ないしG5電極の電位の関与により実質的
に単一の厚肉メインレンズを生成することを特徴
とする受像管装置。1 G2 electrode, G3 electrode, and G4 electrode are arranged sequentially from the G1 electrode side as a control electrode to the G5 electrode side as a final acceleration electrode, and the G3 electrode is a flat plate. It is connected inside the tube to the G5 electrode, which is given a high potential, and the distance between the G2 and G3 electrodes is such that the potential gradient between the two electrodes is 10 5 V/cm to 5 × 10 5 V/cm. The cylindrical G4 electrode is given a potential of several KV or less, which is lower than the above-mentioned high potential, and the axial potential distribution reaches its maximum value in the G3 electrode area.
It gradually decreases to the minimum value in the G 4 electrode region, and rises continuously in the region from the G 4 electrode to the G 5 electrode.
A picture tube device characterized in that a substantially single thick main lens is generated by the involvement of the potential of the G3 electrode or the G5 electrode.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12251483A JPS6014733A (en) | 1983-07-05 | 1983-07-05 | Picture tube device |
| DE8383113068T DE3373746D1 (en) | 1982-12-29 | 1983-12-23 | Cathode ray tube |
| EP19830113068 EP0113113B1 (en) | 1982-12-29 | 1983-12-23 | Cathode ray tube |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12251483A JPS6014733A (en) | 1983-07-05 | 1983-07-05 | Picture tube device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6014733A JPS6014733A (en) | 1985-01-25 |
| JPH0158823B2 true JPH0158823B2 (en) | 1989-12-13 |
Family
ID=14837730
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12251483A Granted JPS6014733A (en) | 1982-12-29 | 1983-07-05 | Picture tube device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6014733A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100337858B1 (en) * | 1994-10-31 | 2002-10-25 | 삼성에스디아이 주식회사 | Electron gun for color cathode ray tube |
-
1983
- 1983-07-05 JP JP12251483A patent/JPS6014733A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6014733A (en) | 1985-01-25 |
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