JPH0419661B2 - - Google Patents

Info

Publication number
JPH0419661B2
JPH0419661B2 JP11215583A JP11215583A JPH0419661B2 JP H0419661 B2 JPH0419661 B2 JP H0419661B2 JP 11215583 A JP11215583 A JP 11215583A JP 11215583 A JP11215583 A JP 11215583A JP H0419661 B2 JPH0419661 B2 JP H0419661B2
Authority
JP
Japan
Prior art keywords
electrode
potential
diameter
lens
distance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP11215583A
Other languages
Japanese (ja)
Other versions
JPS603840A (en
Inventor
Hiroshi Suzuki
Masao Natsuhara
Chisato Kurisu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP11215583A priority Critical patent/JPS603840A/en
Publication of JPS603840A publication Critical patent/JPS603840A/en
Publication of JPH0419661B2 publication Critical patent/JPH0419661B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J29/00Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
    • H01J29/46Arrangements of electrodes and associated parts for generating or controlling the ray or beam, e.g. electron-optical arrangement
    • H01J29/48Electron guns
    • H01J29/488Schematic arrangements of the electrodes for beam forming; Place and form of the elecrodes

Description

【発明の詳細な説明】 産業上の利用分野 本発明は、高輝度時においても高い解像度が得
られるように構成した受像管装置に関する。
DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a picture tube device configured to provide high resolution even at high brightness.

従来例の構成とその問題点 一般に、受像管の解像度は絵素となるビームス
ポツト(輝点)の大きさに依存し、ビームスポツ
ト径が小さいほど高い解像度が得られる。一方、
ビームスポツトはビーム電流の増大に伴つて径大
化するので、比較的大きいビーム電流が流れる高
輝度時にブルーミングを生じて解像度が低下す
る。
Conventional Structure and Problems Therein Generally, the resolution of a picture tube depends on the size of a beam spot (bright spot) serving as a picture element, and the smaller the diameter of the beam spot, the higher the resolution can be obtained. on the other hand,
Since the diameter of the beam spot increases as the beam current increases, blooming occurs at high brightness times when a relatively large beam current flows, resulting in a decrease in resolution.

これを図面により説明すると、第1図にはバイ
ポテンシヤル形電子銃の電極構成が示されてお
り、第2図には同電子銃の軸上電位分布が示され
ている。陰極1から放射された熱電子は、陰極
1、制御電極としてのG1電極2および加速電極
としてのG2電極3からなる三極部で生成される
いわゆるカソードレンズ4によりクロスオーバ5
をつくり、G2電極3と集束電極たるG3電極6と
の間に生成されるプリフオーカスレンズ7で予備
集束作用を受ける。そしてG3電極6と最終加速
電極たるG4電極8との間に生成されるメインレ
ンズ9で最終的な集束作用を受け、蛍光体スクリ
ーン面10に射突してビームスポツト11を生成
するのであり、ビームスポツト11はクロクオー
バ5の投影像である。
To explain this with the drawings, FIG. 1 shows the electrode configuration of a bipotential electron gun, and FIG. 2 shows the axial potential distribution of the electron gun. Thermionic electrons emitted from the cathode 1 are passed through a crossover 5 by a so-called cathode lens 4 generated in a triode consisting of the cathode 1, the G1 electrode 2 as a control electrode, and the G2 electrode 3 as an accelerating electrode.
A prefocusing lens 7 is formed between the G2 electrode 3 and the G3 electrode 6, which is a focusing electrode, to perform a prefocusing action. Then, the main lens 9 generated between the G3 electrode 6 and the G4 electrode 8, which is the final accelerating electrode, receives the final focusing action and hits the phosphor screen surface 10 to generate a beam spot 11. The beam spot 11 is a projected image of the clockover 5.

陰極1からG3電極6にいたる軸上電位分布は、
ゆるやかに上昇し、これによりカソードレンズ4
およびプリフオーカスレンズ7が生成されるが、
両レンズ4,7は明確に区別し難いので、以下の
説明ではこの両レンズ領域をビーム形成部と呼称
する。G3電極6内における軸上電位分布はVfoc
と略一定であるが、G3電極6とG4電極8との間
における軸上電位は高電位Vaへと急激に上昇し、
ここにメインレンズ9が生成される。
The axial potential distribution from cathode 1 to G3 electrode 6 is
The cathode lens 4
and prefocus lens 7 is generated,
Since both lenses 4 and 7 are difficult to clearly distinguish, in the following description, these two lens regions will be referred to as a beam forming section. The axial potential distribution in G3 electrode 6 is Vfoc
is approximately constant, but the axial potential between the G 3 electrode 6 and the G 4 electrode 8 rapidly rises to a high potential Va,
The main lens 9 is generated here.

前記ビーム形成部での熱電子の挙動は非常に複
雑であるが、大ビーム電流時には第3図に数本の
線でもつて代表的に示す電子軌道12〜17を通
る。電子軌道12〜17がすべて一点で交差すれ
ば理想的な径小のクロスオーバおよびビームスポ
ツトが生成されるのであるが、実際には陰極1の
中央部から放射された熱電子の軌道12,13は
陰極1からもつとも遠い位置18で交差し、陰極
1の周辺部から放射された熱電子の軌道16,1
7は陰極1に近い位置19で交差する。これは前
記ビーム形成部でのレンズに球面収差が伴つてい
るからで、実際上のクロスオーバの径は、理論的
限界値に比べて著しく大きい値となる。
The behavior of the thermoelectrons in the beam forming section is very complicated, but when the beam current is large, the electrons pass through electron trajectories 12 to 17, which are representatively shown by several lines in FIG. If the electron trajectories 12 to 17 all intersect at one point, an ideal small-diameter crossover and beam spot will be generated, but in reality, thermionic trajectories 12 and 13 emitted from the center of the cathode 1 intersect at the farthest position 18 from the cathode 1, and the trajectory 16, 1 of the thermionic electrons emitted from the periphery of the cathode 1
7 intersect at a position 19 close to the cathode 1. This is because the lens in the beam forming section is accompanied by spherical aberration, and the actual diameter of the crossover is significantly larger than the theoretical limit value.

そして、このクロスオーバがメインレンズ9に
よつて蛍光体スクリーン面10上に投影されるの
であるが、正確にはプリフオーカスレンズ7が存
在するために、第3図に示すように実際に投影さ
れるものはクロスオーバー(径d)の虚像であ
り、この虚像クロスオーバは同図中に破線で示し
たように電子軌道12〜17を逆方向へ延長させ
たときの交点として求められる。
Then, this crossover is projected onto the phosphor screen surface 10 by the main lens 9, but precisely because of the presence of the prefocus lens 7, the crossover is actually projected as shown in FIG. What is shown is a virtual image of the crossover (diameter d), and this virtual image crossover is obtained as the intersection point when electron trajectories 12 to 17 are extended in opposite directions, as shown by broken lines in the figure.

いま、虚像クロスオーバの直径をdoとすると、
蛍光体スクリーン面10に生じるビームスポツト
11の径dsは次の関係式で表わすことができる。
Now, if the diameter of the virtual image crossover is do,
The diameter ds of the beam spot 11 generated on the phosphor screen surface 10 can be expressed by the following relational expression.

ds=do×M+1/4CsD3 ……(1) ここで、Mはメインレンズの倍率、Csはメイ
ンレンズの球面収差係数、Dはメインレンズでの
電子ビームの拡がり径を示し、Mは次式で表わさ
れる。
ds=do×M+1/4CsD 3 ...(1) Here, M is the magnification of the main lens, Cs is the spherical aberration coefficient of the main lens, D is the spread diameter of the electron beam at the main lens, and M is the following formula. It is expressed as

ただし、aはビーム形成部から出る電子ビーム
の最大発散角、Lはメインレンズ9の中心と蛍光
体スクリーン面10との間の距離、VfocはG3
極電位、VaはG4電極電位を示す。
Here, a is the maximum divergence angle of the electron beam emitted from the beam forming section, L is the distance between the center of the main lens 9 and the phosphor screen surface 10, Vfoc is the G3 electrode potential, and Va is the G4 electrode potential. .

(2)式を(1)式に代入すると となる。 Substituting equation (2) into equation (1), we get becomes.

この式の()内は受像管のサイズと動作条件と
によつて決まり、Csは使用するレンズの口径に
よつて決まる。
The value in parentheses in this equation is determined by the size of the picture tube and operating conditions, and Cs is determined by the aperture of the lens used.

電子ビームの拡がり径Dは、第1項ではD-1
第2項ではD3のかたちで入つているから、dsが
最小となるようなDの値が存在し、通常はその値
に選ばれる。そして、このような制約のもとでds
を小さくしようとすると、第1項のa・doを小
さくしなければならないことになる。
The spread diameter D of the electron beam is D -1 in the first term,
Since the second term is entered in the form of D 3 , there is a value of D that minimizes ds, and that value is usually selected. And under such constraints ds
If you try to make it smaller, you will have to make the first term a and do smaller.

本発明者らの研究結果によると、G2電極とG3
電極との間の電位の上昇を急峻にするとa・do
を小さくすることができる。第4図はG2電極と
G3電極との間隔を小さくしたときにa・doが減
少する様子を示したもので、aとdoとが単独で
どのように変化するかがわかる。G2電極とG3
極との間隔を小さくするとdoは著しく減少し、
aは逆に増大するが、doの減少度合がより著し
いので両者の積a・doは減少する。doがこのよ
うに減少するのは、電位の上昇が急峻になるとビ
ーム形成部におけるレンズの球面収差が減少する
ためである。
According to the research results of the present inventors, G 2 electrode and G 3
If the potential between the electrodes rises steeply, a・do
can be made smaller. Figure 4 shows G 2 electrode and
This figure shows how a and do decrease when the distance from the G3 electrode is reduced, and it can be seen how a and do change independently. When the distance between the G 2 and G 3 electrodes is reduced, do decreases significantly,
On the contrary, a increases, but since the degree of decrease in do is more remarkable, the product a·do decreases. The reason that do decreases in this way is that the spherical aberration of the lens in the beam forming section decreases when the potential rises steeply.

このような効果がはつきりと現われるのは、電
位傾度で約105V/cmからであり、この値が大き
いほど大電流時ビームスポツトの径小化に有利で
ある。しかし小電流時ビームスポツト径は逆に大
きくなる。また、電位傾度が大きくなり過ぎる
と、G2電極の表面から電界放出による電子放射
が起り、これが蛍光体スクリーン面に射突して不
本意な発光を生じる。
Such an effect clearly appears at a potential gradient of about 10 5 V/cm, and the larger this value is, the more advantageous it is to reducing the diameter of the beam spot at high currents. However, when the current is small, the beam spot diameter becomes larger. Furthermore, if the potential gradient becomes too large, electron emission occurs from the surface of the G 2 electrode due to field emission, which impinges on the phosphor screen surface and causes unwanted light emission.

このように実用可能な電位傾度には上限があ
り、その値は実験結果によると約5×105V/cm
である。G2電極とG3電極との電位差を8KVとす
ると、前記値の電位傾度を与えうるG2電極とG3
電極との間隔は0.8mmから0.2mmとなる。
In this way, there is an upper limit to the practical potential gradient, and according to experimental results, the value is approximately 5 × 10 5 V/cm.
It is. If the potential difference between the G 2 electrode and the G 3 electrode is 8KV, the G 2 electrode and the G 3 electrode can give a potential gradient of the above value.
The distance between the electrodes is 0.8 mm to 0.2 mm.

しかし、このような電位傾度を従来の受像管電
子銃のビーム形成部にそのまま適用しても、蛍光
体スクリーン面上でのビームスポツト径をし縮小
させ得ない。それは、G2−G3間電位傾度を高め
るとビーム発散角aが増大するためである。ビー
ム発散角aが増大すると、メインレンズ9での電
子ビーム径Dが増大し、(3)式右辺第2項のメイン
レンズ収差による寄与分が増大する。そして同第
2項はDの三乗に比例するので、電子ビーム径D
のわずかな増大でも影響が大きく、(3)式第1項の
a・doをせつかく減少させても、ビームスポツ
ト径dsはかえつて増大する結果となる。
However, even if such a potential gradient is directly applied to the beam forming section of a conventional picture tube electron gun, the beam spot diameter on the phosphor screen surface cannot be reduced. This is because increasing the potential gradient between G 2 and G 3 increases the beam divergence angle a. When the beam divergence angle a increases, the electron beam diameter D at the main lens 9 increases, and the contribution of the main lens aberration in the second term on the right side of equation (3) increases. Since the second term is proportional to the cube of D, the electron beam diameter D
Even a slight increase in ds has a large effect, and even if a·do in the first term of equation (3) is diligently reduced, the beam spot diameter ds will instead increase.

電子ビーム径Dの増大は、G3電極の長さを小
さくすることによつて避けられるが、フオーカス
条件を満たすためにG3電極を短かくした分だけ
メインレンズ焦点距離を短かくすることが必要と
なり、そのためにはG3電極電位を下げなければ
ならない。そうすると、G2−G3間電位傾度が下
つてしまい、電極間隔をせつかく狭めたにもかか
わらずa・do低減効果は失われてしまう。
An increase in the electron beam diameter D can be avoided by reducing the length of the G3 electrode, but in order to satisfy the focus condition, the main lens focal length can be shortened by the length of the G3 electrode. is required, and for this purpose the G 3 electrode potential must be lowered. In this case, the potential gradient between G 2 and G 3 decreases, and the a/do reduction effect is lost even though the electrode spacing is diligently narrowed.

発明の目的 本発明は、前述のような従来の不都合を除去す
るためになされたもので、低輝度域から高輝度域
まで略一定径のビームスポツトが得られる受像管
装置を提供するものである。
Purpose of the Invention The present invention was made to eliminate the above-mentioned conventional disadvantages, and provides a picture tube device that can obtain a beam spot with a substantially constant diameter from a low brightness region to a high brightness region. .

発明の構成 本発明の受像管装置は、制御電極としてのG1
電極側から最終加速電極としてのG6電極側へと
順次に配設されたG2電極、G3電極、G4電極およ
びG5電極を備え、G3電極は平板状のもので、 G2電極のアパーチヤ径をD2 G3電極のアパーチヤ径をD3 G4電極のアパーチヤ径をD4 G2電極とG3電極との間隔をg23 G3電極とG4電極との間隔をg34 とするとき D2≦D3≦2D2,D3≦D4≦2D3 0.5D2≦g23≦1.5D2,0.2D3≦g34≦1.5D3 の関係式が成立し、G4電極にはG3電極およびG5
電極に対するフオーカス電位よりも低い電位が与
えられ、軸上電位分布はG3電極領域で極大値を
とつたあとG4電極領域にかけ漸減して極小値を
とり、G4電極からG6電極にいたる領域で連続的
に上昇し、G2電極とG3電極とで強い集束レンズ
を生成させ、G3電極とG4電極とで強い発散レン
ズを生成させる構成となすのであり、これを以下
図面に示した実施例とともに詳しく説明する。
Structure of the Invention The picture tube device of the present invention has G 1 as a control electrode.
It is equipped with a G 2 electrode, a G 3 electrode, a G 4 electrode, and a G 5 electrode arranged sequentially from the electrode side to the G 6 electrode side as the final accelerating electrode, and the G 3 electrode is a flat plate . The aperture diameter of the electrode is D 2 G The aperture diameter of the 3 electrode is D 3 G The aperture diameter of the 4 electrode is D 4 G The distance between the 2 electrode and G 3 electrode is g 23 G The distance between the 3 electrode and G 4 electrode is g 34 , the relational expression D 2 ≦D 3 ≦2D 2 , D 3 ≦D 4 ≦2D 3 0.5D 2 ≦g 23 ≦1.5D 2 , 0.2D 3 ≦g 34 ≦1.5D 3 holds, and G 4 electrodes include G 3 electrodes and G 5
A potential lower than the focus potential is applied to the electrode, and the axial potential distribution reaches a maximum value in the G 3 electrode area, then gradually decreases to a minimum value in the G 4 electrode area, and reaches from the G 4 electrode to the G 6 electrode. The structure is such that the G 2 and G 3 electrodes generate a strong converging lens, and the G 3 and G 4 electrodes generate a strong diverging lens. This is shown in the drawing below. This will be described in detail along with the illustrated embodiments.

実施例の説明 第5図に示す電子銃は、制御電極としてのG1
電極2側から最終加速電極としてのG6電極21
側へと順次に配設されたG2電極3、G3電極22、
G4電極23およびG5電極24を備えている。G2
電極3は従来の電子銃における加速電極と同様の
構造を有しており、G2電極3に隣接する板状の
G3電極22は、G2電極3に対し105V/cm〜5×
105V/cmの電位傾度となるように近接配置され
ている。
DESCRIPTION OF EMBODIMENTS The electron gun shown in FIG. 5 has G 1 as a control electrode.
G6 electrode 21 as the final accelerating electrode from the electrode 2 side
G 2 electrode 3, G 3 electrode 22 arranged sequentially toward the side;
A G 4 electrode 23 and a G 5 electrode 24 are provided. G 2
The electrode 3 has a structure similar to the accelerating electrode in a conventional electron gun, and has a plate-like structure adjacent to the G 2 electrode 3.
The G 3 electrode 22 is 10 5 V/cm to 5× with respect to the G 2 electrode 3.
They are placed close together so that the potential gradient is 10 5 V/cm.

G4電極23はカツプ状に形成されているが、
G5電極24およびG6電極21は円筒状で、G3
極22とG5電極24とは管内で相互に接続され
ていて6KV〜10KV程度のフオーカス電位Vfoc
が与えられる。また、G4電極23にはフオーカ
ス電位Vfocよりも低い電位が与えられ、G6電極
21には約30KVの高電位Vaが与えられるので、
軸上電位分布は第6図に示すようなものとなる。
The G4 electrode 23 is formed into a cup shape,
The G 5 electrode 24 and the G 6 electrode 21 are cylindrical, and the G 3 electrode 22 and the G 5 electrode 24 are connected to each other inside the tube and have a focus potential Vfoc of about 6KV to 10KV.
is given. Furthermore, a potential lower than the focus potential Vfoc is applied to the G 4 electrode 23, and a high potential Va of about 30 KV is applied to the G 6 electrode 21, so that
The axial potential distribution is as shown in FIG.

すなわち、軸上電位分布はG3電極22のアパ
ーチヤ25内でフオーカス電位Vfocまで上昇し
たのち、G4電極23にかけて漸減し、G4電極2
3、G5電極24およびG6電極21の3電極にま
たがる領域で連続的に上昇し、G6電極21内で
高電位Vaに達する。
That is, the axial potential distribution rises to the focus potential Vfoc within the aperture 25 of the G 3 electrode 22, then gradually decreases toward the G 4 electrode 23, and then decreases to the G 4 electrode 23.
3. It rises continuously in a region spanning three electrodes, G 5 electrode 24 and G 6 electrode 21, and reaches a high potential Va within G 6 electrode 21.

一方、第7図に示すようにG2電極3のアパー
チヤ径をD2,G3電極22のアパーチヤ径をD3
G4電極23のアパーチヤ径をD4,G2電極3とG3
電極22との間隔をg23,G3電極22とG4電極2
3との間隔をg34とするとき D2≦D3≦2D2,D3≦D4≦2D3 0.5D2≦g23≦1.5D2,0.2D3≦g34≦1.5D3 の関係式が成立するように寸度設定されている。
また、G3電極22の板厚t3はt3≒D3と比較的大き
い。
On the other hand, as shown in FIG. 7, the aperture diameter of the G 2 electrode 3 is D 2 , the aperture diameter of the G 3 electrode 22 is D 3 ,
The aperture diameter of G 4 electrode 23 is D 4 , G 2 electrode 3 and G 3
The distance between the electrode 22 is g 23 , and the G 3 electrode 22 and G 4 electrode 2
3, the relationship between D 2 ≦D 3 ≦2D 2 , D 3 ≦D 4 ≦2D 3 0.5D 2 ≦g 23 ≦1.5D 2 , 0.2D 3 ≦g 34 ≦1.5D 3 The dimensions are set so that the formula holds true.
Further, the plate thickness t 3 of the G 3 electrode 22 is relatively large, t 3 ≈D 3 .

このような構成によると、G2電極3とG3電極
22との間に強い集束レンズ26が生成され、
G3電極22とG4電極23との間に強い発散レン
ズ27が生成されるので、大ビーム電流時のa・
doが減少し、ビーム発散角aが増大する。
According to such a configuration, a strong focusing lens 26 is generated between the G 2 electrode 3 and the G 3 electrode 22,
Since a strong diverging lens 27 is generated between the G 3 electrode 22 and the G 4 electrode 23, a.
do decreases and the beam divergence angle a increases.

G4電極23の電位はフオーカス電位Vfocより
も低いから、従来の電子銃構成に比して焦点距離
が短小となる。このことは、ビーム形成部におけ
る軸上電位分布を急峻に上昇させながら虚像クロ
スオーバとメインレンズとの相互間距離を短小化
できることを意味し、ビーム発散角aが増大して
もメインレンズ28でのビーム径Dを適正値に保
つことが可能となる。そしてこれを(3)式に照らし
てみると、ビーム径Dを増すことなくa・doを
減少させ得るのであるから、ビームスポツト径ds
を縮小化しうることが判かる。
Since the potential of the G 4 electrode 23 is lower than the focus potential Vfoc, the focal length is shorter than in the conventional electron gun configuration. This means that the distance between the virtual image crossover and the main lens can be shortened while sharply increasing the axial potential distribution in the beam forming section, and even if the beam divergence angle a increases, the main lens 28 It becomes possible to maintain the beam diameter D at an appropriate value. If we compare this with equation (3), we can see that a・do can be decreased without increasing the beam diameter D, so the beam spot diameter ds
It turns out that it is possible to downsize the .

また、メインレンズ28のレンズ電界が広い範
囲にわたつてゆるやかに分布するため、メインレ
ンズの球面収差は少なく、これは(3)式の第2項の
収差係数Csが小さくなることを意味するから、
この効果によつてもビームスポツト径dsは小さく
なる。
Furthermore, since the lens electric field of the main lens 28 is distributed gently over a wide range, the spherical aberration of the main lens is small, which means that the aberration coefficient Cs in the second term of equation (3) becomes small. ,
This effect also reduces the beam spot diameter ds.

発明の効果 以上のように本発明の受像管装置によると、ビ
ーム形成部におけるレンズ球面収差の減少、虚像
クロスオーバの径小化およびメインレンズ球面収
差の減少という効果があいまつて、大ビーム電流
時においても径小のビームスポツトが得られ、良
好な解像度特性を得ることができる。
Effects of the Invention As described above, according to the picture tube device of the present invention, the effects of reducing lens spherical aberration in the beam forming section, reducing the diameter of the virtual image crossover, and reducing the main lens spherical aberration are combined, and when a large beam current is used, Also, a beam spot with a small diameter can be obtained, and good resolution characteristics can be obtained.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は従来の受像管装置の電子銃電極構成を
示す図、第2図は同電子銃の軸上電位分布図、第
3図は同電子銃のビーム形成部における動作態様
説明図、第4図はG2電極とG3電極との相互間距
離に対するビーム発散角および虚像クロンオーバ
径の関係を示す特性図、第5図は本発明を実施し
た受像管装置の電子銃の電極構成を示す図、第6
図は同電子銃の軸上電位分布図、第7図は同電子
銃の電極寸法を説明するための電極断面図であ
る。 3……G2電極、21……G6電極、22……G3
電極、23……G4電極、24……G5電極。
FIG. 1 is a diagram showing the electron gun electrode configuration of a conventional picture tube device, FIG. 2 is an axial potential distribution diagram of the electron gun, and FIG. 3 is an explanatory diagram of the operation mode in the beam forming section of the electron gun. Figure 4 is a characteristic diagram showing the relationship between the beam divergence angle and the virtual image cronover diameter with respect to the mutual distance between the G 2 electrode and the G 3 electrode, and Figure 5 shows the electrode configuration of the electron gun of the picture tube device implementing the present invention. Figure, 6th
The figure is an axial potential distribution diagram of the electron gun, and FIG. 7 is an electrode cross-sectional view for explaining the electrode dimensions of the electron gun. 3...G 2 electrodes, 21...G 6 electrodes, 22...G 3
Electrode, 23...G 4 electrode, 24...G 5 electrode.

Claims (1)

【特許請求の範囲】 1 制御電極としてのG1電極側から最終加速電
極としてのG6電極側へと順次に配設されたG2
極、G3電極、G4電極およびG5電極を備え、G3
極は平板状のもので、 G2電極のアパーチヤ径をD2 G3電極のアパーチヤ径をD3 G4電極のアパーチヤ径をD4 G2電極とG3電極との間隔をg23 G3電極とG4電極との間隔をg34 とするとき D2≦D3≦2D2,D3≦D4≦2D3 0.5D2≦g23≦1.5D2,0.2D3≦g34≦1.5D3 の関係式が成立し、G4電極にはG3電極およびG5
電極に対するフオーカス電位よりも低い電位が与
えられ、軸上電位分布はG3電極領域で極大値を
とつたあとG4電極領域にかけ漸減して極小値を
とり、G4電極からG6電極にいたる領域で連続的
に上昇し、G2電極とG3とで強い集束レンズを生
成させ、G3電極とG4電極とで強い発散レンズを
生成させることを特徴とする受像管装置。
[Scope of Claims] 1. Includes a G 2 electrode, a G 3 electrode, a G 4 electrode, and a G 5 electrode arranged sequentially from the G 1 electrode side as a control electrode to the G 6 electrode side as a final acceleration electrode. , the G 3 electrode is a flat plate, and the aperture diameter of the G 2 electrode is D 2 The aperture diameter of the G 3 electrode is D 3 The aperture diameter of the G 4 electrode is D 4 The distance between the G 2 electrode and the G 3 electrode is g 23 When the distance between the G 3 electrode and the G 4 electrode is g 34 , D 2 ≦D 3 ≦2D 2 , D 3 ≦D 4 ≦2D 3 0.5D 2 ≦g 23 ≦1.5D 2 , 0.2D 3 ≦g The relational expression 34 ≦1.5D 3 is established, and the G 4 electrode is connected to the G 3 electrode and the G 5
A potential lower than the focus potential is applied to the electrode, and the axial potential distribution reaches a maximum value in the G 3 electrode area, then gradually decreases to a minimum value in the G 4 electrode area, and reaches from the G 4 electrode to the G 6 electrode. A picture tube device characterized in that the G2 electrode and the G3 produce a strong converging lens, and the G3 and G4 electrodes produce a strong diverging lens.
JP11215583A 1983-06-21 1983-06-21 Picture tube device Granted JPS603840A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11215583A JPS603840A (en) 1983-06-21 1983-06-21 Picture tube device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11215583A JPS603840A (en) 1983-06-21 1983-06-21 Picture tube device

Publications (2)

Publication Number Publication Date
JPS603840A JPS603840A (en) 1985-01-10
JPH0419661B2 true JPH0419661B2 (en) 1992-03-31

Family

ID=14579605

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11215583A Granted JPS603840A (en) 1983-06-21 1983-06-21 Picture tube device

Country Status (1)

Country Link
JP (1) JPS603840A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20030060616A (en) * 2002-01-10 2003-07-16 엘지.필립스디스플레이(주) Gun for Color CRT

Also Published As

Publication number Publication date
JPS603840A (en) 1985-01-10

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