JPH0160452U - - Google Patents
Info
- Publication number
- JPH0160452U JPH0160452U JP15498187U JP15498187U JPH0160452U JP H0160452 U JPH0160452 U JP H0160452U JP 15498187 U JP15498187 U JP 15498187U JP 15498187 U JP15498187 U JP 15498187U JP H0160452 U JPH0160452 U JP H0160452U
- Authority
- JP
- Japan
- Prior art keywords
- proton beam
- sample
- vacuum
- current
- ring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005259 measurement Methods 0.000 claims description 5
- 238000005211 surface analysis Methods 0.000 claims description 5
- 239000012212 insulator Substances 0.000 claims description 3
- 230000001133 acceleration Effects 0.000 claims description 2
- 239000011810 insulating material Substances 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 1
Landscapes
- Analysing Materials By The Use Of Radiation (AREA)
- Electron Sources, Ion Sources (AREA)
Description
第１図は本考案の表面解析装置の試料に陽子ビ
ームを当てている状態を示す全体構成図。第２図
は陽子ビーム量を計測している状態の超高真空チ
ヤンバのみの断面図。第３図は本考案に於て用い
るアクセプタンススリツトの正面図。第４図はビ
ーム量計測装置部分の断面図。第５図は試料計測
を行なつている状態のアクセプタンススリツト断
面図。第６図は従来例の表面解析装置に於て試料
計測時の超高真空チヤンバ断面図。第７図は従来
例の表面解析装置に於てビーム計測を行なつてい
る時の超高真空チヤンバ断面図。第８図は従来例
のアクセプタンススリツト正面図。
１……イオン源、２……マグネツト、３……加
減速管、４……Ｑレンズ、５……位置検出器、８
……超高真空チヤンバ、９……アクセプタンスス
リツト、１０……試料、１１……オリフイス、１
２……ホルダ、１３……マニピユレータ、１４…
…シヤツタ、１５……開口、１８……フイードス
ルー、１９……フイードスルー、２０……フアラ
デーカツプ、２２，２３……スリツト、２５……
円弧板、２６……連結棒、２７……回転軸、２８
……二次電子収集筒、２９……絶縁物、３０……
穴、３１〜３４……真空排気装置、３６……ビー
ム通し穴、３７……絶縁物、３８……円環、３９
……接地板、４０……奥通し穴。
FIG. 1 is an overall configuration diagram showing a state in which a proton beam is applied to a sample of the surface analysis apparatus of the present invention. Figure 2 is a cross-sectional view of only the ultra-high vacuum chamber in a state where the amount of proton beam is being measured. FIG. 3 is a front view of the acceptance slit used in the present invention. FIG. 4 is a cross-sectional view of the beam amount measuring device. FIG. 5 is a cross-sectional view of the acceptance slit during sample measurement. FIG. 6 is a sectional view of an ultra-high vacuum chamber during sample measurement in a conventional surface analysis device. FIG. 7 is a sectional view of an ultra-high vacuum chamber during beam measurement in a conventional surface analysis device. FIG. 8 is a front view of a conventional acceptance slit. 1... Ion source, 2... Magnet, 3... Acceleration/deceleration tube, 4... Q lens, 5... Position detector, 8
...Ultra-high vacuum chamber, 9...Acceptance slit, 10...Sample, 11...Orifice, 1
2...Holder, 13...Manipulator, 14...
...Shutter, 15...Opening, 18...Feed through, 19...Feed through, 20...Farada cup, 22, 23...Slit, 25...
Arc plate, 26... Connecting rod, 27... Rotating shaft, 28
...Secondary electron collecting tube, 29...Insulator, 30...
Holes, 31-34...Evacuation device, 36...Beam through hole, 37...Insulator, 38...Circle, 39
...Ground plate, 40...Deep through hole.
Claims (1)
源１と、真空中に於て陽子ビーム軌道を曲げるマ
グネツト２と、真空中に於てマグネツト２を通つ
た陽子を加速して試料に当て試料で散乱された陽
子のうち、Θ１８０°の散乱角で散乱された陽
子を減速する加減速管３と、真空中に於て陽子ビ
ームを絞るＱレンズ４と、超高真空中に於て試料
１０を保持する超高真空チヤンバ８と、試料１０
の直前に設けられ入射陽子ビームを通し試料で散
乱された陽子ビームのうち散乱角Θが１８０°−
ε≦Θ≦１８０°のもののみを通す適数の開口１
５を有するアクセプタンススリツト９と、散乱さ
れ減速された陽子ビームの運動エネルギー分布を
測定するアナライザーとよりなる表面解析装置に
おいて、アクセプタンススリツト９は回転できる
円弧板２５に散乱ビームを通す適当な拡り角２ε
を持つた開口１５と、ビーム計測のための計測器
が設けられており開口１５の背面には絶縁物２９
を介して二次電子収集筒２８が設けられ試料１０
のイオン電流と二次電子収集筒２８の二次電子電
流とを相加して電流計Ａ０で計測できるようにし
た事を特徴とする表面解析装置。 (2) ビーム計測のための計測器は、アクセプタ
ンススリツトのビーム通し穴３６より小さい奥通
し穴４０を穿つた円環３８と、円環３８とアクセ
プタンススリツト９の円弧板２５とを連結する絶
縁物３７と、円環３８の背後に設けられたフアラ
デーカツプ２０と、フアラデーカツプの電流を測
定する電流計Ａ１と、円環３８の電流を測定する
電流計Ａ２とよりなる事を特徴とする実用新案登
録請求の範囲第(1)項記載の表面解析装置。[Claims for Utility Model Registration] (1) An ion source 1 that generates a proton beam in a vacuum, a magnet 2 that bends the trajectory of the proton beam in a vacuum, and an ion source 1 that generates a proton beam in a vacuum, and a magnet 2 that passes through the magnet 2 in a vacuum. An acceleration/deceleration tube 3 that accelerates protons, applies them to a sample, and decelerates the protons scattered by the sample at a scattering angle of Θ180°, and a Q lens 4 that focuses the proton beam in vacuum. An ultra-high vacuum chamber 8 that holds a sample 10 in an ultra-high vacuum, and a sample 10
The scattering angle Θ of the proton beam that passes through the incident proton beam and is scattered by the sample is set just before the incident proton beam.
Appropriate number of apertures 1 that pass only those with ε≦Θ≦180°
5 and an analyzer for measuring the kinetic energy distribution of the scattered and decelerated proton beam. angle 2ε
An insulating material 29 is provided on the back side of the aperture 15, and a measuring device for beam measurement is provided.
A secondary electron collection tube 28 is provided through the sample 10.
A surface analysis device characterized in that the ion current of the ion current and the secondary electron current of the secondary electron collection cylinder 28 can be added and measured with an ammeter A0 . (2) The measuring instrument for beam measurement connects a ring 38 with a deep through hole 40 that is smaller than the beam through hole 36 of the acceptance slit, and connects the ring 38 and the arc plate 25 of the acceptance slit 9. It is characterized by comprising an insulator 37, a Faraday cup 20 provided behind the ring 38, an ammeter A1 that measures the current of the Faraday cup, and an ammeter A2 that measures the current of the ring 38. A surface analysis device according to claim (1) of the utility model registration.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15498187U JPH0622916Y2 (en) | 1987-10-09 | 1987-10-09 | Surface analyzer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15498187U JPH0622916Y2 (en) | 1987-10-09 | 1987-10-09 | Surface analyzer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0160452U true JPH0160452U (en) | 1989-04-17 |
| JPH0622916Y2 JPH0622916Y2 (en) | 1994-06-15 |
Family
ID=31432194
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15498187U Expired - Lifetime JPH0622916Y2 (en) | 1987-10-09 | 1987-10-09 | Surface analyzer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0622916Y2 (en) |
-
1987
- 1987-10-09 JP JP15498187U patent/JPH0622916Y2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0622916Y2 (en) | 1994-06-15 |
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