JPH0165132U - - Google Patents

Info

Publication number
JPH0165132U
JPH0165132U JP1987159875U JP15987587U JPH0165132U JP H0165132 U JPH0165132 U JP H0165132U JP 1987159875 U JP1987159875 U JP 1987159875U JP 15987587 U JP15987587 U JP 15987587U JP H0165132 U JPH0165132 U JP H0165132U
Authority
JP
Japan
Prior art keywords
magnetic field
electrodes
plasma
discharge
processing apparatus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1987159875U
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1987159875U priority Critical patent/JPH0165132U/ja
Publication of JPH0165132U publication Critical patent/JPH0165132U/ja
Pending legal-status Critical Current

Links

Landscapes

  • Drying Of Semiconductors (AREA)

Description

【図面の簡単な説明】
第1図は、本考案の一実施例のプラズマ処理装
置の構成図、第2図は、第1図のA―A視図、第
3図は、本考案の他の実施例のプラズマ処理装置
の第2図と同一部位図である。 1……処理室、2……電磁石、3……試料、4
……試料台、5……電源、6……永久磁石。

Claims (1)

    【実用新案登録請求の範囲】
  1. 電極間の電界と磁場発生手段により磁界との併
    用により放電を生じさせ、該放電で処理ガスをプ
    ラズマ化し、該プラズマを利用して試料を処理す
    る装置において、磁界強度、極性を個別に制御可
    能な前記磁界発生手段を前記電極間外で該電極に
    対応して配設したことを特徴とするプラズマ処理
    装置。
JP1987159875U 1987-10-21 1987-10-21 Pending JPH0165132U (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1987159875U JPH0165132U (ja) 1987-10-21 1987-10-21

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1987159875U JPH0165132U (ja) 1987-10-21 1987-10-21

Publications (1)

Publication Number Publication Date
JPH0165132U true JPH0165132U (ja) 1989-04-26

Family

ID=31441459

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1987159875U Pending JPH0165132U (ja) 1987-10-21 1987-10-21

Country Status (1)

Country Link
JP (1) JPH0165132U (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013149722A (ja) * 2012-01-18 2013-08-01 Tokyo Electron Ltd 基板処理装置

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013149722A (ja) * 2012-01-18 2013-08-01 Tokyo Electron Ltd 基板処理装置
KR20190104436A (ko) * 2012-01-18 2019-09-09 도쿄엘렉트론가부시키가이샤 기판 처리 방법
US10651012B2 (en) 2012-01-18 2020-05-12 Tokyo Electron Limited Substrate processing method

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