JPH0170353U - - Google Patents
Info
- Publication number
- JPH0170353U JPH0170353U JP1987166036U JP16603687U JPH0170353U JP H0170353 U JPH0170353 U JP H0170353U JP 1987166036 U JP1987166036 U JP 1987166036U JP 16603687 U JP16603687 U JP 16603687U JP H0170353 U JPH0170353 U JP H0170353U
- Authority
- JP
- Japan
- Prior art keywords
- metal layer
- semiconductor chip
- metal
- metal layers
- filler
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Description
第１図は本考案の実施例に係わるダイオードの
断面図、第２図は第１図の―線部分の断面図
、第３図は支持板の形成方法を説明するための断
面図、第４図は従来のダイオードの断面図、第５
図は変形例の支持板の一部を示す断面図である。
１１……ダイオードチツプ、１３……支持板、
１７……第１の金属層、１８……第２の金属層、
１９……第３の金属層、２０……貫通孔、２１…
…充填物。
FIG. 1 is a sectional view of a diode according to an embodiment of the present invention, FIG. 2 is a sectional view taken along the line - in FIG. The figure is a cross-sectional view of a conventional diode.
The figure is a sectional view showing a part of a support plate of a modified example. 11...Diode chip, 13...Support plate,
17...first metal layer, 18...second metal layer,
19...Third metal layer, 20...Through hole, 21...
...filling.
Claims (1)
ツプ１１を固着した構造の半導体装置において、 前記支持板１３が、この一方の主面側の第１の
金属層１７と、この他方の主面側の第２の金属層
１８と、前記第１及び第２の金属層１７，１８の
相互間に配置され且つ前記半導体チツプ１１の下
部に対応する領域に貫通孔２０を有している第３
の金属層１９と、前記貫通孔２０に充填された充
填物２１とから成り、 前記第１及び第２の金属層１７，１８が熱伝導
性の優れた金属から成り、 前記第３の金属層１９が前記第１及び第２の金
属層１７，１８よりも熱膨張係数が小さく且つ前
記第１及び第２の金属層１７，１８よりも前記半
導体チツプ１１の熱膨張係数に近い熱膨張係数を
有する材料から成り、 前記充填物２１が前記第３の金属層１９よりも
熱伝導性が優れた材料から成り、 前記貫通孔２０が平面的に見て前記半導体チツ
プ１１の周縁よりも内側に配置されていることを
特徴とする半導体装置。 (2) 前記充填物２１が前記第１及び第２の金属
層１７，１８の延在部であり且つ前記半導体チツ
プ１１に相似の平面形状を有するものである実用
新案登録請求の範囲第１項記載の半導体装置。 (3) 前記第１の金属層１７が前記第２の金属層
１８と同一材料から成り、前記充填物２１が前記
第１及び第２の金属層１７，１８と同一材料から
成る実用新案登録請求の範囲第１項又は第２項記
載の半導体装置。[Claims for Utility Model Registration] (1) In a semiconductor device having a structure in which a semiconductor chip 11 is fixed on a support plate 13 having a heat dissipation function, the support plate 13 has a first metal layer on one main surface side. 17, a second metal layer 18 on the other main surface side, and a through hole in a region located between the first and second metal layers 17 and 18 and corresponding to the lower part of the semiconductor chip 11. 3rd having 20
a metal layer 19 and a filler 21 filled in the through hole 20, the first and second metal layers 17 and 18 are made of a metal with excellent thermal conductivity, and the third metal layer 19 has a thermal expansion coefficient smaller than that of the first and second metal layers 17 and 18 and closer to the thermal expansion coefficient of the semiconductor chip 11 than the first and second metal layers 17 and 18. The filler 21 is made of a material having better thermal conductivity than the third metal layer 19, and the through hole 20 is arranged inside the periphery of the semiconductor chip 11 when viewed in plan. A semiconductor device characterized by: (2) Utility model registration claim 1, wherein the filler 21 is an extension of the first and second metal layers 17 and 18 and has a planar shape similar to the semiconductor chip 11. The semiconductor device described. (3) A utility model registration request in which the first metal layer 17 is made of the same material as the second metal layer 18, and the filler 21 is made of the same material as the first and second metal layers 17 and 18. The semiconductor device according to the range 1 or 2.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1987166036U JPH0739238Y2 (en) | 1987-10-28 | 1987-10-28 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1987166036U JPH0739238Y2 (en) | 1987-10-28 | 1987-10-28 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0170353U true JPH0170353U (en) | 1989-05-10 |
| JPH0739238Y2 JPH0739238Y2 (en) | 1995-09-06 |
Family
ID=31453062
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1987166036U Expired - Lifetime JPH0739238Y2 (en) | 1987-10-28 | 1987-10-28 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0739238Y2 (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6027151A (en) * | 1983-07-25 | 1985-02-12 | Sumitomo Electric Ind Ltd | Composite metallic filament for mounting semiconductor element |
| JPS60165744A (en) * | 1984-02-09 | 1985-08-28 | Toshiba Corp | Semiconductor rectifier element |
-
1987
- 1987-10-28 JP JP1987166036U patent/JPH0739238Y2/en not_active Expired - Lifetime
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6027151A (en) * | 1983-07-25 | 1985-02-12 | Sumitomo Electric Ind Ltd | Composite metallic filament for mounting semiconductor element |
| JPS60165744A (en) * | 1984-02-09 | 1985-08-28 | Toshiba Corp | Semiconductor rectifier element |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0739238Y2 (en) | 1995-09-06 |
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