JPH0170863U - - Google Patents
Info
- Publication number
- JPH0170863U JPH0170863U JP1987162826U JP16282687U JPH0170863U JP H0170863 U JPH0170863 U JP H0170863U JP 1987162826 U JP1987162826 U JP 1987162826U JP 16282687 U JP16282687 U JP 16282687U JP H0170863 U JPH0170863 U JP H0170863U
- Authority
- JP
- Japan
- Prior art keywords
- suction port
- vacuum
- chamber
- ion
- processing apparatus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000010884 ion-beam technique Methods 0.000 claims description 2
- 239000000758 substrate Substances 0.000 claims 3
- 238000005086 pumping Methods 0.000 claims 2
- 230000001678 irradiating effect Effects 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 2
Landscapes
- Physical Vapour Deposition (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Description
第１図は、この考案の一実施例に係るイオン処
理装置を示す概略図である。第２図は、第１図中
のクライオポンプの概略構造の一例を示す縦断面
図である。第３図および第４図は、それぞれ、従
来のイオン処理装置の例を示す概略図である。
２……イオンビーム、３……処理室、４，５…
…真空予備室、２１〜４１……真空弁、６０，７
０……クライオポンプ、６０１，７０１……主吸
入口、６０２，７０２……補助吸入口。
FIG. 1 is a schematic diagram showing an ion processing apparatus according to an embodiment of this invention. FIG. 2 is a vertical cross-sectional view showing an example of the schematic structure of the cryopump in FIG. 1. FIGS. 3 and 4 are schematic diagrams showing examples of conventional ion processing apparatuses, respectively. 2...Ion beam, 3...Processing chamber, 4, 5...
...Vacuum preliminary chamber, 21-41...Vacuum valve, 60,7
0...Cryopump, 601,701...Main suction port, 602,702...Auxiliary suction port.
Claims (1)
板を処理するための処理室に、真空弁を介して、
基板を大気側と処理室間で搬送するための真空予
備室を隣接させた構造のイオン処理装置において
、排気速度が相対的に大きい主吸入口と相対的に
小さい補助吸入口とを有し両吸入口から同時に真
空排気可能なクライオポンプを設けて、その主吸
入口側から前記処理室を、補助吸入口側から前記
真空予備室をそれぞれ真空排気できるようにした
ことを特徴とするイオン処理装置。 A processing chamber for processing the substrate by irradiating the substrate with an ion beam in a vacuum is provided through a vacuum valve.
In an ion processing apparatus with a structure in which a vacuum preliminary chamber for transporting substrates between the atmosphere side and a processing chamber is adjacent to each other, an ion processing apparatus having a main suction port with a relatively high pumping speed and an auxiliary suction port with a relatively small pumping speed. An ion processing apparatus characterized in that a cryopump capable of simultaneously evacuating suction ports is provided, and the processing chamber can be evacuated from the main suction port side, and the vacuum preparatory chamber can be evacuated from the auxiliary suction port side. .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1987162826U JPH0170863U (en) | 1987-10-24 | 1987-10-24 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1987162826U JPH0170863U (en) | 1987-10-24 | 1987-10-24 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0170863U true JPH0170863U (en) | 1989-05-11 |
Family
ID=31447009
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1987162826U Pending JPH0170863U (en) | 1987-10-24 | 1987-10-24 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0170863U (en) |
-
1987
- 1987-10-24 JP JP1987162826U patent/JPH0170863U/ja active Pending
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