JPH0176033U - - Google Patents

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Publication number
JPH0176033U
JPH0176033U JP1987171303U JP17130387U JPH0176033U JP H0176033 U JPH0176033 U JP H0176033U JP 1987171303 U JP1987171303 U JP 1987171303U JP 17130387 U JP17130387 U JP 17130387U JP H0176033 U JPH0176033 U JP H0176033U
Authority
JP
Japan
Prior art keywords
cathode
plasma
magnetic field
respect
etching apparatus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1987171303U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1987171303U priority Critical patent/JPH0176033U/ja
Publication of JPH0176033U publication Critical patent/JPH0176033U/ja
Pending legal-status Critical Current

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  • Drying Of Semiconductors (AREA)

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は、本考案の一実施例のプラズマエツチ
ング装置の要部縦断面図である。 10…陰極、20…陽極、30…処理室、40
…高周波電源、50…永久磁石、52…モータ、
60…試料。
FIG. 1 is a longitudinal sectional view of a main part of a plasma etching apparatus according to an embodiment of the present invention. 10... Cathode, 20... Anode, 30... Processing chamber, 40
...High frequency power supply, 50...Permanent magnet, 52...Motor,
60...Sample.

Claims (1)

【実用新案登録請求の範囲】 1 陰極と陽極とを平行に対向して有する処理室
内でエツチングガスを磁場が付与された放電によ
りプラズマ化し該プラズマを利用して前記陰極に
設置された試料をエツチングする装置において、
前記陽極の前記陰極の反対側で前記試料面に対し
て傾斜する面内で磁場発生手段を回動可能に設け
たことを特徴とするプラズマエツチング装置。 2 前記試料面に対する前記傾斜面の角度を調節
可能とした実用新案登録請求の範囲第1項記載の
プラズマエツチング装置。
[Claims for Utility Model Registration] 1. Etching gas is turned into plasma by a discharge applied with a magnetic field in a processing chamber having a cathode and an anode facing each other in parallel, and the plasma is used to etch a sample placed on the cathode. In a device that
A plasma etching apparatus characterized in that a magnetic field generating means is provided rotatably in a plane inclined with respect to the sample surface on the opposite side of the anode to the cathode. 2. The plasma etching apparatus according to claim 1, wherein the angle of the inclined surface with respect to the sample surface is adjustable.
JP1987171303U 1987-11-11 1987-11-11 Pending JPH0176033U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1987171303U JPH0176033U (en) 1987-11-11 1987-11-11

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1987171303U JPH0176033U (en) 1987-11-11 1987-11-11

Publications (1)

Publication Number Publication Date
JPH0176033U true JPH0176033U (en) 1989-05-23

Family

ID=31463015

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1987171303U Pending JPH0176033U (en) 1987-11-11 1987-11-11

Country Status (1)

Country Link
JP (1) JPH0176033U (en)

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