JPH0242427U - - Google Patents
Info
- Publication number
- JPH0242427U JPH0242427U JP12197988U JP12197988U JPH0242427U JP H0242427 U JPH0242427 U JP H0242427U JP 12197988 U JP12197988 U JP 12197988U JP 12197988 U JP12197988 U JP 12197988U JP H0242427 U JPH0242427 U JP H0242427U
- Authority
- JP
- Japan
- Prior art keywords
- cathode
- side magnet
- high frequency
- forms
- chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 claims description 4
- 239000000758 substrate Substances 0.000 claims description 2
- 230000005684 electric field Effects 0.000 claims 2
- 239000012495 reaction gas Substances 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 description 1
Description
第１図及び第２図は本考案の薄膜形成装置の１
実施例の正面図及び一部の平面図、第３図は従来
例の正面図である。
１……反応チヤンバ、２……カソード電極、３
……アノード電極、４……薄膜形成用基板、５…
…高周波電源、６……カソード側磁石、７……ア
ノード側磁石。
Figures 1 and 2 show one of the thin film forming apparatuses of the present invention.
A front view and a partial plan view of the embodiment, and FIG. 3 is a front view of the conventional example. 1... Reaction chamber, 2... Cathode electrode, 3
...Anode electrode, 4...Substrate for thin film formation, 5...
...High frequency power supply, 6... Cathode side magnet, 7... Anode side magnet.
Claims (1)
電極と、 前記チヤンバ内に前記カソード電極に平行に配
設され、薄膜形成用基板を内面に保持した平板状
のアノード電極と、 前記両電極に高周波電力を供給し前記両電極間
に高周波電界を形成する高周波電源と、 前記カソード電極の外側に配設され前記カソー
ド電極の内面近辺に前記電界にほぼ直交した磁界
を形成するカソード側磁石と、 前記アノード電極の外側に前記カソード側磁石
の磁極間隔より小なる磁極間隔で配設され、前記
基板の表面近辺に前記電界にほぼ直交した磁界を
形成するアノード側磁石と を備えた薄膜形成装置。[Claims for Utility Model Registration] A reaction chamber to which a reaction gas is supplied, a flat cathode electrode disposed within the chamber, and a flat cathode electrode disposed within the chamber in parallel to the cathode electrode for forming a thin film. a flat anode electrode holding a substrate on the inner surface; a high frequency power source that supplies high frequency power to both the electrodes and forms a high frequency electric field between the two electrodes; a cathode-side magnet that forms a magnetic field substantially perpendicular to the electric field in the vicinity; a cathode-side magnet disposed outside the anode electrode with a magnetic pole spacing smaller than the magnetic pole spacing of the cathode-side magnet; A thin film forming apparatus equipped with an anode side magnet that forms orthogonal magnetic fields.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12197988U JPH0614478Y2 (en) | 1988-09-16 | 1988-09-16 | Thin film forming equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12197988U JPH0614478Y2 (en) | 1988-09-16 | 1988-09-16 | Thin film forming equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0242427U true JPH0242427U (en) | 1990-03-23 |
| JPH0614478Y2 JPH0614478Y2 (en) | 1994-04-13 |
Family
ID=31369485
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12197988U Expired - Lifetime JPH0614478Y2 (en) | 1988-09-16 | 1988-09-16 | Thin film forming equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0614478Y2 (en) |
-
1988
- 1988-09-16 JP JP12197988U patent/JPH0614478Y2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0614478Y2 (en) | 1994-04-13 |
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