JPH01761A - semiconductor equipment - Google Patents

Abstract

(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

Detailed Description of the Invention [Industrial Application Field] The present invention relates to a semiconductor device, particularly a semiconductor device (hereinafter referred to as a semiconductor device) in which a gate electrode has an insulating film sidewall and metal silicide is formed on the source, drain, and gate electrodes. (abbreviated as a salicide structure semiconductor device).

[Conventional technology]

FIG. 3 shows an example of the structure of a conventional semiconductor device, particularly an MO8 type semiconductor device with a salicide structure.

In the figure, 301 is a P-type semiconductor substrate, 302 is an oxide film for each element, 303 is a gate oxide film, and 304 is a gate?
1! 305 is a low concentration N type impurity diffusion layer, 306 is an oxide film (Sins) or a nitride film (S is N+)
Sidewall, 307, source and drain diffusion layer, 3
08 is metal silicide.

An example of the method for manufacturing the semiconductor device is shown in FIG. 4(a).
, shown in (b).

Step (1)...FIG. 4(a) On a P-type semiconductor substrate 401, an oxide 112402 for element isolation, a gate oxide film 403, a gate electrode 404, a low concentration N-type impurity diffusion layer 405, and an oxide are formed on a P-type semiconductor substrate 401 using a well-known technique. membrane or nitride film sidewall 406 ion implantation permeation [410
, a source/drain diffusion layer 407 is formed.

Step (2)...FIG. 4(b) After removing the memory-resistant ion/implantation/transmission film 410, metal is formed on the entire surface and thermal annealing is performed to form the gate electrode 40.
After metal silicide 408 is formed only on 4 and source/drain diffusion layers 407, selective etching is performed to remove unreacted metal.

[The problem that the invention attempts to solve]

However, in the above-mentioned conventional technology, an oxide film (SiO
Regardless of the nitride film (S is N a ), the sidewall contains Si. This is the manufacturing method step (2)
) reacts with the metal to form metal silicide during thermal annealing, and as shown in FIG.
There was a problem that the connection was made via 08.

The present invention is intended to solve these problems, and its purpose is to provide a salicide semiconductor device structure that prevents reactions between sidewalls and metal and prevents short-circuits between source/drain and gate electrodes. It's about doing.

[Means for solving problems]

The semiconductor device of the present invention is a semiconductor device having a salicide structure in which a gate electrode includes an insulating film sidewall, and is characterized in that the insulating film sidewall does not contain St.

〔Example〕

The structure of the semiconductor device of the present invention will be explained below with reference to FIG.

In the figure, 101 is a P-type semiconductor substrate, 102 is an oxide film for element isolation, 103 is a gate oxide film, 104 is a gate electrode, 105 is a low concentration N-type impurity diffusion layer, and 106 is an Alt
os sidewall, 107 is a source/drain diffusion layer, and 108 is a metal silicide.

An example of the method for manufacturing the semiconductor device is shown in FIGS. 2(a) to 2(a).
Shown in (e).

Step (1)...FIG. 2(a) Elements m are formed on the P-type semiconductor substrate 201 by a well-known technique.
oxide film 202, gate oxide film 203, gate electrode 20
4. Form a low concentration N-type impurity diffusion layer 205.

Step (2...Figure 2(b)) 3000 ml of AiO,!209 is grown by chemical vapor deposition method.
~6000 people will be formed.

Step (3)...Figure 2(e) By etching the entire surface with reactive ions, Al! An OS sidewall 206 is formed.

Step (4)...FIG. 2(d) Part of the P-type semiconductor substrate 201 and the gate ffl[
Ion implantation transmission 1a210 on 204 at 900℃~10
Form 50 to 200 people using thermal oxidation method at 00℃.

N-type high concentration impurity ion implantation, 900°C to 950°
A source/drain diffusion layer 207 is formed by C heat treatment.

Step 5)...FIG. 2(e) After removing the ion implantation permeable film 210 with HF, T
s 1CO1W or other metal is formed by sputtering with 200 to 1000 people, and heated to 600°C or more using a halogen lamp.
By annealing at 800° C., a metal silicide 208 is formed only on the gate electrode 4 and the source/drain diffusion layer 207. Unreacted metals can be easily removed with a mixture of ammonia, peroxide, and water.

In this example, A1. O, was used, but in addition, AlNCu
It is also possible to use a film of O, Cu*O, or the like.

〔Effect of the invention〕

As described above, according to the invention, the sidewall is made of Si.
Since it does not contain metal silicide, there is no possibility that metal reacts with Si in the sidewall to form metal silicide on the sidewall when metal silicide is formed. This has the effect that it is possible to provide a semiconductor device with an excellent side-side structure in which the gate electrode and the source/drain diffusion layer are sufficiently separated.

[BRIEF DESCRIPTION OF THE DRAWINGS] FIG. 1 is a cross-sectional view showing the structure of the semiconductor device of the present invention, FIGS. 2(a) to (e) are cross-sectional views showing the manufacturing process of the semiconductor device of the present invention, and FIG. 4(a) and 4(b) are cross-sectional views showing steps of a conventional semiconductor device manufacturing method; FIG. FIG. 5 is a cross-sectional view showing problems with a conventional semiconductor device M. 101.201.301.401.501...P-type semiconductor substrate 102.202.302.402.502...Oxide film for element isolation 103.203.303.403.503'...
Gate oxide film 104.204.304.404.504... Gate oxide film 105.205.305.405.505... N-type low concentration impurity diffusion layer 106.206, AI, Os sidewall 306.
406.50B...Oxide film (Sin) or nitride 1a (S i s N -) sidewall 107
．． 207.307.407.507 ... Source self-drain 108.208.308.408.50g ... Metal silicide 20.9 ・A I,, O, film 210.410 ... Ion implantation permeable film or more Applicant Seifu Epunun Co., Ltd. Agent Patent Attorney Tsutomu Mogami and 1 other person

Claims (1)

[Claims] 1) A semiconductor device in which a gate electrode has an insulating film sidewall and metal silicide is formed on the source, drain, and gate electrodes, wherein the insulating film sidewall does not contain Si.