JPH0180961U - - Google Patents

Info

Publication number
JPH0180961U
JPH0180961U JP1987177677U JP17767787U JPH0180961U JP H0180961 U JPH0180961 U JP H0180961U JP 1987177677 U JP1987177677 U JP 1987177677U JP 17767787 U JP17767787 U JP 17767787U JP H0180961 U JPH0180961 U JP H0180961U
Authority
JP
Japan
Prior art keywords
type layer
layer
light
receiving surface
photoactive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1987177677U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1987177677U priority Critical patent/JPH0180961U/ja
Publication of JPH0180961U publication Critical patent/JPH0180961U/ja
Pending legal-status Critical Current

Links

Classifications

    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第１図は本考案光起電力装置を示す模式的断面
図で、１は透明基板、２は受光面電極、３１ｐは
第１ｐ型層、３２ｐは第２ｐ型層、３１ｉは第１
ｉ型層、３２ｉは第２ｉ型層、３ｎはｎ型層、４
は背面電極をそれぞれ示している。 FIG. 1 is a schematic cross-sectional view showing the photovoltaic device of the present invention, in which 1 is a transparent substrate, 2 is a light-receiving surface electrode, 31p is a first p-type layer, 32p is a second p-type layer, and 31i is a first p-type layer.
i-type layer, 32i is second i-type layer, 3n is n-type layer, 4
indicate the back electrodes, respectively.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 光入射方向から見て、受光面電極と、該受光面
電極の上に水素化アモルフアスシリコンを主体と
して、ｐ型層、光活性層を含むｉ型層、ｎ型層を
順次積層した半導体膜と、該半導体膜の上に被着
された背面電極と、を備え、上記半導体膜中のｐ
型層は、ｉ型層側に光活性層より広い光学的バン
ドギヤツプを持ち、透明度の高い第１ｐ型層と、
受光面電極側に当該第１ｐ型層より高いキヤリア
濃度と薄い膜厚を持つ第２ｐ型層とで構成される
と共に、ｉ型層は、ｎ型層側に主に光キヤリアを
発生し光活性層となる第１ｉ型層と、ｐ型層側に
当該第１ｉ型層より広い光学的バンドギヤツプと
薄い膜厚を持つ第２ｉ型層で構成されることを特
徴とした光起電力装置。 Viewed from the direction of light incidence, a semiconductor film consisting of a light-receiving surface electrode, and a p-type layer, an i-type layer including a photoactive layer, and an n-type layer made of hydrogenated amorphous silicon are sequentially laminated on the light-receiving surface electrode. and a back electrode deposited on the semiconductor film,
The type layer has an optical bandgap wider than the photoactive layer on the i-type layer side and a highly transparent first p-type layer;
The second p-type layer has a higher carrier concentration and a thinner film thickness than the first p-type layer on the light-receiving surface electrode side, and the i-type layer mainly generates optical carriers and is photoactive on the n-type layer side. 1. A photovoltaic device comprising a first i-type layer serving as a layer, and a second i-type layer having a wider optical bandgap and a thinner film thickness than the first i-type layer on the p-type layer side.
JP1987177677U 1987-11-20 1987-11-20 Pending JPH0180961U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1987177677U JPH0180961U (en) 1987-11-20 1987-11-20

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1987177677U JPH0180961U (en) 1987-11-20 1987-11-20

Publications (1)

Publication Number Publication Date
JPH0180961U true JPH0180961U (en) 1989-05-30

Family

ID=31469334

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1987177677U Pending JPH0180961U (en) 1987-11-20 1987-11-20

Country Status (1)

Country Link
JP (1) JPH0180961U (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01253282A (en) * 1988-03-31 1989-10-09 Sharp Corp Amorphous solar cell

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57160175A (en) * 1981-03-28 1982-10-02 Semiconductor Energy Lab Co Ltd Photoelectric converter
JPS59163876A (en) * 1983-03-08 1984-09-14 Agency Of Ind Science & Technol Amorphous silicon solar cell
JPS59163875A (en) * 1983-03-08 1984-09-14 Agency Of Ind Science & Technol Amorphous silicon solar cell
JPS60242682A (en) * 1984-05-16 1985-12-02 Hitachi Maxell Ltd Semiconductor photoelectric conversion device
JPS6233479A (en) * 1985-08-07 1987-02-13 Agency Of Ind Science & Technol solar cells
JPS62106670A (en) * 1985-11-05 1987-05-18 Kanegafuchi Chem Ind Co Ltd Semiconductor device

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57160175A (en) * 1981-03-28 1982-10-02 Semiconductor Energy Lab Co Ltd Photoelectric converter
JPS59163876A (en) * 1983-03-08 1984-09-14 Agency Of Ind Science & Technol Amorphous silicon solar cell
JPS59163875A (en) * 1983-03-08 1984-09-14 Agency Of Ind Science & Technol Amorphous silicon solar cell
JPS60242682A (en) * 1984-05-16 1985-12-02 Hitachi Maxell Ltd Semiconductor photoelectric conversion device
JPS6233479A (en) * 1985-08-07 1987-02-13 Agency Of Ind Science & Technol solar cells
JPS62106670A (en) * 1985-11-05 1987-05-18 Kanegafuchi Chem Ind Co Ltd Semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01253282A (en) * 1988-03-31 1989-10-09 Sharp Corp Amorphous solar cell

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