JPH0187171U - - Google Patents
Info
- Publication number
- JPH0187171U JPH0187171U JP18303487U JP18303487U JPH0187171U JP H0187171 U JPH0187171 U JP H0187171U JP 18303487 U JP18303487 U JP 18303487U JP 18303487 U JP18303487 U JP 18303487U JP H0187171 U JPH0187171 U JP H0187171U
- Authority
- JP
- Japan
- Prior art keywords
- growth apparatus
- crystal growth
- single crystal
- melts
- partition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005192 partition Methods 0.000 claims description 9
- 239000013078 crystal Substances 0.000 claims description 6
- 239000000155 melt Substances 0.000 claims 4
- 239000002994 raw material Substances 0.000 claims 2
- 238000009413 insulation Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Description
第１図は本考案の模式的縦断面図、第２図は隔
壁部材の斜視図、第３図は同じく縦断面図である
。
１……チヤンバ、２……保温壁、３……坩堝、
４……ヒータ、５……保護筒、７……単結晶、８
……輻射スクリーン、９……隔壁部材、９ａ……
筒状隔壁部、９ｂ……鍔状隔壁部、９ｃ……支持
片。
FIG. 1 is a schematic longitudinal sectional view of the present invention, FIG. 2 is a perspective view of a partition member, and FIG. 3 is a longitudinal sectional view of the same. 1... Chamber, 2... Heat insulation wall, 3... Crucible,
4... Heater, 5... Protective cylinder, 7... Single crystal, 8
... Radiation screen, 9 ... Partition wall member, 9a ...
Cylindrical partition part, 9b... Flange-shaped partition part, 9c... Support piece.
Claims (1)
堝内に垂下され、融液面下では融液が相通じる状
態で、融液面を含むその上、下にわたつて単結晶
を引上げる内側領域と、原料を供給する外側環状
領域とに区分する筒状隔壁部を備えた隔壁部材を
有する単結晶成長装置において、前記隔壁部材の
筒状隔壁部に、前記外側環状領域の開面上方を覆
うべくその外周から外部上方に傾斜させて張り出
した鍔状隔壁部を設けたことを特徴とする単結晶
成長装置。 An inner region that is suspended in a crucible that heats and melts the raw material of the single crystal to be grown, and that pulls the single crystal above and below the melt surface, with the melts communicating with each other below the melt surface. , a single crystal growth apparatus having a partition member including a cylindrical partition part that is divided into an outer annular region for supplying raw materials, and a cylindrical partition part of the partition member to cover an upper part of the open surface of the outer annular region; A single-crystal growth apparatus characterized by having a flange-like partition wall extending upwardly from the outer circumference of the single-crystal growth apparatus.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18303487U JPH0523581Y2 (en) | 1987-11-30 | 1987-11-30 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18303487U JPH0523581Y2 (en) | 1987-11-30 | 1987-11-30 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0187171U true JPH0187171U (en) | 1989-06-08 |
| JPH0523581Y2 JPH0523581Y2 (en) | 1993-06-16 |
Family
ID=31474467
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18303487U Expired - Lifetime JPH0523581Y2 (en) | 1987-11-30 | 1987-11-30 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0523581Y2 (en) |
-
1987
- 1987-11-30 JP JP18303487U patent/JPH0523581Y2/ja not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0523581Y2 (en) | 1993-06-16 |