JPH0187560U - - Google Patents

Description

[Brief explanation of the drawing]

FIG. 1 is an enlarged view showing the internal structure of the transistor semiconductor device according to this invention, FIG. 2 is a sectional view, FIG. 3 is an electrical connection diagram, and FIGS. 4 and 5 are plan views of the conventional transistor semiconductor device. and a cross-sectional view. In FIGS. 1 and 2, 1 is a transistor pellet, 1a is a base part, 1b is an emitter part, 1c is a collector part, 2 is a base electrode column, and 3
is an emitter electrode column, 4 is a collector electrode column, 5 is a lead wire that connects the base portion 1a of the transistor pellet 1 and the base electrode column 2, and 6 is a lead wire that connects the emitter portion 1b of the transistor pellet 1 and the emitter electrode column 3. A lead wire 7 connects the collector portion 1c of the transistor pellet 1 and the collector electrode 4, 10 a bidirectional diode pellet, 10a the end N layer portion of the diode pellet 10, and 10b the diode pellets 10
End N located on the opposite side of the layer portion 10a
Layer sections 11 are bidirectional diode pellets, 1
1a is an end N-layer portion of the diode pellet 11; 11b is an end N-layer portion located opposite to the end N-layer portion 11a of the diode pellet 11; 12 is a bidirectional diode pellet; 12a is the end N layer portion of the diode pellet 12, 1
2b is an end N layer portion 13 located on the opposite side of the end N layer portion 12a of the diode pellet 12;
is the N layer end face portion 1 of the diode pellet 10
Lead wire connecting 0a and emitter electrode pillar 3, 1
4 is a lead wire connecting the N-layer end surface portion 10b of the diode pellet 10 and the base electrode column 2;
5 is a lead wire connecting the end N layer portion 11a of the diode pellet 11 and the collector electrode 4;
6 is a lead wire connecting the end N layer portion 11b of the diode pellet 11 and the base electrode column 2;
7 is a lead wire connecting the end N layer portion 12a of the diode pellet 12 and the collector electrode column 4;
18 is a lead wire connecting the end N layer portion 12b of the diode pellet 12 and the emitter electrode column 3; 8 is each pellet; 1, 10, 11, 12, each electrode 2, 3, 4 and each lead wire 5; ,6,7,13,1
4, 15, 16, 17, and 18, and 9 is a can that seals the above. Each electrode column 2
, 3 and 4 pass through the can and are used as external terminals. In the figure, 2 is the base, B, 3 is the emitter, E, 4
indicates the collector, C. In Fig. 3, TR is a transistor pellet, D1, D2, D3 are bidirectional diode pellets, B is a base electrode column, E is an emitter electrode column, and C
is the collector electrode column. FIG. 4 shows a typical example of a conventional transistor semiconductor device, and is an enlarged plan view of the internal structure, and FIG. 5 is an internal sectional view of FIG. 4. In Figures 4 and 5,
B is the base, E is the emitter, C is the collector, 1 is the transistor pellet, 1a is the base part of the pellet, 1b is the emitter part of the pellet,
1c is the collector portion of the pellet, 2 is the base electrode column, 3 is the emitter electrode column, 4 is the collector electrode column, 5 is the lead wire connecting the base portion of the pellet and the base electrode column, 6 is the emitter portion of the pellet. and the lead wire connecting the emitter electrode pillar,
7 is a lead wire connecting the collector portion of the pellet and the collector electrode column, 8 is a submount, and 9 is a sealing can. Each electrode column 2, 3, 4 has a can 9
Penetrate through and use as an external connection terminal. In the drawings, the same or corresponding parts are denoted by the same reference numerals.

Claims (1)

[Scope of utility model registration request] The internal structure of a transistor semiconductor device made of silicon includes a transistor pellet having a base part, an emitter part, and a collector part, and a five-layer PN junction structure called NPNPN, and the transistor pellet has a collector part and an emitter part. a bidirectional diode pellet connected in parallel between the parts; a bidirectional diode pellet connected in parallel between the base part and the emitter part of the transistor pellet; and a bidirectional diode pellet connected in parallel between the base part and the collector part of the transistor pellet. a bidirectional diode pellet connected in parallel to the transistor pellet, a base electrode pillar, an emitter electrode pillar, a collector electrode pillar, a lead wire connecting the base portion of the transistor pellet and the base electrode pillar, and a lead wire connecting the base portion of the transistor pellet and the base electrode pillar; A lead wire connecting the emitter part and the emitter electrode pillar, a lead wire connecting the collector part and the collector electrode pillar of the transistor pellet, and an N layer part forming both ends of the diode pellet that connects the base emitter. A lead wire connecting to each of the base and emitter and a lead wire connecting between the emitter and a lead wire connecting to each of the base and collector from the N layer portion forming both ends of the diode pellet forming the both ends of the diode pellet, and the lead wire connecting between the emitter and the base are connected to each other. Lead wires connecting each of the emitter and collector from the N layer portion forming both ends of the diode pellet, the transistor pellet, three bidirectional diode pellets, three electric poles, and nine wires. A transistor semiconductor device comprising a submount part for supporting all of the lead wires and a can for sealing each of the parts.