JPH0189966U - - Google Patents
Info
- Publication number
- JPH0189966U JPH0189966U JP18677787U JP18677787U JPH0189966U JP H0189966 U JPH0189966 U JP H0189966U JP 18677787 U JP18677787 U JP 18677787U JP 18677787 U JP18677787 U JP 18677787U JP H0189966 U JPH0189966 U JP H0189966U
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- melt
- substrate holder
- epitaxial growth
- liquid phase
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims description 22
- 239000000155 melt Substances 0.000 claims description 10
- 239000007791 liquid phase Substances 0.000 claims 5
- 230000005484 gravity Effects 0.000 claims 2
- 239000007788 liquid Substances 0.000 claims 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 1
- 229910052799 carbon Inorganic materials 0.000 claims 1
- 239000010453 quartz Substances 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 1
Landscapes
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Description
第１図は、この考案の一実施例を示す斜視図で
あり、基板がメルトの液面に対し略垂直になつた
状態を示している。第２図は、この考案の一実施
例を示す斜視図であり、基板がメルトの液面に対
し略水平になつた状態を示している。
図において、１は基板、２は基板保持部、３は
支持部、３ａはストツパ、４は支持棒を示す。
FIG. 1 is a perspective view showing an embodiment of this invention, showing a state in which the substrate is substantially perpendicular to the melt level. FIG. 2 is a perspective view showing an embodiment of this invention, showing a state in which the substrate is approximately horizontal to the melt level. In the figure, 1 is a substrate, 2 is a substrate holding part, 3 is a support part, 3a is a stopper, and 4 is a support rod.
Claims (1)
タキシヤル成長させるため前記基板を保持してメ
ルト中にデイツピングされる基板ホルダであつて
、 少なくとも一部の比重がメルトの比重よりも軽
く、メルト中にデイツピングした際該少なくとも
一部に浮力を受ける基板保持部と、 前記基板保持部がメルト中にデイツピングされ
ていない際には前記基板保持部の自重により基板
がメルトの液面に対して略垂直になり、前記基板
保持部がメルト中にデイツピングされている際に
は前記基板保持部が受ける前記浮力により基板が
メルトの液面に対し略水平になるように、前記基
板保持部を回動可能に支持する支持部とを備える
、液相エピタキシヤル成長用基板ホルダ。 (2) 前記メルトがＨｇ―Ｃｄ―Ｔｅ系メルトで
ある、実用新案登録請求の範囲第１項記載の液相
エピタキシヤル成長用基板ホルダ。 (3) 前記基板保持部がカーボンからなる、実用
新案登録請求の範囲第２項記載の液相エピタキシ
ヤル成長用基板ホルダ。 (4) 前記基板保持部が石英からなる、実用新案
登録請求の範囲第２項記載の液相エピタキシヤル
成長用基板ホルダ。[Claims for Utility Model Registration] (1) A substrate holder that holds the substrate and dips it into the melt in order to dip the substrate into the melt and perform liquid phase epitaxial growth, the substrate holder having at least a part of the specific gravity of the melt. a substrate holder which is lighter than the specific gravity of the substrate holder and receives buoyant force on at least a portion of the substrate holder when it is dipped in the melt; so that the substrate is substantially perpendicular to the liquid level of the melt, and when the substrate holding part is immersed in the melt, the buoyant force received by the substrate holding part makes the substrate substantially horizontal to the liquid level of the melt, A substrate holder for liquid phase epitaxial growth, comprising a support section that rotatably supports the substrate holding section. (2) The substrate holder for liquid phase epitaxial growth according to claim 1, wherein the melt is a Hg-Cd-Te based melt. (3) The substrate holder for liquid phase epitaxial growth according to claim 2, wherein the substrate holder is made of carbon. (4) The substrate holder for liquid phase epitaxial growth according to claim 2, wherein the substrate holder is made of quartz.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18677787U JPH0189966U (en) | 1987-12-07 | 1987-12-07 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18677787U JPH0189966U (en) | 1987-12-07 | 1987-12-07 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0189966U true JPH0189966U (en) | 1989-06-13 |
Family
ID=31477985
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18677787U Pending JPH0189966U (en) | 1987-12-07 | 1987-12-07 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0189966U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11330509A (en) * | 1998-05-07 | 1999-11-30 | Honda Motor Co Ltd | CBD film forming equipment |
| JP2006176369A (en) * | 2004-12-24 | 2006-07-06 | Kobe Steel Ltd | High pressure liquid-phase epitaxial growth apparatus |
-
1987
- 1987-12-07 JP JP18677787U patent/JPH0189966U/ja active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11330509A (en) * | 1998-05-07 | 1999-11-30 | Honda Motor Co Ltd | CBD film forming equipment |
| JP2006176369A (en) * | 2004-12-24 | 2006-07-06 | Kobe Steel Ltd | High pressure liquid-phase epitaxial growth apparatus |
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