JPH0189965U - - Google Patents
Info
- Publication number
- JPH0189965U JPH0189965U JP18677687U JP18677687U JPH0189965U JP H0189965 U JPH0189965 U JP H0189965U JP 18677687 U JP18677687 U JP 18677687U JP 18677687 U JP18677687 U JP 18677687U JP H0189965 U JPH0189965 U JP H0189965U
- Authority
- JP
- Japan
- Prior art keywords
- melt
- substrate holder
- substrate
- epitaxial growth
- shutter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims description 14
- 239000000155 melt Substances 0.000 claims 7
- 239000007791 liquid phase Substances 0.000 claims 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 1
- 229910052799 carbon Inorganic materials 0.000 claims 1
- 239000004973 liquid crystal related substance Substances 0.000 claims 1
- 239000010453 quartz Substances 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Description
第１図は、この考案の一実施例を示す正面図で
あり、シヤツタの閉じた状態を示している。第２
図は、第１図に示す実施例の側面図である。第３
図は、第１図と同様この考案の一実施例を示す正
面図であり、シヤツタの開いた状態を示している
。
図において、１は基板ホルダ、２はシヤツタ、
３ａ，３ｂは溝、４は基板、５は凹部を示す。
FIG. 1 is a front view showing an embodiment of this invention, showing the shutter in a closed state. Second
The figure is a side view of the embodiment shown in FIG. 1. Third
This figure is a front view showing an embodiment of this invention, similar to FIG. 1, and shows the shutter in an open state. In the figure, 1 is a substrate holder, 2 is a shutter,
3a and 3b are grooves, 4 is a substrate, and 5 is a recess.
Claims (1)
タキシヤル成長させるため基板を保持してメルト
中のデイツピングされる基板ホルダであつて、 基板ホルダをメルト中にデイツピングした際自
重によりも大きな浮力を受けるシヤツタを備え、 基板ホルダがメルト中にデイツピングされてい
ない際には前記シヤツタにより前記基板面が遮蔽
されており、基板ホルダがメルト中にデイツピン
グされている際には前記シヤツタが前記浮力によ
り上方に移動して開き、基板にメルトが接するよ
うにされている、液相エピタキシヤル成長用基板
ホルダ。 (2) 前記メルトがＨｇ―Ｃｄ―Ｔｅ系メルトで
ある、実用新案登録請求の範囲第１項記載の液晶
エピタキシヤル成長用基板ホルダ。 (3) 前記シヤツタがカーボンからなる、実用新
案登録請求の範囲第２項記載の液相エピタキシヤ
ル成長用基板ホルダ。 (4) 前記シヤツタが石英からなる、実用新案登
録請求の範囲第２項記載の液相エピタキシヤル成
長用基板ホルダ。[Scope of Claim for Utility Model Registration] (1) A substrate holder that holds a substrate and dips it in the melt in order to dip the substrate in the melt and perform liquid phase epitaxial growth, the substrate holder being dipped in the melt. When the substrate holder is not being dipped in the melt, the substrate surface is shielded by the shutter, and when the substrate holder is being dipped in the melt, the buoyancy force is larger than its own weight. A substrate holder for liquid phase epitaxial growth, wherein the shutter moves upward due to the buoyant force and opens so that the melt comes into contact with the substrate. (2) The substrate holder for liquid crystal epitaxial growth according to claim 1, wherein the melt is a Hg-Cd-Te based melt. (3) The substrate holder for liquid phase epitaxial growth according to claim 2, wherein the shutter is made of carbon. (4) The substrate holder for liquid phase epitaxial growth according to claim 2, wherein the shutter is made of quartz.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18677687U JPH0523585Y2 (en) | 1987-12-07 | 1987-12-07 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18677687U JPH0523585Y2 (en) | 1987-12-07 | 1987-12-07 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0189965U true JPH0189965U (en) | 1989-06-13 |
| JPH0523585Y2 JPH0523585Y2 (en) | 1993-06-16 |
Family
ID=31477984
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18677687U Expired - Lifetime JPH0523585Y2 (en) | 1987-12-07 | 1987-12-07 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0523585Y2 (en) |
-
1987
- 1987-12-07 JP JP18677687U patent/JPH0523585Y2/ja not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0523585Y2 (en) | 1993-06-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| IE41859L (en) | Electrodeposition of gold | |
| JPH0189966U (en) | ||
| JPS5827372U (en) | Liquid phase epitaxial growth equipment | |
| JPH0523585Y2 (en) | ||
| JPS61130409U (en) | ||
| JPS605480U (en) | Paint film forming equipment | |
| JPH04735U (en) | ||
| JPS61198279U (en) | ||
| JPH0246866U (en) | ||
| JPS6063934U (en) | Boat for liquid phase epitaxial growth | |
| Nakanishi et al. | Work Function Study of Iron Adsorption on Fe (001) and(110) | |
| JPS6310544U (en) | ||
| JPS642075U (en) | ||
| JPS62136582U (en) | ||
| JPS59169370U (en) | Substrate holder for liquid phase epitaxial film growth | |
| JPS6476995A (en) | Apparatus for growing liquid phase | |
| JPS5347381A (en) | Vacuum deposition method | |
| JPH0264965U (en) | ||
| JPS61199035U (en) | ||
| LOZANO | Almost trapped surface gravity water waves around islands[Ph. D. Thesis] | |
| JPS642074U (en) | ||
| JPS5880480U (en) | Chemical container in flush tank | |
| Ser et al. | Growth defects in natural quartz single crystals | |
| JPS6286958U (en) | ||
| JPS5865119U (en) | vehicle sun visor |