JPH0196086A - Compound crystal pulling device - Google Patents
Compound crystal pulling deviceInfo
- Publication number
- JPH0196086A JPH0196086A JP25157487A JP25157487A JPH0196086A JP H0196086 A JPH0196086 A JP H0196086A JP 25157487 A JP25157487 A JP 25157487A JP 25157487 A JP25157487 A JP 25157487A JP H0196086 A JPH0196086 A JP H0196086A
- Authority
- JP
- Japan
- Prior art keywords
- bell
- crucible
- pulling
- liquid sealant
- shaft
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000013078 crystal Substances 0.000 title claims description 29
- 150000001875 compounds Chemical class 0.000 title claims description 8
- 239000000565 sealant Substances 0.000 claims description 31
- 239000007788 liquid Substances 0.000 claims description 26
- 239000002994 raw material Substances 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 6
- 238000007789 sealing Methods 0.000 description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 5
- 229910052799 carbon Inorganic materials 0.000 description 5
- 239000003795 chemical substances by application Substances 0.000 description 4
- 239000010453 quartz Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 229910004613 CdTe Inorganic materials 0.000 description 3
- 229940065285 cadmium compound Drugs 0.000 description 3
- 150000001662 cadmium compounds Chemical class 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 2
- 235000009852 Cucurbita pepo Nutrition 0.000 description 1
- 241000219104 Cucurbitaceae Species 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910021397 glassy carbon Inorganic materials 0.000 description 1
- 239000003779 heat-resistant material Substances 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、ホットウォール法によ)化合物結晶、列えば
CdTe 、 C!d1 zZnxTI3 、0d1−
、MnXTe #OdS 8xT e 1−エ 等のカ
ドミウム化合物結晶を引上げる装置に関する。[Detailed Description of the Invention] [Industrial Field of Application] The present invention is directed to the production of compound crystals, such as CdTe, C! d1 zZnxTI3 , 0d1-
The present invention relates to an apparatus for pulling cadmium compound crystals such as MnXTe #OdS 8xT e 1-e and the like.
従来のホットウォール法による化合物結晶の引上装置に
は、ベルとるつぼを一体化した成長チャンバ内で原料融
液から結晶を引上げるもの(特開昭54−125585
号公報)、上下に分離可能とした成長チャンバ内のるつ
ぼから同様に結晶を引上げるもの(特開昭60−255
692号公報)などがあり、引上軸が成長チャンバを貫
通する部分や上下成長チャンバの接続部にシール部を有
している。これらのシール部にはE、 ol 等の液
体シール剤が用いられるが、引上軸に清って流下したシ
、蒸気となって拡散して原料融液中にシール剤が混入し
て、引上結晶の不純物となる。Conventional hot-wall method-based compound crystal pulling equipment includes a device that pulls crystals from a raw material melt in a growth chamber that integrates a bell and a crucible (Japanese Patent Laid-Open No. 125585-1985).
(Japanese Patent Laid-Open No. 60-255), which similarly pulls crystals from a crucible in a growth chamber that can be separated into upper and lower
No. 692), which has a sealing portion at the portion where the pulling shaft passes through the growth chamber and at the connection portion between the upper and lower growth chambers. Liquid sealants such as E and OL are used in these seals, but the liquid that flows down the pulling shaft spreads as vapor and mixes into the raw material melt, causing problems in the pulling process. It becomes an impurity in the upper crystal.
特に、カドミウム化合物を上記のような装置で引上げる
ときに、シール剤であるEtas が原料融液に混入
すると次式の反応によpBが融液中に取込まれ、カドミ
ウム化合物結晶の不純物となって、結晶の特性を阻害す
る。In particular, when a cadmium compound is pulled up using the above-mentioned equipment, if the sealing agent Etas is mixed into the raw material melt, pB will be incorporated into the melt through the reaction of the following equation, and it will become an impurity in the cadmium compound crystal. This impairs the properties of the crystal.
B、O,+ sea (Pit液中) ’F” 5 (
!do (固体)+2E(融液中)〔発明が解決しよう
とする問題点〕
本発明は、上記の問題点を解消し、シール剤が原料融液
中に混入することを防止する手段を付設して高純度の化
合物結晶をホントウオール法で容易に製造可能とした引
上装置を提供しようとするものである。B, O, + sea (in Pit liquid) 'F” 5 (
! do (solid) + 2E (in melt) [Problems to be solved by the invention] The present invention solves the above problems and provides means for preventing the sealant from being mixed into the raw material melt. The object of the present invention is to provide a pulling device that can easily produce high-purity compound crystals using the real wall method.
第1図は本発明の一具体例であって、高圧容器1内に、
原料融液2ft収容するるつぼとベルとを組合せた成長
チャンバ6を置く。るつぼは石英るつは4をカーボンる
つぼ5内に収納して形成することができる。ベルは2重
構造となし、はぼ一定の間隙を設けてるつぼに固定する
ことが好ましい。カーボンるつぼ5の周囲には液体シー
ル剤6を収容する環状溝7をるつぼ5と一体的に、また
は、はめ込み式で付設することができる。外側ベル8の
下端は上記環状溝7の液体シール剤6中に浸漬して気密
を保持する。また、カーボンるつぼ5の中程外周に環状
凸部9を設けて外側ベル8の内壁とすり合わせにより一
体化し、ベルをるつぼとともにるつぼ軸10によって回
転可能に支持することができる。このすり合わせにより
、上記環状溝7から蒸発する液体シール剤が成長チャン
バ3内に流入することを防いでいる。内側ベル11の下
端はカーボンるつ#Y5の上部外周12とす夛合わせを
形成し、気密を保持している。外側ベル8上方の頚部外
周に液体シール剤13を収容する環状溝1st−設け、
一方、内外のべ/l/8,11の頚部上方に引上軸16
を貫通して液体シール剤17を収容する受皿1日をベル
から分離して設け、上記外側ペル8の環状溝15中の液
体シール剤13中に下端を浸漬する環状脚部19を受皿
18の下に付設することによ)シール部を構成する。引
上軸16を貫通する受皿18の開口の下には、引上軸1
6の引上げを可能とし、受皿18から液体シール剤17
が流下することを防止する間隙を引上軸との間に設けた
円筒2oを*b付けることが好ましい。ま九、内側ベル
11の上端は外側ベル8の上端より上方に伸びチオ〕、
受皿18の底と接するようになっている。さらに、るつ
ぼ周囲にはメインヒータ21が、また、引上軸16のシ
ール部周囲には補助ヒータ22が配置されてお夛、結晶
成長の状況を監視するためのビューロッド23が高圧チ
ャンバ1を貫通して付設されている。FIG. 1 shows a specific example of the present invention, in which inside a high-pressure vessel 1,
A growth chamber 6, which is a combination of a crucible and a bell that accommodates 2 ft of raw material melt, is placed. The crucible can be formed by housing a quartz crucible 4 in a carbon crucible 5. It is preferable that the bell has a double structure and is fixed to the crucible with a constant gap between the bells. An annular groove 7 for accommodating the liquid sealant 6 can be provided around the carbon crucible 5 either integrally with the crucible 5 or in a fitted manner. The lower end of the outer bell 8 is immersed in the liquid sealant 6 in the annular groove 7 to maintain airtightness. Further, an annular convex portion 9 is provided at the middle of the outer periphery of the carbon crucible 5 and is integrated with the inner wall of the outer bell 8 by rubbing, so that the bell can be rotatably supported by the crucible shaft 10 together with the crucible. This alignment prevents the liquid sealant evaporated from the annular groove 7 from flowing into the growth chamber 3. The lower end of the inner bell 11 forms an overlap with the upper outer periphery 12 of the carbon crucible #Y5 to maintain airtightness. An annular groove 1st for accommodating the liquid sealant 13 is provided on the outer periphery of the neck above the outer bell 8,
On the other hand, a lifting shaft 16 is placed above the neck of the inner and outer sides of Be/l/8 and 11.
A saucer 19 for penetrating the liquid sealant 17 and accommodating the liquid sealant 17 is provided separately from the bell, and an annular leg 19 of the saucer 18 is provided with a lower end immersed in the liquid sealant 13 in the annular groove 15 of the outer pel 8. (by attaching it to the bottom) it forms a seal part. Below the opening of the saucer 18 that passes through the lifting shaft 16, there is a
liquid sealant 17 from the saucer 18.
It is preferable to attach a cylinder 2o with a gap between it and the pulling shaft to prevent the liquid from flowing down. 9. The upper end of the inner bell 11 extends upward from the upper end of the outer bell 8],
It comes into contact with the bottom of the saucer 18. Further, a main heater 21 is arranged around the crucible, an auxiliary heater 22 is arranged around the sealing part of the pulling shaft 16, and a view rod 23 for monitoring the state of crystal growth is arranged in the high pressure chamber 1. It is attached through.
なお、るつぼ材料としては、AtM 、 811N4゜
日1C,ガラス状カーボン、PEN等のガス不透過性耐
熱材も使用でき、これらの材料で一体成形するか、表面
にこれらの材料をコーティングして用いることもできる
。Note that gas-impermeable heat-resistant materials such as AtM, 811N4°day 1C, glassy carbon, and PEN can also be used as the crucible material, and these materials can be integrally molded or the surface can be coated with these materials. You can also do that.
〔作用]
従来のホントウオール法による引上装置では、(1)引
上軸のシール部からの液体シール剤の流下、及び(2)
上下成長チャンバの接続部やベルとるつぼの接続部から
のシール剤蒸気の混入が問題となっていた。[Function] In the conventional pulling device using the real wall method, (1) the liquid sealant flows down from the sealing part of the pulling shaft; and (2)
The problem was that sealant vapor got mixed in from the connection between the upper and lower growth chambers and the connection between the bell and the crucible.
(1)については、液体シール剤を収容する受皿′ の
開口部と引上軸との間隙を次の理由で充分に狭くするこ
とができなかった。即ち、引上軸と開口部の中心を完全
に一致させることができないので、中心のずれを許容す
るように引上軸と開口部に若干の遊びを必要とする。ま
た、引上軸と受皿は開口部において回転と上下の移動と
いう相対的な摺動が行なわれる。引上速度は1時間に数
日程度の摺動であるが、回転速度は1分間に10回転を
越えるために、回転に抵抗が生ずるとシール部に歪が加
わり、破損するおそれがある。また、この抵抗は引上軸
を振動させるために結晶成長を阻害する原因ともなる。Regarding (1), the gap between the opening of the saucer containing the liquid sealant and the pulling shaft could not be made sufficiently narrow for the following reasons. That is, since the centers of the pulling shaft and the opening cannot be perfectly aligned, some play is required between the pulling shaft and the opening to allow for the center deviation. Further, the lifting shaft and the receiving plate undergo relative sliding movement, such as rotation and vertical movement, in the opening. Although the pulling speed is about several days per hour, the rotation speed exceeds 10 revolutions per minute, so if resistance to rotation occurs, the seal part will be strained and may be damaged. Further, this resistance causes the pulling shaft to vibrate, thereby inhibiting crystal growth.
この点からも上記の遊びを必要としている。From this point of view as well, the above play is necessary.
本発明は、受皿の環状脚部を外側ベル上部の環状溝内の
液体シール剤に浸漬する構造を採用しているので、この
構造により上記遊びの機能を代替することができ、その
結果、引上軸と受皿開口部との間隙を従来のように大き
くする必要がなく、例えば、100〜200pm程度1
でせばめることができるので、液体7−ル剤の流下を十
分に防止することができる。しかし、この間隔をさらに
小さくすると、引上軸が受皿を引上げて気密を破るおそ
れがある。この現象は引上軸と受皿開口部の間隙の大き
さの外に、受皿の重量や引上速度にも依存する。The present invention adopts a structure in which the annular leg of the saucer is immersed in the liquid sealant in the annular groove on the upper part of the outer bell, so this structure can replace the function of the play, and as a result, the pull There is no need to increase the gap between the upper shaft and the opening of the saucer, for example, by about 100 to 200 pm.
Since it can be narrowed, it is possible to sufficiently prevent the liquid agent from flowing down. However, if this interval is made even smaller, there is a risk that the pulling shaft will pull up the tray and break the airtightness. This phenomenon depends not only on the size of the gap between the pulling shaft and the tray opening, but also on the weight and lifting speed of the tray.
なお、引上軸と受皿とのシールをより確実にするために
、引上軸と十分に狭い間隙を保持する同筒を受皿の開口
部下方に付設することもできる。Incidentally, in order to ensure a more reliable seal between the pulling shaft and the tray, a cylinder that maintains a sufficiently narrow gap with the pulling shaft may be attached below the opening of the tray.
また、上記の引上軸シール構造の採用によ)、ベル上方
の頚部の内径ft結晶よ)大きくすることができるので
、結晶生成に続いて一該頚部を介して簡単に結晶を取ル
出すことができる。In addition, by adopting the above-mentioned pulling shaft seal structure, the inner diameter of the neck above the bell (ft crystal) can be increased, so that the crystal can be easily pulled out through the neck after crystal formation. be able to.
(2)については、メインヒータに近接するシール部が
引上軸のシール部と比較して相当高温にさらされるため
にシール剤蒸発して成長チャンバ内に流入するという開
運があった。As for (2), there was some luck in that the sealing agent close to the main heater was exposed to considerably higher temperatures than the sealing portion of the pulling shaft, so the sealant evaporated and flowed into the growth chamber.
本発明は、ベルを2重構造となし、内側ベル下端をるつ
ぼ外周とすシ合わせにし、外側ベル下端をるつぼ周囲の
環状溝の液体シール剤に浸漬することにより、該環状溝
から発生するシール剤蒸気は2つのベルの間隙を上昇し
ても上方の比較的低温部で凝縮し、該間隙を再び流下す
るので、成長チャンバ内にシール剤蒸気が流入すること
はない。また、るつぼ周囲に環状凸部を設けて、外側ベ
ル内壁とすカ合わせることにより、上記シール剤蒸気が
ベルの間隙に上昇することを防ぐようにすることもでき
る。さらに内側ベル上端を外側ベル上端より上に伸ばし
、受皿の底に接触させることにより、シール剤蒸気が内
側ベル内、即ち、成長チャンバ内に流入することを防止
することもできる。この構造は高圧容器内と成長チャン
バ内の圧力差により外側ベル上方環状溝内の液体シール
剤を誤って押込むときにも、内側ベルの高い上端壁部に
より成長チャンバ内への流入を防ぐことができる。In the present invention, the bell has a double structure, the lower end of the inner bell is aligned with the outer periphery of the crucible, and the lower end of the outer bell is immersed in a liquid sealing agent in an annular groove surrounding the crucible, so that a seal is generated from the annular groove. Even if the sealant vapor rises through the gap between the two bells, it condenses in the upper relatively low temperature area and flows down the gap again, so that the sealant vapor does not flow into the growth chamber. Further, an annular convex portion may be provided around the crucible and aligned with the inner wall of the outer bell to prevent the sealant vapor from rising into the gap between the bells. Furthermore, by extending the upper end of the inner bell above the upper end of the outer bell and contacting the bottom of the saucer, it is also possible to prevent sealant vapor from flowing into the inner bell, ie, into the growth chamber. This structure prevents liquid sealant from flowing into the growth chamber by the high upper end wall of the inner bell even if the liquid sealant in the annular groove above the outer bell is accidentally pushed due to the pressure difference between the high-pressure container and the growth chamber. Can be done.
本発明はこのように引上軸の円滑な回転と引上げを可能
とし、成長結晶の取り出しを容易にし、2>=つ、シー
ル剤蒸気及び液体シール剤自体の成長チャンバ内への流
入を防ぐことができるので、不純物を混入することのな
い高純度化合物結晶をホットウォール法により確実に製
造することができるようになった。The present invention thus enables smooth rotation and pulling of the pulling shaft, facilitates the removal of the growing crystal, and prevents sealant vapor and liquid sealant itself from flowing into the growth chamber. As a result, it has become possible to reliably produce high-purity compound crystals without contaminating impurities by the hot wall method.
第1図の装置を用いて0dTe結晶を引上げた。 A 0dTe crystal was pulled using the apparatus shown in FIG.
るつぼは、表面1r:SiCでコーティングした直径6
インチのカーボンるつぼの中に4インチの石英るつぼを
収納して用いた。内外のベルは石英製とした。The crucible has a surface 1r: diameter 6 coated with SiC.
A 4-inch quartz crucible was housed in a 4-inch carbon crucible. The inner and outer bells were made of quartz.
石英るつほには約t2ゆの0dTe原料をチャージし、
るつぼ外周の環状溝にri200fのBIO3t、受皿
には209のBIO,を、また、外側ベル頚部の環状溝
には5090E、O,をそれぞれチャージした。成長チ
ャンバ内のcd蒸気圧は1.2 atmとし、高圧容器
内の11! ガス圧は6 atmとし念。The quartz rutsuho is charged with about t2 yen of 0dTe raw material,
The annular groove on the outer periphery of the crucible was charged with ri200f BIO3t, the saucer was charged with 209 BIO, and the annular groove on the outer bell neck was charged with 5090E and O. The CD vapor pressure in the growth chamber is 1.2 atm, and the pressure in the high pressure vessel is 11! Make sure the gas pressure is 6 atm.
結晶の引上条件は、引上軸の回転速度を3rpm 、る
つは軸の回転速度を1 Orpmとし、引上速度を3瓢
/Hr とした。The conditions for pulling the crystal were that the rotation speed of the pulling shaft was 3 rpm, the rotation speed of the crystal shaft was 1 Orpm, and the pulling speed was 3 gourds/Hr.
引上げたOd’I’θ単結晶は直径48mで、長さ6c
mであり、二次イオン質量分析法(SIME)でB濃度
を分析したところ、結晶全体に渡って1×101scW
1−3以下であった。The pulled Od'I'θ single crystal has a diameter of 48 m and a length of 6 c.
m, and when the B concentration was analyzed by secondary ion mass spectrometry (SIME), it was found to be 1 × 101 scW over the entire crystal.
It was 1-3 or less.
比較のために、上記特開昭54−123585号公報に
記載の形式の従来装置を用いて上記と同じ引上条件の下
でCdTe結晶を引上げた。For comparison, a CdTe crystal was pulled under the same pulling conditions as above using a conventional apparatus of the type described in JP-A-54-123585.
得られた結晶をS工MSでBIl、9度を分析したとこ
ろ、6 X 10” 〜4 X 10” tv−”であ
った。When the obtained crystal was analyzed by S Engineering MS at BIl at 9 degrees, it was found to be 6 x 10'' to 4 x 10''tv-''.
これらを対比すると、上記実施例のCdTe結晶はB濃
度を大巾に低減することができたことが分かる。Comparing these results, it can be seen that the CdTe crystal of the above example was able to significantly reduce the B concentration.
本発明は、上記構成を採用することにより原料融液中へ
のシール剤の混入を防止することができ、高純度の化合
物結晶を確実に製造することができるようになった。By employing the above configuration, the present invention can prevent the sealant from being mixed into the raw material melt, and can reliably produce high-purity compound crystals.
第1図は本発明の一具体例である結晶引上装置の概念図
である。FIG. 1 is a conceptual diagram of a crystal pulling apparatus which is a specific example of the present invention.
Claims (4)
を組合せた成長チャンバを置き、ベル頂部のシール部を
貫通して設けた引上軸により化合物結晶を引上げるホッ
トウォール法に適した引上装置において、るつぼの周囲
に液体シール剤を収容する環状溝を付設し、ベルを内側
ベルと外側ベルで構成し、2つのベルの間にはほぼ一定
の間隙を設け、2つのベルは上方に引上軸を貫通する頚
部を設け、外側ベルの下端はるつぼ周囲の環状溝中の液
体シール剤に浸漬する位置に置き、外側ベル上方の頚部
には液体シール剤を収容する環状溝を付設し、内側ベル
の下端はるつぼの外周とすり合わせにより気密を保持さ
せ、2つのベルの頚部上方に引上軸を貫通させ、その周
囲に液体シール剤を収容する受皿を設け、この受皿には
外側ベル頚部の環状溝内の液体シール剤に下端を浸漬す
る環状脚部を付設することにより成長チャンバの気密を
保持するようにしたことを特徴とする化合物結晶の引上
装置。(1) Suitable for the hot wall method, in which a growth chamber consisting of a crucible containing a raw material melt and a bell is placed in a high-pressure container, and compound crystals are pulled up using a pulling shaft that penetrates the seal at the top of the bell. In the lifting device, an annular groove for containing a liquid sealant is provided around the crucible, the bell is composed of an inner bell and an outer bell, a substantially constant gap is provided between the two bells, and the two bells are is provided with a neck extending upwardly through the pulling shaft, the lower end of the outer bell is placed in a position to be immersed in the liquid sealant in the annular groove around the crucible, and the neck above the outer bell has an annular groove that accommodates the liquid sealant. The lower end of the inner bell is rubbed against the outer periphery of the crucible to maintain airtightness, a lifting shaft is passed through the upper part of the neck of the two bells, and a saucer for storing liquid sealant is provided around the bell. A compound crystal pulling device characterized in that the growth chamber is kept airtight by attaching an annular leg portion whose lower end is immersed in a liquid sealant in an annular groove of an outer bell neck.
、引上軸シール部の受皿の底と接触させることにより、
成長チャンバ内へのシール剤の混入を防ぐことを特徴と
する特許請求の範囲第1項記載の引上装置。(2) By extending the upper end of the inner bell longer than the upper end of the outer bell and bringing it into contact with the bottom of the saucer of the pulling shaft seal,
The pulling device according to claim 1, characterized in that it prevents a sealant from entering the growth chamber.
を防ぐような間隙を引上軸との間に設けた円筒を、受皿
の引上軸貫通口の下に取り付けたことを特徴とする特許
請求の範囲第1項又は第2項記載の引上装置。(3) A cylinder that allows the lifting shaft to be pulled up and has a gap between it and the lifting shaft that prevents the liquid sealant from flowing down is attached below the lifting shaft through-hole of the saucer. A lifting device according to claim 1 or 2.
壁とすり合せにより気密を保持することを特徴とする特
許請求の範囲第1項又は第2項又は第3項記載の引上装
置。(4) The pulling according to claim 1, 2, or 3, characterized in that an annular convex portion is formed on the middle outer periphery of the crucible, and airtightness is maintained by rubbing against the inner wall of the outer bell. Device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25157487A JPH0196086A (en) | 1987-10-07 | 1987-10-07 | Compound crystal pulling device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25157487A JPH0196086A (en) | 1987-10-07 | 1987-10-07 | Compound crystal pulling device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0196086A true JPH0196086A (en) | 1989-04-14 |
Family
ID=17224840
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP25157487A Pending JPH0196086A (en) | 1987-10-07 | 1987-10-07 | Compound crystal pulling device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0196086A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03120568U (en) * | 1990-03-23 | 1991-12-11 |
-
1987
- 1987-10-07 JP JP25157487A patent/JPH0196086A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03120568U (en) * | 1990-03-23 | 1991-12-11 |
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