JPH02102472U - - Google Patents
Info
- Publication number
- JPH02102472U JPH02102472U JP1056089U JP1056089U JPH02102472U JP H02102472 U JPH02102472 U JP H02102472U JP 1056089 U JP1056089 U JP 1056089U JP 1056089 U JP1056089 U JP 1056089U JP H02102472 U JPH02102472 U JP H02102472U
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- work coil
- growing
- heating
- raw material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000013078 crystal Substances 0.000 claims description 5
- 229910052741 iridium Inorganic materials 0.000 claims description 3
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims description 3
- 239000002994 raw material Substances 0.000 claims 3
- 238000010438 heat treatment Methods 0.000 claims 2
- 239000000155 melt Substances 0.000 claims 2
- 238000002844 melting Methods 0.000 claims 2
- 230000008018 melting Effects 0.000 claims 2
- 239000000498 cooling water Substances 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 claims 1
- 239000002184 metal Substances 0.000 claims 1
- 238000000034 method Methods 0.000 claims 1
- 238000001816 cooling Methods 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Description
第１図は本考案の一実施例を示す単結晶育成装
置を示す正面断図。第２図は従来の育成装置を示
す正面断面図。 １……水冷チヤンバー、２，５，８……保温材
、３……ＺｒＯ２粉末、４……イリジウムるつぼ
、６……（育成された）単結晶、７……融液、９
……イリジウム製ワークコイル、１０……ワーク
コイル冷却用空間、１１……引上げ軸、１２……
ワークコイル、１３……冷却室。
置を示す正面断図。第２図は従来の育成装置を示
す正面断面図。 １……水冷チヤンバー、２，５，８……保温材
、３……ＺｒＯ２粉末、４……イリジウムるつぼ
、６……（育成された）単結晶、７……融液、９
……イリジウム製ワークコイル、１０……ワーク
コイル冷却用空間、１１……引上げ軸、１２……
ワークコイル、１３……冷却室。
Claims (1)
- 高周波電源を用いて金属るつぼを加熱し、融液
原料を作り、該融液原料から単結晶を育成する方
法において、加熱用のワークコイルを高融点材料
であるＩｒ（イリジウム）とし、ワークコイルに
冷却水を流すことなく原料を溶融させ単結晶を育
成することを特徴とする単結晶育成装置。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1056089U JPH02102472U (ja) | 1989-01-30 | 1989-01-30 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1056089U JPH02102472U (ja) | 1989-01-30 | 1989-01-30 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02102472U true JPH02102472U (ja) | 1990-08-15 |
Family
ID=31218331
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1056089U Pending JPH02102472U (ja) | 1989-01-30 | 1989-01-30 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02102472U (ja) |
-
1989
- 1989-01-30 JP JP1056089U patent/JPH02102472U/ja active Pending
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