JPH0194468U - - Google Patents

Info

Publication number
JPH0194468U
JPH0194468U JP1987190866U JP19086687U JPH0194468U JP H0194468 U JPH0194468 U JP H0194468U JP 1987190866 U JP1987190866 U JP 1987190866U JP 19086687 U JP19086687 U JP 19086687U JP H0194468 U JPH0194468 U JP H0194468U
Authority
JP
Japan
Prior art keywords
single crystal
crucible
pulling
cooling cylinder
czyochralski
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1987190866U
Other languages
English (en)
Other versions
JPH0523579Y2 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1987190866U priority Critical patent/JPH0523579Y2/ja
Publication of JPH0194468U publication Critical patent/JPH0194468U/ja
Application granted granted Critical
Publication of JPH0523579Y2 publication Critical patent/JPH0523579Y2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Description

【図面の簡単な説明】
第1図と第2図は本考案の一実施例を示すもの
で、第1図は径の小さい単結晶を引上げる場合の
概略構成図、第2図は径の大きい単結晶を引上げ
る場合の概略構成図、第3図は本考案の他の実施
例を示す概略構成図である。 2…下チヤンバー、2a,3a…上フランジ部
、3…中チヤンバー、4…石英ルツボ、6…シリ
コン融液、9,9′…単結晶、10,11,13
…水冷筒(冷却筒)。

Claims (1)

    【実用新案登録請求の範囲】
  1. チヨクラルスキー法によつてルツボ内の原料融
    液から単結晶を引上げ成長させる単結晶引上装置
    において、上記ルツボを収納したチヤンバーの上
    端面に、上記単結晶を囲んだ状態で冷却する冷却
    筒が着脱自在に垂設されたことを特徴とする単結
    晶引上装置。
JP1987190866U 1987-12-16 1987-12-16 Expired - Lifetime JPH0523579Y2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1987190866U JPH0523579Y2 (ja) 1987-12-16 1987-12-16

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1987190866U JPH0523579Y2 (ja) 1987-12-16 1987-12-16

Publications (2)

Publication Number Publication Date
JPH0194468U true JPH0194468U (ja) 1989-06-21
JPH0523579Y2 JPH0523579Y2 (ja) 1993-06-16

Family

ID=31481805

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1987190866U Expired - Lifetime JPH0523579Y2 (ja) 1987-12-16 1987-12-16

Country Status (1)

Country Link
JP (1) JPH0523579Y2 (ja)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS546511A (en) * 1977-06-17 1979-01-18 Hitachi Ltd Rotary type magnetic head
JPS5645894A (en) * 1979-09-25 1981-04-25 Nippon Telegr & Teleph Corp <Ntt> Reducing method for defect of silicon single crystal
JPS5740119A (en) * 1980-07-18 1982-03-05 Skf Kugellagerfabriken Gmbh Thin bearing bush made by pressdrawing
JPS5750759A (en) * 1980-09-10 1982-03-25 Hitachi Ltd Charged particle irradiator
JPS62138385A (ja) * 1985-12-11 1987-06-22 Shin Etsu Handotai Co Ltd 半導体単結晶の引上装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS546511A (en) * 1977-06-17 1979-01-18 Hitachi Ltd Rotary type magnetic head
JPS5645894A (en) * 1979-09-25 1981-04-25 Nippon Telegr & Teleph Corp <Ntt> Reducing method for defect of silicon single crystal
JPS5740119A (en) * 1980-07-18 1982-03-05 Skf Kugellagerfabriken Gmbh Thin bearing bush made by pressdrawing
JPS5750759A (en) * 1980-09-10 1982-03-25 Hitachi Ltd Charged particle irradiator
JPS62138385A (ja) * 1985-12-11 1987-06-22 Shin Etsu Handotai Co Ltd 半導体単結晶の引上装置

Also Published As

Publication number Publication date
JPH0523579Y2 (ja) 1993-06-16

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