JPH02102728U - - Google Patents
Info
- Publication number
- JPH02102728U JPH02102728U JP1161389U JP1161389U JPH02102728U JP H02102728 U JPH02102728 U JP H02102728U JP 1161389 U JP1161389 U JP 1161389U JP 1161389 U JP1161389 U JP 1161389U JP H02102728 U JPH02102728 U JP H02102728U
- Authority
- JP
- Japan
- Prior art keywords
- phase growth
- vapor phase
- vapor
- raw material
- growth chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000001947 vapour-phase growth Methods 0.000 claims description 12
- 239000002994 raw material Substances 0.000 claims description 5
- 238000005192 partition Methods 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 2
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 claims 1
- 229910052753 mercury Inorganic materials 0.000 claims 1
- 239000012159 carrier gas Substances 0.000 description 2
- 239000007789 gas Substances 0.000 description 1
Description
第１図及び第２図は本考案の実施例を示すもの
で、第１図は本考案を適用した横型気相成長装置
の概略断面図、第２図は同じく縦型気相成長装置
の概略断面図、第３図は従来の横型気相成長装置
の概略断面図である。
３……キヤリアガス供給管、５……原料ガス供
給管、６……基板、７……保持台、１１……横型
気相成長装置、１２，３２……気相成長室、１３
，３３……原料管、１４，３４……仕切り壁、１
５，３７……開閉弁、１６，３１……供給部、１
７，３６……駆動部、１９……キヤリアガス排気
管、３０……縦型気相成長装置。
1 and 2 show embodiments of the present invention. FIG. 1 is a schematic cross-sectional view of a horizontal vapor phase growth apparatus to which the present invention is applied, and FIG. 2 is a schematic cross-sectional view of a vertical vapor growth apparatus. 3 is a schematic cross-sectional view of a conventional horizontal vapor phase growth apparatus. 3... Carrier gas supply pipe, 5... Raw material gas supply pipe, 6... Substrate, 7... Holding stand, 11... Horizontal vapor phase growth apparatus, 12, 32... Vapor phase growth chamber, 13
, 33... Raw material pipe, 14, 34... Partition wall, 1
5, 37... Opening/closing valve, 16, 31... Supply section, 1
7, 36... Drive unit, 19... Carrier gas exhaust pipe, 30... Vertical vapor phase growth apparatus.
Claims (1)
基板に気相成長を行う気相成長装置において、前
記気相成長室に、前記低蒸気圧原料の供給部を連
設するとともに、該供給部と気相成長室との間に
仕切り壁を設け、該仕切り壁に低蒸気圧原料の蒸
気の気相成長室内への供給を制御する開閉弁を設
けたことを特徴とする気相成長装置。 In a vapor phase growth apparatus that performs vapor phase growth on a substrate in a vapor phase growth chamber using a low vapor pressure raw material such as mercury, a supply section for the low vapor pressure raw material is connected to the vapor phase growth chamber, and A vapor phase growth characterized in that a partition wall is provided between the supply section and the vapor phase growth chamber, and an on-off valve is provided on the partition wall to control the supply of the vapor of the low vapor pressure raw material into the vapor phase growth chamber. Device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1161389U JPH02102728U (en) | 1989-02-02 | 1989-02-02 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1161389U JPH02102728U (en) | 1989-02-02 | 1989-02-02 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02102728U true JPH02102728U (en) | 1990-08-15 |
Family
ID=31220322
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1161389U Pending JPH02102728U (en) | 1989-02-02 | 1989-02-02 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02102728U (en) |
-
1989
- 1989-02-02 JP JP1161389U patent/JPH02102728U/ja active Pending