JPS6441128U - - Google Patents
Info
- Publication number
- JPS6441128U JPS6441128U JP13555387U JP13555387U JPS6441128U JP S6441128 U JPS6441128 U JP S6441128U JP 13555387 U JP13555387 U JP 13555387U JP 13555387 U JP13555387 U JP 13555387U JP S6441128 U JPS6441128 U JP S6441128U
- Authority
- JP
- Japan
- Prior art keywords
- pipe
- raw material
- vacuum
- vapor phase
- phase growth
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Description
図面は本考案に係る気相成長装置の一例を示す
系統図である。
１……反応炉、２〜８……原料容器、９〜１５
……原料ガス供給用個別配管、１６……原料ガス
供給用メイン配管、７４……ベント配管、１０６
，１０７，１１０……真空引き専用配管、１０１
，１０３，１０４……真空引きポンプ、１１２〜
１１４，１１８〜１２１……真空引き専用枝管。
The drawing is a system diagram showing an example of a vapor phase growth apparatus according to the present invention. 1... Reactor, 2-8... Raw material container, 9-15
...Individual piping for raw material gas supply, 16...Main piping for raw material gas supply, 74...Vent piping, 106
, 107, 110... Piping dedicated to vacuuming, 101
, 103, 104...Vacuum pump, 112~
114, 118-121...branch pipes exclusively for vacuuming.
Claims (1)
用個別配管及び共通の原料ガス供給用メイン配管
を経て反応炉に原料ガスを送り、前記反応炉内で
ウエハ上に気相成長させる気相成長装置において
、前記各原料容器とそれに対応する前記各個別配
管との接続部に隣接した前記各個別配管に切換バ
ルブを介して共通の真空引き専用配管が接続され
、前記真空引き専用配管は前記メイン配管より太
い配管で形成され、前記真空引き専用配管の末端
には真空引きポンプが接続されていることを特徴
とする気相成長装置。 Vapor phase growth in which raw material gas is sent from various raw material containers for vapor phase growth to a reactor through individual piping for supplying raw material gas and a common main piping for supplying raw material gas, and vapor phase growth is performed on a wafer in the reactor. In the apparatus, a common vacuum dedicated pipe is connected via a switching valve to each of the individual pipes adjacent to the connection portion between each of the raw material containers and the corresponding individual pipes, and the vacuum dedicated pipe is connected to the main vacuum pipe. A vapor phase growth apparatus characterized in that it is formed of a pipe that is thicker than the pipe, and a vacuum pump is connected to the end of the pipe dedicated to vacuum evacuation.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1987135553U JPH0627944Y2 (en) | 1987-09-07 | 1987-09-07 | Vapor phase growth equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1987135553U JPH0627944Y2 (en) | 1987-09-07 | 1987-09-07 | Vapor phase growth equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6441128U true JPS6441128U (en) | 1989-03-13 |
| JPH0627944Y2 JPH0627944Y2 (en) | 1994-07-27 |
Family
ID=31395282
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1987135553U Expired - Lifetime JPH0627944Y2 (en) | 1987-09-07 | 1987-09-07 | Vapor phase growth equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0627944Y2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06244120A (en) * | 1993-02-19 | 1994-09-02 | Sony Corp | Gas feeding equipment in wafer process equipment |
| JPH101776A (en) * | 1996-06-10 | 1998-01-06 | Canon Inc | Gas supply method and supply device for semiconductor manufacturing apparatus |
| JP2018006682A (en) * | 2016-07-07 | 2018-01-11 | 昭和電工株式会社 | GAS PIPING SYSTEM, CHEMICAL VAPOR GROWTH DEVICE, DEPOSITION METHOD AND MANUFACTURING METHOD OF SiC EPITAXIAL WAFER |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5748850A (en) * | 1980-09-08 | 1982-03-20 | Fujitsu Ltd | Carrier reproducing circuit |
-
1987
- 1987-09-07 JP JP1987135553U patent/JPH0627944Y2/en not_active Expired - Lifetime
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5748850A (en) * | 1980-09-08 | 1982-03-20 | Fujitsu Ltd | Carrier reproducing circuit |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06244120A (en) * | 1993-02-19 | 1994-09-02 | Sony Corp | Gas feeding equipment in wafer process equipment |
| JPH101776A (en) * | 1996-06-10 | 1998-01-06 | Canon Inc | Gas supply method and supply device for semiconductor manufacturing apparatus |
| JP2018006682A (en) * | 2016-07-07 | 2018-01-11 | 昭和電工株式会社 | GAS PIPING SYSTEM, CHEMICAL VAPOR GROWTH DEVICE, DEPOSITION METHOD AND MANUFACTURING METHOD OF SiC EPITAXIAL WAFER |
| WO2018008334A1 (en) * | 2016-07-07 | 2018-01-11 | 昭和電工株式会社 | Gas piping system, chemical vapor deposition device, film deposition method, and method for producing sic epitaxial wafer |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0627944Y2 (en) | 1994-07-27 |