JPH02106468U - - Google Patents
Info
- Publication number
- JPH02106468U JPH02106468U JP1553889U JP1553889U JPH02106468U JP H02106468 U JPH02106468 U JP H02106468U JP 1553889 U JP1553889 U JP 1553889U JP 1553889 U JP1553889 U JP 1553889U JP H02106468 U JPH02106468 U JP H02106468U
- Authority
- JP
- Japan
- Prior art keywords
- susceptor
- vapor phase
- phase growth
- protection plate
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 4
- 229910052710 silicon Inorganic materials 0.000 claims 4
- 239000010703 silicon Substances 0.000 claims 4
- 238000001947 vapour-phase growth Methods 0.000 claims 3
- 125000002524 organometallic group Chemical group 0.000 claims 2
- 150000001875 compounds Chemical class 0.000 claims 1
- 239000002184 metal Substances 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 claims 1
- 229920001296 polysiloxane Polymers 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Description
第１図ａ，ａ′は本考案のサセプターの具体例
の正面断面図、平面図であり、第１図ｂ，ｃは他
の具体例の正面断面図である。第２図は従来のサ
セプターの正面断面図である。
１：シリコン製保護板、２：サセプター、３：
基板、ウエハ、４：嵌め込み部。
1A and 1A' are a front sectional view and a plan view of a specific example of the susceptor of the present invention, and FIGS. 1B and 1C are front sectional views of another specific example. FIG. 2 is a front sectional view of a conventional susceptor. 1: Silicone protection plate, 2: Susceptor, 3:
Substrate, wafer, 4: Fitting part.
補正 平１．５．１
図面の簡単な説明を次のように補正する。
明細書８頁７行目、「第１図ａ，ａ′は本考案
の具体例の正面断面図、平面図であり、第１図ｂ
は……」とあるのを「第１図ａは本考案の具体例
の正面断面図、第１図ｄはその平面図である。第
１図ｂは……」と補正する。Amendment 1.5.1 The brief description of the drawing is amended as follows. Page 8 of the specification, line 7, ``Figures 1a and a' are a front sectional view and a plan view of a specific example of the present invention, and Figure 1b is a
1 is a front sectional view of a specific example of the present invention, and FIG. 1 d is a plan view thereof. FIG. 1 b is a sectional view of a specific example of the invention.
Claims (1)
において、通常のサセプターに該サセプターの上
面に置いたシリコン製保護板を組み合わせたこと
を特徴とする有機金属気相成長用サセプター。 ２ シリコン基板に化合物半導体をエピタキシヤ
ル成長させる有機金属気相成長装置に使用するサ
セプターにおいて、エピタキシヤル成長させるシ
リコン基板の周辺にダミー用のシリコン製保護板
を配置したことを特徴とする請求項１記載の有機
金属気相成長用サセプター。[Claims for Utility Model Registration] 1. A susceptor for use in an organometallic vapor phase growth apparatus, characterized in that a normal susceptor is combined with a silicon protection plate placed on the top surface of the susceptor. Susceptor. 2. Claim 1, characterized in that, in a susceptor used in a metal organic vapor phase growth apparatus for epitaxially growing a compound semiconductor on a silicon substrate, a dummy silicon protection plate is arranged around the silicon substrate to be epitaxially grown. The described susceptor for organometallic vapor phase growth.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1553889U JPH02106468U (en) | 1989-02-13 | 1989-02-13 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1553889U JPH02106468U (en) | 1989-02-13 | 1989-02-13 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02106468U true JPH02106468U (en) | 1990-08-23 |
Family
ID=31227676
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1553889U Pending JPH02106468U (en) | 1989-02-13 | 1989-02-13 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02106468U (en) |
-
1989
- 1989-02-13 JP JP1553889U patent/JPH02106468U/ja active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| GB8708926D0 (en) | Bipolar transistor | |
| EP0993048A3 (en) | Nitride semiconductor device and its manufacturing method | |
| CA2107174A1 (en) | Epitaxial Magnesium Oxide as a Buffer Layer on (111) Tetrahedral Semiconductors | |
| EP0276961A3 (en) | Solar battery and process for preparing same | |
| JPH02106468U (en) | ||
| JPS6265831U (en) | ||
| JPS61144633U (en) | ||
| JPH01116442U (en) | ||
| JPS61166528U (en) | ||
| JPS62182541U (en) | ||
| JPS62184732U (en) | ||
| JPH03117832U (en) | ||
| JPH0468519U (en) | ||
| JPS63149973U (en) | ||
| JPH03106731U (en) | ||
| JPS6268254U (en) | ||
| JPS6387833U (en) | ||
| JPS5818356U (en) | shotki diode | |
| JPH0165871U (en) | ||
| JPH01149467U (en) | ||
| JPS6311575U (en) | ||
| JPS6134753U (en) | semiconductor equipment | |
| JPH0446542U (en) | ||
| JPS62166638U (en) | ||
| JPH0180962U (en) |