JPH0468519U - - Google Patents

Info

Publication number
JPH0468519U
JPH0468519U JP11169990U JP11169990U JPH0468519U JP H0468519 U JPH0468519 U JP H0468519U JP 11169990 U JP11169990 U JP 11169990U JP 11169990 U JP11169990 U JP 11169990U JP H0468519 U JPH0468519 U JP H0468519U
Authority
JP
Japan
Prior art keywords
kesepter
gas inlet
close
utility
scope
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11169990U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP11169990U priority Critical patent/JPH0468519U/ja
Publication of JPH0468519U publication Critical patent/JPH0468519U/ja
Pending legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)

Description

【図面の簡単な説明】[Brief explanation of drawings]

第1図はこの考案の一実施例であるMOCVD
装置の反応系の構成を示す断面図、第2図は従来
のMOCVD装置の反応系の構成を示す断面図で
ある。 図において、1は石英反応管、2はウエハサセ
プタ、3はGaAs基板、4はRFコイル、5は
ガス導入口、6はウエハサセプタの回転軸、7は
分散器、8は分散器の回転軸を示す。なお、図中
、同一符号は同一、又は相当部分を示す。
Figure 1 shows an example of MOCVD of this invention.
FIG. 2 is a sectional view showing the configuration of a reaction system of a conventional MOCVD apparatus. In the figure, 1 is a quartz reaction tube, 2 is a wafer susceptor, 3 is a GaAs substrate, 4 is an RF coil, 5 is a gas inlet, 6 is a rotation axis of the wafer susceptor, 7 is a distributor, and 8 is a rotation axis of the distributor. shows. In addition, in the figures, the same reference numerals indicate the same or equivalent parts.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] ケセプタと同軸上でガスの導入口に近い部分に
ガスの分散器を設けたことを特徴とする半導体結
晶成長装置。
A semiconductor crystal growth apparatus characterized in that a gas distributor is provided coaxially with a kesepter and close to a gas inlet.
JP11169990U 1990-10-24 1990-10-24 Pending JPH0468519U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11169990U JPH0468519U (en) 1990-10-24 1990-10-24

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11169990U JPH0468519U (en) 1990-10-24 1990-10-24

Publications (1)

Publication Number Publication Date
JPH0468519U true JPH0468519U (en) 1992-06-17

Family

ID=31859168

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11169990U Pending JPH0468519U (en) 1990-10-24 1990-10-24

Country Status (1)

Country Link
JP (1) JPH0468519U (en)

Similar Documents

Publication Publication Date Title
JPH0468519U (en)
JPH03117832U (en)
JPH0224533U (en)
JPS62142839U (en)
JPS6265831U (en)
JPH0353834U (en)
JPH01114680U (en)
JPS63137933U (en)
JPH0321845U (en)
JPS62201927U (en)
JPH0229521U (en)
JPH0320434U (en)
JPS60185331U (en) Vapor phase growth equipment
JPS62170627U (en)
JPS61180168U (en)
JPS63153537U (en)
JPH0289823U (en)
JPS6329929U (en)
JPH01107124U (en)
JPH0272546U (en)
JPS6219731U (en)
JPH01149474U (en)
JPH02101529U (en)
JPS62180933U (en)
JPS58168575U (en) Metal-organic vapor phase epitaxy equipment