JPH02109401A - Absorbing structure of undesired mode for microwave integrated circuit - Google Patents

Absorbing structure of undesired mode for microwave integrated circuit

Info

Publication number
JPH02109401A
JPH02109401A JP26318288A JP26318288A JPH02109401A JP H02109401 A JPH02109401 A JP H02109401A JP 26318288 A JP26318288 A JP 26318288A JP 26318288 A JP26318288 A JP 26318288A JP H02109401 A JPH02109401 A JP H02109401A
Authority
JP
Japan
Prior art keywords
film
integrated circuit
microwave integrated
deposited
vapor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP26318288A
Other languages
Japanese (ja)
Inventor
Asao Ito
朝男 伊藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP26318288A priority Critical patent/JPH02109401A/en
Publication of JPH02109401A publication Critical patent/JPH02109401A/en
Pending legal-status Critical Current

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Abstract

PURPOSE:To improve the degassing performance and the vibration proof performance by vapor-depositing a resistance film to at least one face of a dielectric substrate and welding an element whose resistance film part is vapor-deposited with a conductive film overlappingly to a groove provided to the inside of a cover of a case. CONSTITUTION:An absorbing resistance film 2 is vapor-deposited on at least one face of a dielectric substrate 1 and an element 10 whose part of film 2 is vapor-deposited with a conductor film 3 overlappingly is formed. Then the element 10 is soldered to a groove 6 provided to the inside of a cover 5 of a case 4 to solve a problem of vibration proof against the vibration of launching of a rocket. Since the film 2 is welded to a circuit board 1 with gold, tin or solder and no organic material such as an adhesives is not required, the problem of degassing is solved. Then if a slight microwave is leaked in space in the case 4 from a microwave integrated circuit 7, an undesired mode is stimulated, but the undesired mode wave is absorbed by the film 2. Thus, the degassing performance and vibration proof performance are improved.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は誘電体基板の面上にマイクロ波回路を設けたマ
イクロ波集積回路に係り、特にマイクロ波集積回路を収
容する筐体の不要モードの吸収構造に関する。
[Detailed Description of the Invention] [Field of Industrial Application] The present invention relates to a microwave integrated circuit in which a microwave circuit is provided on the surface of a dielectric substrate. Regarding the absorption structure of

3、発明の詳細な説明 〔概要〕 マイクロ波集積回路の不要モードの吸収構造に関し、 吸収構造の構成部材から発生するガスの量が規定値に対
して十分に少なくすることと該吸収構造〔従来の技術〕 誘電体基板の面上にマイクロ波回路を設けたマイクロ波
集積回路(例えば増幅回路)を筐体に収容実装する場合
に、筐体の構造に依存する不要モードが発生し、そのた
め予期しない共振や帰還が起きることがある。これらを
防止する為に、不要モードを吸収するための特別の構造
が必要となる。
3. Detailed Description of the Invention [Summary] Regarding an absorption structure for unnecessary modes of a microwave integrated circuit, the present invention relates to an absorption structure for unnecessary modes in a microwave integrated circuit, and to reduce the amount of gas generated from the constituent members of the absorption structure to a sufficiently small value compared to a specified value, [Technology] When a microwave integrated circuit (e.g. an amplifier circuit) with a microwave circuit provided on the surface of a dielectric substrate is housed and mounted in a housing, an unnecessary mode depending on the structure of the housing occurs, and as a result, unexpected Resonance or feedback that does not occur may occur. In order to prevent these, a special structure is required to absorb unnecessary modes.

従来のマイクロ波集積回路の不要モードの吸収構造は、
第4図の構造図に示す如く、不要モードを吸収するため
に、筺体4のフタ5の内側に例えばゴムフェライトの如
き電波吸収体8を接着剤や両面粘着テープ9で固定する
構造をとっていた。
The absorption structure of unnecessary modes in conventional microwave integrated circuits is
As shown in the structural diagram of FIG. 4, in order to absorb unnecessary modes, a radio wave absorber 8 such as rubber ferrite is fixed to the inside of the lid 5 of the housing 4 with adhesive or double-sided adhesive tape 9. Ta.

C発明が解決しようとする課題〕 しかしながら、上記のマイクロ波集積回路を宇宙環境で
使用する場合には、回路素材が発生するガスの量を制限
する脱ガス性の要求規格を満足するものである事が必要
となり、また、搭載ロケットの打上げ時の振動にも耐え
られる耐振構造でなければならないが、従来例は上述の
如く、接着剤や粘着剤を使用しているので必ずしもこれ
らの要求規格を満足していないという問題があった。
Problem to be solved by the invention C] However, when the above-mentioned microwave integrated circuit is used in a space environment, the circuit material must satisfy the required standards for degassing, which limits the amount of gas generated. In addition, it must have a vibration-resistant structure that can withstand vibrations during the launch of the rocket it is mounted on, but as mentioned above, conventional examples use adhesives and adhesives, so it is not necessarily possible to meet these required standards. The problem was that I was not satisfied.

本発明はマイクロ波集積回路の脱ガス性と耐振性の問題
を解決することをその課題とする。
An object of the present invention is to solve the problems of degassing and vibration resistance of microwave integrated circuits.

〔課題を解決するための手段〕[Means to solve the problem]

この課題は、第1図に示す如く、誘電体基板lの少なく
とも一方の面上に抵抗膜2を蒸着し更にその抵抗膜の一
部分に導体膜3を重ねて蒸着した素子10を筺体4のフ
タ5の内側に設けた溝6に金スズまたは半田により溶着
する本発明の構造によって解決される。
This problem is solved by attaching an element 10, in which a resistive film 2 is deposited on at least one surface of a dielectric substrate l, and a conductive film 3 is deposited over a portion of the resistive film, to a lid of a housing 4, as shown in FIG. This problem is solved by the structure of the present invention in which gold-tin or solder is welded to the groove 6 provided inside the groove 5.

本発明のマイクロ波集積回路の不要モードの吸収構造を
示す第1図の原理図において、■は、フタ5を具えた筺
体4内の誘電体!+7iである。
In the principle diagram of FIG. 1 showing the unnecessary mode absorption structure of the microwave integrated circuit of the present invention, ■ is the dielectric inside the casing 4 equipped with the lid 5! +7i.

2は、誘電体基板1の少なくとも一方の面上に蒸着した
不要モードの吸収用の抵抗膜である。
Reference numeral 2 denotes a resistive film for absorbing unwanted modes, which is deposited on at least one surface of the dielectric substrate 1.

3は、抵抗膜2の一部分に重ねて蒸着した導体膜であっ
て素子10を形成する。
Reference numeral 3 denotes a conductive film deposited over a portion of the resistive film 2 to form the element 10.

4は、マイクロ波集積回路を収容する筐体である。4 is a housing that houses the microwave integrated circuit.

5は、筐体4のフタである。5 is a lid of the housing 4.

6は、筐体4のフタ5の内側に設けた溝である。6 is a groove provided inside the lid 5 of the housing 4.

10は、抵抗膜2の一部分に導体II!3を重ねて蒸着
した素子である。
10 is a conductor II! in a part of the resistive film 2! This is an element in which 3 layers are deposited one on top of the other.

そして素子10を筺体4のフタ5の内側に設けたff6
に金スズまたは半田により溶着するように構成する。
And an ff6 in which the element 10 is provided inside the lid 5 of the housing 4
The structure is such that it is welded to the surface using gold-tin or solder.

〔作用〕[Effect]

本発明のマイクロ波集積回路の不要モードの吸収構造は
、吸収用の抵抗膜2を誘電体基板1の少なくとも一方の
面上に真空蒸着し、更に吸収用の抵抗膜2の一部分に4
体膜3を重ねて蒸着した素子10を形成し、該素子10
を筐体4のフタ5の内側に設けた溝6に半田付けなどで
溶着するので、搭載ロケットの打上げ時の振動に対する
耐振性の問題は無くなる。また、吸収用の抵抗膜2を回
路基板1へ固定するのに、金スズまたは半田により溶着
して接着剤などの有機材料を使用しなくて済むので、ガ
ス発生は無(なり脱ガス性の問題が解決される。
The unnecessary mode absorption structure of the microwave integrated circuit of the present invention is constructed by vacuum-depositing an absorbing resistive film 2 on at least one surface of a dielectric substrate 1, and furthermore, a portion of the absorbing resistive film 2 is
An element 10 is formed by depositing body films 3 overlappingly, and the element 10 is
Since it is welded by soldering or the like to the groove 6 provided inside the lid 5 of the casing 4, there is no problem with vibration resistance against the vibrations during the launch of the mounted rocket. In addition, in order to fix the absorbing resistive film 2 to the circuit board 1, it is welded with gold-tin or solder, and there is no need to use organic materials such as adhesives. problem is resolved.

〔実施例〕〔Example〕

第2図は本発明の第1の実施例のマイクロ波集積回路の
不要モードの吸収構造を示す構造図であり、第3図は本
発明の第2の実施例の構造図である。
FIG. 2 is a structural diagram showing an unnecessary mode absorption structure of a microwave integrated circuit according to a first embodiment of the present invention, and FIG. 3 is a structural diagram of a second embodiment of the present invention.

第2図において、誘電体基Fi、iは例えばアルミナで
構成され、その少なくとも一方の面上に抵抗膜2を真空
蒸着技術で形成する。
In FIG. 2, the dielectric base Fi,i is made of, for example, alumina, and a resistive film 2 is formed on at least one surface thereof by vacuum evaporation technology.

抵抗膜2は例えば窒化タンタルTatNで構成され、更
にその抵抗膜2の一部分に導体膜3を重ねて蒸着し素子
10を形成する。
The resistive film 2 is made of tantalum nitride TatN, for example, and a conductive film 3 is further deposited over a portion of the resistive film 2 to form the element 10.

導体11!3は例えばニッケルクロウムNiCrと金A
uで構成され、抵抗11!2の一部分に重ねて蒸着され
素子10を形成し、その素子10がマイクロ波集積回路
7を収容する筺体4のフタ5の内側に設けられた溝6に
金スズ、または、半田で溶着し固定される。
The conductor 11!3 is made of nickel chromium NiCr and gold A, for example.
gold-tin is deposited over a part of the resistor 11!2 to form an element 10, and the groove 6 provided inside the lid 5 of the housing 4 in which the element 10 houses the microwave integrated circuit 7 is coated with gold and tin. , or welded and fixed with solder.

マイクロ波集積回路7からは僅かのマイクロ波が筺体4
内の空間に漏れ出して不要モードを誘起するが、この不
要モードは素子10の抵抗膜2によって吸収される。
A small amount of microwave is transmitted from the microwave integrated circuit 7 to the housing 4.
This leaks into the internal space and induces an unnecessary mode, but this unnecessary mode is absorbed by the resistive film 2 of the element 10.

従って第2図の実施例のマイクロ波集積回路の不要モー
ドの吸収構造は、吸収用の抵抗膜2の窒化タンタルTa
2N膜を、誘電体基板1のアルミナ板の少なくとも一方
の面上に真空蒸着し、更にその吸収用の抵抗膜2の一部
分に、導体膜3のニッケルクロウムNiCrと金Auの
導体膜を重ねて蒸着して素子10を形成し、該素子10
を筐体4のフタ5の内側に設けた溝6に半田付けなど溶
着するので、搭載ロケ・ノドの打上げ時の振動に対する
耐振性の問題は無い。
Therefore, the unnecessary mode absorption structure of the microwave integrated circuit of the embodiment shown in FIG.
A 2N film is vacuum deposited on at least one surface of the alumina plate of the dielectric substrate 1, and a conductor film of nickel chromium NiCr and gold Au as the conductor film 3 is superimposed on a part of the resistive film 2 for absorption. The element 10 is formed by vapor-depositing the element 10.
Since it is soldered or otherwise welded to the groove 6 provided inside the lid 5 of the casing 4, there is no problem with the vibration resistance against the vibration of the loading location/node during launch.

また、吸収用の抵抗膜2の窒化タンタルTa、N膜を回
路基板1へ固定するのに金スズまたは半田により溶着し
て接着剤などの有機材料を使用しないので、ガス発生は
無く脱ガス性の問題が無くて不要モードを吸収し寄生共
振や予期しない帰還を防止することが出来て問題が無い
In addition, since the tantalum nitride Ta and N films of the absorbing resistive film 2 are fixed to the circuit board 1 by welding with gold tin or solder and no organic materials such as adhesives are used, there is no gas generation and degassing properties. There is no problem because it absorbs unnecessary modes and prevents parasitic resonance and unexpected feedback.

第3図の第2の実施例は、誘電体基板11の少なくとも
一方の面上に、導体膜I3および4体Mi+4を間隔1
5を開けて形成し、先ず導体膜13の側をフタ5の内側
に設けた溝6に金スズで固定した後に、4体膜13およ
び導体膜14をチップ抵抗12を半田付けし橋渡して導
体20を形成する場合である。この実施例の組立手順は
半田の溶融温度が金スズの溶融温度より低いことを考慮
したものである。
In the second embodiment shown in FIG.
First, the conductor film 13 side is fixed to the groove 6 provided inside the lid 5 with gold tin, and then the four-layer film 13 and the conductor film 14 are bridged by soldering the chip resistor 12 to form the conductor. 20 is formed. The assembly procedure of this embodiment takes into consideration that the melting temperature of solder is lower than that of gold tin.

〔発明の効果〕〔Effect of the invention〕

以上説明した如く、本発明によれば、不要モードを吸収
する効果は従来例と同等であるが接着剤や粘着剤などの
有機材料を使用しないので脱ガス性を向上する効果があ
り、また、素子を固定する方法として溝を設けてその溝
に金スズまたは半田付けなど溶着するので耐振性を向上
する効果が得られる。
As explained above, according to the present invention, the effect of absorbing unnecessary modes is the same as that of the conventional example, but since organic materials such as adhesives and adhesives are not used, there is an effect of improving degassing performance, and As a method of fixing the element, a groove is provided and gold-tin or solder is welded to the groove, so that the effect of improving vibration resistance can be obtained.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明のマイクロ波集積回路の不要モードの吸
収構造を示す原理図、 第2図は本発明の第1の実施例のマイクロ波集積回路の
不要モードの吸収構造を示す構造図、第3図は本発明の
第2の実施例のマイクロ波集積回路の不要モードの吸収
構造を示す構造図、第4図は従来のマイクロ波集積回路
の不要モードの吸収構造の構造図である。 図において、 1は誘電体基板、2は抵抗膜、3は導体膜、4は筐体、
5はフタ、6は溝、7はマイクロ波集積回路、10は素
子である。 6基 \ 木老萌/+ 74’)rJ慨集積回路の手竿七−1めロ
叉喉ノ露直r構成乏1、す原理図 第  1  図 75、全り月/l昇1n実詰辷イ列力フイ205攻集オ
會回話の秀や毛−Fすq又囁改ル溝へ2テ、す構造図 第 図 134俸庫 不しそ9月辺第2刀′実方社舎・10マイ20オ1隼積
回湿引力子ギLし一戸nロ及’xKf4−#(n イI
Ll、”2 方丈T 禾咋七1ガj第 図
FIG. 1 is a principle diagram showing the unnecessary mode absorption structure of the microwave integrated circuit of the present invention, FIG. 2 is a structural diagram showing the unnecessary mode absorption structure of the microwave integrated circuit of the first embodiment of the present invention, FIG. 3 is a structural diagram showing an unnecessary mode absorption structure of a microwave integrated circuit according to a second embodiment of the present invention, and FIG. 4 is a structural diagram of an unnecessary mode absorption structure of a conventional microwave integrated circuit. In the figure, 1 is a dielectric substrate, 2 is a resistive film, 3 is a conductive film, 4 is a housing,
5 is a lid, 6 is a groove, 7 is a microwave integrated circuit, and 10 is an element. 6 units \ Kiro Moe / + 74') r J integrated circuit hand rod 7-1 Me ro throat dew straight r configuration poor 1, principle diagram 1 Figure 75, full moon / l rise 1n fruit filling Structural diagram Figure 134 Salary warehouse No. 2 sword on the September side 'Jitsukata shrine building'・10 my 20 o 1 Hayabusa accumulation times wet attraction force
Ll,”2 Hojo T Hekui 71 Gaj fig.

Claims (1)

【特許請求の範囲】[Claims] フタ(5)を具備した筐体(4)内にマイクロ波集積回
路(7)を収容する実装構造において、誘電体基板(1
)の少なくとも一方の面に抵抗膜(2)を蒸着し更に該
抵抗膜(2)の一部分の上に導体膜(3)を重ねて蒸着
した素子(10)を該筐体(4)のフタ(5)の内側に
設けた溝(6)に溶着したことを特徴としたマイクロ波
集積回路の不要モードの吸収構造。
In a mounting structure in which a microwave integrated circuit (7) is housed in a casing (4) equipped with a lid (5), a dielectric substrate (1) is provided.
), a resistive film (2) is deposited on at least one surface of the casing (4), and a conductive film (3) is deposited on a portion of the resistive film (2). (5) An unnecessary mode absorption structure for a microwave integrated circuit, characterized by being welded to a groove (6) provided inside.
JP26318288A 1988-10-19 1988-10-19 Absorbing structure of undesired mode for microwave integrated circuit Pending JPH02109401A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP26318288A JPH02109401A (en) 1988-10-19 1988-10-19 Absorbing structure of undesired mode for microwave integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP26318288A JPH02109401A (en) 1988-10-19 1988-10-19 Absorbing structure of undesired mode for microwave integrated circuit

Publications (1)

Publication Number Publication Date
JPH02109401A true JPH02109401A (en) 1990-04-23

Family

ID=17385908

Family Applications (1)

Application Number Title Priority Date Filing Date
JP26318288A Pending JPH02109401A (en) 1988-10-19 1988-10-19 Absorbing structure of undesired mode for microwave integrated circuit

Country Status (1)

Country Link
JP (1) JPH02109401A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0863551A3 (en) * 1997-03-06 1999-08-04 Alcatel Housing for microoptical and/or microelectronic devices

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61177751A (en) * 1985-01-31 1986-08-09 Fujitsu Ltd Microwave amplifier
JPS6437481A (en) * 1987-08-04 1989-02-08 Nippon Steel Corp Metallizing of ceramic by high-melting alloy

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61177751A (en) * 1985-01-31 1986-08-09 Fujitsu Ltd Microwave amplifier
JPS6437481A (en) * 1987-08-04 1989-02-08 Nippon Steel Corp Metallizing of ceramic by high-melting alloy

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0863551A3 (en) * 1997-03-06 1999-08-04 Alcatel Housing for microoptical and/or microelectronic devices

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